INTERSIL 12103D226KAT2A

Dual 15A/Single 30A Step-Down Power Module
ISL8225M
Features
The ISL8225M is a fully-encapsulated step-down switching
power supply that can deliver up to 100W output power from a
small 17mm square PCB footprint. The two 15A outputs may
be used independently or combined to deliver a single 30A
output. Designing a high-performance board-mounted power
supply has never been simpler -- only a few external
components are needed to create a very dense and reliable
power solution.
• Fully-encapsulated dual step-down switching power supply
Automatic current sharing and phase interleaving allow up to
six modules to be paralleled for 180A output capability. 1.5%
output voltage accuracy, differential remote voltage sensing
and fast transient response create a very high-performance
power system. Built-in output over-voltage, over-current and
over-temperature protection enhance system reliability.
The ISL8225M is available in a thermally-enhanced QFN
package. Excellent efficiency and low thermal resistance
permit full power operation without heat sinks or fans. In
addition, the QFN package with external leads permits easy
probing and visual solder inspection.
• Up to 100W output from a 17mm square PCB footprint
• Dual 15A or single 30A output
• Up to 95% conversion efficiency
• 4.5V to 20V input voltage range
• 0.6V to 6V output voltage range
• 1.5% output voltage accuracy with differential remote
sensing
• Up to six modules may be paralleled to support 180A output
current
• Output over-voltage, over-current and over-temperature
protection
• Full power operation without heat sinks or fans
• QFN package with exposed leads permits easy probing and
visual solder inspection
Related Resources
Applications
• See AN1789 “ISL8225MEVAL2Z 6-Phase, 90A Evaluation
Board Setup Procedure”
• Computing, networking and telecom infrastructure
equipment
• See AN1790 “ISL8225MEVAL3Z 30A, Single Output
Evaluation Board Setup Procedure”
• Industrial and medical equipment
• See AN1793, “ISL8225MEVAL4Z Dual 15A/Optional 30A
Cascadable Evaluation Board”
• General purpose point-of-load (POL) power
• See ISL8225M 110A Thermal Performance Video
VIN
4.5V TO 20V
VIN1
VIN2
4x22µF
VSEN1+
EN/FF1
OFF ON
VSEN1-
EN/FF2
VSEN2-
ISL8225M
PGND
SGND
MODE
17m
m
17
mm
1kΩ
RSET
1kΩ
5x100µF
7.5mm
VMON1
VMON2
VCC
4.7µF
1.2V@30A
VOUT
VOUT1
VOUT2
COMP1
COMP2
470pF
NOTE: ALL PINS NOT SHOWN ARE FLOATING.
FIGURE 1. COMPLETE 30A STEP-DOWN POWER SUPPLY
December 3, 2012
FN7822.0
1
FIGURE 2. SMALL FOOTPRINT WITH HIGH POWER DENSITY
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas Inc. 2012. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
ISL8225M
Pinout Internal Circuit
VCC
7
FILTER
2.2µF
14
VIN1
15
EN/FF1
12
PHASE1
23
VOUT1
13
PGND
22
VSEN1+
21
VSEN1-
18
VMON1
20
COMP1
8
VIN2
16
EN/FF2
10
PHASE2
25
VOUT2
9
PGND
+
26
VSEN2+
-
1
VSEN2-
4
VMON2
2
COMP2
LDO
PGOOD
SOFT-START
AND FAULT
LOGIC
UGATE1
24
GATE
DRIVER
CLKOUT
17
ISHARE
19
Q1
L1
LGATE1
0.32µH
Q2
CURRENT
SENSING/
SHARING
10kΩ
ISEN1B
ISEN1A
+
MODE
DIFF
AMP1
3
-
ZCOMP1
-
5
INTERNAL
REFERENCE
ERROR
AMP1
+
SYNC
ZCOMP2
SOFT-START
AND FAULT
LOGIC
UGATE2
GATE
DRIVER
Q3
L2
0.32µH
LGATE2
Q4
CURRENT ISEN2B
SENSING/
SHARING ISEN2A
DIFF
AMP2
6
ZCOMP3
ZCOMP4
-
INTERNAL
REFERENCE
2
ERROR
AMP2
7.5kΩ
MODE
+
SGND
FN7822.0
December 3, 2012
ISL8225M
Ordering Information
PART NUMBER
(Notes 2, 3)
PART
MARKING
TEMP. RANGE (°C)
(Note 4)
PACKAGE
(Pb-Free)
PKG.
DWG. #
ISL8225MIRZ
ISL8225M
-40 to +125
26 Ld QFN
L26.17x17
ISL8225MIRZ-T
(Note 1)
ISL8225M
-40 to +125
26 Ld QFN
(Tape & Reel)
L26.17x17
NOTES:
1. Please refer to TB347 for details on reel specifications.
2. These products do contain Pb but they are RoHs compliant by EU exemption 5 (Pb in glass of cathode ray tubes, electronic components, and
fluorescent tubes).
3. For Moisture Sensitivity Level (MSL), please see device information page for ISL8225M. For more information on MSL, please see tech brief TB363
4. The ISL8225M is guaranteed over the full -40°C to +125°C internal junction temperature range. Note that the allowed ambient temperature
consistent with these specifications is determined by specific operating conditions, including board layout, cooling scheme and other environmental
factors.
3
FN7822.0
December 3, 2012
ISL8225M
Pin Configuration
VIN2
VCC
SGND
SYNC
VMON2
MODE
COMP2
9
8
7
6
5
4
3
2
PIN 1
1
VSEN2-
26
VSEN2+
25
VOUT2
24
PGOOD
23
VOUT1
22
VSEN1+
21
VSEN1-
4
13
14
15
16
17
18
19
20
VMON1
ISHARE
COMP1
12
CLKOUT
PHASE1
EN/FF2
11
EN/FF1
N/C
VIN1
10
PGND
PHASE2
PGND
ISL8225M
(26 LD QFN)
TOP VIEW
FN7822.0
December 3, 2012
ISL8225M
Pin Descriptions
PIN
NUMBER
PIN
NAME
TYPE
21, 1
VSEN1-, VSEN2-
I
20, 2
COMP1, COMP2 I/O Error amplifier outputs. Typically floating for dual-output use. For parallel use, a 470pF~1nF capacitor is recommended
on the COMP pins of each SLAVE phase to eliminate the coupling noise. All COMP pins of SLAVE phases need to tie to
MASTER phase COMP1 pin (first phase). Internal compensation networks are implemented for working in the full range
of I/O conditions.
3
18, 4
MODE
I
PIN DESCRIPTION
Output voltage negative feedback. Negative input of the differential remote sense for the regulator. Connect to the
negative rail or ground of the load/processor, as shown in Figure 19. The negative feedback pins can be used to
program the module operation conditions. See Table 3 and Table 5 for details.
Mode setting. Typically floating for dual-output use; tie to SGND for parallel use. See Table 3 and Table 5 for details.
When VSEN2- is pulled within 700mV of VCC, the 2nd channel’s remote sensing amplifier is disabled. The MODE pin,
as well as the VSEN2+ pin, determine relative phase-shift between the two channels and the CLKOUT signal output.
VMON1, VMON2 I/O Remote sensing amplifier outputs. These pins are connected internally to OV/UV/PGOOD comparators, so they can’t
be floated when the module works in multi-phase operation. When VSEN1-, VSEN2- are pulled within 700mV of VCC,
the corresponding remote sensing amplifier is disabled; the output (VMON pin) is in high impedance. In this event, the
VMON pins can be used as an additional monitor of the output voltage, with a resistor divider to protect the system
against single point of failure. The default setting voltage is 0.6V. See Table 3 for details.
5
SYNC
6
SGND
7
VCC
14, 8
VIN1, VIN2
9, 13
PGND
12, 10
PHASE1,
PHASE2
I
Signal synchronization. An optional external resistor (RSYNC) connected from this pin to SGND increases oscillator
switching frequency (Figure 31 and Table 1). The internal default frequency is 500kHz with this pin floating. Also, the
internal oscillator can lock to an external frequency source or the CLKOUT signal from another ISL8225M. Input voltage
range for external source: 3V to 5V square wave. No capacitor is recommended on this pin.
PWR Control signal ground. Connect to PGND under the module in the quiet inner layer. Make sure to have the single location
for the connection between SGND and PGND to avoid noise coupling. See “Layout Guide” on page 23.
PWR 5V internal linear regulator output. Voltage range: 3V to 5.6V. The decoupling ceramic capacitor for the VCC pin is
recommended to be 4.7µF.
PWR Power inputs. Input voltage range: 4.5V to 20V. Tie directly to the input rail. VIN1 provides power to the internal linear
drive circuitry. When the input is 4.5V to 5.5V, VIN should be tied directly to VCC.
PWR Power ground. Power ground pins for both input and output returns.
PWR Phase node. Use for monitoring switching frequency. Phase pins should be floating or used for snubber connections.To
achieve better thermal performance, the phase planes can also be used for heat removal with thermal vias connected
to large inner layers. See “Layout Guide” on page 23.
11
NC
15, 16
EN/FF1,
EN/FF2
I/O Enable and feed-forward control. Tie a resistor divider to VIN or use the system enable signal for this pin. The voltage
turn-on threshold is 0.8V. With a voltage lower than the threshold, the corresponding channel can be disabled
independently. By connecting to VIN with a resistor divider, the input voltage can be monitored for UVLO (under-voltage
lockout) function. The voltage on each EN/FF pin is also used to adjust the internal control loop gain independently to
realize the feed-forward function. Please set the EN/FF between 1.25V to 5V. A 1nF capacitor is recommended on each
EN/FF pin. Please see Table 1 to select resistor divider and application details in “EN/FF Turn ON/OFF” on page 19.
17
CLKOUT
I/O Clock out. Provide the clock signal for the input synchronization signal of other ISL8225Ms. Typically tied to VCC for
dual-output use with 180° phase-shift. See Table 3 and Table 5 when using more than one ISL8225M. When the
module is in dual-output mode, the clock-out signal is disabled. By programming the voltage level of this CLKOUT pin,
the module can work for DDR/tracking or as two independent outputs with selectable phase-shift. See Table 6.
19
ISHARE
O
Current sharing control. Tie all ISHARE pins together when multiple modules are configured for current sharing and
share a common current output. The ISHARE voltage represents the average current of all active and connected
channels. A 470pF capacitor is recommended for each ISHARE pin for multiple phase applications. Typically, the
ISHARE pin should be floating for dual-output or single module application.
