Data Sheet

TDF8599B
I2C-bus controlled dual channel 43 W/4 Ω, single channel
85 W/1 Ω class-D power amplifier with load diagnostics
Rev. 01 — 29 July 2009
Product data sheet
1. General description
The TDF8599B is a dual Bridge-Tied Load (BTL) car audio amplifier comprising an
NDMOST-NDMOST output stage based on SOI BCDMOS technology. Low power
dissipation enables the TDF8599B high-efficiency, class-D amplifier to be used with a
smaller heat sink than those normally used with standard class-AB amplifiers.
The TDF8599B can operate in either non-I2C-bus mode or I2C-bus mode. When in
I2C-bus mode, DC load detection results and fault conditions can be easily read back from
the device. Up to 15 I2C-bus addresses can be selected depending on the value of the
external resistor connected to pins ADS and MOD.
When pin ADS is short circuited to ground, the TDF8599B operates in non-I2C-bus mode.
Switching between Operating mode and Mute mode in non-I2C-bus mode is only possible
using pins EN and SEL_MUTE.
2. Features
n
n
n
n
n
n
n
n
n
n
n
n
n
n
n
High-efficiency
Low quiescent current
Operating voltage from 8 V to 24 V
Two 4 Ω/2 Ω capable BTL channels or one 1 Ω capable BTL channel
Differential inputs
I2C-bus mode with 15 I2C-bus addresses or non-I2C-bus mode operation
Clip detect
Independent short circuit protection for each channel
Advanced short circuit protection for load, GND and supply
Load dump protection
Thermal foldback and thermal protection
DC offset protection
Selectable AD or BD modulation
Parallel channel mode for high current drive capability
Advanced clocking:
u Switchable oscillator clock source: internal for Master mode or external for Slave
mode
u Spread spectrum mode
u Phase staggering
u Frequency hopping
n No ‘pop noise’ caused by DC output offset voltage
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
n I2C-bus mode:
u DC load detection
u AC load detection
u Thermal pre-warning diagnostic level setting
u Identification of activated protections or warnings
u Selectable diagnostic information available using pins DIAG and CLIP
n Qualified in accordance with AEC-Q100
3. Applications
n Car audio
4. Quick reference data
Table 1.
Quick reference data
VP = 14.4 V unless otherwise stated.
Symbol
Parameter
Conditions
Min
[1]
Typ
Max
Unit
VP
supply voltage
8
14.4
24
V
IP
supply current
off state; Tj ≤ 85 °C; VP = 14.4 V
-
2
10
µA
Iq(tot)
total quiescent current
Operating mode; no load, snubbers and
filter connected
-
90
120
mA
Po
output power
Stereo mode:
VP = 14.4 V; THD = 1 %; RL = 4 Ω
18
20
-
W
VP = 14.4 V; THD = 10 %; RL = 4 Ω
24
26
-
W
square wave (EIAJ); RL = 4 Ω
-
40
-
W
[2]
VP = 24 V; THD = 10 %; RL = 4 Ω
-
70
-
W
VP = 14.4 V; THD = 1 %; RL = 2 Ω
29
32
-
W
VP = 14.4 V; THD = 10 %; RL = 2 Ω
39
43
-
W
-
70
-
W
VP = 14.4 V; THD = 10 %; RL = 1 Ω
-
85
-
W
VP = 24 V; THD = 10 %; RL = 2 Ω
-
138
-
W
VP = 24 V; THD = 1 %; RL = 1 Ω
135
150
-
W
square wave (EIAJ); RL = 2 Ω
Parallel mode:
[1]
In this data sheet supply voltage VP describes VP1, VP2 and VPA.
[2]
Output power is measured indirectly based on RDSon measurement.
[2]
5. Ordering information
Table 2.
Ordering information
Type number
TDF8599BTH
Package
Name
Description
Version
HSOP36
plastic, heatsink small outline package; 36 leads; low stand-off height
SOT851-2
TDF8599B_1
Product data sheet
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Rev. 01 — 29 July 2009
2 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
6. Block diagram
VDDA
10
AGND
SVRR
VP1
VP2
31
24
34
STABI1
9
32
8
VP1
33
PWM
CONTROL
1
OUT1N
DRIVER
LOW
PGND1
29
VP1
IN1N
BOOT1N
DRIVER
HIGH
TDF8599B
IN1P
VSTAB1
2
BOOT1P
DRIVER
HIGH
28
PWM
CONTROL
OUT1P
DRIVER
LOW
ACGND
PGND1
5
+
23
VP2
BOOT2N
DRIVER
HIGH
22
PWM
CONTROL
IN2P
3
PGND2
26
VP2
IN2N
OUT2N
DRIVER
LOW
4
BOOT2P
DRIVER
HIGH
27
PWM
CONTROL
OUT2P
DRIVER
LOW
OSCSET
OSCIO
SSM
MOD
VDDD
EN
SEL_MUTE
SCL
SDA
ADS
18
PGND2
19
17
OSCILLATOR
12
35
5 V STABI
16
15
MODE
SELECT
+
I2C-BUS
PROTECTION
DIAGNOSTICS
OVP, OCP, OTP
UVP, TFP,
WP, DCP
11
GNDD/HW
14
DIAG
13
20
CLIP DCP
30
25
PGND1
PGND2
001aak214
Block diagram
TDF8599B_1
Product data sheet
VSTAB2
6
7
36
Fig 1.
21
STABI2
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 29 July 2009
3 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
7. Pinning information
7.1 Pinning
GNDD/HW 36
1
IN1P
VDDD 35
2
IN1N
VSTAB1 34
3
IN2P
OUT1N 33
4
IN2N
BOOT1N 32
5
ACGND
VP1 31
6
EN
PGND1 30
7
SEL_MUTE
BOOT1P 29
8
SVRR
OUT1P 28
9
AGND
OUT2P 27
TDF8599BTH
BOOT2P 26
10 VDDA
11 ADS
PGND2 25
12 MOD
VP2 24
13 CLIP
BOOT2N 23
14 DIAG
OUT2N 22
15 SDA
VSTAB2 21
16 SCL
DCP 20
17 SSM
18 OSCSET
OSCIO 19
001aak215
Fig 2.
Heatsink up (top view) pin configuration TDF8599BTH
7.2 Pin description
Table 3.
Pin description
Symbol
Pin
Type[1]
Description
IN1P
1
I
channel 1 positive audio input
IN1N
2
I
channel 1 negative audio input
IN2P
3
I
channel 2 positive audio input
IN2N
4
I
channel 2 negative audio input
ACGND
5
I
decoupling for input reference voltage
EN
6
I
enable input:
non-I2C-bus mode: switch between off and Mute mode
I2C-bus mode: off and Standby mode
SEL_MUTE
7
I
select mute or unmute
SVRR
8
I
decoupling for internal half supply reference voltage
AGND
9
G
analog supply ground
VDDA
10
P
analog supply voltage
ADS
11
I
non-I2C-bus mode: connected to ground
I2C-bus mode: selection and address selection pin
MOD
12
I
modulation mode, phase shift and parallel mode select
TDF8599B_1
Product data sheet
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Rev. 01 — 29 July 2009
4 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
Table 3.
Pin description …continued
Symbol
Pin
Type[1]
Description
CLIP
13
O
clip output; open-drain
DIAG
14
O
diagnostic output; open-drain
SDA
15
I/O
I2C-bus data input and output
SCL
16
I
I2C-bus clock input
SSM
17
master setting: Spread spectrum mode frequency
slave setting: phase lock operation
OSCSET
18
master/slave oscillator setting
master only setting: set internal oscillator frequency
OSCIO
19
I/O
external oscillator slave setting: input
internal oscillator master setting: output
DCP
20
VSTAB2
21
OUT2N
22
BOOT2N
23
[2]
24
P
channel 2 power supply voltage
PGND2
25
G
channel 2 power ground
BOOT2P
26
OUT2P
27
O
channel 2 positive PWM output
OUT1P
28
O
channel 1 positive PWM output
BOOT1P
29
PGND1
30
G
channel 1 power ground
VP1[2]
31
P
channel 1 power supply voltage
BOOT1N
32
OUT1N
33
VP2
I
DC protection input for the filtered output voltages
decoupling internal stabilizer 2 for DMOST drivers
O
channel 2 negative PWM output
boot 2 negative bootstrap capacitor
boot 2 positive bootstrap capacitor
boot 1 positive bootstrap capacitor
boot 1 negative bootstrap capacitor
O
channel 1 negative PWM output
VSTAB1
34
decoupling internal stabilizer 1 for DMOST drivers
VDDD
35
decoupling of the internal 5 V logic supply
GNDD/HW
36
G
ground digital supply voltage
handle wafer connection
[1]
I = input, O = output, I/O = input/output, G = ground and P = power supply.
[2]
In this data sheet supply voltage VP describes VP1, VP2 and VPA.
8. Functional description
8.1 General
The TDF8599B is a dual full bridge (BTL) audio power amplifier using class-D technology.
The audio input signal is converted into a Pulse-Width Modulated (PWM) signal using the
analog input and PWM control stages. A PWM signal is applied to driver circuits for both
high-side and low-side enabling the DMOS power output transistors to be driven. An
external 2nd order low-pass filter converts the PWM signal into an analog audio signal
across the loudspeakers.
TDF8599B_1
Product data sheet
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Rev. 01 — 29 July 2009
5 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
The TDF8599B includes integrated common circuits for all channels such as the oscillator,
all reference sources, mode functionality and a digital timing manager. In addition, the
built-in protection includes thermal foldback, temperature, overcurrent and overvoltage
(load dump).
The TDF8599B operates in either I2C-bus mode or non-I2C-bus mode. In I2C-bus mode,
DC load detection, frequency hopping and extended configuration functions are provided
together with enhanced diagnostic information.
8.2 Mode selection
The mode pins EN, ADS and SEL_MUTE enable mute state, I2C-bus mode and Operating
mode switching.
Pin SEL_MUTE is used to mute and unmute the device and must be connected to an
external capacitor (CON). This capacitor generates a time constant which is used to
ensure smooth fade-in and fade-out of the input signal.
The TDF8599B is enabled when pin EN is HIGH. When pin EN is LOW, the TDF8599B is
off and the supply current is at its lowest value (typically 2 µA). When off, the TDF8599B is
completely deactivated and will not react to I2C-bus commands.
I2C-bus mode is selected by connecting a resistor between pins ADS and AGND. In
I2C-bus mode with pin EN HIGH, the TDF8599B waits for further commands (see
Table 4). I2C-bus mode is described in Section 9 on page 23.
Non-I2C-bus mode is selected by connecting pin ADS to pin AGND. In non-I2C-bus mode,
the default TDF8599B state is Mute mode. The amplifiers switch idle (50 % duty cycle)
and the audio signal is suppressed at the output. In addition, the capacitor (CSVRR) is
charged to half the supply voltage. To enter Operating mode, pin SEL_MUTE must be
HIGH with S1 open, enabling capacitor (CON) charged by an internal pull-up (see
Figure 3). In addition, pin EN must be driven HIGH.
S2
3.3 V
S2
EN
EN
3.3 V
TDF8599B
ADS
SEL_MUTE
TDF8599B
ADS
SEL_MUTE
RADS
AGND
AGND
CON
CON
S1
001aak216
a. Non-I2C-bus mode
001aak217
b. I2C-bus mode
See Table 13 for detailed information on
RADS.
Fig 3.
Mode selection
I2C-bus mode and non-I2C-bus mode control are described in Table 4 on page 7 and
Table 5 on page 7. Switches S1 and S2 are shown in Figure 3.
TDF8599B_1
Product data sheet
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Rev. 01 — 29 July 2009
6 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
Table 4.
