Data Sheet

Freescale Semiconductor
Advance Information
Document Number: MC33663
Rev. 2.0, 12/2013
LIN 2.1 / SAEJ2602-2 Dual LIN
Physical Layer
33663
The local interconnect network (LIN) is a serial communication
protocol designed to support automotive networks in conjunction with
controller area network (CAN). As the lowest level of a hierarchical
network, LIN enables cost-effective communication with sensors and
actuators when all the features of CAN are not required.
The 33663 product line integrates two physical layer LIN bus
dedicated to automotive LIN sub-bus applications. The MC33663LEF
and MC33663SEF devices offer normal baud rate (20 kbps) and the
MC33663JEF slow baud rate (10 kbps). Both devices integrate fast
baud rate (above 100 kbps) for test and programming modes. They
present excellent electromagnetic compatibility (EMC) and radiated
emission performance, electrostatic discharge (ESD) robustness and
safe behavior, in the event of LIN bus short-to-ground or LIN bus
leakage during low-power mode.
DUAL LIN TRANSCEIVER
EF SUFFIX (PB-FREE)
98ASB42565B
14-PIN SOICN
Features
ORDERING INFORMATION
• Operational from VSUP 7.0 to 18 V DC, functional up to 27 V DC,
Device
Temperature
and handles 40 V during load dump
(add an R2 suffix for
Package
Range (TA)
• Compatible with LIN protocol specification 2.1, and SAEJ2602-2
Tape and reel orders)
• Very high immunity against electromagnetic interference
MC33663ALEF
• Low standby current in Sleep mode
MC33663AJEF
- 40 to 125°C
14 SOICN
• Over-temperature protection
• Permanent dominant state detection
MC33663ASEF
• Fast baud rate mode selection reported by RXD
• Active bus waveshaping offering excellent radiated emission
performance
• Sustains ±15.0 kV ESD IEC6100-4-2 on LIN BUS and VSUP pins
• 5.0 and 3.3 V compatible digital inputs without any external components required
VBAT
33663
VSUP
Regulator
MCU
VDD
12 V
5.0 or
3.3 V
EN1
RXD1
TXD1
EN2
RXD2
TXD2
WAKE1
WAKE2
INH1
INH2
1.0 k
1.0 k
LIN1
GND LIN2
Figure 1. 33663 Simplified Application Diagram
* This document contains certain information on a new product.
Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2013. All rights reserved.
LIN Interface 1
LIN Interface 2
DEVICE VARIATIONS
DEVICE VARIATIONS
Table 1. Device Variations
Freescale Part No.
(Add an R2 suffix for
Tape and reel orders)
Maximum Baud Rate
MC33663ALEF
20 kbps
MC33663ASEF
20 kbps with restricted limits for transmitter
and receiver symmetry
MC33663AJEF
10 kbps
Temperature Range (TA)
Package
- 40 to 125 °C
14 SOICN
33663
2
Analog Integrated Circuit Device Data
Freescale Semiconductor
INTERNAL BLOCK DIAGRAM
INTERNAL BLOCK DIAGRAM
VSUP
INH_ON
X1
EN1
Control
Unit
200 k
RxD1
( LIN Module 1)
EN_RxD
INH1
EN_SLEEP
30 k
RxD_INTReceiver
725 k
LIN1
LIN_EN
35µA
TxD_INT
TxD1
Slope
Control
WAKE1
INH_ON
X1
EN2
Control
Unit
200 k
INH2
EN_SLEEP
(LIN Module 2)
RxD2
30 k
RxD_INTReceiver
EN_RxD
LIN2
LIN_EN
35µA
TxD_INT
TxD2
725 k
Slope
Control
WAKE2
GND
Figure 2. 33663 Simplified Internal Block Diagram
33663
Analog Integrated Circuit Device Data
Freescale Semiconductor
3
PIN CONNECTIONS
PIN CONNECTIONS
WAKE1
1
14
EN1
TXD1
2
13
RXD1
LIN1
3
12
INH1
LIN2
4
11
VSUP
INH2
5
10
TXD2
RXD2
6
9
GND
EN2
7
8
WAKE2
Figure 3. 33663 14-SOIC Pin Connections
Table 2. 33663 Pin Definitions
Pin
Pin Name
Formal Name
Definition
1
WAKE1
Wake Input
This pin is a high-voltage input used to wake-up the LIN1 from Sleep mode.
2
TXD1
Data Input
This pin is the transmitter input of the LIN1 interface which controls the state of the bus
output.
3
LIN1
LIN Bus
This bidirectional pin represents the LIN1 single-wire bus transmitter and receiver.
4
LIN2
LIN Bus
This bidirectional pin represents the LIN2 single-wire bus transmitter and receiver.
5
INH2
Inhibit Output
This pin can have two main functions: controlling an external switchable voltage
regulator having an inhibit input, or driving an external bus resistor connected to LIN2 in
the master node application.
6
RXD2
Data Output
This pin is the receiver output of the LIN2 interface, which reports the state of the bus
voltage to the MCU interface.
7
EN2
Enable Control
8
WAKE2
Wake Input
9
GND
Ground
10
TXD2
Data Input
11
VSUP
Power Supply
This pin is device battery level power supply.
12
INH1
Inhibit Output
This pin can have two main functions: controlling an external switchable voltage
regulator having an inhibit input, or driving an external bus resistor connected to LIN1 in
the master node application.
13
RXD1
Data Output
This pin is the receiver output of the LIN1 interface, which reports the state of the bus
voltage to the MCU interface.
14
EN1
Enable Control
This pin controls the operation mode of the LIN2 interface.
This pin is a high-voltage input used to wake-up the LIN2 device from Sleep mode.
This pin is the device ground pin.
This pin is the transmitter input of the LIN2 interface, which controls the state of the bus
output.
This pin controls the operation mode of the LIN1 interface.
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Analog Integrated Circuit Device Data
Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 3. Maximum Ratings
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or
permanent damage to the device.
Ratings
Symbol
Value
VSUP(SS)
-0.3 to 27
VSUP(S1)
-100
Unit
ELECTRICAL RATINGS
Power Supply Voltage (VSUP)
V
Normal Operation (DC)
Transient input voltage with external component (according to ISO7637-2 &
ISO7637-3 & “Hardware Requirements for LIN, CAN, and Flexray Interfaces
in Automotive Applications” specification Rev. 1.1/December 2nd, 2009) (See
Table 4 and Figure 4)
- Pulse 1 (test up to the limit for Damage - Class A(1))
- Pulse 2a (test up to the limit for Damage - Class A(1))
- Pulse 3a (test up to the limit for Damage - Class A(1))
- Pulse 3b (test up to the limit for Damage - Class A(1))
- Pulse 5b (Class A)
(1)
Logic Voltage (RXD1,2, TXD1,2, EN1,2 Pins)
VSUP(S2A)
VSUP(S3A)
VSUP(S3B)
+75
-150
+100
VSUP(S5B)
-0.3 to 40
VLOG
- 0.3 to 5.5
WAKE (VWAKE1,VWAKE2)
V
V
Normal Operation with in series 2*18 k resistor (DC)
VWAKE(SS)
-27 to 40
VWAKE(S1)
-100
Transient input voltage with external component (according to ISO7637-2 &
ISO7637-3 & “Hardware Requirements for LIN, CAN and Flexray Interfaces
in Automotive Applications” specification Rev1.1 / December 2nd, 2009) (See
Table 4 and Figure 5)
- Pulse 1 (test up to the limit for Damage - Class D(2))
- Pulse 2a (test up to the limit for Damage - Class
D(2))
VWAKE(S2A)
+75
- Pulse 3a (test up to the limit for Damage - Class
D(2))
VWAKE(S3A)
-150
- Pulse 3b (test up to the limit for Damage - Class D(2))
VWAKE(S3B)
+100
LIN Bus Voltage (VLIN1, VLIN2)
V
Normal Operation (DC)
VLIN(SS)
-27 to 40
- Pulse 1 (test up to the limit for Damage - Class D(2))
VLIN(S1)
-100
- Pulse 2a (test up to the limit for Damage - Class D(2))
VLIN(S2A)
+75
- Pulse 3a (test up to the limit for Damage - Class D )
VLIN(S3A)
-150
- Pulse 3b (test up to the limit for Damage - Class D(2))
VLIN(S3B)
+100
Transient (Coupled Through 1.0 nF Capacitor) (according to ISO7637-2 &
ISO7637-3) (See Table 4 and Figure 6)
(2)
Notes
1. Class A: All functions of a device/system perform as designed during and after exposure to disturbance.
2. Class D: At least one function of the Transceiver stops working properly during the test and will return into proper operation automatically
when the exposure to the disturbance has ended. No physical damage of the IC occurs.
