Radiation Hardened Programmable Low Power Op Amps HS-3530ARH, HS-3530AEH Features The HS-3530ARH, HS-3530AEH are Low Power Operational Amplifiers, which are internally compensated monolithic devices offering a wide range of performance specifications. Parameters such as power dissipation, slew rate, bandwidth, noise and input DC parameters are programmed by selecting an external resistor or current source. Supply voltages as low as ±3V may be used with little degradation of AC performance. The HS-3530ARH, HS-3530AEH have been specifically designed to meet exposure to space radiation environments. Operation from -55°C to +125°C is guaranteed. • Radiation Performance - Gamma Dose . . . . . . . . . . . . . . . . . . . . . . . . 3 x 105 RAD(Si) - SEL . . . . . . . . . . . . . . . . . . . . . . . . Immune (RSG DI Process) - Low dose rate . . . . . . . . . . . . . . . . . . . . . . . . . . 100krad(Si)* A major advantage of the HS-3530ARH, HS-3530AEH is that operating characteristics remain virtually constant over a wide supply range (±3V to ±15V), allowing the amplifiers to offer maximum performance in almost any system, including battery operated equipment. A primary application for these devices is in active filtering and conditioning for a wide variety of signals that differ in frequency and amplitude. Also, by modulating the set current, they can be used for designs such as current controlled oscillators/modulators, sample and hold circuits and variable active filters. *Product capability established by initial characterization. The EH version is acceptance tested on a wafer by wafer basis to 50krad(Si) at low dose rate. • Wide Range AC Programming - Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . 0.025 to 0.1V/µs - Gain X Bandwidth . . . . . . . . . . . . . . . . . . 30kHz to 750kHz • Wide Range DC Programming - Power Supply Range . . . . . . . . . . . . . . . . . . . ±3.0V to ±15V • Supply Current . . . . . . . . . . . . . . . . . . . . . . . . . 15µA to 150µA • Output Current . . . . . . . . . . . . . . . . . . . . . . . 0.25mA to 2.5mA • Quiescent Power . . . . . . . . . . . . . . . . . . . . . . . . . 4.8mW (Max) • Dielectrically Isolated Device Islands • Short Circuit Protection Specifications • Full -55°C to +125°C Military Temperature Range Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed below must be used when ordering. Pin Configurations HS2-3530ARH (CAN), MACY1-X8 TOP VIEW Detailed Electrical Specifications for the HS-3530ARH, HS-3530AEH are contained in SMD 5962-95687. A “hot-link” to the DLA website is also provided on the Product Information page for downloading the document. www.intersil.com/products/deviceinfo.asp?pn=HS-3530ARH The Intersil Quality Management Plan, listing all screening operations, is available on our website. www.intersil.com/design/quality/manuals.asp ISET 8 OFFSET NULL INVERTING INPUT 1 7 2 NON-INVERTING INPUT 6 5 3 4 Ordering Information ORDERING NUMBER PART NUMBER TEMP. RANGE (°C) HS2-3530ARH-8 -55 to +125 5962F9568701VGA HS2-3530ARH-Q -55 to +125 5962F9568702VGA HS2-3530AEH-Q 5962F9568701VXC HS9-3530ARH-Q OFFSET NULL HS9-3530ARH, HS9-3530AEH(FLATPACK), CDFP3-F10 TOP VIEW NC 1 10 ISET OFFSET 2 9 V+ -55 to +125 - IN 3 8 OUTPUT -55 to +125 + IN 4 7 OFFSET V- 5 6 NC 5962F9568702VXC HS9-3530AEH-Q -55 to +125 5962F9568701V9A HS0-3530ARH-Q -55 to +125 5962F9568702V9A HS0-3530AEH-Q -55 to +125 HS2-3530ARH/PROTO HS2-3530ARH/Proto -55 to +125 HS9-3530ARH/PROTO HS9-3530ARH/Proto -55 to +125 1 OUTPUT V- 5962F9568701QGA December 12, 2012 FN4653.1 V+ CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas Inc. 1999, 2012. All Rights Reserved Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries. All other trademarks mentioned are the property of their respective owners. HS-3530ARH, HS-3530AEH Die Characteristics ASSEMBLY RELATED INFORMATION SUBSTRATE POTENTIAL: DIE DIMENSIONS: Unbiased (DI) 1720µm x 1390µm x 533µm ±25.4µm (68 mils x 55 mils x 21 mils ±1 mil) ADDITIONAL INFORMATION INTERFACE MATERIALS WORST CASE CURRENT DENSITY: GLASSIVATION <2.0 x 105 A/cm2 Type: Silox (SiO2) Thickness: 8.0kA ±1.0kA TRANSISTOR COUNT: 49 TOP METALLIZATION Type: AlSiCu Thickness: 16.0kA ±2kA SUBSTRATE: Radiation Hardened Silicon Gate, Dielectric Isolation BACKSIDE FINISH: Silicon Metallization Mask Layout Pin Numbers shown are for the Can Package HS-3530ARH, HS-3530AEH IN+ (3) IN(2) OFFSET (1) NC V- (4) NC ISET (8) NC OFFSET (5) OUTPUT (6) NC V+ (7) For additional products, see www.intersil.com/product_tree Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted in the quality certifications found at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 2 FN4653.1 December 12, 2012