I2C-bus mode operation
Pin EN
Pin SEL_MUTE
Bit IB1[D0]
Bit IB2[D0]
Mode
HIGH (S2 closed)
HIGH
1
0
Operating mode
LOW
1
1
Mute mode
LOW
0
X[1]
Standby mode
X[1]
X[1]
X[1]
off (default)
LOW (S2 open)
[1]
X = do not care.
Table 5.
Non-I2C-bus mode operation
Pin EN
Pin SEL_MUTE
Mode
HIGH (S2 closed)
HIGH (S1 open)
Operating mode
LOW (S1 closed)
Mute mode (default)
X[1]
off
LOW (S2 open)
[1]
X = do not care.
8.3 Pulse-width modulation frequency
The output signal from the amplifier is a PWM signal with a clock frequency of fosc. This
frequency is set by connecting a resistor (Rosc) between pins OSCSET and AGND. The
optimal clock frequency setting is between 300 kHz and 400 kHz. Connecting a resistor
with a value of 39 kΩ, for example, sets the clock frequency to 320 kHz (see Figure 5).
The external capacitor (Cosc) has no influence on the oscillator frequency. It does
however, reduce jitter and sensitivity to disturbance. Using a 2nd order LC demodulation
filter in the application generates an analog audio signal across the loudspeaker.
8.3.1 Master and slave mode selection
In a master and slave configuration, multiple TDF8599B devices are daisy-chained
together in one audio application with a single device providing the clock frequency signal
for all other devices. In this situation, it is recommended that the oscillators of all devices
are synchronized for optimum EMI behavior as follows:
All OSCIO pins are connected together and one TDF8599B in the application is
configured as the clock-master. All other TDF8599B devices are configured as
clock-slaves (see Figure 5).
• The clock-master pin OSCIO is configured as the oscillator output. When a resistor
(Rosc) is connected between pins OSCSET and AGND, the TDF8599B is in Master
mode.
• The clock-slave pins OSCIO are configured as the oscillator inputs. When pin
OSCSET is directly connected to pin AGND (see Table 6), the TDF8599B is in Slave
mode.
Table 6.
Mode setting pin OSCIO
Mode
Settings
Pin OSCSET
Pin OSCIO
Master
Rosc > 26 kΩ
output
Slave
Rosc = 0 Ω; shorted to pin AGND
input
TDF8599B_1
Product data sheet
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Rev. 01 — 29 July 2009
7 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
The value of the resistor Rosc sets the clock frequency based on Equation 1:
9
12.45 × 10
f osc = ---------------------------- [ Hz ]
R osc
(1)
001aak224
50
Rosc
(kΩ)
40
30
20
10
0
300
Fig 4.
350
400
450
500
fosc (kHz)
Clock frequency as a function of Rosc
OSCSET
TDF8599B
Rosc
Cosc
OSCSET
OSCSET
TDF8599B
TDF8599B
OSCIO
OSCIO
OSCIO
Master
fosc
R
Slave 1
Slave 2
001aak218
Fig 5.
Master and slave configuration
In Master mode, Spread spectrum mode and frequency hopping can be enabled. In Slave
mode, phase staggering and phase lock operation can be selected. An external clock can
be used as the master-clock on pin OSCIO of the slave devices. When using an external
clock, it must remain active during the shutdown sequence to ensure that all devices are
switched off and able to enter the off state as described in Section 8.2 on page 6.
In Slave mode, an internal watchdog timer on pin OSCIO is triggered when the TDF8599B
is switched off by pulling down pin EN. If the external clock fails, the watchdog timer forces
the TDF8599B to switch off.
8.3.2 Spread spectrum mode (Master mode)
Spread spectrum mode is a technique of modulating the oscillator frequency with a slowly
varying signal to broaden the switching spectrum, thereby reducing the spectral density of
the EMI. Connecting a capacitor (CSSM) to pin SSM enables Spread spectrum mode (see
Figure 6). When pin SSM is connected to pin AGND, Spread spectrum mode is disabled.
TDF8599B_1
Product data sheet
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Rev. 01 — 29 July 2009
8 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
The capacitor on pin SSM (CSSM) sets the spreading frequency when Spread spectrum
mode is active. The current (ISSM) flowing in and out of pin SSM is typically 5 µA. This
gives a triangular voltage on pin SSM that sweeps around the voltage set by pin OSCSET
± 5 %. The voltage on pin SSM is used to modulate the oscillator frequency.
The spread spectrum frequency (fSSM) can be calculated using Equation 2:
I SSM
f SSM = ------------------------------------------------------ [ Hz ]
2 × C SSM × V 1 × 10 %
(2)
where the voltage on pin OSCSET = V1 and is calculated as 100 µA × Rosc (V) with
ISSM = 5 µA.
100 µA
100 µA
OSCSET
Rosc
OSCSET
Cosc
Cosc
Rosc
5 µA
ISSM
SSM
SSM
CSSM
001aai773
001aai774
a. Off
Fig 6.
b. On
Spread spectrum mode
The frequency swings between 0.95 × fosc and 1.05 × fosc; see Figure 7.
OSCIO
max(V)
SSM
min(V)
t (ms)
001aai775
Fig 7.
Spread spectrum operation in Master mode
8.3.3 Frequency hopping (Master mode)
Frequency hopping is a technique used to change the oscillator frequency for AM tuner
compatibility. In Master mode, the resistor connected between pins OSCSET and AGND
sets the oscillator frequency (fosc). In I2C-bus mode, this frequency can be varied by
± 10 %. Set bit IB1[D4] to logic 1 and bit IB1[D3] to either logic 0 (0.9 × fosc) or logic 1
(1.1 × fosc).
TDF8599B_1
Product data sheet
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Rev. 01 — 29 July 2009
9 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
8.3.4 Phase lock operation (Slave mode)
In Slave mode, Phase-Locked Loop (PLL) operation can be used to reduce the jitter effect
of the external oscillator signal connected to pin OSCIO. Phase lock operation is also
needed to enable phase staggering, see Section 8.4.2 on page 13. Phase lock operation
is enabled when the oscillator is in Slave mode by connecting two capacitors (CPLL_s and
CPLL_p) and a resistor (RPLL) between pin SSM and pin AGND (see Figure 8). Connecting
pin SSM to pin AGND disables phase lock operation and causes the slave to directly use
the external oscillator signal. Values for CPLL_s, CPLL_p and RPLL depend on the desired
loop bandwidth (BPLL) of the PLL. RPLL is given by: RPLL = 8.4 × BPLL Ω. The
corresponding values for CPLL_s and CPLL_p are given by Equation 3 and Equation 4:
0.032
C PLL_p = ------------------------------- [ F ]
R PLL × B PLL
(3)
Remark: CPLL_p is only needed when 1⁄4 π phase shift is selected. See Section 8.4.2 for
more detailed information.
0.8
C PLL_s = ------------------------------- [ F ]
R PLL × B PLL
(4)
When pin OSCIO is connected to a clock-master with Spread spectrum mode enabled,
the PLL loop bandwidth BPLL should be 100 × fSSM.
100 µA
OSCSET
100 µA
OSCSET
PLL
PLL
SSM
CPLL_s
SSM
RPLL
001aai776
CPLL_p(1)
001aai777
(1) Only needed when 1⁄4 π phase shift is
selected.
a. Off
Fig 8.
b. On
Phase lock operation
Table 7 lists all oscillator modes.
Table 7.
Oscillator modes
OSCSET pin
OSCIO pin
SSM pin
Oscillator modes
Rosc > 26 kΩ
output
CSSM to pin AGND
master, spread spectrum
Rosc > 26 kΩ
output
shorted to pin AGND
master, no spread spectrum
Rosc = 0 Ω
input
CPLL + RPLL to pin AGND
slave, PLL enabled
Rosc = 0 Ω
input
shorted to pin AGND
slave, PLL disabled
TDF8599B_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 29 July 2009
10 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
8.4 Operation mode selection
Pin MOD is used to select specific operating modes. The resistor (RMOD) connected
between pins MOD and AGND together with the non-I2C-bus/I2C-bus mode determine the
operating mode (see Table 8). The mode of operation depends on whether non-I2C-bus
mode or I2C-bus mode is active. This in turn is determined by the resistor value connected
between pins ADS and AGND.
In non-I2C-bus mode, pin MOD is used to select:
• AD or BD modulation (see Section 8.4.1).
• 1⁄2 π phase shift when oscillator is used in Slave mode (see Section 8.4.2).
• Parallel mode operation (see Section 8.4.3).
In I2C-bus mode, pin MOD can only select Parallel mode. In addition, the modulation
mode and phase shift are programmed using I2C-bus commands.
Table 8.
RMOD (kΩ)
Operation mode selection with the MOD pin
I2C-bus mode[1]
Non-I2C-bus mode[2]
0 (short to AGND) Stereo mode
AD modulation: no phase shift in Slave mode
4.7
BD modulation: no phase shift in Slave mode
13
AD modulation: 1⁄2 π phase shift in Slave mode
Parallel mode[3]
33
BD modulation: 1⁄2 π phase shift in Slave mode
100
AD modulation: no phase shift in Slave mode
∞ (open)
BD modulation: no phase shift in Slave mode
[1]
RADS ≥ 4.7 kΩ; See Table 13 on page 23.
[2]
RADS = 0 Ω; pin ADS is short circuited to pin AGND.
[3]
See Section 8.4.3 on page 14 for more detailed information.
In I2C-bus mode, pin MOD is latched using the I2C-bus command IB3[D7] = 1. This avoids
amplifier switching interference generating incorrect information on pin MOD.
In non-I2C-bus mode or when IB3[D7] = 0, the information on pin MOD is latched when
one of the TDF8599B’s outputs starts switching.
8.4.1 Modulation mode
In non-I2C-bus mode, pin MOD is used to select either AD or BD modulation mode (see
Table 8). In I2C-bus mode, the modulation mode is selected using an I2C-bus command.
• AD modulation mode: the bridge halves switch in opposite phase.
• BD modulation mode: the bridge halves switch in phase but the input signal for the
modulators is inverted.
Figure 10 and Figure 11 show simplified representations of AD and BD modulation.
TDF8599B_1
Product data sheet
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Rev. 01 — 29 July 2009
11 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
+VP
INxP
+VP
OUTP OUTN
INxN
AD
BD
001aai778
Fig 9.
AD/BD modulation switching circuit
INxP
OUTxP
001aai779
a. Bridge half 1.
INxN
OUTxN
001aai780
b. Bridge half 2 switched in the opposite phase to bridge half 1.
Fig 10. AD modulation
TDF8599B_1
Product data sheet
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Rev. 01 — 29 July 2009
12 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
INxP
OUTxP
OUTxP, OUTxN
001aai781
a. Phase switching cycle.
INxN
OUTxN
001aai782
b. Inverted signal to the modulator.
Fig 11. BD modulation
8.4.2 Phase staggering (Slave mode)
In Slave mode with phase lock operation enabled, a phase shift with respect to the
incoming clock signal can be selected to distribute the switching moments over time. In
non-I2C-bus mode, 1⁄2 π phase shift can be programmed using pin MOD. In I2C-bus mode,
five different phase shifts (1⁄4 π, 1⁄3 π, 1⁄2 π, 2⁄3 π, 3⁄4 π) can be selected using the I2C-bus
bits (IB3[D1:D3]). See Table 8 for selection of the phase shift in non-I2C-bus mode with pin
MOD. An additional capacitor must be connected to pin SSM when 1⁄4 π phase shift is
used (see Figure 8). An example of using 1⁄2 π phase shift for BD modulation is shown in
Figure 12.
TDF8599B_1
Product data sheet
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Rev. 01 — 29 July 2009
13 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
OUT1P
phase
0
OUT1N
master
OUT2P
π
OUT2N
OUT1P
1π
2
OUT1N
slave
OUT2P
2π
3
OUT2N
001aai783
Fig 12. Master and slave operation with 1⁄2 π phase shift
8.4.3 Parallel mode
In Parallel mode; the two output stages operate in parallel to enlarge the drive capability.