33663
Analog Integrated Circuit Device Data
Freescale Semiconductor
5
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 3. Maximum Ratings
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or
permanent damage to the device.
Ratings
Symbol
Value
Unit
ELECTRICAL RATINGS
INH Voltage / Current (VINH1, VINH2)
DC Voltage
V
VINH
- 0.3 to VSUP + 0.3
VINH(S1)
-100
Transient (Coupled Through 1.0 nF Capacitor, according to ISO7637-2 &
ISO7637-3 & “Hardware Requirements for LIN, CAN and Flexray Interfaces
in Automotive Applications” specification Rev1.1 / December 2nd, 2009) (See
Table 4 and Figure 7)
- Pulse 1 (test up to the limit for Damage - Class D(3))
- Pulse 2a (test up to the limit for Damage - Class D(3))
VINH(S2a)
+75
- Pulse 3a (test up to the limit for Damage - Class D(3))
VINH(S3a)
-150
- Pulse 3b (test up to the limit for Damage - Class D(3))
VINH(S3b)
+100
Notes
3. Class D: At least one function of the Transceiver stops working properly during the test and will return into proper operation automatically
when the exposure to the disturbance has ended. No physical damage of the IC occurs.
33663
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Analog Integrated Circuit Device Data
Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 3. Maximum Ratings
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or
permanent damage to the device.
Ratings
Symbol
Value
Unit
ELECTRICAL RATINGS
ESD Capability
V
AECQ100
Human Body Model - JESD22/A114 (CZAP = 100 pF, RZAP = 1500 )
LIN1, LIN2 pins versus GND
VESD1-1
± 10.0 k
WAKE1, WAKE2 pins versus GND
VESD1-2
± 8.0 k
All other Pins
VESD1-4
± 4.0 k
Corner pins (Pins 1, 7, 8 and 14)
VESD2-1
± 750
All other pins (Pins 2-6, 9-13)
VESD2-2
± 750
VESD3-1
± 200
LIN1, LIN2 pins without capacitor
VESD4-1
± 15 k
LIN1, LIN2 pins with 220 pF capacitor
VESD4-2
± 15 k
VESD4-3
±25 k
Charge Device Model - JESD22/C101 (CZAP = 4.0 pF
Machine Model - JESD22/A115 (CZAP = 220 pF, RZAP = 0 )
All pins
According to “Hardware Requirements for LIN, CAN and Flexray Interfaces in
Automotive Applications” specification Rev1.1 / December 2nd, 2009
(CZAP = 150 pF, RZAP = 330 )
Contact Discharge, Unpowered
VSUP (10 µF to ground)
WAKE1, WAKE2 (2*18 k serial resistor)
LIN1, LIN2 pins with 220 pF capacitor and indirect ESD coupling
(according to ISO10605 - Annex F)
VESD4-4
±20 k
VESD4-5
± 15 k
VESD5-1
± 25 k
VESD5-2
± 25 k
VESD5-3
±25 k
VESD5-4
±25 k
VESD6-1
±8 k
VESD6-2
±8 k
VESD6-3
±25 k
VESD6-4
±25 k
According to ISO10605 - Rev 2008 test specification
(2.0 k / 150 pF) - Unpowered - Contact discharge
LIN1, LIN2 pins without capacitor
LIN1, LIN2 pins with 220 pF capacitor
VSUP (10 µF to ground)
WAKE1, WAKE2 (2*18 k serial resistor)
(2.0 k / 330 pF) - Powered - Contact discharge
LIN1, LIN2 pins without capacitor
LIN1, LIN2 pins with 220 pF capacitor
VSUP (10 µF to ground)
WAKE1, WAKE2 (2*18 k serial resistor)
33663
Analog Integrated Circuit Device Data
Freescale Semiconductor
7
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 3. Maximum Ratings
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or
permanent damage to the device.
Ratings
Symbol
Value
Unit
Ambient
TA
- 40 to 125
Junction
TJ
- 40 to 150
TSTG
- 40 to 150
C
RJA
150
°C/W
TPPRT
Note 5
C
Thermal Shutdown Temperature
TSHUT
150 to 200
°C
Thermal Shutdown Hysteresis Temperature
THYST
20
°C
Thermal Ratings
C
Operating Temperature
Storage Temperature
Thermal Resistance, Junction to Ambient
Peak package reflow temperature during reflow
(4),(5)
Notes
4. Pin soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may
cause malfunction or permanent damage to the device.
5. Freescale’s Package Reflow capability meets Pb-free requirements for JEDEC standard J-STD-020. For Peak Package Reflow
Temperature and Moisture Sensitivity Levels (MSL), Go to www.freescale.com, search by part number [e.g. remove prefixes/suffixes
and enter the core ID to view all orderable parts. (i.e. MC33xxxD enter 33xxx), and review parametrics.
Table 4. Limits / Maximum test voltage for transient immunity tests
Test Pulse
VS [V]
Pulse repetition
frequency [Hz] (1/T1)
1
-100
2
Test duration [min]
Ri []
Remarks
1 for function test
10
t2 = 0s
10 for damage test
2a
+75
2
2
3a
-150
10
50
3b
+100
10
50
DUT
VSUP
D1
DUT GND
10 µF
Note
Transient Pulse
Generator
(Note)
GND
Waveform per ISO 7637-2. Test Pulses 1, 2a, 3a, 3b
Figure 4. Test Circuit for Transient Test Pulses (VSUP)
33663
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Analog Integrated Circuit Device Data
Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
DUT
1.0 nF
WAKE
18 k
18 k
Transient Pulse
Generator
(Note)
GND
DUT GND
Note Waveform per ISO 7637-2. Test Pulses 1, 2a, 3a, 3b.
Figure 5. Test Circuit for Transient Test Pulses (WAKE1,WAKE2)
DUT
1.0 nF
LIN
Transient Pulse
Generator
(Note)
GND
DUT GND
Note Waveform per ISO 7637-2. Test Pulses 1, 2a, 3a, 3b
Figure 6. Test Circuit for Transient Test Pulses (LIN1,LIN2)
DUT
1.0 nF
INH
Transient Pulse
Generator
(Note)
GND
DUT GND
Note Waveform per ISO 7637-2. Test Pulses 1, 2a, 3a, 3b.
Figure 7. Test Circuit for Transient Test Pulses (INH1,INH2)
33663
Analog Integrated Circuit Device Data
Freescale Semiconductor
9
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 5. Static Electrical Characteristics
Characteristics noted under conditions 7.0 V  VSUP  18 V, - 40 C  TA  125 C, GND = 0 V, unless otherwise noted.
Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
VSUP
7.0
13.5
18.0
V
Functional Operating Voltage(6)
VSUPOP
6.7
–
27
V
Load Dump
VSUPLD
–
–
40
V
3.5
–
5.3
–
270
–
5.8
–
6.7
VUVHYST
–
130
–
VSUP  13.5 V, Recessive State
IS1
–
12.0
22
13.5 V < VSUP < 27 V
IS2
–
–
36
VSUP  13.5 V, Shorted to GND
IS3
–
48
140
IS_N_REC1,2
–
4.0
5.0
IS_N_DOM1,2
–
6.0
8.0
Bus1 Recessive, Bus2 Recessive, Excluding INH1,INH2 Output Current
IS(REC1,REC2)
–
8.0
9.0
Bus1 Recessive, Bus2 Dominant, Excluding INH1,INH2 Output Current
IS(REC1,DOM2)
–
12.0
13.0
Bus1 Dominant, Bus2 Recessive, Excluding INH1,INH2 Output Current
IS(DOM1,REC2)
–
12.0
13.0
Bus1 Dominant, Bus2 Dominant, Excluding INH1,INH2 Output Current
IS(DOM1,DOM2)
–
12.0
16.0
VSUP PIN (DEVICE POWER SUPPLY)
Nominal Operating Voltage
Power-On Reset (POR) Threshold
VPOR
VSUP Ramp Down and INH1, INH2 goes High to Low
Power-On Reset (POR) Hysteresis
VPORHYST
VSUP Under-voltage Threshold (positive and negative)
VUVL, VUVH
Transmission disabled and LIN1,LIN2 bus goes in recessive
VSUP Under-voltage Hysteresis (VUVL - VUVH)
V
V
Supply Current LIN1 and LIN2 in Sleep Mode
mV
A
Supply Current LIN1 Normal Mode - LIN2 Sleep Mode (and vice versa)
Bus1 Recessive, BUS2 Sleep, Excluding INH1,INH2
mV
mA
OR (Bus2 Recessive, BUS1 Sleep, Excluding INH1,INH2)
Bus1 Dominant, BUS2 Sleep, Excluding INH1,INH2
OR (Bus2 Dominant, BUS1 Sleep, Excluding INH1,INH2)
Supply Current when LIN1 and LIN2 are in Normal or Slow or Fast Mode
mA
RXD1, RXD2 OUTPUT PINS (LOGIC)
Low Level Output Voltage
VOL
IIN  1.5 mA
High Level Output Voltage
V
0.0
–
0.9
VOH
V
VEN = 5.0 V, IOUT  250 A
4.25
–
5.25
VEN = 3.3 V, IOUT  250 A
3.0
–
3.5
Notes
6. Device is functional. All features are operating. Electrical parameters are not guaranteed.
33663
10
Analog Integrated Circuit Device Data
Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 5. Static Electrical Characteristics
Characteristics noted under conditions 7.0 V  VSUP  18 V, - 40 C  TA  125 C, GND = 0 V, unless otherwise noted.
Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
Low Level Input Voltage
VIL
–
–
0.8
V
High Level Input Voltage
VIH
2.0
–
–
V
VINHYST
100
300
600
mV
- 60
- 35
- 20
TXD1, TXD2 INPUT PINS (LOGIC)
Input Threshold Voltage Hysteresis
Pull-up Current Source
A
IPU
VEN = 5.0 V, 1.0 V < VTXD < 3.5 V
EN1, EN2 INPUT PINS (LOGIC)
Low Level Input Voltage
VIL
–
–
0.8
V
High Level Input Voltage
VIH
2.0
–
–
V
VINHYST
100
400
600
mV
RPD
100
230
350
kohm
Operating Voltage Range(8)
VBAT
8.0
–
18
V
Supply Voltage Range
VSUP
7.0
–
18
V
VSUP_NON_OP
-0.3
–
40
V
40
90
200
-1.0
–
–
Input Voltage Threshold Hysteresis
Pull-down Resistor
LIN PHYSICAL LAYER - TRANSCEIVER LIN (LIN1, LIN2)(7)
Voltage Range (within which the device is not destroyed)
Current Limitation for Driver Dominant State
IBUS_LIM
Driver ON, VBUS = 18 V
Input Leakage Current at the Receiver
IBUS_PAS_DOM
Driver off; VBUS = 0 V; VBAT = 12 V
Leakage Output Current to GND
Receiver Dominant State
(11)
Receiver Recessive State(12)
µA
–
–
20
IBUS_NO_GND
GNDDEVICE = VSUP; VBAT = 12 V; 0 < VBUS < 18 V
VBAT Disconnected; VSUP_DEVICE = GND; 0 V < VBUS < 18 V(10)
mA
IBUS_PAS_REC
Driver Off; 8.0 V VBAT  18 V; 8.0 V VBUS  18 V; VBUS  VBAT;
VBUS VSUP
Control Unit Disconnected from Ground(9)
mA
mA
-1.0
–
1.0
IBUSNO_BAT
–
–
10
µA
VBUSDOM
–
–
0.4
VSUP
VBUSREC
0.6
–
–
VSUP
Notes
7. Parameters guaranteed for 7.0 V VSUP  18 V.
8.
9.
10.
11.
12.
Voltage range at the battery level, including the reverse battery diode.
Loss of local ground must not affect communication in the residual network.
Node has to sustain the current that can flow under this condition. The bus must remain operational under this condition.
LIN threshold for a dominant state.
LIN threshold for a recessive state.
33663
Analog Integrated Circuit Device Data
Freescale Semiconductor
11
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 5. Static Electrical Characteristics
Characteristics noted under conditions 7.0 V  VSUP  18 V, - 40 C  TA  125 C, GND = 0 V, unless otherwise noted.
Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Min
Typ
Max
0.475
0.5
0.525
–
–
0.175
VLINDOM_LEVEL
–
–
0.25
VSUP
VBAT_SHIFT
VSHIFT_BAT
0.0
–
11.5%
VBAT
GND_SHIFT
VSHIFT_GND
0.0
–
11.5%
VBAT
LIN Wake-up Threshold from Sleep Mode
VBUSWU
–
4.3
5.3
V
LIN Pull-up Resistor to VSUP
RSLAVE
20
30
60
k
CLIN
–
–
30
pF
TLINSD
150
160
200
°C
TLINSD_HYS
–
20
–
°C
–
–
50
–
–
30
-5.0
–
5.0
TINHSD
150
160
200
°C
TINHSD_HYS
–
20
–
°C
Receiver Threshold Center
Symbol
VBUS_CNT
(VTH_DOM + VTH_REC)/2
Receiver Threshold Hysteresis
LIN dominant level with 500 680  and 1.0 k load on the LIN bus
(13)
LIN internal capacitor
Over-temperature Shutdown(14)
Over-temperature Shutdown Hysteresis
VSUP
VHYS
(VTH_REC - VTH_DOM)
Unit
VSUP
INH1, INH2 OUTPUT PINS
Driver ON Resistance (Normal Mode)
Current load capability
IINH_load
From 7.0 V < VSUP < 18 V
Leakage Current (Sleep Mode)
Over-temperature Shutdown Hysteresis
mA
A
ILEAK
0 < VINH < VSUP
Over-temperature Shutdown(15)

INHON
IINH = 50 mA
Notes
13. This parameter is guaranteed by process monitoring but not production tested.
14. When an over-temperature shutdown occurs, the LIN transmitter and receiver are in recessive state and INH switched off. This
parameter is tested with a test mode on ATE and characterized at laboratory.
15. When an over-temperature shutdown occurs, the INH1, INH2 high side are switched off and the LIN transmitter and receiver are in
recessive state. This parameter is tested with a test mode on ATE and characterized at laboratory.
33663
12
Analog Integrated Circuit Device Data
Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 5. Static Electrical Characteristics
Characteristics noted under conditions 7.0 V  VSUP  18 V, - 40 C  TA  125 C, GND = 0 V, unless otherwise noted.
Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
High to Low Detection Threshold (5.5 V < VSUP < 7 V)
VWUHL1
2.0
–
3.9
V
Low to High Detection Threshold (5.5 V < VSUP < 7 V)
VWULH1
2.4
–
4.3
V
VWUHYS1
0.2
–
0.8
V
High to Low Detection Threshold (7 V  VSUP < 27 V)
VWUHL2
2.4
–
3.9
V
Low to High Detection Threshold (7 V  VSUP < 27 V)
VWULH2
2.9
–
4.3
V
VWUHYS2
0.2
–
0.8
V
IWU
–
–
5.0
µA
WAKE1, WAKE2 INPUT PINS
Hysteresis (5.5 V < VSUP < 7 V)
Hysteresis (7 V  VSUP < 27 V)
Wake-up Input Current (VWAKE < 27 V)
33663
Analog Integrated Circuit Device Data
Freescale Semiconductor
13
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTIC
DYNAMIC ELECTRICAL CHARACTERISTIC
Table 6. Dynamic Electrical Characteristics
Characteristics noted under conditions 7.0 V  VSUP  18 V, - 40 C  TA  125 C, GND = 0 V, unless otherwise noted.
Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
LIN1, LIN2 PHYSICAL LAYER
DRIVERS CHARACTERISTICS FOR NORMAL SLEW RATE - 20.0 KBIT/SEC ACCORDING TO LIN PHYSICAL LAYER
SPECIFICATION(16)(17)
33663L AND 33663S DEVICE
Duty Cycle 1:
D1
THREC(MAX) = 0.744 * VSUP; THDOM(MAX) = 0.581 * VSUP
D1 = tBUS_REC(MIN)/(2 x tBIT), tBIT = 50 µs, 7.0 V VSUP18 V
Duty Cycle 2:
0.396
–
–
–
–
0.581
D2
THREC(MIN) = 0.422 * VSUP; THDOM(MIN) = 0.284 * VSUP
D2 = tBUS_REC(MAX)/(2 x tBIT), tBIT = 50 µs, 7.6 V VSUP18 V
LIN1, LIN2 PHYSICAL LAYER
DRIVERS CHARACTERISTICS FOR SLOW SLEW RATE - 10.4 KBIT/SEC ACCORDING TO LIN PHYSICAL LAYER
SPECIFICATION(16)(18)
33663J DEVICE
Duty Cycle 3:
D3
THREC(MAX) = 0.778 * VSUP; THDOM(MAX) = 0.616 * VSUP
D3 = tBUS_REC(MIN)/(2 x tBIT), tBIT = 96 µs, 7.0 V VSUP18 V
Duty Cycle 4:
0.417
–
–
–
–
0.590
–
–
100
D4
THREC(MIN) = 0.389 * VSUP; THDOM(MIN) = 0.251 * VSUP
D4 = tBUS_REC(MAX)/(2 x tBIT), tBIT = 96 µs, 7.6 V VSUP18 V
LIN1, LIN2 PHYSICAL LAYER - DRIVERS CHARACTERISTICS FOR FAST SLEW RATE
Fast Bit Rate (Programming Mode)
BRFAST
kBit/s
LIN1, LIN2 PHYSICAL LAYER - TRANSMITTER CHARACTERISTICS FOR NORMAL SLEW RATE - 20.0 KBIT/SEC(19)
33663S DEVICE
s
Symmetry of Transmitter delay(20)
tTRAN_SYM = MAX (tTRAN_SYM60%, tTRAN_SYM40%)
t TRAN_SYM
-7.25
–
7.25
tTRAN_SYM60% = | tTRAN_PDF60% - tTRAN_PDR60% |
tTRAN_SYM40% = | tTRAN_PDF40% - tTRAN_PDR40% |
Notes
16. Bus load RBUS and CBUS 1.0 nF / 1.0 k, 6.8 nF / 660, 10 nF / 500 . Measurement thresholds: 50% of TXD signal to LIN signal
threshold defined at each parameter. See Figure 8.
17. See Figure 9
18. See Figure 10
19. VSUP from 7.0 to 18 V, bus load RBUS and CBUS 1.0 nF / 1.0 k, 6.8 nF / 660 , 10 nF / 500 . Measurement thresholds: 50% of TXD
signal to LIN signal threshold defined at each parameter. See Figure 8.
20. See Figure 11
33663
14
Analog Integrated Circuit Device Data
Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTIC
Table 6. Dynamic Electrical Characteristics
Characteristics noted under conditions 7.0 V  VSUP  18 V, - 40 C  TA  125 C, GND = 0 V, unless otherwise noted.
Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
t REC_PD
–
–
6.0
t REC_SYM
- 2.0
–
2.0
t REC_PD_S
—
—
5.0
t REC_SYM_S
- 1.3
—
1.3
Unit
LIN1, LIN2 PHYSICAL LAYER - RECEIVERS CHARACTERISTICS ACCORDING LIN2.1(21)
33663L AND 33663J AND 33663S
Propagation Delay and Symmetry(22)
Propagation Delay of Receiver, tREC_PD = MAX (tREC_PDR, tREC_PDF)
Symmetry of Receiver Propagation Delay, tREC_PDF - tREC_PDR
s
LIN1, LIN2 PHYSICAL LAYER: RECEIVER CHARACTERISTICS WITH TIGHTEN LIMITS(21)
33663S DEVICE
Propagation Delay and Symmetry(22)
Propagation Delay of Receiver, tREC_PD = MAX (tREC_PDR, tREC_PDF)
Symmetry of Receiver Propagation Delay, tREC_PDF - tREC_PDR
s
LIN1, LIN2 PHYSICAL LAYER: RECEIVER CHARACTERISTICS - LIN SLOPE 1V/ns(21)
33663S DEVICE
Propagation Delay and Symmetry(23)
Propagation Delay of Receiver, tREC_PD _FAST= MAX (tREC_PDR_FAST,
tREC_PDF_FAST)
Symmetry of Receiver Propagation Delay, tREC_PDF_FAST - tREC_PDR_FAST
s
t REC_PD_FAST
—
—
6.0
t REC_SYM_FAST
- 1.3
—
1.3
SLEEP MODE AND WAKE-UP TIMINGS
Sleep Mode Delay Time(24)
t SD
after EN High to Low to INH High to Low with 100µA load on INH
µs
50
—
91
40
70
100
WAKE-UP TIMINGS
Bus Wake-up Deglitcher (Sleep Mode) (25)
EN Wake-up Deglitcher
(26)
t WUF
Wake-up Deglitcher
(27)
Wake state change to INH Low to High
s
t LWUE
EN High to INH Low to High
s
—
—
15
10
48
70
s
t WF
Notes
21. VSUP from 7.0 to 18 V, bus load RBUS and CBUS 1.0 nF / 1.0 k, 6.8 nF / 660 , 10 nF / 500 . Measurement thresholds: 50% of TXD
signal to LIN signal threshold defined at each parameter. See Figure 8.
22. See Figure 12
23. See Figure 13
24. See Figures 22 and 23
25. See Figures 15 and 17
26. See Figures 14, 18, 22, and 23
27. See Figures 16, 22, and 23
33663
Analog Integrated Circuit Device Data
Freescale Semiconductor
15
ELECTRICAL CHARACTERISTICS
TIMING DIAGRAMS
Table 6. Dynamic Electrical Characteristics
Characteristics noted under conditions 7.0 V  VSUP  18 V, - 40 C  TA  125 C, GND = 0 V, unless otherwise noted.
Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
t TXDDOM
3.75
5.0
6.25
ms
t FIRST_DOM
—
50
80
ms
—
—
45
12.5
—
—
12.5
—
—
12.5
—
—
TXD TIMING
TXD Permanent Dominant State Delay(28)
FIRST DOMINANT BIT VALIDATION
First dominant bit validation delay when device in Normal Mode(29)
FAST BAUD RATE TIMING
EN Low Pulse Duration to Enter in Fast Baud Rate Using Toggle Function (30)
s
t1
EN High to Low and Low to High
TXD Low Pulse Duration to Enter in Fast Baud Rate Using Toggle Function (30)
t2
Delay Between EN Falling Edge and TXD Falling Edge to Enter in Fast Baud
Rate Using Toggle Function (30)
t3
Delay Between TXD Rising Edge and EN Rising Edge to Enter in Fast Baud
Rate Using Toggle Function (30)
t4
RXD Low Level duration after EN rising edge to validate the Fast Baud Rate
entrance(30)
t5
µs
µs
µs
µs
1.875
6.25
Notes
28. The LIN is in recessive state and the receiver is still active
29. See Figures 14, 15, 16, and 21
30. See Figures 19 and 20
TIMING DIAGRAMS
VSUP
VSUP
TXD
RXD
GND
R0
LIN
C0
Note R0 and C0: 1.0 k/1.0 nF, 660 /6.8 nF, and 500 /10 nF.