22, 26
VSEN1+,
VSEN2+
I
Output voltage positive feedback. Positive inputs of differential remote sense for the regulator. A resistor divider can
be connected to this pin to program the output voltage. It is recommended to put the resistor divider close to the
module and connect the kelvin sensing traces of VOUT and VSEN- to the sensing points of the load/processor; see
Figure 19. The VSEN2+ pin can be used to program the module operation conditions. See Table 3 and Table 5 for
details.
23, 25
24
-
Non-connection pin. This pin is floating with no connection inside.
VOUT1, VOUT2 PWR Power Output. Apply output load between these pins and PGND pins. Output voltage range: 0.6V to 6V.
PGOOD
O
Power good. Provide open-drain power-good signal when the output is within 9% of the nominal output regulation point
with 4% hysteresis (13%/9%) and soft-start complete. PGOOD monitors the outputs (VMON) of the internal differential
amplifiers.
5
FN7822.0
December 3, 2012
ISL8225M
Absolute Maximum Ratings
Thermal Information
Input Voltage, VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +25V
Driver Bias Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +6.5V
Phase Voltage, VPHASE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +30V
Input, Output or I/O Control Voltage . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V
ESD Rating
Human Body Model (Tested per JESD22-A114E) . . . . . . . . . . . . . . . . 2kV
Machine Model (Tested per JESD22-A115-A) . . . . . . . . . . . . . . . . . 200V
Charge Device Model (Tested per JESD22-C101C). . . . . . . . . . . . . . . 1kV
Latch-up (Tested per JESD-78B; Class 2, Level A) . . . . . . . . . . . . . . 100mA
Thermal Resistance (Typical)
θJA (°C/W) θJC (°C/W)
QFN Package (Notes 5, 6) . . . . . . . . . . . . . .
10.0
0.9
Maximum Storage Temperature Range . . . . . . . . . . . . . .-40°C to +150°C
Pb-free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . Refer to Figure 41
Recommended Operating Conditions
Input Voltage, VIN1 and VIN2 . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V to 20.0V
Output Voltage, VOUT1 and VOUT2 . . . . . . . . . . . . . . . . . . . . . . . 0.6V to 6.0V
Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . .-40°C to +125°C
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
5. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech
Brief TB379.
6. For θJC, the “case temp” location is the center of the phase exposed metal pad on the package underside.
Electrical Specifications
range, -40°C to +125°C (Note 4).
PARAMETER
TA = +25°C, VIN = 12V, unless otherwise noted. Boldface limits apply over the internal junction temperature
SYMBOL
TEST CONDITIONS
MIN
TYP
(Note 7) (Note 8)
MAX
(Note 7)
UNITS
VCC SUPPLY CURRENT
Nominal Supply VIN Current
IQ_VIN
VIN = 20V; No Load; EN1 = EN2 = high
131
mA
VIN1 = 20V; No Load; EN1 = high, EN2 = low
72
mA
VIN2 = 20V; No Load; EN1 = 0, EN2 = high
71
mA
VIN1 = 12V; No Load; EN1 = high, EN2 = high
134
mA
VIN = 4.5V; No Load; EN1 = EN2 = high
136
mA
VIN1 = 4.5V; No Load; EN1 = high, EN2 = low
73
mA
VIN2 = 4.5V; No Load; EN1 = 0, EN2 = high
70
mA
250
mA
1
Ω
INTERNAL LINEAR REGULATOR (Note 9)
Maximum Current
IPVCC
VCC = 4V to 5.6V
Saturated Equivalent Impedance
RLDO
P-Channel MOSFET (VIN = 5V)
VCC Voltage Level
VCC
IVCC = 0mA
5.15
5.4
5.95
V
0°C to +75°C
2.85
2.97
V
-40°C to +85°C
2.85
3.05
V
2.65
2.75
V
POWER-ON RESET (Note 9)
Rising VCC Threshold
Falling VCC Threshold
System Soft-start Delay
tSS_DLY
After PLL and VCC PORs, and EN above their
thresholds
384
Cycles
ENABLE (Note 9)
Turn-On Threshold Voltage
Hysteresis Sink Current
IEN_HYS
Under-voltage Lockout Hysteresis
VEN_HYS
VEN_RTH = 10.6V; VEN_FTH = 9V, RUP = 53.6kΩ,
RDOWN = 5.23kΩ
Sink Current
IEN_SINK
VENFF = 1V
Sink Impedance
REN_SINK
IEN_SINK = 5mA, VENFF = 1V
0.75
0.8
0.86
V
23
30
35
µA
1.6
V
15.4
mA
64
Ω
OSCILLATOR
Oscillator Frequency
fOSC
6
SYNC pin is open
510
kHz
FN7822.0
December 3, 2012
ISL8225M
Electrical Specifications
TA = +25°C, VIN = 12V, unless otherwise noted. Boldface limits apply over the internal junction temperature
range, -40°C to +125°C (Note 4). (Continued)
PARAMETER
SYMBOL
Total Variation (Note 9)
TEST CONDITIONS
VCC = 5V; -40°C < TA < +85°C
MIN
TYP
(Note 7) (Note 8)
-9
MAX
(Note 7)
UNITS
+9
%
1500
kHz
FREQUENCY SYNCHRONIZATION AND PHASE LOCK LOOP (Note 9)
Synchronization Frequency
VCC = 5V
PLL Locking Time
VCC = 5.4V, fSW = 500kHz
Input Signal Duty Cycle Range
150
130
10
µs
90
%
410
ns
PWM (Note 9)
Minimum PWM OFF Time
310
tMIN_OFF
Current Sampling Blanking Time
345
175
tBLANKING
ns
OUTPUT CHARACTERISTICS
Output Continuous Current Range
IOUT(DC)
VIN = 12V, VOUT1 = 1.5V
0
15
A
VIN = 12V, VOUT2 = 1.5V
0
15
A
VIN = 12V, VOUT = 1.5V, in Parallel mode
0
30
A
ΔVOUT/ΔVIN VIN = 4.5V to 20V
Line Regulation Accuracy
VOUT1 = 1.5V, IOUT1 = 0A
0.0065
%
VOUT2 = 1.5V, IOUT2 = 0A
0.0065
%
VOUT1 = 1.5V, IOUT1 = 15A
0.01
%
VOUT2 = 1.5V, IOUT2 = 15A
0.01
%
VIN = 4.5V to 20V
ΔVOUT/VOUT VIN = 12V, 5x22µF, 2x4.7µF ceramic capacitor and
1x330µF POSCAP
Load Regulation Accuracy
ΔVOUT
Output Ripple Voltage
IOUT1 = 0A to 15A, VOUT1 = 1.5V
1
%
IOUT2 = 0A to 15A, VOUT2 = 1.5V
1
%
VIN = 12V, 3x100µF ceramic capacitor and
1x330µF POSCAP
IOUT1 = 0A, VOUT1 = 1.5V
11
mVP-P
IOUT2 = 0A, VOUT2 = 1.5V
11
mVP-P
IOUT1 = 15A, VOUT1 = 1.5V
14
mVP-P
IOUT2 = 15A, VOUT2 = 1.5V
14
mVP-P
IOUT1 = 0A to 7.5A
75
mVP-P
IOUT2 = 0A to 7.5A
75
mVP-P
IOUT1 = 7.5A to 0A
70
mVP-P
IOUT2 = 7.5A to 0A
70
mVP-P
TA = -40°C to +85°C
0.6
V
DYNAMIC CHARACTERISTICS
Voltage Change for Positive Load Step
Voltage Change for Negative Load Step
ΔVOUT-DP
ΔVOUT-DN
Current slew rate = 2.5A/µs
VIN = 12V, VOUT = 1.5V, 2x47µF ceramic capacitor
and 1x330µF POSCAP
Current slew rate = 2.5A/µs
VIN = 12V, VOUT = 1.5V, 2x47µF ceramic capacitor
and 1x330µF POSCAP
REFERENCE (Note 9)
Reference Voltage (Include Error and
Differential Amplifier Offsets)
7
VREF1
-0.7
0.7
%
FN7822.0
December 3, 2012
ISL8225M
Electrical Specifications
TA = +25°C, VIN = 12V, unless otherwise noted. Boldface limits apply over the internal junction temperature
range, -40°C to +125°C (Note 4). (Continued)
PARAMETER
SYMBOL
Reference Voltage (Include Error and
Differential Amplifier Offsets)
VREF2
TEST CONDITIONS
MIN
TYP
(Note 7) (Note 8)
TA = -40°C to +85°C
MAX
(Note 7)
0.6
-0.75
UNITS
V
0.95
%
DIFFERENTIAL AMPLIFIER (Note 9)
DC Gain
UG_DA
Unity Gain Bandwidth
Unity gain amplifier
UGBW_DA
VSEN+ Pin Sourcing Current
0.2
IVSEN+
Maximum Source Current for Current Sharing
Input Impedance
IVSEN1-
RVSEN+_to
_VSEN-
dB
5
MHz
1
2.5
µA
VSEN1- Source Current for Current Sharing when
parallel multiple modules, each of which has its
own voltage loop
350
µA
VVSEN+/IVSEN+, VVSEN+ = 0.6V
-600
kΩ
Output Voltage Swing
Input Common Mode Range
Disable Threshold
0
VVSEN-
VMON1,2 = tri-state
Ilimit1
VIN = 12V, VOUT1 = 1.5V, RSYNC = Open
Ilimit2
VIN = 12V, VOUT2 = 1.5V, RSYNC = Open
0
VCC - 1.8
V
-0.2
VCC - 1.8
V
VCC - 0.4
V
20
A
OVER-CURRENT PROTECTION (Note 9)
Channel Over-current Limit
Share Pin OC Threshold
VOC_SET
VCC = 5V
(comparator offset included)
ΔI/IOUT
VIN = 12V, VOUT = 1.5V
IOUT = 30A, VSEN2- = high
20
1.16
1.20
A
1.22
V
CURRENT SHARE
Current Share Accuracy
±10
%
POWER-GOOD MONITOR (Note 9)
Under-voltage Falling Trip Point
VUVF
Under-voltage Rising Hysteresis
VUVR_HYS
Over-voltage Rising Trip Point
VOVR
Over-voltage Falling Hysteresis
VOVF_HYS
Percentage below reference point
-15
Percentage above UV trip point
Percentage above reference point
-13
-11
4
11
Percentage below OV trip point
13
%
%
15
4
%
%
PGOOD Low Output Voltage
IPGOOD = 2mA
0.35
V
Sinking Impedance
IPGOOD = 2mA
70
Ω
Maximum Sinking Current
VPGOOD < 0.8V
10
mA
OVER-VOLTAGE PROTECTION (Note 9)
OV Latching-up Trip Point
EN/FF = UGATE = LATCH Low, LGATE = High
OV Non-Latching-up Trip Point
EN = Low, UGATE = Low, LGATE = High
LGATE Release Trip Point
EN = Low/HIGH, UGATE = Low, LGATE = Low
118
120
122
%
113
%
87
%
Over-Temperature Trip (Controller Junction
Temperature)
150
°C
Over-Temperature Release Threshold
(Controller Junction Temperature)
125
°C
OVER-TEMPERATURE PROTECTION (Note 9)
NOTES:
7. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design.