The inputs and outputs for Parallel mode must be connected on the Printed-Circuit Board
(PCB) as shown in Figure 13. The parallel connection can be made after the output filter,
as shown in Figure 13 or directly to the device output pins (OUTxP and OUTxN).
+
−
IN1P
OUT1N
IN1N
OUT1P
−
IN2N
TDF8599B
IN2P
OUT2P
MOD
OUT2N
+
RMOD
001aak219
Fig 13. Parallel mode
In Parallel mode, the channel 1 I2C-bus bits can be programmed using the I2C-bus.
8.5 Protection
The TDF8599B includes a range of built-in protection functions. How the TDF8599B
manages the various possible fault conditions for each protection is described in the
following sections:
TDF8599B_1
Product data sheet
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Rev. 01 — 29 July 2009
14 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
Table 9.
Overview of protection types
Protection type
Reference
Thermal foldback
Section 8.5.1
Overtemperature
Section 8.5.2
Overcurrent
Section 8.5.3
Window
Section 8.5.4
DC Offset
Section 8.5.5
Undervoltage
Section 8.5.6
Overvoltage
Section 8.5.6
8.5.1 Thermal foldback
Thermal Foldback Protection (TFP) is activated when the average junction temperature
exceeds the threshold level (145 °C). TFP decreases amplifier gain such that the
combination of power dissipation and Rth(j-a) create a junction temperature around the
threshold level. The device will not completely switch off but remains operational at the
lower output power levels. If the average junction temperature continues to increase, a
second built-in temperature protection threshold level shuts down the amplifier completely.
8.5.2 Overtemperature protection
If the average junction temperature (Tj) > 160 °C, OverTemperature Protection (OTP) is
activated and the power stage shuts down immediately.
8.5.3 Overcurrent protection
OverCurrent Protection (OCP) is activated when the output current exceeds the maximum
output current of 8 A. OCP regulates the output voltage such that the maximum output
current is limited to 8 A. The amplifier outputs keep switching and the amplifier is NOT
shutdown completely. This is called current limiting.
OCP also detects when the loudspeaker terminals are short circuited or one of the
amplifier’s demodulated outputs is short circuited to one of the supply lines. In either case,
the shorted channel(s) are switched off.
The amplifier can distinguish between loudspeaker impedance drops and a low-ohmic
short across the load or one of the supply lines. This impedance threshold depends on the
supply voltage used. When a short is made across the load causing the impedance to
drop below the threshold level, the shorted channel(s) are switched off. They try to restart
every 50 ms. If the short circuit condition is still present after 50 ms, the cycle repeats. The
average power dissipation will be low because of this reduced duty cycle.
When a channel is switched off due to a short circuit on one of the supply lines, Window
Protection (WP) is activated. WP ensures the amplifier does not start-up after 50 ms until
the supply line short circuit is removed.
8.5.4 Window protection
Window Protection (WP) checks the PWM output voltage before switching from Standby
mode to Mute mode (with both outputs switching) and is activated as follows:
TDF8599B_1
Product data sheet
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Rev. 01 — 29 July 2009
15 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
• During the start-up sequence:
– When the TDF8599B is switched from standby to mute (td(stb-mute)). When a short
circuit on one of the output terminals (i.e. between VP or GND) is detected, the
start-up procedure is interrupted and the TDF8599B waits for open circuit outputs.
No large currents flow in the event of a short circuit to the supply lines because the
check is performed before the power stages are enabled.
• During operation:
–
A short to one of the supply lines activates OCP causing the amplifier channel to
shutdown. After 50 ms the amplifier channel restarts and WP is activated.
However, the corresponding amplifier channel will not start-up until the supply line
short circuit has been removed.
8.5.5 DC offset protection
DC offset Protection (DCP) is activated when the DC content in the demodulated output
voltage exceeds a set threshold (typically 2 V). DCP is active in both Mute mode and
Operating mode. Figure 14 shows how false triggering of the DCP by low frequencies in
the audio signal is prevented using the external capacitor (CF) to generate a cut-off
frequency.
OUT1P
OUT1N
OUT2P
OUT2N
V to I
Vref
V to I
50 kΩ
IB1[D6]
IB2[D6]
DCP
CF
DIAG
IB1[D7]
DB1[D2]
S
Q
S4
IB2[D7]
S3
switch off channels
001aak078
Fig 14. DC offset protection and diagnostic output
In I2C-bus mode, DC offsets generate a voltage shift around the bias voltage. When the
voltage shift exceeds threshold values, the offset alarm bit DB1[D2] is set and if bit
IB1[D7] is not set, diagnostic information is also given. Any detected offset shuts down
both channels when bit IB2[D7] is not set. To restart the TDF8599B in I2C-bus mode, pin
EN must be toggled or DCP disabled by connecting pin DCP to pin AGND.
TDF8599B_1
Product data sheet
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Rev. 01 — 29 July 2009
16 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
In non-I2C-bus mode, when an offset is detected, DCP always gives diagnostic
information on pin DIAG and shuts down both channels.
Connecting a capacitor between pins DCP and AGND enables DC offset protection.
Connecting pin DCP to pin AGND disables DCP in both I2C-bus and non-I2C-bus mode.
8.5.6 Supply voltages
UnderVoltage Protection (UVP) is activated when the supply voltage drops below the UVP
threshold. UVP triggers the UVP circuit causing the system to first mute and then stop
switching. When the supply voltage rises above the threshold level, the system restarts.
OverVoltage Protection (OVP) is activated when the supply voltage exceeds the OVP
threshold. The OVP (or load dump) circuit is activated and the power stages are
shutdown.
An overview of all protection circuits and the amplifier states is given in Table 10.
8.5.7 Overview of protection circuits and amplifier states
Table 10.
Overview of TDF8599B protection circuits and amplifier states
Protection circuit name
Amplifier state
Complete
shutdown
Channel
shutdown
Restart[1]
TFP
N[2]
N[2]
Y[3]
OTP
Y
N
Y[3]
OCP
N
Y
Y[4]
WP
N
Y
Y
DCP
Y
N
N[5]
UVP
Y
N
Y[6]
OVP
Y
N
Y
[1]
When fault is removed.
[2]
Amplifier gain depends on the junction temperature and size of the heat sink.
[3]
TFP influences restart timing depending on heat sink size.
[4]
Shorted load causes a restart of the channel every 50 ms.
[5]
Latched protection is reset by toggling pin EN or by disabling DCP in I2C-bus mode.
[6]
In I2C-bus mode deep supply voltage drops will cause a Power-On Reset (POR). The restart requires an
I2C-bus command.
8.6 Diagnostic output
8.6.1 Diagnostic table
The diagnostic information for I2C-bus mode and non-I2C-bus mode is shown in Table 11.
The instruction bitmap and data bytes are described in Table 14 and Table 15.
Pins DIAG and CLIP have an open-drain output which must have an external pull-up
resistor connected to an external voltage. Pins CLIP and DIAG can show both fixed and
I2C-bus selectable information.
TDF8599B_1
Product data sheet
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Rev. 01 — 29 July 2009
17 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
Pin DIAG goes LOW when a short circuit to one of the amplifier outputs occurs. The
microprocessor reads the failure information using the I2C-bus. The I2C-bus bits are set
for a short circuit. These bits can be reset with the I2C-bus read command.
Even after the short has been removed, the microprocessor knows what was wrong after
reading the I2C-bus. Old information is read when a single I2C-bus read command is
used. To read the current information, two read commands must be sent, one after
another.
When selected, pin DIAG gives the current diagnostic information. Pin DIAG is released
instantly when the failure is removed, independent of the I2C-bus latches.
Table 11.
Available data on pins DIAG and CLIP
I2C-bus mode
Non-I2C-bus mode
Pin DIAG
Pin CLIP
Pin DIAG
Pin CLIP
Power-on reset
yes
yes
yes
yes
UVP or OVP
yes
no
yes
no
Diagnostic
Clip detection
no
selectable
no
yes
Temperature pre-warning
no
selectable
no
yes
OCP/WP
yes
no
yes
no
DCP
selectable
no
yes
no
OTP
yes
no
yes
no
When OCP is triggered, the open-drain DIAG output is activated. The diagnostic output
signal during different short circuit conditions is illustrated in Figure 15.
shorted load
short to GND or VP line
AMPLIFIER
RESTART
NO
RESTART
pull up V
AGND = 0 V
≈50 ms ≈50 ms ≈50 ms
001aai786
Fig 15. Diagnostic output for short circuit conditions
8.6.2 Load identification (I2C-bus mode only)
8.6.2.1
DC load detection
DC load detection is only available in I2C-bus mode and is controlled using bit IB2[D2].
The default setting is logic 0 for bit IB2[D2] which disables DC load detection. DC load
detection is enabled when bit IB2[D2] = 1. Load detection takes place before the class-D
amplifier output stage starts switching in Mute mode and the start-up time from Standby
mode to Mute mode is increased by tdet(DCload) (see Figure 16).
TDF8599B_1
Product data sheet
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Rev. 01 — 29 July 2009
18 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
VP
DRIVER
HIGH
B
OUTN
PWM
CONTROL
DRIVER
LOW
PGND1
RL
VP
DRIVER
HIGH
OUTP
PWM
CONTROL
DRIVER
LOW
PGND2
001aai787
Fig 16. DC load detection circuit
out (V)
out−
out+
t (s)
tdet(DCload)
td(stb-mute)
001aai788
Fig 17. DC load detection procedure
The capacitor connected to pin SEL_MUTE (see Figure 3 on page 6) is used to create an
inaudible current test pulse, drawn from the positive amplifier output. The diagnostic
‘speaker load’ (or ‘open load’), based on the voltage difference between pins OUTxP and
OUTxN is shown in Figure 18.
SPEAKER LOAD
0Ω
OPEN LOAD
25 Ω
350 Ω
001aaj956
Fig 18. DC load detection limits
Remark: DC load detection identifies a short circuited speaker as a valid speaker load.
OCP detection, using byte DB1[D3] for channel 1 and byte DB2[D3] for channel 2,
performs diagnostics on shorted loads. However, the diagnostics are performed after the
DC load detection cycle has finished and once the amplifier is in Operating mode.
The result of the DC load detection is stored in bits DB1[D4] and DB2[D4].
TDF8599B_1
Product data sheet
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Rev. 01 — 29 July 2009
19 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
Table 12.
Interpretation of DC load detection bits
DC load bits DB1[D4] and DB2[D4]
OCP bits DB1[D3] and DB2[D3]
Description
0
0
speaker load
0
1
shorted load
1
0
open load
Remark: After DC load detection has been performed, the DC load valid bit DB1[D6] must
be set. The DC load data bits are only valid when bit DB1[D6] = 1. When DC load
detection is interrupted by a sudden large change in supply voltage (triggered by UVP or
OVP) or if the amplifier hangs up, the DC load valid bit is reset to DB1[D6] = 0. The DC
load detection enable bit IB2[D2] must be reset after the DC load protection cycle to
release any amplifier hang-up. Once the DC load detection cycle has finished, DC load
detection can be restarted by toggling the DC load detection enable bit IB2[D2]. However,
this can only be used if both amplifier channels have not been enabled with bit IB1[D1] or
bit IB2[D1]. See Section 8.6.2.2 “Recommended start-up sequence with DC load
detection enabled” for detailed information.
8.6.2.2
Recommended start-up sequence with DC load detection enabled
The flow diagram (Figure 19) illustrates the TDF8599B’s ability to perform a DC load
detection without starting the amplifiers. After a DC load detection cycle finishes without
setting the DC load valid bit DB1[D6], DC load detection is repeated (when bit IB2[D2] is
toggled).