Figure 8. Test Circuit for Timing Measurements
33663
16
Analog Integrated Circuit Device Data
Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
TIMING DIAGRAMS
TXD
TBIT
TBIT
tBUS_DOM(MAX)
VLIN_REC
tBUS_REC(MIN)
THREC(MAX) 74.4% VSUP
Thresholds of
receiving node 1
THDOM(MAX) 58.1% VSUP
LIN
Thresholds of
receiving node 2
THREC(MIN) 42.2% VSUP
THDOM(MIN) 28.4% VSUP
tBUS_DOM(MIN)
tBUS_REC(MAX)
RXD
Output of receiving Node 1
tREC_PDF(1)
tREC_PDR(1)
RXD
Output of receiving Node 2
tREC_PDF(2)
tREC_PDR(2)
Figure 9. LIN1, LIN2 Timing Measurements for Normal Baud Rate (33663L, 33663S)
TXD
TBIT
TBIT
tBUS_DOM(MAX)
VLIN_REC
tBUS_REC(MIN)
THREC(MAX) 77.8% VSUP
Thresholds of
receiving node 1
THDOM(MAX) 61.6% VSUP
LIN
Thresholds of
receiving node 2
THREC(MIN) 38.9% VSUP
THDOM(MIN) 25.1% VSUP
tBUS_DOM(MIN)
tBUS_REC(MAX)
RXD
Output of receiving Node 1
tREC_PDF(1)
tREC_PDR(1)
RXD
Output of receiving Node 2
tREC_PDR(2)
tREC_PDF(2)
Figure 10. LIN1, LIN2 Timing Measurements for Slow Baud Rate (33663J)
33663
Analog Integrated Circuit Device Data
Freescale Semiconductor
17
ELECTRICAL CHARACTERISTICS
TIMING DIAGRAMS
TXD
VLIN_REC
VBUSREC
60% VSUP
VBUSDOM
40% VSUP
LIN BUS SIGNAL
VSUP
tTRAN_PDR40%
tTRAN_PDR60%
tTRAN_PDF60%
tTRAN_PDF40%
Figure 11. LIN1, LIN2 Transmitter Timing for 33663S
VLIN_REC
VBUSREC
60% VSUP
VBUSDOM
40% VSUP
VSUP
LIN BUS SIGNAL
RXD
tREC_PDF
tREC_PDR
Figure 12. LIN1, LIN2 Receiver Timing
VLIN_REC
VBUSREC
VBUSDOM
1V/ns
60% VSUP
40% VSUP
VSUP
LIN BUS SIGNAL
RXD
tREC_PDF_FAST
tREC_PDR_FAST
Figure 13. LIN1, LIN2 Receiver Timing LIN Slope 1.0 V/ns
33663
18
Analog Integrated Circuit Device Data
Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
FUNCTIONAL DIAGRAMS
FUNCTIONAL DIAGRAMS
EN1
EN1
INH1
INH1
TXD1
TXD1 (High or Low)
LIN1
LIN1
RXD1
Normal Mode
Normal Mode
t LWUE
RXD1
(High Z)
WAKE1
WAKE1
LIN2
VBUSWU
EN2
tWUF
INH2
Normal Mode
INH2
Normal Mode
TXD2
tFIRST_DOM
EN2
LIN2
TXD2 (High or Low)
RXD2
RXD2 (High Z)
WAKE2
WAKE2
Figure 14. LIN Module 1 EN1 Pin Wake-up with TXD1
High & LIN Module 2 in Normal Mode
Awake Mode
Figure 15. LIN Module 1 in Normal Mode & LIN Module 2
LIN2 Wake-up with TXD2 LOW
33663
Analog Integrated Circuit Device Data
Freescale Semiconductor
19
ELECTRICAL CHARACTERISTICS
FUNCTIONAL DIAGRAMS
WAKE1
WAKE after deglitcher
t WF
INH1
EN1
tFIRST_DOM
TXD1 (High or Low)
Normal Mode
LIN1
RXD1 RXD2
(High Z)
Awake Mode
WAKE2
WAKE after deglitcher
t WF
INH2
tFIRST_DOM
EN2
TXD2 (High or Low)
Normal Mode
LIN2
RXD2
(High Z)
Awake Mode
Figure 16. LIN Module 1 Wake1 Pin Wake-up with TXD1
Low & LIN Module 2 Wake2 Pin Wake-up with TXD2 High
33663
20
Analog Integrated Circuit Device Data
Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
FUNCTIONAL DIAGRAMS
INH
EN
TXD
No wake-up
t>tWUF
LIN
(High Z)
RXD
WAKE
Device in
Communication Mode
Preparation to Sleep Mode
No communication available
Wake & LIN wake-up events not taken into
account
Sleep Mode
No communication available
Wake & LIN wake-up events
allowed
Awake
Mode
Normal Mode
t SD
Figure 17. Bus Wake-up with LIN bus in Dominant During the Preparation to Sleep Mode
(same sequence for LIN1 & LIN2)
EN pin
tLWUE
EN internal signal
tLWUE
EN pin
t < tLWUE
EN internal signal
5V
EN pin
t < tLWUE
5V
EN internal signal
Figure 18. EN1, EN2 Pin Deglitcher
t 1 (45 s)
EN
TXD
Fast Baud Rate entrance
t 2 (12.5 s)
t 3 (12.5 s)
t 4 (12.5 s)
LIN
Fast Baud Rate validation
RXD
t5
Figure 19. Fast Baud Rate Selection (Toggle Function) for LIN1 or LIN2
33663
Analog Integrated Circuit Device Data
Freescale Semiconductor
21
ELECTRICAL CHARACTERISTICS
FUNCTIONAL DIAGRAMS
t 1 (45 s)
EN
Exit Fast Baud Rate
t 2 (12.5 s)
TXD
t 3 (12.5 s)
t 4 (12.5 s)
LIN
RXD stays High for Normal or Slow Mode validation
RXD
Figure 20. Fast Baud Rate Mode Exit (Back to Normal or Slow Slew Rate) for LIN1 or LIN2
VSUP
POR (3.5-5.3 V)
VSUP
VUVL
POR (3.5-5.3 V)
160 µs *
EN1
INH1
EN1
TXD1
LIN1 in Normal Mode
INH1
TXD1
(High or Low)
(High or Low)
LIN1
LIN1
Awake Mode
RXD1
RXD1 (High Z)
EN2
INH2
EN2
TXD2
(High or Low)
LIN2 in Normal Mode
(High or Low)
LIN2
(High Z)
(High or Low)
INH2
TXD2
(High or Low)
LIN2
Awake Mode
RXD2 (High Z)
RXD2
(High Z)
*: this parameter is guaranteed by design
Figure 21. Power Up and Down Sequences
33663
22
Analog Integrated Circuit Device Data
Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
FUNCTIONAL DIAGRAMS
INH
t LWUE
EN
TXD
LIN
(High Z)
RXD
t WF
WAKE
WAKE after deglitcher
Device in
Communication Mode
Preparation to Sleep Mode
No communication allowed
LIN & Wake wake up events not taken
into account
Sleep
Mode
t SD
Figure 22. Sleep Mode Sequence for LIN1 or LIN2
33663
Analog Integrated Circuit Device Data
Freescale Semiconductor
23
ELECTRICAL CHARACTERISTICS
FUNCTIONAL DIAGRAMS
INH
INH
t LWUE
EN
EN
TXD
TXD
No communication
allowed
LIN
No communication
allowed
LIN
(High Z)
RXD
t LWUE
(High Z)
RXD
WAKE
(case 1)
WAKE
(case 2)
WAKE after deglitcher
(case 1)
WAKE after deglitcher
(case 2)
t = tWF
Device in
Communication Mode
Preparation to
Sleep Mode
t tWF
Awake Mode
t < t SD
The device does not enter in Sleep Mode
INH
Awake Mode
Device in
Communication Mode
Preparation to Sleep Mode (t < tSD)
The device does not enter in Sleep Mode
t LWUE
EN
TXD
No communication
allowed
LIN
RXD
(High Z)
WAKE
(case 3)
t tWF
WAKE after deglitcher
(case 3)
t tSD
Device in
Communication Mode
Preparation to
Sleep Mode
Sleep Awake Mode
Mode
Figure 23. Examples of Sleep Mode Sequences for LIN1 or LIN2
33663
24
Analog Integrated Circuit Device Data
Freescale Semiconductor
FUNCTIONAL DESCRIPTION
INTRODUCTION
FUNCTIONAL DESCRIPTION
INTRODUCTION
The 33663L and 33663J are both a Physical Layer component dedicated to automotive LIN sub-bus applications.