8. Parameters with TYP limits are not production tested, unless otherwise specified.
9. Parameters are 100% tested for internal IC prior to module assembly.
8
FN7822.0
December 3, 2012
ISL8225M
Typical Performance Characteristics
Efficiency Performance
TA = +25°C, if not specified, as shown in Figure 18 with 2nd phase disabled. The efficiency equation is
as follows:
P OUT
( V OUT xI OUT )
Output Power
Efficiency = ----------------------------------------- = --------------- = ------------------------------------Input Power
P IN
( V IN xI IN )
100
3.3V
95
100
1.8V
2.5V
90
85
1V
80
1.2V
EFFICIENCY (%)
EFFICIENCY (%)
90
1.5V
75
70
65
85
75
55
4
6
8
10
LOAD CURRENT (A)
12
14
50
16
0
4
100
5V AT 900kHz
90
EFFICIENCY (%)
80
1.8V AT 500kHz
1.5V AT 500kHz
70
1.2V AT 500kHz
65
1V AT 500kHz
60
8
10
12
14
16
1.8VOUT
95
85
75
2.5VOUT
2.5V AT 500kHz
3.3V AT 650kHz
6
FIGURE 4. EFFICIENCY vs LOAD CURRENT (12VIN)
100
90
1.2VOUT
85
1.5VOUT
1VOUT
80
75
55
50
0
2
4
6
8
10
12
14
70
0
16
5
LOAD CURRENT (A)
10
15
20
25
30
LOAD CURRENT (A)
FIGURE 5. EFFICIENCY vs LOAD CURRENT (20VIN)
FIGURE 6. EFFICIENCY vs LOAD CURRENT (PARALLEL SINGLE
OUTPUT, AS SHOWN IN FIGURE 19 AT 5VIN/500kHz)
95
1.8VOUT
2.5VOUT
90
EFFICIENCY (%)
EFFICIENCY (%)
2
LOAD CURRENT (A)
FIGURE 3. EFFICIENCY vs LOAD CURRENT (5VIN AT 500kHz)
95
1.8V AT 500kHz
1V AT 500kHz
65
60
2
1.2V AT 500kHz
70
55
0
1.5V AT 500kHz
80
60
50
2.5V AT 500kHz
3.3V AT 650kHz
5V AT 850kHz
95
85
1.5VOUT
1.2VOUT
80
1VOUT
75
70
65
60
0
5
10
15
20
25
30
LOAD CURRENT (A)
FIGURE 7. EFFICIENCY vs LOAD CURRENT (PARALLEL SINGLE OUTPUT, AS SHOWN IN FIGURE 19 AT 12VIN/500kHz
9
FN7822.0
December 3, 2012
ISL8225M
Typical Performance Characteristics (Continued)
Transient Response Performance
VIN = 12V, COUT = 1x10µF and 3x100µF ceramic capacitors, IOUT = 0A to 7.5A, current
slew rate = 2.5A/µs. TA = +25°C, if not specified, as shown in Figure 18 with 2nd phase disabled.
50mV/DIV
50mV/DIV
50mV/DIV 2A/DIV
2A/DIV
2A/DIV
200µs/DIV
200µs/DIV
200uS/DIV FIGURE 8. 1VOUT TRANSIENT RESPONSE
FIGURE 9. 1.2VOUT TRANSIENT RESPONSE
50mV/DIV
50mV/DIV 50mV/DIV
50mV/DIV
2A/DIV 2A/DIV
2A/DIV
2A/DIV
200µs/DIV
200uS/DIV FIGURE 10. 1.5VOUT TRANSIENT RESPONSE
200µs/DIV
200uS/DIV FIGURE 11. 1.8VOUT TRANSIENT RESPONSE
50mV/DIV
50mV/DIV 100mV/DIV
100mV/DIV
2A/DIV 2A/DIV
2A/DIV
2A/DIV
200µs/DIV
200uS/DIV FIGURE 12. 2.5VOUT TRANSIENT RESPONSE
10
200µs/DIV
200uS/DIV FIGURE 13. 3.3VOUT TRANSIENT RESPONSE
FN7822.0
December 3, 2012
ISL8225M
Typical Performance Characteristics (Continued)
Start-up and Short Circuit Performance
VIN = 12V, VOUT = 1.5V, CIN = 1x 180µF, 2x10µF/Ceramic, COUT = 2x47µF and
1x330µF POSCAP. TA = +25°C, if not specified, as shown in Figure 18 with 2nd phase disabled.
VOUT
Vout VVout OUT
0.5V/DIV
0.5V/DIV 0.5V/DIV
0.5V/DIV IIin IN
IIN
Iin 0.1A/DIV
0.1A/DIV 0.1A/DIV
1A/DIV 1ms/DIV 1ms/DIV
1ms/DIV
1ms/DIV FIGURE 14. START-UP AT 0A
FIGURE 15. START-UP AT 15A
V
Vout
OUT
VVout OUT
0.5V/DIV
0.5V/DIV 0.5V/DIV
0.5V/DIV IIin
IN
IIin IN
0.2A/DIV
0.2A/DIV 0.5A/DIV 0.5A/DIV
100us/DIV 100µs/DIV
FIGURE 16. SHORT CIRCUIT AT 0A
11
100µs/DIV
100us/DIV FIGURE 17. SHORT CIRCUIT AT 15A
FN7822.0
December 3, 2012
ISL8225M
Typical Application Circuits
CIN1
330µF
+
CIN2
4x22µF
8
15
R5*
16
7
R6*
17
C1
4.7µF
3
19
*SEE TABLE 1 ON PAGE 17 FOR R5/R6
VALUES.
5
20
2
VIN1
VOUT1
VIN2
VSEN1+
EN/FF1
VSEN1-
EN/FF2
VOUT2
VCC
VSEN2+
CLKOUT
ISL8225M
VSEN2-
MODE
VMON1
ISHARE
VMON2
SYNC
PHASE1
COMP1
PHASE2
COMP2
6
PGND
14
SGND
4.5V TO 20V
VIN
PGOOD
23
22
21
CFF
(OPTIONAL)
R2*
1kΩ
R1*
1kΩ
COUT1
2x47µF
25
26
1
CFF
(OPTIONAL)
R4*
665Ω
R3*
1kΩ
COUT3
2x47µF
1.2V@15A
VOUT1
+
COUT2
330µF
1.5V@15A
VOUT2
+
COUT4
330µF
18
*SEE TABLE 4 ON PAGE 19, RESISTORS
SET ON VSEN+ AND VSEN- PINS.
4
12
10
24
9
SEE “LAYOUT GUIDE” ON PAGE 23 FOR SHORTING SGND TO PGND
FIGURE 18. DUAL OUTPUTS FOR 1.2V/15A AND 1.5V/15A
CIN1
330µF
+
CIN2
4x22µF
8
15
R3*
16
7
17
R4*
C1
4.7µF
3
19
*SEE TABLE 1 ON PAGE 17 FOR R3/R4
VALUES.
5
20
2
C2
470pF
VIN1
VOUT1
VIN2
VSEN1+
EN/FF1
VSEN1-
EN/FF2
VOUT2
VSEN2+
VCC
CLKOUT
ISL8225M
VSEN2-
MODE
VMON1
ISHARE
VMON2
21
26
1
9
COUT
5x100µF
LOAD
KELVIN REMOTE SENSING LINES
VCC
18
4
12
PHASE2 10
6
R1
1kΩ
R2
665Ω
25
COMP1
PGOOD
VOUT
22
PHASE1
COMP2
1.5V@30A
23
SYNC
PGND
14
SGND
4.5V TO 20V
VIN
24
2Ω
2200pF
SIZE:1210
2Ω
SIZE:1210
2200pF
OPTIONAL SNUBBER FOR NOISE
ATTENUATION. SEE FIGURE 32,
“RECOMMENDED LAYOUT,” ON PAGE 23.
SEE “LAYOUT GUIDE” ON PAGE 23 FOR SHORTING SGND TO PGND
FIGURE 19. PARALLEL USE FOR SINGLE 1.5V/30A OUTPUT
12
FN7822.0
December 3, 2012
ISL8225M
Typical Application Circuits (Continued)
+
CIN1
330µF
14
8
CIN2
4x22µF
R5*
15
16
*SEE TABLE 1 ON PAGE 17 FOR
R5/R6 VALUES.
7
R6*
C1
4.7µF
17
3
VDDQ
19
R7
1kΩ
5
20
R8
324Ω
C2
1nF
2
VIN1
VOUT1
VIN2
VSEN1+
EN/FF1
VSEN1-
EN/FF2
VOUT2
VCC
VSEN2+
CLKOUT
VSEN2-
ISL8225M
MODE
VMON1
ISHARE
VMON2
SYNC
PHASE1
COMP1
PHASE2
COMP2
6
PGND
4.5V TO 20V
SGND
VIN
PGOOD
2.5V
23
22
21
VDDQ
R1
R2 1kΩ
316Ω
1.25V VDDQ/2
VTT
25
26
1
COUT1
3x100µF
R3
R4 1kΩ
931Ω
COUT2
3x100µF
18
4
12
10
24
9
*SET THE CLKOUT VOLTAGE CLOSE TO 0.61V.
SEE DETAILS IN “FUNCTIONAL DESCRIPTION” ON PAGE 20
FIGURE 20. DDR/TRACKING USE
CIN1
330µF
+
8
CIN2
4x22µF
R5
7.15kΩ
15
16
7
R6
2.05kΩ
C1
4.7µF
17
3
19
5
20
R7
88.7kΩ
*SEE FIGURE 31, “RSYNC VS SWITCHING
FREQUENCY,” ON PAGE 22 TO SELECT R7 FOR THE
DESIRED FREQUENCY OPERATION.