To limit the maximum number of DC load detection cycle loops, a counter and limit have
been added. The loop exits after the predefined number of cycles (COUNTMAX), if the
DC load detection cycle finishes with an invalid detection.
Depending on the application needs, the invalid DC load detection cycle can be handled
as follows:
• the amplifier can be started without DC load detection
• the DC load detection loop can be executed again
TDF8599B_1
Product data sheet
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Rev. 01 — 29 July 2009
20 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
I2C-bus TX
startup
enable DC load
disable channel 1
disable channel 2
IB1[D0] = 1
IB2[D2] = 1
IB1[D1] = 1
IB2[D1] = 1
COUNT = 0
WAIT DC load
DB1[D4] = 1
DB2[D4] = 1
DB1[D6] = 1
IB1[D0] = 1
IB2[D2] = 1
IB1[D1] = 1
IB2[D1] = 1
I2C-bus RX
channel 1 open load
channel 2 open load
DC load valid
I2C-bus TX
startup
enable DC load
disable channel 1
disable channel 2
COUNT ≤ COUNTMAX
COUNT = COUNT + 1
YES
ERROR HANDLING
start amplifier
anyway
I2C-bus TX
IB1[D0] = 1
IB2[D2] = 0
IB1[D1] = 1
IB2[D1] = 1
DB1[D6] = 1
DC load valid
restart
DC load
NO
startup
disable DC load
disable channel 1
disable channel 2
NO
YES
IB1[D0] = 1
IB2[D2] = 0
IB1[D1] = 0
IB2[D1] = 0
I2C-bus TX
startup
disable DC load
enable channel 1
enable channel 2
001aaj061
Fig 19. Recommended start-up sequence with DC load detection enabled
8.6.2.3
AC load detection
AC load detection is only available in I2C-bus mode and is controlled using bit IB3[D4].
The default setting for bit IB3[D4] = 0 disables AC load detection. When AC load detection
is enabled (bit IB3[D4] = 1), the amplifier load current is measured and compared with a
reference level. Pin CLIP is activated when this threshold is reached. Using this
information, AC load detection can be performed using a predetermined input signal
frequency and level. The frequency and signal level should be chosen so that the load
current exceeds the programmed current threshold when the AC coupled load (tweeter) is
present.
8.6.2.4
CLIP detection
CLIP detection gives information for clip levels ≥ 0.2 %. Pin CLIP is used as the output for
the clip detection circuitry on both channel 1 and channel 2. Setting either bit IB1[D5] or bit
IB2[D5] to logic 0 defines which channel reports clip information on the CLIP pin.
TDF8599B_1
Product data sheet
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Rev. 01 — 29 July 2009
21 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
8.6.3 Start-up and shutdown sequence
To prevent switch on or switch off ‘pop noise’, a capacitor (CSVRR) connected to pin SVRR
is used to smooth start-up and shutdown. During start-up and shutdown, the output
voltage tracks the voltage on pin SVRR. Increasing CSVRR results in a longer start-up and
shutdown time. Enhanced pop noise performance is achieved by muting the amplifier until
the SVRR voltage reaches its final value and the outputs start switching. The value of
capacitor connected to pin SEL_MUTE (CON) determines the unmute and mute timing.
The voltage on pin SEL_MUTE determines the amplifier gain. Increasing CON increases
the unmute and mute times. In addition, a larger CON value increases the DC load
detection cycle.
When the amplifier is switched off with an I2C-bus command or by pulling pin EN LOW, the
amplifier is first muted and then capacitor (CSVRR) is discharged.
In Slave mode, the device enters the off state immediately after capacitor (CSVRR) is
discharged. In Master mode, the clock is kept active by an additional delay (td(2)) of
approximately 50 ms to allow slave devices to enter the off state.
When an external clock is connected to pin OSCIO (in Slave mode), the clock must
remain active during the shutdown sequence for delay (td(1)) to ensure that the slaved
TDF8599B devices are able to enter the off state.
VDDA
DIAG
td(1)
EN
ACGND
td(3)
IB1[D0] and
IB2[D0] = 0
td(mute-fgain)
mute delay
td(2)
SEL_MUTE
SVRR
twake
td(stb-mute)
tdet(DCload)
OUTn
001aai790
(1) Shutdown hold delay.
(2) Master mode shutdown delay.
(3) Shutdown delay.
Fig 20. Start-up and shutdown timing in I2C-bus mode with DC load detection
TDF8599B_1
Product data sheet
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Rev. 01 — 29 July 2009
22 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
VDDA
DIAG
td(2)
td(1)
EN
ACGND
td(mute-fgain)
td(3)
SEL_MUTE
SVRR
td(stb-mute)
OUTn
001aai791
(1) Shutdown hold delay.
(2) Shutdown delay.
(3) Master mode shutdown delay.
Fig 21. Start-up and shutdown timing in non-I2C-bus mode
9. I2C-bus specification
TDF8599B address with hardware address select.
Table 13.
I2C-bus write address selection using pins MOD and ADS
RADS[1] (kΩ)
RMOD[1] (kΩ)
R/W
Stereo mode
Parallel mode
0[2]
4.7
13
33
100
open
Open
58h
68h
78h
58h
68h
78h
1 = Read from TDF8599B
100
56h
66h
76h
56h
66h
76h
0 = Write to TDF8599B
33
54h
64h
74h
54h
64h
74h
13
52h
62h
72h
52h
62h
72h
4.7
50h
60h
70h
50h
60h
70h
0[2]
non-I2C-bus
mode select
[1]
Required external resistor accuracy is 1 %.
[2]
Short circuited to ground.
In I2C-bus mode, pins MOD and ADS can be latched using the I2C-bus command
IB3[D7] = 1. This avoids disturbances from amplifier outputs of other TDF8599B devices
in the same application switching and generating incorrect information on the MOD and
ADS pins.
TDF8599B_1
Product data sheet
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Rev. 01 — 29 July 2009
23 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
In non-I2C mode or when IB3[D7] = 0, the information on the MOD and ADS pins is
latched when one of the TDF8599B’s outputs starts switching.
SCL
SCL
SDA
SDA
Mµp
START
Mµp
STOP
SLAVE
(1)
SLAVE
(1)
(2)
001aai793
001aai792
(1) When SCL is HIGH, SDA changes to form the start or
stop condition.
Fig 22.
I2C-bus
(1) SDA is allowed to change.
(2) All data bits must be valid on the positive edges of SCL.
start and stop conditions
SCL
1
MSB − 1
MSB
SDA
2
Mµp START
Fig 23. Data bits sent from Master microprocessor
(Mµp)
7
8
LSB + 1
ADDRESS
9
ACK
1
2
MSB − 1
MSB
WRITE
SLAVE
7
LSB + 1
8
LSB
9
ACK
WRITE DATA
STOP
ACK(1)
ACK
001aai794
(1) To stop the transfer after the last acknowledge a stop condition must be generated.
Fig 24. I2C-bus write
SCL
1
MSB
SDA
Mµp
START
SLAVE
2
7
MSB − 1
LSB + 1
ADDRESS
8
9
ACK
1
MSB
2
7
MSB − 1
LSB + 1
8
9
LSB
ACK(1)
READ
ACKNOWLEDGE
STOP
READ DATA
001aai795
(1) To stop the transfer, the last byte must not be acknowledged (SDA is HIGH) and a stop condition must be generated.
Fig 25. I2C-bus read
TDF8599B_1
Product data sheet
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Rev. 01 — 29 July 2009
24 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
9.1 Instruction bytes
If R/W bit = 0, the TDF8599B expects three instruction bytes: IB1, IB2 and IB3. After a
power-on reset, all unspecified instruction bits must be set to zero.
Table 14.
Instruction byte descriptions
Bit
Value
Instruction byte IB1
Instruction byte IB2
Instruction byte IB3
D7
0
offset detection on pin DIAG
offset protection on
latch information on pins
ADS and MOD when the
amplifier starts switching
1
no offset detection on pin DIAG
offset protection off
latch information on pins
ADS and MOD; see
Section 9 on page 23
0
channel 1 offset monitoring on
channel 2 offset monitoring on
-
1
channel 1 offset monitoring off
channel 2 offset monitoring off
-
0
channel 1 clip detect on pin CLIP
channel 2 clip detect on pin CLIP
-
1
channel 1 no clip detect on pin CLIP
channel 2 no clip detect on pin CLIP
-
0
disable frequency hopping
thermal pre-warning on pin CLIP
disable AC load detection
D6
D5
D4
D3
D2
D1
D0
Description
hopping[1]
1
enable frequency
no thermal pre warning on pin CLIP
enable AC load detection
0
oscillator frequency as set with
Rosc − 10 %
temperature pre-warning at 140 °C
oscillator phase shift bits
IB3[D3] to IB3[D1][2]
1
oscillator frequency as set with
Rosc + 10 %
temperature pre-warning at 120 °C
0
-
DC-load detection disabled
1
-
DC-load detection enabled
0
channel 1 enabled
channel 2 enabled
1
channel 1 disabled
channel 2 disabled
0
TDF8599B in Standby mode
all channels operating
AD modulation
1
TDF8599B in Mute or Operating
modes[3]
all channels muted
BD modulation
[1]
See Section 8.3.3 on page 9 for information on IB1[D4] and IB[D3].
[2]
See Table 15 “Phase shift bit settings” for information on IB3[D3] to IB3[D1].
[3]
See Table 4 for information on IB1[D0] and IB2[D0].
Table 15.
Phase shift bit settings
D3
D2
D1
Phase
0
0
0
0
0
0
1
1⁄
4
π
0
1⁄
3
π
1
1⁄
2
π
π
π
0
0
1
1
1
0
0
2⁄
3
1
0
1
3⁄
4
TDF8599B_1
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TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
9.2 Data bytes
If R/W = 1, the TDF8599B sends two data bytes to the microprocessor (DB1 and DB2). All
short diagnostic and offset protection bits are latched. In addition, all bits are reset after a
read operation except the DC load detection bits (DBx[D4], DB1[D6]). The default setting
for all bits is logic 0.
In Parallel mode, the diagnostic information is stored in byte DB1.
Table 16.
Description of data bytes
Bit
Value
DB1 channel 1
DB2 channel 2
D7
0
at least 1 instruction bit set to logic 1
below maximum temperature
1
all instruction bits are set to logic 0
maximum temperature protection
activated
D6
D5
D4
D3
D2
D1
D0
0
invalid DC load data
no temperature warning
1
valid DC load data
temperature pre-warning active
0
no overvoltage
no undervoltage
1
overvoltage protection active
undervoltage protection active
0
speaker load channel 1
speaker load channel 2
1
open load channel 1
open load channel 2
0
no shorted load channel 1
no shorted load channel 2
1
shorted load channel 1
shorted load channel 2
0
no offset
reserved
1
offset detected
reserved
0
no short to VP channel 1
no short to VP channel 2
1
short to VP channel 1
short to VP channel 2
0
no short to ground channel 1
no short to ground channel 2
1
short to ground channel 1
short to ground channel 2
Data byte DB1[D7] indicates whether the instruction bits have been set to logic 0. In
principle, DB1[D7] is set after a POR or when all the instruction bits are programmed to
logic 0. Pin DIAG is driven HIGH when bit DB1[D7] = 1.