The 33663L features include a 20 kbps baud rate and the 33663J a 10 kbps baud rate. Both integrate fast baud rate for test
and programming modes, excellent ESD robustness, immunity against disturbance, and radiated emission performance. They
have safe behavior, in case of a LIN bus short-to-ground, or a LIN bus leakage during low power mode.
Digital inputs are 5.0 and 3.3 V compatible without any external required components.
The INH1 and INH2 outputs may be used to control an external voltage regulator, or to drive a LIN bus pull-up resistor.
FUNCTIONAL PIN DESCRIPTION
POWER SUPPLY PIN (VSUP)
The VSUP supply pin is the power supply pin for the 33663L or 33663J. In an application, the pin is connected to a battery
through a serial diode, for reverse battery protection. The DC operating voltage is from 7.0 to 18 V. This pin sustains standard
automotive condition, such as 40 V during load dump. To avoid a false bus message, an under-voltage on VSUP disables the
transmission path (from TXD to LIN) when VSUP falls below 6.7 V. Supply current in the Sleep mode is typically 6.0 A for one
LIN Module.
GROUND PIN (GND)
In case of a ground disconnection at the module level, the 33663L and 33663J do not have significant current consumption
on the LIN bus pin when in the recessive state.
LIN BUS PIN (LIN1, LIN2)
The LIN1 and LIN2 pins represent the single-wire bus transmitter and receiver. It is suited for automotive bus systems, and is
compliant to the LIN bus specification 1.3, 2.0, 2.1, and SAEJ2602-2.
The LIN interface is only active during Normal mode.
LIN overtemperature
OR
INH overtemperature
INH switched off &
LIN transmitter and receiver disabled
VSUP
LIN Wake up
INH_ON
INH
LIN Driver
Slope Control
EN_sleep
LIN Undervoltage
30 k
TXD Dominant
EN
725 k
LIN
X1
35µA
TXD
RXD
Receiver
Transmitter Characteristics
The LIN driver is a low side MOSFET with internal over-current thermal shutdown. An internal pull-up resistor with a serial
diode structure is integrated, so no external pull-up components are required for the application in a slave node. An additional
pull-up resistor of 1.0 k must be added when the interface is used in the master node.
The LIN pin exhibits no reverse current from the LIN bus line to VSUP, even in the event of a GND shift or VSUP disconnection.
The 33663 is tested according to the application conditions (i.e. in normal mode and recessive state during communication).
The transmitter has a 20 kbps baud rate (Normal baud rate) for the 33663L and 33663S devices, or 10 kbps baud rate (Slow
baud rate) for the 33663J device.
33663
Analog Integrated Circuit Device Data
Freescale Semiconductor
25
FUNCTIONAL DESCRIPTION
FUNCTIONAL PIN DESCRIPTION
As soon as the device enters Normal mode, the LIN transmitter will be able to send the first dominant bit only after the
tFIRST_DOM delay. tFIRST_DOM delay has no impact on the receiver. The receiver will be enabled as soon as the device enters
Normal mode.
Receiver Characteristics
The receiver thresholds are ratiometric with the device supply pin.
If the VSUP voltage goes below the VSUP under-voltage threshold (VUVL, VUVH), the bus LIN1 and bus LIN2 enter into a recessive
state even if communication is sent to TXD1 or TXD2.
For the LIN Module 1, in case of LIN1 Thermal Shutdown, the transceiver and receiver are in recessive and INH1 turned off.
When the temperature is below the TLINSD, INH1 and LIN1 will be automatically enabled. The same behavior is valid for LIN
Module 2.
For each LIN Module, the Fast Baud Rate selection is reported by the RXD pin. Fast Baud Rate is activated by the toggle
function (See Figure 19). At the end of the toggle function, just after EN rising edge, RXD pin is kept low for t5 to flag the Fast
Baud Rate entry (See Figure 19).
To exit the Fast Baud Rate and return in Normal or Slow baud rate, a toggle function is needed. At the end the toggle function,
RXD pin stays high to signal Fast Baud Rate exit (See Figure 20). The device enters into Fast Baud Rate at room and hot
temperature.
DATA INPUT PINS (TXD1, TXD2)
The TXD1 and TXD2 inputs pins are the MCU interface to control the state of the LIN1 and LIN2 outputs. When TXD1 (TXD2)
is LOW (dominant), LIN1 (LIN2) output is LOW; when TXD1 (TXD2) is HIGH (recessive), the LIN1 (LIN2) output transistor is
turned OFF. TXD1/TXD2 pins thresholds are 3.3 V and 5.0 V compatible.
These pins have an internal pull-up current source to force the recessive state if the input pins are left floating.
If TXD1 (TXD2) stays low (dominant sate) more than 5.0 ms (typical value), the LIN1 (LIN2) transmitter of LIN Module goes
automatically into recessive state.
DATA OUTPUT PINS (RXD1, RXD2)
Each LIN Modules integrate the same RXD output structure and functionality. Both pins are independent. The following
description is the same for both.
RXD output pin is the MCU interface, which reports the state of the LIN bus voltage.
In Normal or Slow baud rate, LIN HIGH (recessive) is reported by a high voltage on RXD; LIN LOW (dominant) is reported by
a low voltage on RXD. The RXD output structure is a tristate output buffer.
EN
X1
200 k
RXD
LIN_RXD
VSUP
EN_RXD
Receiver
30 k
LIN
Slope
Control
Figure 24. RXD interface
The RXD output pins are the receiver output of the LIN interface. The low level is fixed. The high level is dependent on EN
voltage. If EN is set at 3.3 V, RXD VOH is 3.3 V. If EN is set at 5.0 V, RXD VOH is 5.0 V. The RXD1 and RXD2 VOH level can be
defined independently.
In sleep mode, RXD are high-impedance. When a wake-up event is recognized from the WAKE pin or from the LIN bus pin,
RXD is pulled LOW to report the wake-up event. An external pull-up resistor may be needed.
33663
26
Analog Integrated Circuit Device Data
Freescale Semiconductor
FUNCTIONAL DESCRIPTION
FUNCTIONAL PIN DESCRIPTION
ENABLE INPUT PINS (EN1, EN2)
EN1 (EN2) input pin controls the operation mode of the interface. If EN1 (EN2) = 1, the interface is in Normal mode, TXD1
(TXD2) to LIN1 (LIN2) after tFIRS_DOM delay and LIN1 (LIN2) to RXD1 (RXD2) paths are both active. EN1 (EN2) pin thresholds are
3.3 V and 5.0 V compatible. RXD1 (RXD2) VOH level follows EN1 (EN2) pin high level. One LIN Module enters the Sleep Mode
by setting EN1 (EN2) LOW for a delay higher than tSD (70 µs typ. value) and if the WAKE1 (WAKE2) pin state doesn’t change
during this delay. (see Figure 22). Both LIN Modules enter Sleep Mode if EN1 & EN2 LOW.
A combination of the logic levels on EN1 (EN2) and TXD1 (TXD2) pins allows the device to enter in Fast Baud Rate mode of
operation (see Figure 19).
INHIBIT OUTPUT PINS (INH1, INH2)
The INH1 (INH2) output pin is connected to an internal high side power MOSFET. The pin has two possible main functions. It
can be used to control an external switchable voltage regulator having an inhibit input. It can also be used to drive the LIN bus
external resistor in the master node application, thanks to its high drive capability. This is illustrated in Figure 26.
In Sleep mode, INH1 (INH2) is turned OFF. If a voltage regulator inhibit input is connected to INH1 (INH2), the regulator will
be disabled. If the master node pull-up resistor is connected to INH1 (INH2), the pull-up resistor will be unpowered and left
floating.
In case of a INH1 (INH2) thermal shutdown, the high side is turned off and the LIN1 (LIN2) transmitter and receiver are in
recessive state. An external 10 to 100 pF capacitor on INH1 (INH2) pin is advised in order to improve EMC performances.