2
VIN1
VOUT1
VIN2
VSEN1+
EN/FF1
VSEN1-
EN/FF2
VOUT2
VCC
VSEN2+
CLKOUT
VSEN2-
ISL8225M
MODE
VMON1
ISHARE
VMON2
SYNC
PHASE1
COMP1
PHASE2
COMP2
6
PGND
14
SGND
8V TO 20V
VIN
PGOOD
3.3V@10A
VOUT1
23
22
21
R1
R2 1kΩ
221Ω
5V@10A
VOUT2
25
26
1
COUT1
3x100µF
R3
R4 1kΩ
137Ω
COUT2
3x100µF
18
4
12
*SEE FIGURE 25, “RECOMMENDED
FREQUENCY VS VIN AT VOUT,” ON
PAGE 19 FOR THE FREQUENCY SETTING
FOR I/O CONDITIONS.
10
24
9
FIGURE 21. HIGH OUTPUT VOLTAGE APPLICATION WITH THE FREQUENCY SET AT 900kHz
13
FN7822.0
December 3, 2012
ISL8225M
Typical Application Circuits (Continued)
CIN2
4x22µF
VOUT1
VIN2
VSEN1+
EN/FF1
VSEN1-
EN/FF2
VOUT2
R4*
VCC1
R3*
VSEN2+
VCC
C1
4.7µF
CLKOUT
ISL8225M
1.5V/60A
MASTER PHASE
VOUT1
R1
R2
665Ω
1kΩ
COUT1
4x100µF
SLAVE
VCC1
VSEN2-
MODE
VMON1
ISHARE
VMON2
SYNC
PHASE1
COMP1
PHASE2
COMP2
PGOOD
PGND
*SEE TABLE 1 ON
PAGE 17 FOR R3/R4
VALUES.
VCC
R8
1kΩ
R5
3.3kΩ
PGOOD
C3
470pF
CIN2
4x22µF
VCC2
VIN1
VOUT1
VIN2
VSEN1+
EN/FF1
VSEN1-
EN/FF2
VOUT2
CLKOUT
C2
4.7µF
SLAVE
COUT2
4x100µF
VCC2
SLAVE
VSEN2+
VCC
ISL8225M
VSEN2-
MODE
VMON1
ISHARE
VMON2
R6
1kΩ
C4
470pF
SYNC
PHASE1
COMP1
PHASE2
COMP2
PGOOD
C5
470pF
PGND
+
VIN1
SGND
CIN1
2x470µF
4.5V TO 20V
SGND
VIN
R7
665Ω
R9
1kΩ
FIGURE 22. 4-PHASE PARALLELED AT 1.5V/60A WITH 90° INTERLEAVING
14
FN7822.0
December 3, 2012
ISL8225M
Typical Application Circuits (Continued)
8
CIN1
4x22µF
R4*
*SEE TABLE 1
ON PAGE 17
FOR R3/R4
VALUES.
15
16
VCC1
R3*
C1
4.7µF
7
17
VCC
3
19
5
20
R7
100kΩ
2
8
15
CIN2
4x22µF
16
VCC2
7
17
C3
4.7µF
3
19
5
20
C4
470pF
2
VSEN1+
VIN2
EN/FF1
VSEN1-
EN/FF2
VOUT2
VCC
VSEN2+
CLKOUT
VSEN2-
ISL8225M
MODE
VMON1
ISHARE
VMON2
SYNC
PHASE1
COMP1
PHASE2
COMP2
PGOOD
C2
470pF
14
VOUT1
6
PGND
+
VIN1
VIN1
VOUT1
VIN2
VSEN1+
EN/FF1
VSEN1-
EN/FF2
VOUT2
VCC
VSEN2+
CLKOUT
VSEN2-
ISL8225M
MODE
VMON1
ISHARE
VMON2
SYNC
PHASE1
COMP1
PHASE2
COMP2
PGOOD
6
23
VOUT1
R1
22
21
1.5V/40A
MASTER PHASE
R2 1kΩ
316Ω
25
SLAVE
26
VCC1
COUT1
4x100µF
1
18
VCC1
4
12
10
R6
1kΩ
R5
3.3kΩ
24
PGOOD
9
PGND
2x470µF
14
SGND
4.5V TO 20V
SGND
VIN
23
SLAVE
COUT2
2x100µF
22
21
VCC2
5V/10A
25
26
1
18
4
12
VOUT2
R8
R9 1kΩ
137Ω
COUT3
3x100µF
R10
1kΩ
R11
316Ω
10
24
9
FIGURE 23. 3-PHASE PARALLELED AT 1.5V/40A AND 1-PHASE AT 5V/10A OUTPUT WITH 90° INTERLEAVING
15
FN7822.0
December 3, 2012
ISL8225M
Typical Application Circuits (Continued)
8
15
16
VCC1
R3*
7
C1
4.7µF
EN/FF1
VSEN1- 21
EN/FF2
VOUT2
VCC
17
CLKOUT
3
19
5
ISHARE
VMON2
C8
470pF
8
15
16
7
17
C2
4.7µF
3
19
5
20
2
C3
470pF
14
8
15
16
7
VCC3
17
C5
4.7µF
3
19
5
20
2
C6
470pF
C7
470pF
PHASE2
6
9
PGOOD
VIN1
VOUT1
VIN2
VSEN1+
EN/FF1
VSEN1-
EN/FF2
VOUT2
VCC
VSEN2+
CLKOUT
ISL8225M
VSEN2-
MODE
VMON1
ISHARE
VMON2
SYNC
PHASE1
COMP1
PHASE2
6
9
COMP2
C4
470pF
CIN3
4x22µF
PHASE1
COMP2
14
VSEN2VMON1
COMP1
2
VCC2
ISL8225M
MODE
SYNC
20
CIN2
4x22µF
VSEN2+
PGND
*SEE TABLE 1 ON PAGE 17
FOR R3/R4 VALUES.
VSEN1+
PGND
R4*
VIN2
PGOOD
VIN1
VOUT1
VIN2
VSEN1+
EN/FF1
VSEN1-
EN/FF2
VOUT2
VCC
VSEN2+
CLKOUT
ISL8225M
VSEN2-
MODE
VMON1
ISHARE
VMON2
SYNC
PHASE1
COMP1
PHASE2
COMP2
PGND
CIN1
4x22µF
VOUT1
SGND
+
23
VIN1
SGND
2x470µF
14
SGND
4.5V TO 20V
VIN
6
9
PGOOD
26
VOUT
R1
22
25
1.2V/90A
MASTER PHASE
R2 1kΩ
1kΩ
COUT1
4x100µF
SLAVE
VCC1
1
18
4
VCC1
12
R5
3.3kΩ
10
24
23
22
PGOOD
SLAVE
VCC2
COUT2
4x100µF
21
25
SLAVE
26
1
R6*
18
4
R7*
500Ω
12
10
24
23
22
*KEEP R6/R7 THE SAME
RATIO AS R1/R2. EACH VMON
PIN CAN HAVE SEPERATE
RESISTOR DIVIDER TO
MONITOR THE OUTPUT
VOLTAGE.
SLAVE
VCC3
21
25
500Ω
COUT3
4x100µF
SLAVE
26
1
18
4
12
10
24
FIGURE 24. SIX-PHASE 90A 1.2V OUTPUT CIRCUIT
16
FN7822.0
December 3, 2012
ISL8225M
TABLE 1. ISL8225M DESIGN GUIDE MATRIX (REFER TO FIGURE 18)
VIN VOUT R2 or R4
(Ω)
CASE (V) (V)
CIN1
(BULK)
(NOTE 10)
CIN2
(CERAMIC)
COUT1
(CERAMIC)
COUT2
(BULK)
CFF
(nF)
EN/FF (kΩ)
R5/R6
(NOTE 11)
FREQ.
(kHz)
RSYNC
(kΩ)
LOAD
(A)
(NOTE 12)
1
5
1
1.5k
1x330µF
1x100µF
1x100µF
1x330µF
None
6.04/3.01
500
None
15
2
5
1
1.5k
1x330µF
1x100µF
3x100µF
None
3.3
6.04/3.01
500
None
15
3
12
1
1.5k
1x330µF
2x22µF
1x100µF
1x330µF
None
6.04/1.50
500
None
15
4
12
1
1.5k
1x330µF
2x22µF
3x100µF
None
3.3
6.04/1.50
500
None
15
5
5
1.2
1.0k
1x330µF
1x100µF
1x100µF
1x330µF
None
6.04/3.01
500
None
15
6
5
1.2
1.0k
1x330µF
1x100µF
3x100µF
None
3.3
6.04/3.01
500
None
15
7
12
1.2
1.0k
1x330µF
2x22µF
1x100µF
1x330µF
None
6.04/1.50
500
None
15
8
12
1.2
1.0k
1x330µF
2x22µF
3x100µF
None
3.3
6.04/1.50
500
None
15
9
20
1.2
1.0k
1x330µF
2x22µF
1x100µF
1x330µF
3.3
6.04/1.50
500
None
15
10
20
1.2
1.0k
1x330µF
2x22µF
3x100µF
None
4.7
6.04/1.50
500
None
15
11
5
1.5
665
1x330µF
1x100µF
1x100µF
1x330µF
None
6.04/3.01
500
None
15
12
5
1.5
665
1x330µF
1x100µF
3x100µF
None
3.3
6.04/3.01
500
None
15
13
12
1.5
665
1x330µF
2x22µF
1x100µF
1x330µF
None
6.04/1.50
500
None
15
14
12
1.5
665
1x330µF
2x22µF
3x100µF
None
3.3
6.04/1.50
500
None
15
15
20
1.5
665
1x330µF
2x22µF
1x100µF
1x330µF
None
6.04/1.50
500
None
15
16
20
1.5
665
1x330µF
2x22µF
3x100µF
None
3.3
6.04/1.50
500
None
15
17
5
2.5
316
1x330µF
1x100µF
1x100µF
1x330µF
None
6.04/3.01
500
None
15
18
5
2.5
316
1x330µF
1x100µF
3x100µF
None
3.3
6.04/3.01
500
None
15
19
12
2.5
316
1x330µF
2x22µF
1x100µF
1x330µF
None
6.04/1.50
650
249
15
20
12
2.5
316
1x330µF
2x22µF
3x100µF
None
3.3
6.04/1.50
650
249
15
21
20
2.5
316
1x330µF
2x22µF
1x100µF
1x330µF
None
6.04/1.50
750
147
14
22
20
2.5
316
1x330µF
2x22µF
3x100µF
None
3.3
6.04/1.50
750
147
14
23
5
3.3
221
1x330µF
1x100µF
1x100µF
1x330µF
None
6.04/3.01
500
None
15
24
5
3.3
221
1x330µF
1x100µF
3x100µF
None
None
6.04/3.01
500
None
15
25
12
3.3
221
1x330µF
2x22µF
1x100µF
1x330µF
None
6.04/1.50
800
124
14
26
12
3.3
221
1x330µF
2x22µF
3x100µF
None
None
6.04/1.50
800
124
14
27
20
3.3
221
1x330µF
2x22µF
1x100µF
1x330µF
None
6.04/1.50
850
107
13
28
20
3.3
221
1x330µF
2x22µF
3x100µF
None
3.3
6.04/1.50
850
107
13
29
12
5
137
1x330µF
2x22µF
1x100µF
1x330µF
None
6.04/1.50
950
82.5
12
30
12
5
137
1x330µF
2x22µF
3x100µF
None
None
6.04/1.50
950
82.5
12
31
20
5
137
1x330µF
2x22µF
1x100µF
1x330µF
None
6.04/1.50
950
82.5
10
32
20
5
137
1x330µF
2x22µF
3x100µF
None
3.3
6.04/1.50
950
82.5
10
NOTES:
10. CIN bulk capacitor is optional only for decoupling noise due to the long input cable. CIN2 and COUT1 ceramic capacitors are listed for one phase only.