TDF8599B_1
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26 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
10. Limiting values
Table 17. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VP
supply voltage
Operating mode
-
29
V
−1
+50
V
-
50
V
8
-
A
stereo mode
-
20
A
parallel mode
-
13
A
pins SCL, SDA, ADS,
MOD, SSM, OSCIO, EN
and SEL_MUTE
0
5.5
V
pins IN1N, IN1P, IN2N
and IN2P
0
10
V
off state
[1]
load dump; duration
50 ms; tr > 2.5 ms
IORM
repetitive peak output
current
maximum output current
limiting
IOM
peak output current
maximum; non-repetitive
input voltage
Vi
[2]
Vo
output voltage
pins DIAG and CLIP
0
10
V
RESR
equivalent series resistance
as seen between pins VP
and PGNDn
-
350
mΩ
Tj
junction temperature
-
150
°C
Tstg
storage temperature
−55
+150
°C
Tamb
ambient temperature
−40
+85
°C
-
2000
V
-
500
V
-
750
V
0
VP
V
VESD
electrostatic discharge
voltage
HBM
[3]
C = 100 pF;
Rs = 1.5 kΩ
CDM
[4]
non-corner pins
corner pins
V(prot)
protection voltage
AC and DC short circuit
voltage of output pins
across load and to
supply and ground
[1]
Floating condition assumed for outputs.
[2]
Current limiting concept.
[3]
Human Body Model (HBM).
[4]
Charged-Device Model (CDM).
[5]
The output pins are defined as the output pins of the filter connected between the TDF8599B output pins
and the load.
TDF8599B_1
Product data sheet
[5]
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 29 July 2009
27 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
11. Thermal characteristics
Table 18.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-a)
thermal resistance from junction
to ambient
in free air
35
K/W
Rth(j-c)
thermal resistance from junction
to case
1
K/W
12. Static characteristics
Table 19. Static characteristics
VP = VDDA = 14.4 V; fosc = 320 kHz; −40 °C < Tamb < +85 °C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
8
14.4
24
V
Supply
VP
supply voltage
IP
supply current
off state; Tj ≤ 85 °C; VP = 14.4 V
-
2
10
µA
Iq(tot)
total quiescent current
Operating mode; no load,
snubbers and filter connected
-
90
120
mA
Tj = 25 °C
-
140
150
mΩ
Tj = 100 °C
-
190
205
mΩ
Series resistance output switches
RDSon
drain-source on-state
resistance
power switch;
I2C-bus interface: pins SCL and SDA
VIL
LOW-level input voltage
0
-
1.5
V
VIH
HIGH-level input voltage
2.3
-
5.5
V
VOL
LOW-level output voltage
0
-
0.4
V
pin SDA; Iload = 5 mA
Address, phase shift and modulation mode select: pins ADS and MOD
Vi
Ii
input voltage
input current
pins not connected
[1]
1.5
2
2.7
V
pins shorted to GND
[1]
80
105
160
µA
0
-
0.8
V
2
-
5
V
pin EN; Mute mode or Operating
mode; non-I2C-bus mode
2
-
5
V
pin SEL_MUTE; Mute mode;
voltage on pin EN > 2 V
0
-
0.8
V
pin SEL_MUTE; Operating mode;
voltage on pin EN > 2 V
3
-
5
V
pin EN; 2.5 V
-
-
5
µA
pin SEL_MUTE; Operating mode;
0.8 V
-
-
50
µA
Enable and SEL_MUTE input: pins EN and SEL_MUTE
Vi
input voltage
pin EN; off state
pin EN; Standby mode;
mode
Ii
input current
TDF8599B_1
Product data sheet
I2C-bus
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 29 July 2009
28 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
Table 19. Static characteristics …continued
VP = VDDA = 14.4 V; fosc = 320 kHz; −40 °C < Tamb < +85 °C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
0.2
-
%
1
2
3
V
Diagnostic output
THDclip
total harmonic distortion clip
detection level
Vth(offset)
threshold voltage for offset
detection
VOL
LOW-level output voltage
DIAG or CLIP pins activated;
Io = 1 mA
-
-
0.3
V
IL
leakage current
DIAG and CLIP pins; diagnostic
not activated
-
-
50
µA
-
2.45
-
V
input ACGND pin
2
2.45
3
V
half supply reference SVRR pin
6.9
7.2
7.5
V
-
-
25
mV
-
-
70
mV
stabilizer output in Mute mode and
Operating mode
8
10
12
V
undervoltage; amplifier is muted
6.8
7.2
8
V
overvoltage; load dump protection
is activated
26.2
27
-
V
VP that a POR occurs at
3
3.7
4.6
V
current limiting concept
8
9.5
11
A
155
-
160
°C
[2][3]
Audio inputs; pins IN1N, IN1P, IN2N and IN2P
Vi
input voltage
SVRR voltage and ACGND input bias voltage in Mute and Operating modes
Vref
reference voltage
Amplifier outputs; pins OUT1N, OUT1P, OUT2N and OUT2P
VO(offset)
output offset voltage
BTL; Mute mode
BTL; Operating mode
[4][6]
Stabilizer output; pins VSTAB1 and VSTAB2
Vo
output voltage
Voltage protections
V(prot)
protection voltage
Current protection
IO(ocp)
overcurrent protection output
current
Temperature protection
Tprot
protection temperature
Tact(th_fold)
thermal foldback activation
temperature
gain = −1 dB
140
-
150
°C
Tj(AV)(warn1)
average junction temperature
for pre-warning 1
IB2[D3] = 0; non-I2C-bus mode
-
140
150
°C
Tj(AV)(warn2)
average junction temperature
for pre-warning 2
IB2[D3] = 1
-
120
130
°C
DC load detection levels: I2C-bus mode only[7]
Zth(load)
load detection threshold
impedance
for normal speaker load;
DB1[D4] = 0; DB2[D4] = 0
-
-
25
Ω
Zth(open)
open load detection threshold
impedance
DB1[D4] = 1; DB2[D4] = 1
350
-
-
Ω
250
500
700
mA
AC load detection levels: I2C-bus mode only
Ith(o)det(load)AC
AC load detection output
threshold current
TDF8599B_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 29 July 2009
29 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
Table 19. Static characteristics …continued
VP = VDDA = 14.4 V; fosc = 320 kHz; −40 °C < Tamb < +85 °C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Start-up/shut-down/mute timing
twake
wake-up time
on pin EN before first I2C-bus
transmission is recognized
[5]
-
-
500
µs
tdet(DCload)
DC load detection time
CON = 470 nF
[5]
-
380
-
ms
td(stb-mute)
delay time from standby to
mute
measured from amplifier enabling
to start of unmute (no DC load
detection); CSVRR = 47 µF
CON = 470 nF
-
140
-
ms
td(mute-fgain)
mute to full gain delay time
CON = 470 nF
-
15
-
ms
td
delay time
shutdown delay time from EN pin
LOW to SVRR LOW; voltage on
pin SVRR < 0.1 V; CSVRR = 47 µF
200
350
550
ms
shutdown delay time from EN pin
LOW to SVRR LOW; voltage on
pin SVRR < 0.1 V; CSVRR = 47 µF;
VP = 35 V
300
400
700
ms
shutdown hold delay time from pin
EN LOW to ACGND LOW; voltage
on pin ACGND < 0.1 V; Master
mode
-
370
-
ms
hold delay in Master mode to allow
slaved devices to shutdown
fosc = 320 kHz
-
50
-
ms
stereo mode
1.6
4
-
Ω
parallel mode
0.8
-
-
Ω
[6]
Speaker load impedance
load resistance
RL
at supply voltage equal to or below
24 V
[1]
Required resistor accuracy for pins ADS and MOD is 1 %; see Section 9 on page 23.
[2]
Maximum leakage current from DCP pin to ground = 3 µA.
[3]
The output offset values can be either positive or negative. The Vth(offset) limit values (excluding Typ) are the valid absolute values.
[4]
DC output offset voltage is applied to the output gradually during the transition between Mute mode and Operating mode.
[5]
I2C-bus mode only.
[6]
The transition time between Mute mode and Operating mode is determined by the time constant on the SEL_MUTE pin.
[7]
The DC load valid bit DB1[D6] must be used; Section 8.6.2.1 on page 18. The DC load enable bit IB2[D2] must be reset after each load
detection cycle to prevent amplifier hang-up incidents.
TDF8599B_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 29 July 2009
30 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
12.1 Switching characteristics
Table 20. Switching characteristics
VP = VDDA = 14.4 V; −40 °C < Tamb < +85 °C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
external clock frequency;
Rosc = 39 kΩ
-
320
-
kHz
internal fixed frequency and Spread
spectrum mode frequency based on
the resistor value connected to pin
OSCSET for the master setting
300
-
450
kHz
Internal oscillator
fosc
oscillator frequency
Master/slave setting (OSCIO pin)
Rosc
oscillator resistance
resistor value on pin OSCSET;
master setting
26
39
49
kΩ
VOL
LOW-level output voltage
output
-
-
0.8
V
VOH
HIGH-level output voltage
output
4
-
-
V
VIL
LOW-level input voltage
input
-
-
0.8
V
VIH
HIGH-level input voltage
input
4
-
-
V
ftrack
tracking frequency
PLL enabled
300
-
500
kHz
Nslave
number of slaves
driven by one master
12
-
-
Spread spectrum mode setting
∆fosc
oscillator frequency variation
between maximum and minimum
values; Spread spectrum mode
activated
-
10
-
%
fsw
switching frequency
Spread spectrum mode activated;
CSSM = 1 µF
-
7
-
Hz
change positive; IB1[D4] = 1;
IB1[D3] = 1
-
fosc + 10 % -
kHz
change negative; IB1[D4] = 1;
IB1[D3] = 0
-
fosc − 10 % -
kHz
PWM output; Io = 0 A
-
10
ns
Frequency hopping
fosc(int)
internal oscillator frequency
Timing
tr
rise time
tf
fall time
PWM output; Io = 0 A
-
10
-
ns
tw(min)
minimum pulse width
Io = 0 A
-
80
-
ns
TDF8599B_1
Product data sheet
-
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Rev. 01 — 29 July 2009
31 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
13. Dynamic characteristics
Table 21. Dynamic characteristics
VP = VDDA = 14.4 V; RL = 4 Ω; fi = 1 kHz; fosc = 320 kHz; Rs(L) < 0.04 Ω[1]; −40 °C < Tamb < +85 °C; Stereo mode; unless
otherwise specified.
Symbol
Parameter
output power
Po
Conditions
Min
Typ
Max
Unit
VP = 14.4 V; THD = 1 %; RL = 4 Ω
18
20
-
W
VP = 14.4 V; THD = 10 %; RL = 4 Ω
24
26
-
W
square wave (EIAJ); RL = 4 Ω
-
40
-
W
Stereo mode:
[2]
VP = 24 V; THD = 10 %; RL = 4 Ω
-
70
-
W
VP = 14.4 V; THD = 1 %; RL = 2 Ω
29
32
-
W
VP = 14.4 V; THD = 10 %; RL = 2 Ω
39
43
-
W
-
70
-
W
VP = 14.4 V; THD = 10 %; RL = 1 Ω
-
85
-
W
VP = 24 V; THD = 10 %; RL = 2 Ω
-
138
-
W
square wave (EIAJ); RL = 2 Ω
Parallel mode:
[2]
VP = 24 V; THD = 1 %; RL = 1 Ω
THD
total harmonic distortion
135
150
-
W
fi = 1 kHz; Po = 1 W
[3]
-
0.02
0.1
%
fi = 10 kHz; Po = 1 W
[3]
-
0.02
0.1
%
25
26
27
dB
-
70
-
dB
Gv(cl)
closed-loop voltage gain
αcs
channel separation
fi = 1 kHz; Po = 1 W
SVRR
supply voltage rejection ratio
Operating mode
fripple = 100 Hz
[4]
60
70
-
dB
fripple = 1 kHz
[4]
60
70
-
dB
[4]
60
70
-
dB
[4]
-
90
-
dB
60
100
150
kΩ
Mute mode
fripple = 1 kHz
off state and Standby mode
fripple = 1 kHz
|Zi(dif)|
differential input impedance
Vn(o)
output noise voltage
Operating mode
BD mode
[5]
-
60
77
µV
AD mode
[5]
-
100
140
µV
BD mode
[6]
-
25
32
µV
AD mode
[6]
-
85
110
µV
-
0
1
dB
66
-
-
dB
Mute mode
αbal(ch)
αmute
channel balance
[7]
mute attenuation
CMRR
common mode rejection ratio
Vi(cm) = 1 V RMS
65
80
-
dB
ηpo
output power efficiency
Po = 20 W
-
90
-
%
[1]
Rs(L) is the sum of the inductor series resistance from the low-pass LC filter in the application together with all resistance from PCB
traces or wiring between the output pin of the TDF8599B and the inductor to the measurement point. LC filter dimensioning is
L = 10 µH, C = 1 µF for 4 Ω load and L = 5 µH, C = 2.2 µF for 2 Ω load.