WAKE INPUT PINS (WAKE1, WAKE2)
The WAKE1 (WAKE2) pin is a high-voltage input used to wake-up the device from the Sleep mode. WAKE1 (WAKE2) is
usually connected to an external switch in the application.
The WAKE1 (WAKE2) pin has a special design structure and allows wake-up from both HIGH to LOW or LOW to HIGH
transitions. When entering into Sleep mode, the corresponded LIN Module monitors the state of its WAKE pin and stores it as a
reference state. The opposite state of this reference state will be the wake-up event used by the LIN Module to enter again into
Normal mode.
If the WAKE1 (WAKE2) pin state changes during the Sleep mode Delay Time (tSD) or before EN1 (EN2) goes low with a
deglitcher lower than tWF, the LIN Module will not enter in Sleep mode, but will go into Awake mode (See Figure 23).
An internal filter is implemented to avoid false wake-up event due to parasitic pulses (See Figure 16). WAKE1 (WAKE2) pin
input structure exhibits a high-impedance, with extremely low input current when voltage at this pin is below 27 V. Two serial
resistors should be inserted in order to limit the input current mainly during transient pulses and ESD. The total recommended
resistor value is 33 k. An external 10 to 100 nF capacitor is advised for better EMC and ESD performances.
Important The WAKE1 (WAKE2) pin should not be left open. If the wake-up function is not used, WAKE1 (WAKE2) should
be connected to ground to avoid a false wake-up.
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Analog Integrated Circuit Device Data
Freescale Semiconductor
27
FUNCTIONAL DEVICE OPERATION
OPERATIONAL MODES
FUNCTIONAL DEVICE OPERATION
OPERATIONAL MODES
As described by the following, the 33663L, 33663J, and 33663S have two operational modes, Normal and Sleep. In addition,
there are two transitional modes: Awake mode which allows the device to go into Normal mode, and Preparation to Sleep mode
which allows the device to go into Sleep mode.
NORMAL OR SLOW BAUD RATE
In the Normal mode, the LIN bus can transmit and receive information.
The 33663L and 33663S (20 kbps) have a slew rate and timing compatible with Normal Baud Rate and LIN protocol
specification 1.3, 2.0, 2.1, and 2.2.
The 33663J (10 kbps) has a slew rate and timing compatible with Low Baud Rate.
From Normal mode, the three devices can enter into Fast Baud Rate (Toggle function).
FAST BAUD RATE
In fast baud rate, the slew rate is around 10 times faster than the normal baud rate. This allows very fast data transmission
(> 100 kbps) -- for example, electronic control unit (ECU) tests and microcontroller program download. The bus pull-up resistor
might be adjusted to ensure a correct RC time constant in line with the high baud rate used.
The following sequence is applicable to both LIN Modules independently.
Fast baud rate is entered via a special sequence (called toggle function) as follows:
1. EN1 pin set LOW while TXD1 is HIGH
2. TXD1 stays HIGH for 12.5 µs min
3. TXD1 set LOW for 12.5 µs min
4. TXD1 pulled HIGH for 12.5 µs min
5. EN1 pin set LOW to HIGH while TXD1 still HIGH
The LIN Module enters into the fast baud rate if the delay between step 1 to step 5 is 45 µs maximum. The toggle function is
described in Figures 19. Once in fast baud rate, the same toggle function just described previously is used to bring the LIN Module
1 back into normal baud rate.
Fast baud rate selection is reported to the MCU by the RXD1 pin. Once the LIN Module 1 enters in this fast baud rate, the
RXD1 pin goes at low level for t5. When LIN Module 1 returns to normal baud rate with the same toggle function, the RXD1 pin
stays high. Both sequences are illustrated in Figures 19 and 20.
PREPARATION TO SLEEP MODE
The following sequence is applicable to both LIN Modules simultaneously or separately. Here it is detailed with the LIN Module
1.
To enter the Preparation to Sleep mode, EN1 must be low for a delay higher than tLWUE.
• If the WAKE1 pin state doesn’t change during tSD and tLWUE, then the LIN Module 1 goes in Sleep Mode.
• If the WAKE1 pin state changes during tSD and if tWF is reached after end of tSD, then the LIN Module 1 goes into Sleep
mode after the end of tSD timing.
• If the WAKE1 pin state changes during tSD and tWF delay has been reached before end of tSD, then the LIN Module 1 goes
into Awake Mode.
• If the WAKE1 pin state changes before tSD and the delay tWF ends during tSD, then the LIN Module 1 goes in Awake Mode.
• If EN1 goes high for a delay higher than tLWUE, the LIN Module 1 returns in Normal mode.
SLEEP MODE
The following Sleep mode paragraph is applicable to both LIN Modules simultaneously or separately. LIN Module 1 is an
example.
To enter into Sleep mode, EN1 must be low for a delay longer than tSD and the WAKE1 pin must stay in the same state (High
or Low) during this delay. The LIN Module 1 conditions to not enter Sleep mode, but enter Awake mode are detailed in the
Preparation into Sleep Mode chapter. See Figure 23.
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Analog Integrated Circuit Device Data
Freescale Semiconductor
FUNCTIONAL DEVICE OPERATION
OPERATIONAL MODES
In Sleep mode, the transmission path is disabled and the LIN Module 1 is in Low Power mode. Supply current from VSUP is
very low. Wake-up can occur from LIN1 bus activity, from the EN1 pin and from the WAKE1 input pin. If during the preparation
to Sleep mode delay (tSD), the LIN1 bus goes low due to LIN1 network communication, the LIN Module 1 still enters Sleep mode.
The LIN Module 1 can be awakened by a recessive to dominant start, followed by a dominant to recessive state after t > tWUF.
After a wake-up event, the LIN Module 1 enters into Awake mode. In Sleep mode, the LIN Module 1 internal 725 kOhm pullup resistor is connected and the 30 kOhm is disconnected.
DEVICE POWER-UP (Awake Transitional Mode)
At power-up (VSUP rises from zero), when VSUP is above the Power-On Reset voltage, both LIN Modules automatically switch
after a 160 µs delay time to the Awake transitional mode. Both INH pins (INH1 and INH2) go to a HIGH state and RXD1and RXD2
to a LOW state. See Figure 21.
DEVICE WAKE-UP EVENTS
The 33663L, 33663J and 33663S can be awakened from Sleep mode by three wake-up events:
• Remote wake-up via LIN1 and/or LIN2 bus activity
• Via the EN1 and/or EN2 pin
• Toggling the WAKE1 and/or WAKE2 pin
Remote Wake from LIN1, LIN2 Bus (Awake Transitional Mode)
Each LIN Transceiver is awakened by its LIN dominant pulse longer than tWUF. Dominant pulse means: a recessive to
dominant transition, wait for t > tWUF, then a dominant to recessive transition. This is illustrated in Figure 15. Once the wake-up
is detected (during the dominant to recessive transition), the LIN Module waken up by its LIN enters into Awake mode, with its
INH HIGH and RXD pulled LOW.
Once in the Awake mode, its EN pin has to be set to 3.3 V or 5.0 V (depending on the system) to enter into Normal mode.
Once in Normal mode, the LIN Module has to wait tFIRST_DOM delay before transmitting the first dominant bit.
Wake-up from EN1, EN2 pins
Each LIN Module can be awakened by a LOW to HIGH transition of its EN pin. When EN is switched from LOW to HIGH and
stays HIGH for a delay higher than tLWUE, the LIN Module is awakened and enters into Normal mode. See Figure 14. Once in
Normal mode, the LIN Module has to wait tFIRST_DOM delay before transmitting the first dominant bit.
Wake-up from WAKE1, WAKE2 Pins (Awake Transitional Mode)
Just before entering the Sleep mode, the WAKE pin state of the concerned LIN Module is stored. A change in the level longer
than the deglitcher time (70 µs maximum) will generate a wake-up, and the LIN Module enters into the Awake Transitional mode,
with its INH HIGH and RXD pulled LOW. See Figure 16. The LIN Module goes into Normal mode when its EN is switched from
LOW to HIGH and stays HIGH for a delay higher than tLWUE. Once in Normal mode, the LIN Module has to wait tFIRST_DOM delay
before transmitting the first dominant bit.
33663
Analog Integrated Circuit Device Data
Freescale Semiconductor
29
FUNCTIONAL DEVICE OPERATION
OPERATIONAL MODES
FAIL-SAFE FEATURES
Tables 7 describes the 33663 protections.
Table 7.
Fail Safe Features
BLOCK
FAULT
FUNCTIONA
L MODE
CONDITION
FALLOUT
RECOVERY
CONDITION
RECOVERY
FUNCTIONALITY
MODE
Power
Supply
Power on Reset
(POR)
All modes
VSUP < 3.5 V (min) then
power up
No internal supplies
Condition
gone
Device goes in Awake
mode whatever the
previous device mode
INH1 AND/OR
INH2 Thermal
Shutdown.
For the failed
LIN Module:
Temperature > 160 °C
(typ)
INH high side of the
failed LIN Module turned
off and its LIN
transmitter and receiver
in recessive State
Condition
gone
LIN Module returns in
same functional mode
VSUP < VUVL
Both LIN transmitters in
recessive state
Condition
gone
Device returns in same
functional mode
TXD pin low for more than
5.0 ms (typ)
LIN transmitter of the
failed LIN Module in
recessive state
Condition
gone
LIN Module returns in
same functional mode
Temperature > 160 °C
(typ)
LIN transmitter and
receiver of the failed LIN
Module in recessive
state and its INH high
side turned off
Condition
gone
LIN Module returns in
same functional mode
INH1
INH2
Each LIN Module
has its own INH
Thermal
Shutdown.
Normal,
Awake &
Preparation to
Sleep modes
VSUP undervoltage
LIN1
LIN2
TXD1 AND/OR
TXD2 Pins
Permanent
Dominant
LIN1 AND/OR
LIN2 Thermal
Shutdown.
Each LIN Module
has its own LIN
Thermal
Shutdown.
Normal
Normal mode
33663
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Analog Integrated Circuit Device Data
Freescale Semiconductor
FUNCTIONAL DEVICE OPERATION
OPERATIONAL MODES
EN1 HIGH TO LOW for t >tLWUE
Toggle Function
EN1 LOW TO HIGH for t >tLWUE
Fast Baud Rate
(10x)
EN1 HIGH TO LOW for t >tLWUE
(1)
Internal WAKE1
State changes during tSD
Awake
(4)
LIN1
Normal Baud Rate or
Slow Baud Rate
Preparation
to Sleep
Toggle Function (4)
EN1 LOW TO HIGH for t> tLWUE
LIN1 bus dominant pulse
for t>tWUF (2)
Or
WAKE1 pin state changes
(3)
for t>t WF
Internal WAKE1 (1)
state doesn’t change
during tSD
EN1 LOW TO HIGH for t>t LWUE
Sleep
LIN MODULE 1
VSUP > VPOR
Power-Up
EN2 HIGH TO LOW for t >tLWUE
Toggle Function (4)
EN2 LOW TO HIGH for t >t LWUE
Awake
Internal WAKE2 (1)
State changes during t SD
LIN2 bus dominant pulse
for t>tWUF (2)
Or
WAKE2 pin state changes
(3)
for t>tWF
Sleep
Fast Baud Rate
(10x)
EN2 HIGH TO LOW for t >tLWUE
LIN2
Normal Baud Rate or
Slow Baud Rate
Preparation to
Sleep
Toggle Function
(4)
EN2 LOW TO HIGH for t > t LWUE
Internal WAKE2 (1)
State doesn’t change
during tSD
EN2 LOW TO HIGH for t >t LWUE
LIN MODULE 2
(1)
:internal WAKE is the WAKE signal filtered by tWF (WAKE deglitcher)
:see figures 15 and 18
:see figures 14 and 17
(4)
:the Toogle Function is guaranteed at ambiant and hot temperature
(2)
(3)
Figure 25. Operational and Transitional Modes State
Table 7. Explanation of Operational and Transitional Modes State Diagram (each transceiver)
Operational/
Transitional
Sleep Mode
Awake
Preparation
to Sleep
Mode
Normal Mode
LIN1, LIN2
Recessive state, driver off with
725 k pull-up.
Recessive state, driver off. 
725 k pull-up active.
Recessive state, driver off with 
725 k pull-up
Driver active. 30 k pull-up
active. 
Normal Baud Rate for 33662L
and 33662S
INH1
INH2
EN1
EN2
TXD1, TXD2
OFF
LOW
X
High-impedance. HIGH if
external pull-up to VDD.
LOW
X
LOW.
(low)
ON
If external pull-up, HIGH-to-LOW
transition reports wake-up.
(high)
ON
LOW
X
High-impedance. HIGH if
external pull-up to VDD.
HIGH
LOW to drive LIN bus in dominant
Report LIN bus state:
• Low LIN bus dominant
• High LIN bus recessive
(high)
ON
(high)
RXD1, RXD2
HIGH to drive LIN bus in
recessive.
Slow Baud Rate for 33662J
Fast Baud Rate (> 100 kbps) for
33662L, 33662S & 33662J
X = Don’t care.
33663
Analog Integrated Circuit Device Data
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31
FUNCTIONAL DEVICE OPERATION
OPERATIONAL MODES
COMPATIBILITY WITH LIN1.3
Following the Consortium LIN specification Package, Revision 2.1, November 24, 2006, Chapter 1.1.7.1 Compatibility with
LIN1.3 page 15:
The LIN 2.1 physical layer and is backward compatible with the LIN 1.3 physical layer, but not the other way around. The LIN
2.1 physical layer sets harder requirements, i.e. a node using the LIN 2.1 physical layer can operate in a LIN 1.3 cluster.
33663
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Analog Integrated Circuit Device Data
Freescale Semiconductor
TYPICAL APPLICATION
OPERATIONAL MODES
TYPICAL APPLICATION
The 33663 can be configured for several applications. The figure below shows LIN2 as a slave node and LIN1 as a master
node application. An additional pull-up resistor of 1.0 k in series with a diode must be added when the device is used in the
master node.
D1
Regulator
C1
47μF
C2
100nF
VSUP
12V
INH2
5V or
3.3V
VDD
EN1
I/O
LIN
MODULE 1
VDD
*
RXD1
TXD1
MCU
VDD
*
RXD2
TXD2
*: Optional 2.2k
RXD2
TXD2
R1
18k
R2
18k
INH1
D2
R6
1k
R6
2.2k
LIN1
LIN Bus1
EN2
I/O_2
C3
100nF
RXD1
(LIN 1)
TXD1
R3
2.2k
WAKE1
33663
VBAT
LIN
MODULE 2
(LIN 2)
WAKE2
C4
100nF
R4
18k
R5
18k
LIN2
LIN Bus2
if implemented
GND
Figure 26. 33663 Typical Application
33663
Analog Integrated Circuit Device Data
Freescale Semiconductor
33
PACKAGING
PACKAGE DIMENSIONS
PACKAGING
PACKAGE DIMENSIONS
Important For the most current revision of the package, visit www.Freescale.com and do a keyword search on the 98A.
Dimensions shown are provided for reference ONLY.
EF SUFFIX
14-PIN
98ASB42565B
REVISION J
33663
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Analog Integrated Circuit Device Data
Freescale Semiconductor
PACKAGING
PACKAGE DIMENSIONS
EF SUFFIX
14-PIN
98ASB42565B
REVISION J
33663
Analog Integrated Circuit Device Data
Freescale Semiconductor
35
REVISION HISTORY
REVISION HISTORY
REVISION
DATE
DESCRIPTION OF CHANGES
1.0
7/2012
•
Initial Release.
2.0
12/2013
•
•
Removed HBM row: INH1, INH2 pins versus GND - VESD1-3 - 8.0 k
Changed LIN dominant level with 500 680  and 1.0 k load on the LIN bus Max from 0.3 to
0.25
33663
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Analog Integrated Circuit Device Data
Freescale Semiconductor
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Document Number: MC33663
Rev. 2.0
12/2013
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