Please double the capacitor quantity for dual-phase operations.
11. EN/FF resistor divider is tied directly to VIN. The resistors listed here are for two channels' EN/FF pins tied together. If the separate resistor divider is
used for each channel, the resistor value needs to be doubled.
12. MAX load current listed in the table is for conditions at +25°C and no air flow on a typical Intersil 4-layer evaluation board.
17
FN7822.0
December 3, 2012
ISL8225M
TABLE 2. RECOMMENDED I/O CAPACITOR IN TABLE 1
VENDOR
VALUE
PART NUMBER
TDK, Input and Output Ceramic
100µF, 6.3V, 1210
C3225X5R0J107M
Murata, Input and Output Ceramic
100µF, 6.3V, 1210
GRM32ER60J107M
AVX, Input and Output Ceramic
100µF, 6.3V, 1210
12106D107MAT2A
Murata, Input Ceramic
22µF, 25V, 1210
GRM32ER61E226KE15L
Taiyo Yuden, Input Ceramic
22µF, 25V, 1210
TMK325BJ226MM-T
AVX, Input Ceramic
22µF, 25V, 1210
12103D226KAT2A
Sanyo POSCAP, Output Bulk
330µF, 10V
10TPB330M
Panasonic SMT, Input Bulk
330µF, 25V
EEVHA1E331UP
TABLE 3. ISL8225M OPERATION MODES
1ST MODULE (I = INPUT; O = OUTPUT; I/O = INPUT AND OUTPUT, BI-DIRECTION)
MODE
EN1/FF1 EN2/FF2
(I)
(I)
VSEN2(I)
1
0
0
-
2A
0
1
Active
2B
1
0
-
3A
1
1
3B
1
3C
1
MODES OF OPERATION
VMON1
OPERATION OPERATION
CLKOUT/REFIN
OF 2ND 2ND CHANNEL
MODE
MODE
WRT 1ST
OF 3RD
OF 2ND
MODE VSEN2+
VMON2 MODULE WRT 1ST (O)
(I)
(I)
(I OR O)
(Note 14) (Note 14)
(NOTE 13)
MODULE
MODULE
-
OUTPUT
(SEE
DESCRIPTION
FOR DETAILS)
-
-
-
-
-
-
Disabled
-
Active
-
VMON1 =
VMON2 to Keep
PGOOD Valid
-
-
Single Phase
-
-
-
VMON1 =
VMON2 to Keep
PGOOD Valid
-
-
Single Phase
<VCC -0.7V Active Active
29% to 45%
of VCC (I)
Active
-
0°
-
-
Dual Regulator
1
<VCC -0.7V Active Active
45% to 62%
of VCC (I)
Active
-
90°
-
-
Dual Regulator
1
<VCC -0.7V Active Active >62% of VCC (I)
Active
-
180°
-
-
Dual Regulator
<VCC -0.7V Active Active <29% of VCC (I)
-
Active Active
-
-
Active
-
-60°
-
-
DDR Mode
VMON1
or
Divider
-
180°
-
-
2-Phase
60°
Divider
Divider
180°
5B
5B
6-Phase
60°
VMON1
or
Divider
Active
180°
5C
5C
3 Outputs
4
1
1
5A
1
1
VCC
GND
-
60°
5B
1
1
VCC
GND
-
5C
1
1
VCC
GND
-
6
1
1
VCC
VCC
GND
120°
1kΩ
Active
240°
2B
-
3-Phase
7A
1
1
VCC
VCC
VCC
90°
1kΩ
Divider
180°
7A
-
4-Phase
7B
1
1
VCC
VCC
VCC
90°
1kΩ
Active
180°
7B
-
2 Outputs
(1st module in
Mode 7A)
7C
1
1
VCC
VCC
VCC
90°
1kΩ
Active
180°
3, 4
-
3 Outputs
(1st module in
Mode 7A)
8
Cascaded Module Operation MODEs 5B+5B+7A+5B+5B+5B/7A, No External Clock Required
12-Phase
9
External Clock or External Logic Circuits Required for Equal Phase Interval
5, 7, 8, 9, 10, 11,
or
(PHASE >12)
NOTE:
13. “2ND CHANNEL WRT 1ST” means “second channel with respect to first;” in other words, Channel 2 lags Channel 1 by the degrees specified in this
column. For example, 90° means Channel 2 lags Channel 1 by 90°; -60° means Channel 2 leads Channel 1 by 60°.
14. “VMON1” means that the pin is tied to the VMON1 pin of the same module.
“Divider” means that there is a resistor divider from VOUT to SGND; refer to Figure 24.
“1kΩ” means that there is a 1kΩ resistor connecting the pin to SGND; refer to Figure 22.
18
FN7822.0
December 3, 2012
ISL8225M
Application Information
Programming the Output Voltage
The ISL8225M has an internal 0.6V ±0.7% reference voltage.
Programming the output voltage requires a resistor divider (R1
and R2) between the VOUT, VSEN+, and VSEN- pins, as shown in
Figure 18. Please note that the output voltage accuracy is also
dependent on the resistor accuracy of R1 and R2. The user needs
to select a high accuracy resistor (i.e. 0.5%) in order to achieve
the overall output accuracy. The output voltage can be calculated
as shown in Equation 1:
R1
V OUT = 0.6 × ⎛ 1 + --------⎞
⎝
R2⎠
(EQ. 1)
Note: It is recommended to use a 1kΩ value for the top resistor,
R1. The value of the bottom resistor for different output voltages
is shown in Table 4.
At higher output voltage, the inductor ripple increases, which makes
both output ripple and inductor power loss higher. Therefore, it is
recommended to increase the frequency to lower the inductor
ripple. Please refer to Figure 25 for frequency selection at different
operating conditions, then refer to Figure 31 to choose RSYNC.
Selection of Input Capacitor
Selection of the input filter capacitor is based on how much
ripple the supply can tolerate on the DC input line. The larger the
capacitor, the less ripple expected, however, consideration
should be given to the higher surge current during power-up. The
ISL8225M provides a soft-start function that controls and limits
the current surge. The value of the input capacitor can be
calculated as shown in Equation 2:
IO • D ( 1 – D )
C IN ( MIN ) = ---------------------------------V P-P
(EQ. 2)
where:
TABLE 4. VALUE OF BOTTOM RESISTOR FOR DIFFERENT OUTPUT
VOLTAGES (VOUT vs R2)
• CIN(MIN) is the minimum required input capacitance (µF)
• IO is the output current (A)
R1
(Ω)
VOUT
(V)
R2
(Ω)
1k
0.6
Open
• VP-P is the allowable peak-to-peak voltage (V)
1k
0.8
3.01k
1k
1.0
1.50k
1k
1.2
1.00k
1k
1.5
665
1k
1.8
491
1k
2.0
422
In addition to the bulk capacitance, some low Equivalent Series
Resistance (ESR) ceramic capacitance is recommended to
decouple between the VIN and PGND of each channel. See Table 2
for some recommended capacitors. This capacitance reduces
voltage ringing created by the switching current across parasitic
circuit elements. All these ceramic capacitors should be placed as
closely as possible to the module pins. The estimated RMS current
should be considered in choosing ceramic capacitors.
1k
2.5
316
1k
3.3
221
1k
5.0
137
1k
6.0
110
• D is the duty cycle
Io D ( 1 – D )
I IN ( RMS ) = --------------------------------η
Each 10µF X5R or X7R ceramic capacitor is typically good for 2A
to 3A of RMS ripple current. Refer to the capacitor vendor to
check the RMS current ratings. In a typical 15A output
application for one channel, if the duty cycle is 0.5, it needs at
least three 10µF X5R or X7R ceramic input capacitors.
Due to the minimum off-time limit of 410ns, the module has a
maximum output voltage, depending on input voltage. Refer to
Figure 25 for the 5V input voltage limitation.
Selection of Output Capacitors
1100
20VIN
FREQUENCY (kHz)
1000
15VIN
900
12VIN
10VIN
800
700
8VIN
600
500
5VIN
0
1
2
3
The ISL8225M is designed for low-output voltage ripple. The
output voltage ripple and transient requirements can be met with
bulk output capacitors (COUT) that have adequately low ESR.
COUT can be a low ESR tantalum capacitor, a low ESR polymer
capacitor, or a ceramic capacitor. The typical capacitance is
330µF, and decoupled ceramic output capacitors are used for
each phase. See Table 1 and Table 2 for more capacitor
information. Internally optimized loop compensation provides
sufficient stability margins for all ceramic capacitor applications,
with a recommended total value of 300µF per phase. Additional
output filtering may be needed if further reduction of output
ripple or dynamic transient spike is required.
EN/FF Turn ON/OFF
4
VOUT (V)
FIGURE 25. RECOMMENDED FREQUENCY vs VIN AT VOUT
19
(EQ. 3)
5
Each output of the ISL8225M can be turned on/off independently
through the EN/FF pins. For parallel use, tie all EN/FF pins together.