[2]
Output power is measured indirectly based on RDSon measurement.
TDF8599B_1
Product data sheet
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Rev. 01 — 29 July 2009
32 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
[3]
Total harmonic distortion is measured at the bandwidth of 22 Hz to 20 kHz, AES brick wall. The maximum limit is guaranteed but may
not be 100 % tested.
[4]
Vripple = Vripple(max) = 2 V (p-p); Rs = 0 Ω.
[5]
B = 22 Hz to 20 kHz, AES brick wall, Rs = 0 Ω.
[6]
B = 22 Hz to 20 kHz, AES brick wall, independent of Rs.
[7]
Vi = Vi(max) = 0.5 V RMS.
14. Application information
14.1 Output power estimation (Stereo mode)
The output power, just before clipping, can be estimated using Equation 5:
2
RL
f osc
 × 1 – t
  ----------------------------------------------------× ---------- × V P 
w
(
min
)
  R L + 2 × ( R DSon + R s ) 

2 
P o = ---------------------------------------------------------------------------------------------------------------------------------------- [ W ]
2 × RL
(5)
Where,
•
•
•
•
•
•
VP = supply voltage (V)
RL = load impedance (Ω)
RDSon = drain-source on-state resistance (Ω)
Rs = series resistance of the output inductor (Ω)
tw(min) = minimum pulse width(s) depending on output current (s)
fosc = oscillator frequency in Hz (typically 320 kHz)
The output power at 10 % THD can be estimated by: P o ( 2 ) = 1.25 × P o ( 1 ) where
Po(1) = 0.5 % and Po(2) = 10 %.
Figure 26 and Figure 27 show the estimated output power at THD = 0.5 % and
THD = 10 % as a function of supply voltage for different load impedances in stereo mode.
TDF8599B_1
Product data sheet
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Rev. 01 — 29 July 2009
33 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
Po
(W)
001aak225
70
001aak226
80
Po
(W)
60
50
60
(1)
40
(2)
(1)
40
(2)
30
20
20
10
0
0
8
12
16
20
24
8
12
VP (V)
16
20
24
VP (V)
THD = 0.5 %.
THD = 10 %.
RDSon = 0.19 Ω (at Tj = 100 °C), Rs = 0.05 Ω,
tw(min) = 190 ns and IO(ocp) = 8 A (minimum).
RDSon = 0.19 Ω (at Tj = 100 °C), Rs = 0.05 Ω,
tw(min) = 190 ns and IO(ocp) = 8 A (minimum).
(1) RL = 2 Ω.
(1) RL = 2 Ω.
(2) RL = 4 Ω.
(2) RL = 4 Ω.
Fig 26. Po as a function of VP in stereo mode with
THD = 0.5 %
Fig 27. Po as a function of VP in stereo mode with
THD = 10 %
TDF8599B_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 29 July 2009
34 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
14.2 Output power estimation (Parallel mode)
Figure 28 and Figure 29 show the estimated output power at THD = 0.5 % and
THD = 10 % as a function of the supply voltage for different load impedances in parallel
mode.
001aak227
150
001aak228
180
Po
(W)
150
Po
(W)
120
120
90
(1)
(1)
90
60
(2)
(3)
(3)
30
(2)
60
30
0
0
8
12
16
20
24
8
12
VP (V)
16
20
24
VP (V)
THD = 0.5 %.
THD = 10 %.
RDSon = 0.1 Ω (at Tj = 100 °C), Rs = 0.025 Ω,
tw(min) = 190 ns and IO(ocp) = 16 A (minimum).
RDSon = 0.1 Ω (at Tj = 100 °C), Rs = 0.025 Ω,
tw(min) = 190 ns and IO(ocp) = 16 A (minimum).
(1) RL = 1 Ω.
(1) RL = 1 Ω.
(2) RL = 2 Ω.
(2) RL = 2 Ω.
(3) RL = 4 Ω.
(3) RL = 4 Ω.
Fig 28. Po as a function of VP in parallel mode with
THD = 0.5 %
Fig 29. Po as a function of VP parallel mode with
THD = 10 %
14.3 Output current limiting
The peak output current is internally limited to 8 A maximum. During normal operation, the
output current should not exceed this threshold level otherwise the output signal will be
distorted. The peak output current can be estimated using Equation 6:
VP
I o ≤ ------------------------------------------------------ ≤ 8 [ A ]
R L + 2 × ( R DSon + R s )
•
•
•
•
•
(6)
Io = output current (A)
VP = supply voltage (V)
RL = load impedance (Ω)
RDSon = on-resistance of power switch (Ω)
Rs = series resistance of output inductor (Ω)
Example: A 2 Ω speaker can be used with a supply voltage of 19 V before current limiting
is triggered.
Current limiting (clipping) avoids audio holes but can cause distortion similar to voltage
clipping. In Parallel mode, the output current is internally limited above 16 A.
TDF8599B_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 29 July 2009
35 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
14.4 Speaker configuration and impedance
A flat-frequency response (due to a 2nd order Butterworth filter) is obtained by changing
the low-pass filter components (LLC, CLC) based on the speaker configuration and
impedance. Table 22 shows the required values.
Table 22.
Filter component values
Load impedance (Ω)
LLC (µH)
CLC (µF)
1
2.5
4.4
2
5
2.2
4
10
1
Remark: When using a 1 Ω load impedance in Parallel mode, the outputs are shorted
after the low-pass filter switches two 2 Ω filters in parallel.
14.5 Heat sink requirements
In most applications, it is necessary to connect an external heat sink to the TDF8599B.
Thermal foldback activates at Tj = 140 °C. The expression below shows the relationship
between the maximum power dissipation before activation of thermal foldback and the
total thermal resistance from junction to ambient:
T j ( max ) – T amb
R th ( j-a ) = ------------------------------------ [ K ⁄ W ]
P max
(7)
Pmax is determined by the efficiency (η) of the TDF8599B. The efficiency measured as a
function of output power is given in Figure 43. The power dissipation can be derived as a
function of output power (see Figure 42).
Example 1:
•
•
•
•
•
•
VP = 14.4 V
Po = 2 × 25 W into 4 Ω (THD = 10 % continuous)
Tj(max) = 140 °C
Tamb = 25 °C
Pmax = 5.8 W (from Figure 42)
The required Rth(j-a) = 115 °C / 5.8 W = 19 K/W
The total thermal resistance Rth(j-a) consists of: Rth(j-c) + Rth(c-h) + Rth(h-a)
Where:
• Thermal resistance from junction to case (Rth(j-c)) = 1 K/W
• Thermal resistance from case to heat sink (Rth(c-h)) = 0.5 K/W to 1 K/W (depending on
mounting)
• Thermal resistance from heat sink to ambient (Rth(h-a)) would then be
19 − (1 + 1) = 17 K/W.
If an audio signal has a crest factor of 10 (the ratio between peak power and average
power = 10 dB) then Tj will be much lower.
TDF8599B_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 29 July 2009
36 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
Example 2:
•
•
•
•
•
•
VP = 14.4 V
Po = 2 × (25 W / 10) = 2 × 2.5 W into 4 Ω (audio with crest factor of 10)
Tamb = 25 °C
Pmax = 2.5 W
Rth(j-a) = 19 K/W
Tj(max) = 25 °C + (2.5 W × 19 K/W) = 72 °C
14.6 Curves measured in reference design
001aak229
102
THD + N
(%)
THD + N
(%)
10
10
1
1
10−1
(3)
10−1
(2)
10−2
(3)
(2)
(1)
10−3
10−1
001aak231
102
10−2
1
102
10
10−3
10−1
(1)
1
Po (W)
(1) VP = 14.4 V, RL = 2 Ω at 6 kHz.
(1) VP = 14.4 V, RL = 4 Ω at 6 kHz.
(2) VP = 14.4 V; RL = 2 Ω at 1 kHz.
(2) VP = 14.4 V; RL = 4 Ω at 1 kHz.
(3) VP = 14.4 V; RL = 2 Ω at 100 Hz.
(3) VP = 14.4 V; RL = 4 Ω at 100 Hz.
Fig 30. THD + N as a function of output power with a
2 Ω load; VP = 14.4 V
Fig 31. THD + N as a function of output power with a
4 Ω load; VP = 14.4 V
TDF8599B_1
Product data sheet
102
10
Po (W)
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 29 July 2009
37 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
001aak232
102
001aak233
102
THD + N
(%)
THD + N
(%)
10
10
1
1
(3)
10−1
(3)
10−1
(2)
(2)
10−2
10−2
(1)
10−3
10−1
1
10
102
103
(1)
10−3
10−1
1
Po (W)
(1) VP = 24 V, RL = 2 Ω at 6 kHz.
(1) VP = 24 V, RL = 4 Ω at 6 kHz.
(2) VP = 24 V; RL = 2 Ω at 1 kHz.
(2) VP = 24 V; RL = 4 Ω at 1 kHz.
(3) VP = 24 V; RL = 2 Ω at 100 Hz.
(3) VP = 24 V; RL = 4 Ω at 100 Hz.
Fig 32. THD + N as a function of output power with a
2 Ω load; VP = 24 V
001aak238
1
102
10
Po (W)
Fig 33. THD + N as a function of output power with a
4 Ω load; VP = 24 V
001aak239
1
THD + N
(%)
THD + N
(%)
10−1
10−1
(1)
10−2
10−2
(1)
(2)
(2)
10−3
10
102
103
104
105
10−3
10
102
103
f (Hz)
105
f (Hz)
(1) VP = 14.4 V; RL = 2 Ω at 1 W.
(1) VP = 14.4 V; RL = 4 Ω at 1 W.
(2) VP = 14.4 V; RL = 2 Ω at 10 W.
(2) VP = 14.4 V; RL = 4 Ω at 10 W.
Fig 34. THD + N as a function of frequency with a 2 Ω
load, BD modulation; VP = 14.4 V
Fig 35. THD + N as a function of frequency with a 4 Ω
load, BD modulation; VP = 14.4 V
TDF8599B_1
Product data sheet
104
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Rev. 01 — 29 July 2009
38 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
001aak241
1
001aak240
30
G
(dB)
THD + N
(%)
28
10−1
26
24
10−2
(1)
(2)
22
10−3
10
102
103
104
105
20
10
102
103
104
f (Hz)
105
f (Hz)
(1) VP = 24 V; RL = 2 Ω at 1 W.
(2) VP = 24 V; RL = 2 Ω at 10 W.
Fig 36. THD + N as a function of frequency with a 2 Ω
load, BD modulation; VP = 24 V
001aak243
120
Fig 37. Gain as a function of frequency
001aak242
80
(1)
(1)
Po
(W)
Po
(W)
(2)
(2)
60
(3)
(3)
80
40
40
20
0
0
10
14
18
22
26
10
14
VP (V)
22
26
VP (V)
f = 1 kHz; RL = 2 Ω.
f = 1 kHz; RL = 4 Ω.
(1) THD = 10 %.
(1) THD = 10 %.
(2) THD = 3 %.
(2) THD = 3 %.
(3) THD = 1 %.
(3) THD = 1 %.
Fig 38. Output power as a function of supply voltage
with a 2 Ω load
Fig 39. Output power as a function of supply voltage
with a 4 Ω load
TDF8599B_1
Product data sheet
18
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 29 July 2009
39 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
001aak244
−60
001aak245
−50
αcs
(dB)
αcs
(dB)
−60
−70
−70
−80
−80
−90
−90
−100
10
102
103
104
105
−100
10
102
103
104
f (Hz)
105
f (Hz)
VP = 14.4 V; RL = 4 Ω at 1 W.
VP = 14.4 V; RL = 4 Ω at 10 W.
Fig 40. Channel separation as a function of frequency
with 1 W output power, BD modulation
001aak246
25
Fig 41. Channel separation as a function of frequency
with 10 W output power, BD modulation
001aak247
100
η
(%)
PD
(W)
(1)
20
(1)
(2)
80
15
60
10
40
(2)
5
20
0
0
0
20
40
60
0
Po (W)
40
60
Po (W)
VP = 14.4 V.
VP = 24 V.
(1) RL = 2 Ω.
(1) RL = 4 Ω.
(2) RL = 4 Ω.
(2) RL = 2 Ω.
Fig 42. Power dissipation as a function of total output
power with both channels driven; VP = 14.4 V
Fig 43. Efficiency as a function of total output power
with both channels driven; VP = 24 V
TDF8599B_1
Product data sheet
20
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 29 July 2009
40 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
001aak248
60
001aak249
100
η
(%)
(1)
PD
(W)
(1)
(2)
80
40
60
40
20
(2)
20
0
0
0
40
80
120
0
40
Po (W)
80
120
Po (W)
VP = 24 V.
VP = 24 V.
(1) RL = 2 Ω.
(1) RL = 4 Ω.
(2) RL = 4 Ω.
(2) RL = 2 Ω.
Fig 44. Power dissipation as a function of total output
power with both channels driven; VP = 24 V
Fig 45. Efficiency as a function of total output power
with both channels driven; VP = 24 V
001aak250
−70
CMRR
(dB)
−74
−78
−82
−86
−90
10
102
103
104
105
f (Hz)
VP = 14.4 V; Vi = 1 V RMS.
Fig 46. CMRR as a function of frequency
TDF8599B_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 29 July 2009
41 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
14.7 Typical application schematics
bead
100 µF
35 V
bead
bead
VP
100 µF
35 V
VP1
VP2
VPA
PGND1
1000 µF
35 V
GND
PGND2
GNDD/HW
100 nF
VDDD
220 nF
LLC
OUT1N
OUT1N
100 nF
CLC
15 nF
10 Ω
22 Ω
470 pF
CLC
100 nF
470 pF
10 Ω
OUT1P
LLC
OUT2P
OUT2P
100 nF
CLC
15 nF
10 Ω
22 Ω
470 pF
470 pF
VP2
22 Ω
CLC
100 nF
OUT2N
470 pF
BOOT2P
PGND2 PGND2
VP2
VP2
BOOT2N
10 Ω
15 nF
LLC
33
2
3
4
32
5
31
6
IN1P CIN1P
470 nF
IN1N CIN1N
470 nF
CIN2P
470 nF
IN2N CIN2N
470 nF
IN2P
ACGND
EN
28
7
IN1P
IN1N
IN2P
IN2N
CACGND
100 nF
enable(1)
8
9
TDF8599B
27
10
26
11
25
12
24
13
SEL_MUTE
220 nF
OUT2N
VSTAB2
DCP
(3)
OSCIO
23
14
22
15
21
16
20
17
19
18
mute/on(1)
470 nF
SVRR
47 µF
AGND
VDDA
2.2 µF
bead
VPA
non-I2C-bus
mode
ADS
MOD
4.7 kΩ
CLIP
10 kΩ
DIAG
10 kΩ
100 nF
PGND2
470 pF
34
PGND1
30
PGND1
BOOT1P
29
15 nF
LLC
OUT1P
VP1
35
1
100 nF
PGND1
470 pF
BOOT1N
VP1
470 pF
VP1
22 Ω
VSTAB1
36
BD modulation
setting
VPull-up
VPull-up
SDA
SCL
SSM
OSCSET
1 µF(2)
100 nF
39 kΩ
MASTER
MODE
001aak220
Dual BTL mode (stereo) in non-I2C-bus mode with DC offset protection disabled; Spread spectrum
mode enabled BD modulation.
(1) See Figure 3 on page 6 for a diagram of the connection for pins EN and SEL_MUTE.
(2) See Section 8.3.2 on page 8 for detailed information.
(3) See Section 8.5.5 on page 16 for detailed information on DC offset protection.
Fig 47. Example application diagram for dual BTL in non-I2C-bus mode
TDF8599B_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 29 July 2009
42 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
bead
100 µF
35 V
bead
bead
VP
100 µF
35 V
VP1
VP2
VPA
PGND1
1000 µF
35 V
GND
PGND2
GNDD/HW
100 nF
VDDD
220 nF
LLC
OUT1N
OUT1N
100 nF
CLC
15 nF
10 Ω
22 Ω
470 pF
CLC
100 nF
470 pF
10 Ω
OUT1P
LLC
OUT2P
OUT2P
100 nF
CLC
15 nF
10 Ω
22 Ω
470 pF
470 pF
VP2
22 Ω
CLC
100 nF
OUT2N
470 pF
BOOT2P
PGND2 PGND2
VP2
VP2
BOOT2N
10 Ω
15 nF
LLC
220 nF
OUT2N
VSTAB2
DCP
(3)
2
34
3
33
4
32
5
31
6
7
8
28
9
TDF8599B
27
10
26
11
25
12
24
13
IN1P CIN1P
470 nF
IN1N CIN1N
470 nF
IN2P CIN2P
470 nF
IN2N CIN2N
470 nF
ACGND
EN
4.7 µF
OSCIO
23
14
22
15
21
16
20
17
19
18
IN1P
IN1N
IN2P
IN2N
CACGND
100 nF
enable(1)
SEL_MUTE(1)
470 nF
SVRR
47 µF
AGND
VDDA
2.2 µF
bead
ADS
RADS
MOD
≤ 13 kΩ
100 nF
PGND2
470 pF
35
PGND1
30
PGND1
BOOT1P
29
15 nF
LLC
OUT1P
VP1
1
100 nF
PGND1
470 pF
BOOT1N
VP1
470 pF
VP1
22 Ω
VSTAB1
36
CLIP
10 kΩ
DIAG
10 kΩ
VPA
I2C-bus
address select
stereo mode
setting
VPull-up
VPull-up
SDA
connect
to µP
SCL
SSM
OSCSET
(2)
100 nF
39 kΩ
MASTER
MODE
001aak221
Dual BTL mode (stereo) in I2C-bus mode with DC offset protection enabled; Spread spectrum
mode disabled.
(1) See Figure 3 on page 6 for a diagram of the connection for pins EN and SEL_MUTE.
(2) See Section 8.3.2 on page 8 for detailed information.
(3) See Section 8.5.5 on page 16 for detailed information on DC offset protection.
Fig 48. Example application diagram for dual BTL in I2C-bus mode
TDF8599B_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 29 July 2009
43 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
bead
100 µF
35 V
bead
bead
VP
100 µF
35 V
VP1
VP2
VPA
PGND1
1000 µF
35 V
GND
PGND2
GNDD/HW
100 nF
VDDD
220 nF
LLC
OUT1N
15 nF
10 Ω
470 pF
470 pF
CLC
10 Ω
22 Ω
VP1
OUT1P
LLC
22 Ω
100 nF
OUT2P
BOOT2P
CLC
470 pF
OUTP
15 nF
10 Ω
470 pF
VP2
PGND2 PGND2
100 nF
PGND2
470 pF
470 pF
VP2
VP2
BOOT2N
10 Ω
15 nF
LLC
220 nF
OUT2N
VSTAB2
DCP
(3)
35
2
34
3
33
4
32
5
31
6
PGND1
30
PGND1
BOOT1P
29
15 nF
LLC
1
100 nF
PGND1
470 pF
100 nF
BOOT1N
VP1
470 pF
VP1
OUTN
VSTAB1
36
4.7 µF
OSCIO
7
8
28
9
TDF8599B
27
10
26
11
25
12
24
13
23
14
22
15
21
16
20
17
19
18
IN1P
IN1N
CINP
CINN
470 nF
INP
470 nF
INN
IN2P
IN2N
ACGND
EN
CACGND
100 nF
enable(1)
SEL_MUTE(1)
470 nF
SVRR
47 µF
AGND
VDDA
2.2 µF
bead
ADS
RADS
MOD
≥ 33 kΩ
CLIP
10 kΩ
DIAG
10 kΩ
VPA
I2C-bus
address select
parallel mode
setting
VPull-up
VPull-up
SDA
connect
to µP
SCL
SSM
OSCSET
100 nF
39 kΩ
fixed
frequency(2)
MASTER
MODE
001aak222
Single BTL mode (parallel) in I2C-bus mode with DC offset protection enabled; Spread spectrum
mode disabled.
(1) See Figure 3 on page 6 for a diagram of the connection for pins EN and SEL_MUTE.
(2) See Section 8.3.2 on page 8 for detailed information.
(3) See Section 8.5.5 on page 16 for detailed information on DC offset protection.
Fig 49. Example application diagram for a single BTL in I2C-bus mode
TDF8599B_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 29 July 2009
44 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
bead
100 µF
35 V
bead
100 µF
35 V
bead
VP
GND
VP1
VP2
GNDD/HW
VPA
PGND1
1000 µF
35 V
100 nF
PGND2
VDDD
220 nF
LLC
OUT1N
OUT1N
100 nF
CLC
15 nF
10 Ω
22 Ω
470 pF
CLC
100 nF
470 pF
10 Ω
PGND1
PGND1
BOOT1P
15 nF
LLC
OUT1P
VP1
OUT1P
LLC
OUT2P
OUT2P
100 nF
CLC
15 nF
10 Ω
22 Ω
470 pF
470 pF
VP2
CLC
100 nF
470 pF
100 nF
VP2
VP2
BOOT2N
10 Ω
15 nF
LLC
OUT2N
BOOT2P
PGND2 PGND2
PGND2
470 pF
22 Ω
OUT2N
220 nF
VSTAB2
DCP
DC offset
protection enabled
1
35
2
34
3
33
4
32
5
31
6
30
7
29
8
100 nF
PGND1
470 pF
BOOT1N
VP1
470 pF
VP1
22 Ω
VSTAB1
36
4.7 µF
OSCIO
(3)
28
9
TDF8599B
27 MASTER 10
26
11
25
12
24
13
23
14
22
15
21
16
20
17
19
18
IN1P CIN1P
470 nF
IN1N CIN1N
470 nF
IN2P CIN2P
470 nF
IN2N CIN2N
470 nF
GNDD/HW
VDDD
220 nF
LLC
470 pF
15 nF
470 pF
470 pF
10 Ω
22 Ω
VP1
OUT1P
LLC
22 Ω
OUT2P
15 nF
10 Ω
BOOT2P
CLC
470 pF
470 pF
VP2
PGND2 PGND2
100 nF
PGND2
470 pF
470 pF
VP2
VP2
BOOT2N
10 Ω
15 nF
LLC
220 nF
OUT2N
VSTAB2
DCP
DC offset
protection enabled
(3)
1
35
2
34
3
33
4
32
5
31
6
PGND1
30
PGND1
BOOT1P
29
15 nF
LLC
36
100 nF
PGND1
CLC
BOOT1N
VP1
470 pF
VP1
OUT3N
VSTAB1
OUT1N
10 Ω
OUT3P
IN2P
IN2N
100 nF
EN(1)
enable
SEL_MUTE(1)
470 nF
SVRR
47 µF
AGND
2.2 µF
VDDA
VPA
bead
ADS
RADS
MOD
≤ 13 kΩ
CLIP
10 kΩ
DIAG
10 kΩ
I2C-bus
address select
stereo mode
setting
VPull-up
VPull-up
SDA
SCL
1 µF
SSM
OSCSET
spread
spectrum
mode(2)
100 nF
MASTER
MODE
39 kΩ
100 nF
100 nF
IN1N
CACGND
ACGND
20 kΩ
100 nF
IN1P
4.7 µF
OSCIO
7
8
9
28
TDF8599B
27 SLAVE 10
26
11
25
12
24
13
23
14
22
15
21
16
20
17
19
18
IN1P
CINP
470 nF
IN1N
CINN
470 nF
IN3P
IN3N
IN2P
IN2N
CACGND
ACGND
100 nF
EN(1)
SEL_MUTE(1)
470 nF
SVRR
47 µF
AGND
2.2 µF
VDDA
VPA
bead
ADS
RADS
MOD
≥ 33 kΩ
CLIP
10 kΩ
DIAG
10 kΩ
I2C-bus
address select
parallel mode
setting
VPull-up
VPull-up
SDA
connect
to µP
SCL
5.1 kΩ
SSM
OSCSET
270 nF
phase lock
operation
10 nF
(4)
SLAVE MODE
001aak223
I2C-bus mode: Dual BTL Master mode, one BTL in Slave mode; DC offset protection enabled.
(1) See Figure 3 on page 6 for a diagram of the connection for pins EN and SEL_MUTE.
(2) See Section 8.3.2 on page 8 for detailed information.
(3) See Section 8.5.5 on page 16 for detailed information on DC offset protection.
(4) See Section 8.3.4 on page 10 for detailed information on PLL operation.
Fig 50. Master-slave example application diagram; two BTL masters and one BTL slave
in I2C-bus mode
TDF8599B_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 29 July 2009
45 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
15. Package outline
HSOP36: plastic, heatsink small outline package; 36 leads; low stand-off height
SOT851-2
D
E
A
x
c
y
X
E2
v
HE
M
A
D1
D2
1
18
pin 1 index
Q
A
A2
E1
(A 3)
A4
θ
Lp
detail X
36
19
z
w
bp
e
M
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT max. A2
mm
3.5
A3
A4(1)
+0.08
3.5
0.35
−0.04
3.2
D1
D2
E (2)
E1
E2
e
HE
Lp
Q
0.38 0.32 16.0 13.0
0.25 0.23 15.8 12.6
1.1
0.9
11.1
10.9
6.2
5.8
2.9
2.5
0.65
14.5
13.9
1.1
0.8
1.7
1.5
bp
c
D (2)
v
w
x
y
0.25 0.12 0.03 0.07
Z
θ
2.55
2.20
8°
0°
Notes
1. Limits per individual lead.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-05-04
SOT851-2
Fig 51. Package outline SOT851-2 (HSOP36)
TDF8599B_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 29 July 2009
46 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
16. Handling information
In accordance with SNW-FQ-611-D. The number of the quality specification can be found
in the Quality Reference Handbook. The handbook can be ordered using the code
9398 510 63011.
17. Soldering of SMD packages
This text provides a very brief insight into a complex technology. A more in-depth account
of soldering ICs can be found in Application Note AN10365 “Surface mount reflow
soldering description”.
17.1 Introduction to soldering
Soldering is one of the most common methods through which packages are attached to
Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both
the mechanical and the electrical connection. There is no single soldering method that is
ideal for all IC packages. Wave soldering is often preferred when through-hole and
Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not
suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high
densities that come with increased miniaturization.
17.2 Wave and reflow soldering
Wave soldering is a joining technology in which the joints are made by solder coming from
a standing wave of liquid solder. The wave soldering process is suitable for the following:
• Through-hole components
• Leaded or leadless SMDs, which are glued to the surface of the printed circuit board
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless
packages which have solder lands underneath the body, cannot be wave soldered. Also,
leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,
due to an increased probability of bridging.
The reflow soldering process involves applying solder paste to a board, followed by
component placement and exposure to a temperature profile. Leaded packages,
packages with solder balls, and leadless packages are all reflow solderable.
Key characteristics in both wave and reflow soldering are:
•
•
•
•
•
•
Board specifications, including the board finish, solder masks and vias
Package footprints, including solder thieves and orientation
The moisture sensitivity level of the packages
Package placement
Inspection and repair
Lead-free soldering versus SnPb soldering
17.3 Wave soldering
Key characteristics in wave soldering are:
TDF8599B_1
Product data sheet
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Rev. 01 — 29 July 2009
47 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
• Process issues, such as application of adhesive and flux, clinching of leads, board
transport, the solder wave parameters, and the time during which components are
exposed to the wave
• Solder bath specifications, including temperature and impurities
17.4 Reflow soldering
Key characteristics in reflow soldering are:
• Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to
higher minimum peak temperatures (see Figure 52) than a SnPb process, thus
reducing the process window
• Solder paste printing issues including smearing, release, and adjusting the process
window for a mix of large and small components on one board
• Reflow temperature profile; this profile includes preheat, reflow (in which the board is
heated to the peak temperature) and cooling down. It is imperative that the peak
temperature is high enough for the solder to make reliable solder joints (a solder paste
characteristic). In addition, the peak temperature must be low enough that the
packages and/or boards are not damaged. The peak temperature of the package
depends on package thickness and volume and is classified in accordance with
Table 23 and 24
Table 23.
SnPb eutectic process (from J-STD-020C)
Package thickness (mm)
Package reflow temperature (°C)
Volume (mm3)
< 350
≥ 350
< 2.5
235
220
≥ 2.5
220
220
Table 24.
Lead-free process (from J-STD-020C)
Package thickness (mm)
Package reflow temperature (°C)
Volume (mm3)
< 350
350 to 2000
> 2000
< 1.6
260
260
260
1.6 to 2.5
260
250
245
> 2.5
250
245
245
Moisture sensitivity precautions, as indicated on the packing, must be respected at all
times.
Studies have shown that small packages reach higher temperatures during reflow
soldering, see Figure 52.
TDF8599B_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 29 July 2009
48 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
maximum peak temperature
= MSL limit, damage level
temperature
minimum peak temperature
= minimum soldering temperature
peak
temperature
time
001aac844
MSL: Moisture Sensitivity Level
Fig 52. Temperature profiles for large and small components
For further information on temperature profiles, refer to Application Note AN10365
“Surface mount reflow soldering description”.
18. Abbreviations
Table 25.
Abbreviations
Abbreviation
Description
BCDMOS
Bipolar Complementary and double Diffused Metal-Oxide Semiconductor
BTL
Bridge-Tied Load
DCP
DC offset Protection
DMOST
double Diffused Metal-Oxide Semiconductor Transistor
EMI
ElectroMagnetic Interference
I2C
Inter-Integrated Circuit
LSB
Least Significant Bit
Mµp
Master microprocessor
MSB
Most Significant Bit
NDMOST
N-type double Diffused Metal-Oxide Semiconductor Transistor
OCP
OverCurrent Protection
OTP
OverTemperature Protection
OVP
OverVoltage Protection
POR
Power-On Reset
PWM
Pulse-Width Modulation
SOI
Silicon On Insulator
TFP
Thermal Foldback Protection
UVP
UnderVoltage Protection
WP
Window Protection
TDF8599B_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 29 July 2009
49 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
19. Revision history
Table 26.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
TDF8599B_1
20090729
Product data sheet
-
-
TDF8599B_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 29 July 2009
50 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
20. Legal information
20.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
20.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
20.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
20.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
I2C-bus — logo is a trademark of NXP B.V.
21. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
TDF8599B_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 29 July 2009
51 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
22. Tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Quick reference data . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . .2
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . .4
I2C-bus mode operation . . . . . . . . . . . . . . . . . . .7
Non-I2C-bus mode operation . . . . . . . . . . . . . . .7
Mode setting pin OSCIO . . . . . . . . . . . . . . . . . .7
Oscillator modes . . . . . . . . . . . . . . . . . . . . . . .10
Operation mode selection with the MOD pin . .11
Overview of protection types . . . . . . . . . . . . . .15
Overview of TDF8599B protection
circuits and amplifier states . . . . . . . . . . . . . . .17
Table 11. Available data on pins DIAG and CLIP . . . . . .18
Table 12. Interpretation of DC load detection bits . . . . . .20
Table 13. I2C-bus write address selection using
Table 14.
Table 15.
Table 16.
Table 17.
Table 18.
Table 19.
Table 20.
Table 21.
Table 22.
Table 23.
Table 24.
Table 25.
Table 26.
pins MOD and ADS . . . . . . . . . . . . . . . . . . . . . 23
Instruction byte descriptions . . . . . . . . . . . . . . 25
Phase shift bit settings . . . . . . . . . . . . . . . . . . 25
Description of data bytes . . . . . . . . . . . . . . . . . 26
Limiting values . . . . . . . . . . . . . . . . . . . . . . . . . 27
Thermal characteristics . . . . . . . . . . . . . . . . . . 28
Static characteristics . . . . . . . . . . . . . . . . . . . . 28
Switching characteristics . . . . . . . . . . . . . . . . . 31
Dynamic characteristics . . . . . . . . . . . . . . . . . 32
Filter component values . . . . . . . . . . . . . . . . . 36
SnPb eutectic process (from J-STD-020C) . . . 48
Lead-free process (from J-STD-020C) . . . . . . 48
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 50
23. Figures
Fig 1.
Fig 2.
Fig 3.
Fig 4.
Fig 5.
Fig 6.
Fig 7.
Fig 8.
Fig 9.
Fig 10.
Fig 11.
Fig 12.
Fig 13.
Fig 14.
Fig 15.
Fig 16.
Fig 17.
Fig 18.
Fig 19.
Fig 20.
Fig 21.
Fig 22.
Fig 23.
Fig 24.
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
Heatsink up (top view) pin configuration
TDF8599BTH. . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
Mode selection. . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Clock frequency as a function of Rosc . . . . . . . . . .8
Master and slave configuration . . . . . . . . . . . . . . .8
Spread spectrum mode . . . . . . . . . . . . . . . . . . . . .9
Spread spectrum operation in Master mode . . . . .9
Phase lock operation . . . . . . . . . . . . . . . . . . . . . .10
AD/BD modulation switching circuit . . . . . . . . . . .12
AD modulation . . . . . . . . . . . . . . . . . . . . . . . . . . .12
BD modulation . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Master and slave operation with 1⁄2 p phase
shift . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Parallel mode . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
DC offset protection and diagnostic output . . . . .16
Diagnostic output for short circuit conditions . . . .18
DC load detection circuit . . . . . . . . . . . . . . . . . . .19
DC load detection procedure . . . . . . . . . . . . . . . .19
DC load detection limits . . . . . . . . . . . . . . . . . . . .19
Recommended start-up sequence with DC load
detection enabled. . . . . . . . . . . . . . . . . . . . . . . . .21
Start-up and shutdown timing in I2C-bus
mode with DC load detection . . . . . . . . . . . . . . . .22
Start-up and shutdown timing in non-I2C-bus
mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
I2C-bus start and stop conditions. . . . . . . . . . . . .24
Data bits sent from Master microprocessor
(Mmp). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
I2C-bus write . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
Fig 25. I2C-bus read . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Fig 26. Po as a function of VP in stereo mode with
THD = 0.5 % . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Fig 27. Po as a function of VP in stereo mode with
THD = 10 %. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Fig 28. Po as a function of VP in parallel mode with
THD = 0.5 % . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Fig 29. