INTEGRATED CIRCUITS DATA SHEET TDA8569Q 4 × 40 W BTL quad car radio power amplifier Product specification Supersedes data of 1997 Mar 27 2003 Aug 08 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio power amplifier TDA8569Q FEATURES • Electrostatic discharge protection • Capable of driving 2 Ω loads • No switch-on/switch-off plop • Requires very few external components • Flexible leads • High output power • Low thermal resistance • Low output offset voltage • Pin compatible with the TDA8567Q. • Fixed gain GENERAL DESCRIPTION • Diagnostic facility (distortion, short-circuit and temperature pre-warning) The TDA8569Q is an integrated class-B output amplifier in a 23-lead Single-In-Line (SIL) plastic power package. It contains four amplifiers in Bridge-Tied Load (BTL) configuration, each with a gain of 26 dB. The output power is 4 × 40 W in a 2 Ω load. • Good ripple rejection • Mode select switch (operating, mute and standby) • Load dump protection • Short-circuit safe to ground, to VP and across the load • Low power dissipation in any short-circuit condition APPLICATIONS • Thermally protected • The device is developed primarily for car radio applications. • Reverse polarity safe QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VP operating supply voltage 6 14.4 18 V IORM repetitive peak output current − − 7.5 A Iq(tot) total quiescent current − 230 − mA Istb standby current − 0.2 10 µA Isw switch-on current − − 80 µA Zi input impedance 25 30 − kΩ Po output power THD = 10% − 40 − W SVRR supply voltage ripple rejection Rs = 0 Ω − 60 − dB αcs channel separation Rs = 10 kΩ − 55 − dB Gv closed loop voltage gain 25 26 27 dB Vn(o) noise output voltage − − 120 µV Rs = 0 Ω ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION TDA8569Q DBS23P plastic DIL-bent-SIL power package; 23 leads (straight lead length 3.2 mm) SOT411-1 2003 Aug 08 2 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio power amplifier TDA8569Q BLOCK DIAGRAM handbook, full pagewidth IN1 MODE VP1 VP2 15 1 8 10 VP3 VP4 16 23 + 2 − OUT1+ 30 kΩ + 4 − IN2 OUT1− Vref 11 + 7 − OUT2+ 30 kΩ + SGND 12 TDA8569Q IN3 5 − 13 DIAGNOSTIC + 9 17 − OUT2− VDIAG OUT3+ 30 kΩ + 19 − IN4 OUT3− Vref 14 + 22 − OUT4+ 30 kΩ + 20 − 3 PGND1 6 PGND2 18 21 PGND3 PGND4 Fig.1 Block diagram. 2003 Aug 08 3 OUT4− MBK010 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio power amplifier TDA8569Q PINNING SYMBOL PIN DESCRIPTION VP1 1 supply voltage 1 OUT1+ 2 output 1+ PGND1 3 handbook, halfpage VP1 1 power ground 1 OUT1+ 2 OUT1− 4 output 1− PGND1 3 OUT2− 5 output 2− OUT1− 4 PGND2 6 power ground 2 OUT2− 5 OUT2+ 7 output 2+ VP2 8 supply voltage 2 PGND2 6 VDIAG 9 diagnostic output OUT2+ 7 IN1 10 input 1 VP2 8 IN2 11 input 2 VDIAG 9 SGND 12 signal ground IN1 10 IN3 13 input 3 IN2 11 IN4 14 input 4 MODE 15 mode select switch input VP3 16 supply voltage 3 OUT3+ 17 output 3+ PGND3 18 power ground 3 OUT3− 19 output 3− VP3 16 OUT4− 20 output 4− OUT3+ 17 PGND4 21 power ground 4 PGND3 18 OUT4+ 22 output 4+ VP4 23 supply voltage 4 SGND 12 TDA8569Q IN3 13 IN4 14 MODE 15 OUT3− 19 OUT4− 20 PGND4 21 OUT4+ 22 VP4 23 MBK009 Fig.2 Pin configuration. 2003 Aug 08 4 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio power amplifier TDA8569Q FUNCTIONAL DESCRIPTION SHORT-CIRCUIT DIAGNOSTIC The TDA8569Q contains four identical amplifiers which can be used for bridge applications. The gain of each amplifier is fixed at 26 dB. When a short-circuit occurs at one or more outputs to ground or to the supply voltage, the output stages are switched off until the short-circuit is removed and the device is switched on again, with a delay of approximately 10 ms after removal of the short-circuit. During this short-circuit condition, pin VDIAG is continuously LOW. Mode select switch (pin MODE) • Standby: low supply current (<100 µA) When a short-circuit occurs across the load of one or more channels, the output stages are switched off for approximately 10 ms. After that time it is checked during approximately 50 µs to determine whether the short-circuit is still present. Due to this duty cycle of 50 µs/10 ms the average current consumption during this short-circuit condition is very low. • Mute: input signal suppressed • Operating: normal on condition. Since this pin has a low input current (<80 µA), a low cost supply switch can be applied. To avoid switch-on plops, it is advised to keep the amplifier in the mute mode during ≥150 ms (charging of the input capacitors at pins IN1, IN2, IN3 and IN4). During this short-circuit condition, pin VDIAG is LOW for 10 ms and HIGH for 50 µs (see Fig.5). The protection circuits of all channels are coupled. This means that if a short-circuit condition occurs in one of the channels, all channels are switched off. Consequently, the power dissipation in any short-circuit condition is very low. This can be realized by: • Microprocessor control • External timing circuit (see Fig.3). Diagnostic output (pin VDIAG) TEMPERATURE PRE-WARNING DYNAMIC DISTORTION DETECTOR (DDD) When the virtual junction temperature Tvj reaches 145 °C, pin VDIAG goes LOW. At the onset of clipping of one or more output stages, the dynamic distortion detector becomes active and pin VDIAG goes LOW. This information can be used to drive a sound processor or DC volume control to attenuate the input signal and so limit the distortion. The output level of pin VDIAG is independent of the number of channels that are clipping (see Fig.4). handbook, halfpage OPEN COLLECTOR OUTPUTS The diagnostic pin has an open-collector output, so more devices can be tied together. An external pull-up resistor is needed. VP handbook, halfpage Vo 10 kΩ 47 µF 100 Ω 0 mode select switch VDIAG VP 100 kΩ 0 MGA708 Fig.3 Mode select switch circuitry. 2003 Aug 08 MCE461 t Fig.4 Distortion detector waveform. 5 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio power amplifier TDA8569Q handbook, full pagewidthshort MCE451 circuit current t short-circuit over the load VDIAG 10 ms VP t 50 µs Fig.5 Short-circuit waveform. 2003 Aug 08 6 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio power amplifier TDA8569Q LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VP PARAMETER CONDITIONS supply voltage MIN. MAX. UNIT operating − 18 V non-operating − 30 V load dump protection; during 50 ms; tr ≥ 2.5 ms − 45 V Vsc(safe) short-circuit safe voltage − 18 V Vrp reverse polarity voltage − 6 V IOSM non-repetitive peak output current − 10 A IORM repetitive peak output current − 7.5 A Ptot total power dissipation − 60 W Tstg storage temperature −55 +150 °C Tamb ambient temperature −40 +85 °C Tvj virtual junction temperature − 150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth(j-a) thermal resistance from junction to ambient in free air 40 K/W Rth(j-c) thermal resistance from junction to case (see Fig.6) 1 K/W virtual junction handbook, halfpage OUT1 3.2 K/W OUT2 OUT3 3.2 K/W 3.2 K/W OUT4 3.2 K/W 0.2 K/W case MGG157 Fig.6 Equivalent thermal resistance network. 2003 Aug 08 7 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio power amplifier TDA8569Q DC CHARACTERISTICS VP = 14.4 V; Tamb = 25 °C; measured in Fig.7; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply VP supply voltage note 1 6 14.4 18 V Iq(tot) total quiescent current RL = ∞ − 230 360 mA 8.5 − VP V Operating condition VMODE mode select switch level IMODE mode select switch current VMODE = 14.4 V − 30 80 µA VO output voltage note 2 − 7.0 − V VOS output offset voltage − − 150 mV 3.3 − 6.4 V − 7.0 − V − − 100 mV − − 100 mV Mute condition VMODE mode select switch level VO output voltage VOS output offset voltage ∆VOS change of output offset voltage note 2 switching between mute and operating Standby condition VMODE mode select switch level 0 − 2 V Istb standby current − 0.2 10 µA Diagnostic VDIAG diagnostic output voltage during any fault condition − − 0.6 V Tvj temperature pre-warning VDIAG = 0.6 V − 145 − °C Notes 1. The circuit is DC adjusted at VP = 6 to 18 V and AC operating at VP = 8.5 to 18 V. 2. At VP = 18 to 30 V the DC output voltage ≤ 1⁄2VP. 2003 Aug 08 8 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio power amplifier TDA8569Q AC CHARACTERISTICS VP = 14.4 V; RL = 2 Ω; f = 1 kHz; Tamb = 25 °C; measured in the circuit of Fig.7; unless otherwise specified. SYMBOL Po THD PARAMETER output power total harmonic distortion CONDITIONS MIN. TYP. MAX. UNIT THD = 0.5% 25 30 − W THD = 10% 33 40 − W VP = 13.2 V; THD = 0.5% − 25 − W VP = 13.2 V; THD = 10% − 35 − W Po = 1 W − 0.1 − % VDIAG ≤ 0.6 V; note 1 − 10 − % Bp power bandwidth THD = 0.5%; Po = −1 dB with respect to 16 W − 20 to 20000 − Hz fro(l) low frequency roll-off at −1 dB; note 2 − 25 − Hz fro(h) high frequency roll-off at −1 dB 20 − − kHz Gv closed loop voltage gain 25 26 27 dB SVRR supply voltage ripple rejection on; note 3 50 60 − dB mute; note 3 50 60 − dB standby; note 3 80 90 − dB 25 30 38 kΩ on; note 4 − 85 120 µV on; note 5 − 100 − µV Zi input impedance Vn(o) noise output voltage mute; note 6 − 60 − µV note 7 45 55 − dB − − 1 dB − − 2 mV − 19 − W − 25 − W αcs channel separation ∆Gv channel unbalance Vo output signal in mute note 8 Po output power THD = 0.5%; RL = 4 Ω THD = 10%; RL = 4 Ω Po(EIAJ) EIAJ output power THD = maximum; square wave input; Vi = 2 V (p-p) − 40 − W THD total harmonic distortion Po = 1 W; RL = 4 Ω − 0.05 − % Notes 1. Dynamic Distortion Detector (DDD) active, pin VDIAG is set to logic 0. 2. Frequency response externally fixed. 3. Vripple = Vripple(max) = 2 V (p-p); Rs = 0 Ω. 4. B = 20 Hz to 20 kHz; Rs = 0 Ω. 5. B = 20 Hz to 20 kHz; Rs = 10 kΩ. 6. B = 20 Hz to 20 kHz; independent of Rs. 7. Po = 25 W; Rs = 10 kΩ. 8. Vi = Vi(max) = 1 V (RMS). 2003 Aug 08 9 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio power amplifier TDA8569Q TEST AND APPLICATION INFORMATION VP handbook, full pagewidth +14.4 V MODE 15 IN1 input 1 VP1 VP2 VP3 VP4 1 8 16 23 10 + 470 nF 100 nF 2 4700 µF OUT1+ − RL = 2 Ω 30 kΩ + 4 OUT1− 7 OUT2+ − IN2 input 2 Vref 11 + 470 nF − RL = 2 Ω 30 kΩ + SGND 12 input 3 OUT2− 9 VDIAG 17 OUT3+ 10 kΩ TDA8569Q IN3 5 − 13 DIAGNOSTIC + 470 nF +VP diagnostic output − RL = 2 Ω 30 kΩ + 19 OUT3− 22 OUT4+ − IN4 input 4 Vref 14 + 470 nF − RL = 2 Ω 30 kΩ + 20 OUT4− − 3 6 18 21 PGND1 PGND2 PGND3 PGND4 power ground (substrate) MBK011 Special care must be taken in the PCB-layout to separate pin VDIAG from the pins IN1, IN2, IN3 and IN4 to minimize the crosstalk between the clip output and the inputs. To avoid switch-on plops, it is advised to keep the amplifier in the mute mode for a period of ≥150 ms (charging the input capacitors at pins IN1, IN2, IN3 and IN4). Fig.7 Application circuit diagram. 2003 Aug 08 10 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio power amplifier TDA8569Q Test information Figures 8 to 15 have the following conditions: VP = 14.4 V; f = 1 kHz; 80 kHz filter used; unless otherwise specified. MGD921 300 MCE460 10 handbook, halfpage handbook, halfpage IP (mA) THD+N (%) 200 1 100 10−1 (1) (2) 10−2 10 0 0 4 8 12 16 VP (V) 20 102 103 104 f (Hz) 105 RL = 2 Ω. (1) Po = 10 W. (2) Po = 1 W. RL = ∞. Fig.8 IP as a function of VP. Fig.9 THD + N as a function of frequency. MCE450 102 handbook, halfpage MCE449 60 handbook, halfpage Po (W) THD+N (%) 10 40 (1) 1 (2) (1) 20 10−1 (2) (3) 10−2 10−1 1 10 Po (W) 0 102 10 RL = 2 Ω. (1) f = 10 kHz. (2) f = 1 kHz. (3) f = 100 Hz. 14 VP (V) RL = 2 Ω. (1) THD = 10%. (2) THD = 0.5%. Fig.10 THD + N as a function of Po. 2003 Aug 08 12 Fig.11 Po as a function of VP. 11 16 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio power amplifier TDA8569Q MBK008 10 MGD922 60 handbook, halfpage handbook, halfpage THD+N (%) Po (W) 1 40 (1) (1) (2) 10−1 20 (3) (2) (3) 10−2 10−2 10−1 1 10 Po (W) 0 102 8 RL = 4 Ω. (1) f = 10 kHz. (2) f = 1 kHz. (3) f = 100 Hz. 10 12 14 16 VP (V) 18 RL = 4 Ω. (1) EIAJ. (2) THD = 10%. (3) THD = 0.5%. Fig.12 THD + N as a function of Po. Fig.13 Po as a function of VP. MGD925 −30 MGD926 −30 handbook, halfpage handbook, halfpage SVRR (dB) αcs (dB) −50 −50 −70 −70 (1) (2) −90 10 102 103 104 f (Hz) −90 10 105 102 103 104 f (Hz) RL = 4 Ω. (1) channel 1 ⇔ channel 2, channel 3 ⇔ channel 4. (2) channels 1 and 2 ⇔ channels 3 and 4. RL = 4 Ω. Fig.15 Channel separation as a function of frequency. Fig.14 SVRR as a function of frequency. 2003 Aug 08 12 105 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio power amplifier TDA8569Q PCB layout 111.76 handbook, full pagewidth 78.74 Pgnd 100 nF 2200 µF − VP − − out 4 out1 + + 470 nF 470 nF − − out2 out 3 + + 10 kΩ diag in 1 in sgnd 2 3 mode 4 MGK079 Dimensions in mm. Fig.16 PCB layout (component side). 2003 Aug 08 13 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio power amplifier TDA8569Q 111.76 handbook, full pagewidth 78.74 Pgnd 100 nF 2200 µF − VP − − out 4 out1 + + 470 nF 470 nF − − out2 out 3 + mode in 4 in sgnd 3 2 diag 10 kΩ 1 MGK080 Dimensions in mm. Fig.17 PCB layout (soldering side). 2003 Aug 08 + 14 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio power amplifier TDA8569Q PACKAGE OUTLINE DBS23P: plastic DIL-bent-SIL power package; 23 leads (straight lead length 3.2 mm) SOT411-1 non-concave Dh x D Eh view B: mounting base side A2 d A5 A4 β E2 B j E E1 L2 L3 L1 L 1 e1 Z e 0 5 v M e2 m w M bp c Q 23 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A 2 mm A4 A5 bp c D (1) d D h E (1) e e1 e2 12.2 4.6 1.15 1.65 0.75 0.55 30.4 28.0 12 2.54 1.27 5.08 11.8 4.3 0.85 1.35 0.60 0.35 29.9 27.5 Eh E1 E2 j L 6 10.15 6.2 1.85 3.6 9.85 5.8 1.65 2.8 L1 L2 L3 m Q v w x β Z (1) 14 10.7 2.4 1.43 2.1 4.3 0.6 0.25 0.03 45° 13 9.9 1.6 0.78 1.8 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC JEITA ISSUE DATE 98-02-20 02-04-24 SOT411-1 2003 Aug 08 EUROPEAN PROJECTION 15 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio power amplifier TDA8569Q The total contact time of successive solder waves must not exceed 5 seconds. SOLDERING Introduction to soldering through-hole mount packages The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. This text gives a brief insight to wave, dip and manual soldering. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). Wave soldering is the preferred method for mounting of through-hole mount IC packages on a printed-circuit board. Manual soldering Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. Soldering by dipping or by solder wave Driven by legislation and environmental forces the worldwide use of lead-free solder pastes is increasing. Typical dwell time of the leads in the wave ranges from 3 to 4 seconds at 250 °C or 265 °C, depending on solder material applied, SnPb or Pb-free respectively. Suitability of through-hole mount IC packages for dipping and wave soldering methods SOLDERING METHOD PACKAGE DIPPING DBS, DIP, HDIP, SDIP, SIL WAVE suitable(1) suitable Note 1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. 2003 Aug 08 16 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio power amplifier TDA8569Q DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Aug 08 17 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 753503/02/pp18 Date of release: 2003 Aug 08 Document order number: 9397 750 11575