Since this pin has the feed-forward function, the voltage on this pin
can actively adjust the loop gain to be constant for variable input
FN7822.0
December 3, 2012
ISL8225M
voltage. Please refer to Table 1 to select the resistor divider for
commonly used conditions. Otherwise, use the following procedures
to finish the EN/FF design:
1. A resistor divider from VIN to GND is recommended to set the
EN/FF voltage between 1.25V to 5.0V. The resistor divider
ratio is recommended to be between 3/1 to 4/1 (as shown in
Figure 21) with a resistor divider at 7.15kΩ/2.05kΩ.
2. Check EN turn-on hysteresis (Recommend VEN_HYS > 0.3V) :
V EN – HYS = N • R UP • 3x10 – 5
(EQ. 4)
where:
• RUP is the top resistor of the resistor divider
• N is the total number of the EN/FF pins tied to the resistor divider
3. Set the maximum current flowing through the top pull-up
resistor RUP to below 7mA (considering EN/FF is pulled to
ground (VEN/FF = 0)). Refer to Figure 23; a 3.01kΩ/1kΩ
resistor is used to allow for the input voltage from 5V to 20V
operation. In addition, the maximum current flowing through
R5 is 6.6mA (<7mA).
4. If the EN/FF is controlled by system EN signal instead of the
input voltage, we recommend setting the fixed EN/FF voltage
to about 1/3.5 of the input voltage. If the input voltage is 12V,
a 3.3V system EN signal can be tied to EN/FF pin directly.
5. If the input voltage is below 5.5V, it is recommended to have
EN/FF voltage >1.5V to have better stability. The input voltage
can be directly tied to the VCC pin to disable the internal LDO.
6. A 1nF capacitor is recommended on the EN/FF pin to avoid
the noise injecting into the feed-forward loop.
Thermal Considerations
The ISL8225M QFN package offers typical junction to ambient
thermal resistance θJA of approximately 10°C/W at natural
convection (~5.8°C/W at 400LFM) with a typical 4-layer PCB.
Therefore, use Equation 5 to estimate the module junction
temperature:
(EQ. 5)
T junction = P × Θ jA + T ambient
where:
• Tjunction is the module internal maximum temperature (°C)
• Tambient is the system ambient temperature (°C)
• P is the total power loss of the module package (W)
• θJA is the thermal resistance of module junction to ambient
If the calculated temperature, Tjunction, is over the required
design target, the extra cooling scheme is required. Please refer
to “Current Derating” on page 24 for adding air flow.
R
²V
UP
EN_REF
= --------------------------------------------------------------DOWN
V EN_FTH – V EN_REF
V EN_HYS
R UP = ----------------------------I EN_HYS
R
V
–V
EN_FTH
= V
EN_RTH
Functional Description
Initialization
Initially, the Power-On Reset (POR) circuits continuously monitor
bias voltages (VCC) and voltage at the EN/FF pin. The POR
function initiates soft-start operation 384 clock cycles
after: (1) the EN pin voltage is pulled above 0.8V, (2) all input
supplies exceed their POR thresholds, and (3) the PLL locking
time expires. The Enable pin can be used as a voltage monitor
and to set the desired hysteresis, with an internal 30µA sinking
current going through an external resistor divider. The sinking
current is disengaged after the system is enabled. This feature is
specially designed for applications that require higher input rail
POR for better under-voltage protection. For example, in 12V
applications, RUP = 53.6kΩ and RDOWN = 5.23kΩ sets the
turn-on threshold (VEN_RTH) to 10.6V and the turn-off threshold
(VEN_FTH) to 9V, with 1.6V hysteresis (VEN_HYS).
During shutdown or fault conditions, soft-start is quickly reset,
and the gate driver immediately changes state (<100ns) when
input drops below POR.
Enable and Voltage Feed-forward
Voltage applied to the EN/FF pin is fed to adjust the sawtooth
amplitude of the channel. Sawtooth amplitude is set to 1.25 times
the corresponding FF voltage when the module is enabled. This
configuration helps maintain a constant gain. This configuration
also helps maintain input voltage to achieve optimum loop response
over a wide input voltage range.
A 384-cycle delay is added after the system reaches its rising
POR and prior to soft-start. The RC timing at the FF pin should be
small enough to ensure that the input bus reaches its static state
and that the internal ramp circuitry stabilizes before soft-start. A
large RC could cause the internal ramp amplitude not to
synchronize with the input bus voltage during output start-up or
when recovering from faults. A 1nF capacitor is recommended as
a starting value for typical applications.
In a multi-module system, with the EN pins are wired together, all
modules can immediately turn off, at one time, when a fault
condition occurs in one or more modules. A fault pulls the EN pin
low, disabling all modules, and does not create current bounce;
thus, no single channel is overstressed when a fault occurs.
Because the EN pins are pulled down under fault conditions, the
pull-up resistor (RUP) should be scaled to sink no more than 7mA
current from the EN pin. Essentially, the EN pins cannot be
directly connected to VCC.
VIN
RUP
EN
EN_HYS
ON/OFF
RDOWN
384
CLOCK
CYCLES
0.8V
SOFT-START
IEN_HYS = 30µA
OV, OT, OC, AND PLL LOCKING FAULTS
FIGURE 26. SIMPLIFIED ENABLE AND VOLTAGE FEED-FORWARD CIRCUIT
20
FN7822.0
December 3, 2012
ISL8225M
Soft-Start
Power-Good
The ISL8225M has an internal, digital, pre-charged soft-start
circuitry (Figures 27 to 29). The circuitry has a rise time inversely
proportional to the switching frequency. Rise time is determined
by a digital counter that increments with every pulse of the phase
clock. The full soft-start time from 0V to 0.6V can be estimated
as shown in Equation 6. The typical soft-start time is ~2.5ms.
Power-good comparators monitor voltage on the VMON pin. Trip
points are shown in Figure 30. PGOOD is not asserted until the
soft-start cycle is complete. PGOOD pulls low upon both ENs
disabling it or when the VMON voltage is out of the threshold
window. PGOOD does not pull low until the fault presents for
three consecutive clock cycles.
1280
t SS = ------------f SW
(EQ. 6)
The ISL8225M is able to work under a pre-charged output. The
PWM outputs do not feed to the drivers until the first PWM pulse
is seen. The low-side MOSFET is on for the first clock cycle, to
provide charge for the bootstrap capacitor. If the pre-charged
output voltage is greater than the final target level but less than
the 113% set point, switching does not start until the output
voltage is reduced to the target voltage and the first PWM pulse
is generated. The maximum allowable pre-charged level is 113%.
If the pre-charged level is above 113% but below 120%, the
output hiccups between 113% (LGATE turns on) and 87% (LGATE
turns off), while EN is pulled low. If the pre-charged load voltage
is above 120% of the targeted output voltage, then the controller
is latched off and cannot power up.
UV indication is not enabled until the end of soft-start. In a UV
event, if the output drops below -13% of the target level due to a
reason other than OV, OC, OT, or PLL faults (cases when EN is not
pulled low), PGOOD is pulled low.
CHANNEL 1 UV/OV
CHANNEL 2 UV/OV
END OF SS1
END OF SS2
SS1_PERIOD
SS2_PERIOD
PGOOD
AND
OR
AND
+20%
SS SETTLING AT VREF + 100mV
FIRST PWM PULSE
VOUT TARGET VOLTAGE
VMON1, 2
+13%
+9%
0.0V
-100mV
t
SS
VREF
1280
= ------------f
SW
-9%
-13%
384
t SS_DLY = -----------f SW
FIGURE 27. SOFT-START WITH VOUT = 0V
PGOOD LATCH OFF
AFTER 120% OV
PGOOD
FIGURE 30. POWER-GOOD THRESHOLD WINDOW
Current Share
FIRST PWM PULSE
SS SETTLING AT VREF + 100mV
VOUT TARGET VOLTAGE
INIT. VOUT
-100mV
FIGURE 28. SOFT-START WITH VOUT < TARGET VOLTAGE
OV = 113%
FIRST PWM PULSE
VOUT TARGET VOLTAGE
FIGURE 29. SOFT-START WITH VOUT BELOW 113% BUT ABOVE FINAL
TARGET VOLTAGE
21
In parallel operations, the share bus voltages (ISHARE) of
different modules must tie together. The ISHARE pin voltage is
set by an internal resistor and represents the average current of
all active modules. The average current signal is compared with
the local module current, and the current share error signal is fed
into the current correction block to adjust each module’s PWM
pulse accordingly. The current share function provides at least
10% overall accuracy between modules. The current share bus
works for up to 12 phases without requiring an external clock. A
470pF ~1nF capacitor is recommended for each ISHARE pin.
In current sharing scheme, all slave channels have the feedback
loops disabled with the VSEN- pin tied to VCC. The master
channel can control all modules with COMP and ISHARE pins tied
together. For phase-shift setting, all VMON pins of slave channels
are needed to set 0.6V for monitoring use only. Typically, the
slaved VMON pins can be tied together with a resistor divider to
VOUT. However, if the MODE pin is tied to VCC for mode setting,
the related VMON2 pin is needed to tie to SGND with a 1.0kΩ
resistor, as shown in Figure 23 on page 15. If there are multiple
FN7822.0
December 3, 2012
ISL8225M
Over-voltage Protection (OVP)
The over-voltage (OV) protection indication circuitry monitors
voltage on the VMON pin. OV protection is active from the
beginning of soft-start. An OV condition (>120%) would latch the
IC off. In this condition, the high-side MOSFET (Q1 or Q3) latches
off permanently. The low-side MOSFET (Q2 or Q4) turns on
immediately at the time of OV trip and then turns off
permanently after the output voltage drops below 87%. EN and
PGOOD are also latched low in an OV event. The latch condition
can be reset only by recycling VCC.
There is another non-latch OV protection (113% of target level).
When EN is low and output is over 113% OV, the low-side
MOSFET turns on until output drops below 87%. This action
protects the power trains when even a single channel of a
multi-module system detects OV. The low-side MOSFET always
turns on when EN = LOW and the output voltage rises above
113% (all EN pins are tied together) and turns off after the output
drops below 87%. Thus, in a high phase count application
(multi-module mode), all cascaded modules can latch off
simultaneously via the EN pins (EN pins are tied together in
multi-phase mode). Each channel shares the same sink current
to reduce stress and eliminate bouncing among phases.
Over-Temperature Protection (OTP)
When the junction temperature of the internal controller is
greater than +150°C (typically), the EN pin is pulled low to inform
other cascaded channels via their EN pins. All connected ENs
stay low and then release after the module’s junction
temperature drops below +125°C (typically), a +25°C hysteresis
(typically).
Over-current Protection (OCP)
The OCP peak level is set to about 20A for each channel, but the OC
trip point can vary, due mainly to MOSFET rDS(ON) variations (over
process, current, and temperature). The OCP can be increased by
increasing the switching frequency since the inductor ripple is
reduced. However, the module efficiency drops accordingly with
more switching loss. When OCP is triggered, the controller pulls
EN low immediately to turn off all switches. The OCP function is
enabled at start-up and has a 7-cycle delay before it triggers.
In multi-module operation, ISHARE pins can be connected to
create VISHARE, which represents the average current of all
active channels. Total system currents are compared with a
precision threshold to determine the over-current condition. Each
channel also has an additional over-current set point with a
7-cycle delay. This scheme helps protect modules from damage
in multi-module mode by having each module carry less current
than the set point.
For overload and hard short conditions, over-current protection
reduces the regulator RMS output current to much less than full
load by putting the controller into hiccup mode. A delay equal to
three soft-start intervals is entered to allow time to clear the
22
disturbance. After the delay time, the controller initiates a
soft-start interval. If the output voltage comes up and returns to
regulation, PGOOD transitions high. If the OC trip is exceeded
during the soft-start interval, the controller pulls EN low again.
The PGOOD signal remains low, and the soft-start interval is
allowed to expire. Another soft-start interval is initiated after the
delay interval. If an over-current trip occurs again, this same cycle
repeats until the fault is removed. Since the output voltage may
trigger the OVP if the output current changes too fast, the module
can go into latch-off mode. In this case, the module needs to be
restarted.
Frequency Synchronization and Phase Lock
Loop
The SYNC pin has two primary capabilities: fixed frequency
operation and synchronized frequency operation. ISL8225M has
an internally set fixed frequency of 500kHz. By tying a resistor
(RSYNC) to SGND from the SYNC pin, the switching frequency can
be set to be more than 500kHz. To increase the switching
frequency, select an externally connected resistor, RSYNC, from
SYNC to SGND according to the frequency setting curve shown in
Figure 31. See Table 1 for RSYNC at commonly used frequency.
800
700
600
RSYNC (kΩ)
modules paralleled with the MODE pins tied to VCC, each VMON2
pin of the slave module needs to have a 1.0kΩ resistor to GND
while all VMON1 pins of the slave modules can be tied together
with a resistor divider from VOUT to GND, as shown in Figure 24
on page 16. Also see Table 3 for VMON settings.
500
400
300
200
100
0
500
600
700
800
900 1000 1100 1200 1300 1400 1500
FREQUENCY (kHz)
FIGURE 31. RSYNC vs SWITCHING FREQUENCY
Connecting the SYNC pin to an external square-pulse waveform
(such as the CLKOUT signal, typically 50% duty cycle from
another ISL8225M) synchronizes the ISL8225M switching
frequency to the fundamental frequency of the input waveform.
The synchronized frequency can be from 150kHz to 1500kHz.
The applied square-pulse recommended high level voltage range
is 3V to VCC+0.3V. The frequency synchronization feature
synchronizes the leading edge of the CLKOUT signal with the
falling edge of Channel 1’s PWM signal. CLKOUT is not available
until PLL locks. No capacitor is recommended on the SYNC pin.
Locking time is typically 130µs. EN is not released for a soft-start
cycle until SYNC is stabilized and PLL is locking. Connecting all
EN pins together in a multi-phase configuration is recommended.
Loss of a synchronization signal for 13 clock cycles causes the
module to be disabled until PLL returns locking, at which point, a
soft-start cycle is initiated and normal operation resumes.
Holding SYNC low disables the module. Please note that the
quick change of the synchronization signal can cause module
shutdown.
FN7822.0
December 3, 2012
ISL8225M
Tracking Function
Layout Guide
If CLKOUT is less than 800mV, an external soft-start ramp (0.6V)
can be in parallel with the Channel 2 internal soft-start ramp for
tracking applications. Therefore, the Channel 2’s output voltage
can track the output voltage of Channel 1.
To achieve stable operation, low losses, and good thermal
performance, some layout considerations are necessary
(Figure 32).
The tracking function can be applied to a typical Double Data
Rate (DDR) memory application, as shown in Figure 20 on
page 13. The output voltage (typical VTT output) of Channel 2
tracks with the input voltage [typical VDDQ*(1+k) from
Channel 1] at the CLKOUT pin. As for the external input signal
and the internal reference signal (ramp and 0.6V), the one with
the lowest voltage is used as the reference for comparing with
the FB signal. In DDR configuration, VTT channel should start up
later, after its internal soft-start ramp, such that VTT tracks the
voltage on the CLKOUT pin derived from VDDQ. This configuration
can be achieved by adding more filtering at EN/FF1 than at
EN/FF2.
The resistor divider ratio (k) of R7/R8 in Figure 20 is calculated
as shown in Equation 7:
V TT
k = -----------–1
0.6V
(EQ. 7)
Mode Programming
ISL8225M can be programmed for dual-output, paralleled
single-output or mixed outputs (Channel 1 in parallel and
Channel 2 in dual-output). With multiple ISL8225Ms, up to 6
modules using its internal cascaded clock signal control, the
modules can supply large current up to 180A. For complete
operation, please refer to Table 3 on page 18. Commonly used
settings are listed in Table 5.
TABLE 5. PHASE-SHIFT SETTING
OPERATION
PHASE-SHIFT
BETWEEN PHASES
VSEN2- VSEN2+ CLKOUT MODE
Dual Output
(Figure 18)
180°
N/C
N/C
VCC
N/C
30A
(Figure 19)
180°
VCC
N/C
N/C
SGND
60A
(Figure 22)
90°
VCC
VCC
N/C
VCC
90A
(Figure 24)
60°
VCC
N/C
N/C
SGND
• VOUT1, VOUT2, PHASE1, PHASE2, PGND, VIN1 and VIN2
should have large, solid planes. Place enough thermal vias to
connect the power planes in different layers under or around
the module.
• Place high-frequency ceramic capacitors between VIN, VOUT,
and PGND, as closely to the module as possible in order to
minimize high-frequency noise.
• Use remote sensed traces to the regulation point to achieve
tight output voltage regulation, and keep the sensing traces
close to each other in parallel.
• PHASE1 and PHASE2 pads are switching nodes that generate
switching noise. Keep these pads under the module. For
noise-sensitive applications, it is recommended to keep phase
pads only on the top and inner layers of the PCB. Also, do not
place phase pads exposed to the outside on the bottom layer
of the PCB.
• Avoid routing any noise-sensitive signal traces, such as the
VSEN+, VSEN-, ISHARE, COMP and VMON sensing points, near
the PHASE pins.
• Use a separated SGND ground copper area for components
connected to signal ground pins. Connect SGND to PGND with
multiple vias underneath the unit in one location to avoid the
noise coupling, as shown in Figure 32. Don't ground vias
surrounded by the noisy planes of VIN, PHASE and VOUT. For
dual output applications, the SGND to PGND vias are preferred
to be as close as possible to SGND pin.
• Optional snubbers can be put on the bottom side of the board
layout, connecting the PHASE to PGND planes, as shown in
Figure 32.
COUT2
COUT1
PGND
PGND
VOUT2
VOUT1
R3
+
R4
KELVIN CONNECTIONS
FOR THE VSENS LINES
R1
TO LOAD
+
TO LOAD
-
R2
KELVIN CONNECTIONS
FOR THE VSENS LINES
PIN 1
SGND
When the module is in the dual-output condition, depending
upon the voltage level at CLKOUT (which is set by the VCC resistor
divider output), ISL8225M operates with phase shifted as the
CLKOUT voltage shown in Table 6. The phase shift is latched as
VCC rises above POR; it cannot be changed on the fly.
TABLE 6. CLKOUT TO PROGRAM PHASE SHIFT AT DUAL-OUTPUT
CLKOUT
VOLTAGE SETTING
PHASE FOR CLKOUT WRT
CHANNEL 1
RECOMMENDED
CLKOUT VOLTAGE
<29% of VCC
-60°
15% VCC
29% to 45% of VCC
90°
37% VCC
45% to 62% of VCC
120°
53% VCC
62% of VCC
180°
VCC
23
VIN2
VIN1
CIN2
PHASE2
PHASE1
OPTIONAL SNUBBER
CIN1
OPTIONAL SNUBBER
PGND
FIGURE 32. RECOMMENDED LAYOUT
FN7822.0
December 3, 2012
ISL8225M
Current Derating
Experimental power loss curves (Figures 33 and 34), along with
θJA from thermal modeling analysis, can be used to evaluate the
thermal consideration for the module. Derating curves are
derived from the maximum power allowed while maintaining
temperature below the maximum junction temperature of
+120°C (Figures 35 through 40). The maximum +120°C
junction temperature is considered for the module to load the
current consistently and it provides the 5°C margin of safety
from the rated junction temperature of +125°C. If necessary,
customers can adjust the margin of safety according to the real
applications. All derating curves are obtained from the tests on
the ISL8225MEVAL4Z evaluation board. In the actual
application, other heat sources and design margins should be
considered.
Package Description
pad and the I/O termination dimensions, except that the PCB
lands are slightly longer than the QFN terminations by about
0.2mm (0.4mm max). This extension allows for solder filleting
around the package periphery and ensures a more complete and
inspectable solder joint. The thermal lands on the PCB layout
should match 1:1 with the package exposed die pads.
Thermal Vias
A grid of 1.0mm to 1.2mm pitched thermal vias, which drops
down and connects to buried copper planes, should be placed
under the thermal land. The vias should be about 0.3mm to
0.33mm in diameter, with the barrel plated to about 2.0 ounce
copper. Although adding more vias (by decreasing pitch)
improves thermal performance, it also diminishes results as
more vias are added. Use only as many vias as are needed for
the thermal land size and as your board design rules allow.
Stencil Pattern Design
The ISL8225M is integrated into a quad flat-pack no-lead
package (QFN). This package has such advantages as good
thermal and electrical conductivity, low weight, and small size.
The QFN package is applicable for surface mounting technology
and is becoming more common in the industry. The ISL8225M
contains several types of devices, including resistors, capacitors,
inductors, and control ICs. The ISL8225M is a copper lead-frame
based package with exposed copper thermal pads, which have
good electrical and thermal conductivity. The copper lead frame
and multi-component assembly are over-molded with polymer
mold compound to protect these devices.
The package outline, typical PCB layout pattern, and typical
stencil pattern design are shown in the L26.17x17 package
outline drawing on page 27. Figure 41 shows typical reflow
profile parameters. These guidelines are general design rules.
Users can modify parameters according to specific applications.
PCB Layout Pattern Design
The bottom of ISL8225M is a lead-frame footprint, which is
attached to the PCB by surface mounting. The PCB layout pattern
is shown in the L26.17x17 package outline drawing on page 28.
The PCB layout pattern is essentially 1:1 with the QFN exposed
Reflowed solder joints on the perimeter I/O lands should have
about a 50µm to 75µm (2mil to 3mil) standoff height. The solder
paste stencil design is the first step in developing optimized,
reliable solder joins. The stencil aperture size to land size ratio
should typically be 1:1. Aperture width may be reduced slightly to
help prevent solder bridging between adjacent I/O lands.
To reduce solder paste volume on the larger thermal lands, an
array of smaller apertures instead of one large aperture is
recommended. The stencil printing area should cover 50% to
80% of the PCB layout pattern. A typical solder stencil pattern is
shown in the L26.17x17 package outline drawing on page 28.
The gap width between pads is 0.6mm. Consider the symmetry
of the whole stencil pattern when designing the pads.
A laser-cut, stainless-steel stencil with electropolished
trapezoidal walls is recommended. Electropolishing smooths the
aperture walls, resulting in reduced surface friction and better
paste release, which reduces voids. Using a trapezoidal section
aperture (TSA) also promotes paste release and forms a
brick-like paste deposit, which assists in firm component
placement. A 0.1mm to 0.15mm stencil thickness is
recommended for this large-pitch (1.0mm) QFN.
7
8
6
7
6
POWER LOSS (W)
POWER LOSS (W)
5
4
3
5VIN TO 2.5VOUT
2
5VIN TO 1VOUT
5
10
15
20
LOAD CURRENT (A)
25
FIGURE 33. POWER LOSS CURVES OF 5VIN
24
4
3
12VIN TO 1VOUT
12VIN TO 1.5VOUT
1
5VIN TO 1.5VOUT
0
12VIN TO 2.5VOUT
2
1
0
5
30
0
0
5
10
15
20
25
30
LOAD CURRENT (A)
FIGURE 34. POWER LOSS CURVES OF 12VIN
FN7822.0
December 3, 2012
ISL8225M
Derating Curves
All of the following curves were plotted at TJ = +120°C.
30
30
25
400LFM
200LFM
20
15
LOAD CURRENT (A)
LOAD CURRENT (A)
25
0LFM
10
200LFM
20
400LFM
15
10
0LFM
5
0
25
5
45
65
85
TEMPERATURE (°C)
105
0
125
25
FIGURE 35. DERATING CURVE 5VIN TO 1VOUT
45
65
85
TEMPERATURE (°C)
105
125
FIGURE 36. DERATING CURVE 12VIN TO 1VOUT
30
30
25
25
200LFM
15
0LFM
10
LOAD CURRENT (A)
LOAD CURRENT (A)
400LFM
20
0LFM
400LFM
15
200LFM
10
5
5
0
25
20
45
65
85
105
0
25
125
45
65
85
105
125
TEMPERATURE (°C)
TEMPERATURE (°C)
FIGURE 37. DERATING CURVE 5VIN TO 1.5VOUT
FIGURE 38. DERATING CURVE 12VIN TO 1.5VOUT
30
30
400LFM
25
25
LOAD CURRENT (A)
LOAD CURRENT (A)
400LFM
20
200LFM
15
10
0LFM
20
15
0LFM
10
200LFM
5
5
0
25
45
65
85
105
TEMPERATURE (°C)
FIGURE 39. DERATING CURVE 5VIN TO 2.5VOUT
25
125
0
25
45
65
85
105
125
TEMPERATURE (°C)
FIGURE 40. DERATING CURVE 12VIN TO 2.5VOUT
FN7822.0
December 3, 2012
ISL8225M
Reflow Parameters
300
PEAK TEMPERATURE +230°C~+245°C;
TYPICALLY 60s-70s ABOVE +220°C
KEEP LESS THAN 30s WITHIN 5°C OF PEAK TEMP.
250
TEMPERATURE (°C)
Due to the low mount height of the QFN, "No Clean" Type 3 solder
paste, per ANSI/J-STD-005, is recommended. Nitrogen purge is
also recommended during reflow. A system board reflow profile
depends on the thermal mass of the entire populated board, so it
is not practical to define a specific soldering profile just for the
QFN. The profile given in Figure 41 is provided as a guideline to
customize for varying manufacturing practices and applications.
200 SLOW RAMP (3°C/s MAX)
AND SOAK FROM +100°C
TO +180°C FOR 90s~120s
150
100
RAMP RATE ≤1.5°C FROM +70°C TO +90°C
50
0
0
100
150
200
250
300
350
DURATION (s)
FIGURE 41. TYPICAL REFLOW PROFILE
Revision History
The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to web to make sure you
have the latest revision.
DATE
REVISION
December 3, 2012
FN7822.0
CHANGE
Initial Release
About Intersil
Intersil Corporation is a leader in the design and manufacture of high-performance analog, mixed-signal and power management
semiconductors. The company's products address some of the fastest growing markets within the industrial and infrastructure,
personal computing and high-end consumer markets. For more information about Intersil or to find out how to become a member of
our winning team, visit our website and career page at www.intersil.com.
For a complete listing of Applications, Related Documentation and Related Parts, please see the respective product information page.
Also, please check the product information page to ensure that you have the most updated datasheet: ISL8225M
To report errors or suggestions for this datasheet, please go to: www.intersil.com/askourstaff
Reliability reports are available from our website at: http://rel.intersil.com/reports/sear
For additional products, see www.intersil.com/en/products.html
Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted
in the quality certifications found at www.intersil.com/en/support/qualandreliability.html
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time
without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be
accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
26
FN7822.0
December 3, 2012
ISL8225M
Package Outline Drawing
L26.17x17
26 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE (PUNCH QFN)
Rev 4, 10/12
17.8±0.2
17.0±0.2
9
8
9
7 6 5 4 3 2
8
7 6 5 4 3 2
1
26
1
26
10
10
25
25
17.0±0.2
17.8±0.2
11
11
24
23
12
24
23
12
22
21
22
21
14
13
151617181920
0.2 S AB
3.50
0.10
0.10
3.50
0.10
0.10
0.70
B
0.38
8.95
4.93
10
4.93
8.95
0.38
0.80
AAA AAAAA AAAAA
AAA AAAAA AA
2.37
12
10
1
1
3.35
3.35
A:1.0±0.1
2.97
AAA AAAAA AAAAA
14x 0.75
16x 1.75±0.05 (FULL LEAD)
A
0.05
S AB
PIN-TO-PIN DISTANCE (BOTTOM VIEW)
BOTTOM VIEW
R0
All A
.25
S 0.2
roun
d of
10°(M
AX)
0.25
7.5±0.2
0.25
12x 1.07 0.10
2.77
5.33
0.25
0.10
5.33
3.66
3.50
52x 0.50 (ALL OF LEAD TIPS)
16X 0.70 (FULL LEAD)
16x 0.55 (FULL LEAD)
X4
12
15 1617 1819 20
PIN NO. DEFINITION (TOP VIEW)
TOP VIEW
4.00
3.50
14
AAAA AAAAA AAA
13
SIDE VIEW
S
S 0.03
27
FN7822.0
December 3, 2012
ISL8225M
0.25
0.40
0.65
0.75
9.30
7.98
6.35
5.65
5.35
5.24
4.65
4.35
3.65
3.35
2.65
2.35
1.65
1.35
0.65
0.25
0.00
0.55
3.10
3.25
3.75
3.90
7.15
7.25
7.70
7.96
9.30
9.30
7.83
6.53
6.50
6.13
5.73
5.33
0.75
0.65
0.40
0.25
9.30
7.15
6.35
5.65
5.35
4.65
4.35
1
10
0.75
0.35
0
0.35
0.75
12
4.35
4.65
5.35
5.65
6.35
7.15
9.30
5.33
5.73
6.13
6.50
6.53
7.83
9.30
9.30
7.98
7.15
6.35
5.93
5.65
5.35
5.24
4.65
4.35
3.65
3.35
2.65
2.35
1.65
1.35
1.35
0.65
0.25
0.05
0
0.55
3.10
3.25
3.75
3.90
7.15
7.25
7.70
7.83
7.96
9.30
TYPICAL RECOMMENDED LAND PATTERN (TOP VIEW)
9.20
7.83
7.25
6.25
5.75
5.25
4.75
4.25
3.75
3.25
2.75
2.25
1.75
1.25
0.75
0.15
0
0.25
0.75
1.25
1.75
2.25
2.75
3.15
3.85
4.25
4.75
5.25
5.75
6.25
6.75
7.15
7.83
7.93
9.20
7.38
6.60
4.05
2.70
2.40
1.05
0.00
1.05
2.40
2.70
4.05
3.36
5.03
5.43
6.43
6.83
7.38
6.60
7.38
*
7.38
6.03
5.54
28
7.38
7.38
6.83
6.43
5.43
5.03
3.36
2.76
0.95
0.70
0
0.70
0.95
0
0.05
1.13
1.73
2.80
4.20
5.28
5.88
6.95
9.20
7.83
7.25
6.25
5.75
5.25
4.75
4.25
3.75
3.25
2.75
2.25
1.75
1.25
0.75
0.15
0
0.25
0.75
1.25
1.75
2.25
2.75
3.15
3.85
4.25
4.75
5.25
5.75
6.25
6.75
7.15
7.83
9.20
SOLDER STENCIL PATTERN WITH SQUARE PADS 1 OF 2 (TOP VIEW)
5.54
0
0.05
0.60
1.13
1.73
1.80
2.40
2.80
3.60
4.20
5.28
5.41
5.88
6.01
6.95
7.23
7.25
6.25
5.75
5.25
4.75
4.25
3.75
3.25
2.75
2.25
1.75
1.25
0.95
0.25
0
0.25
0.95
1.25
1.75
2.25
2.75
3.25
3.75
4.25
4.75
5.25
5.75
6.25
7.25
9.20
7.93
5.25
4.75
4.25
3.75
3.25
2.75
2.25
1.75
1.25
0.85
0.15
0
0.15
0.85
1.25
1.75
2.25
2.75
3.25
3.75
4.25
4.75
5.25
7.93
SOLDER STENCIL PATTERN WITH SQUARE PADS 2 OF 2 (TOP VIEW)
FN7822.0
December 3, 2012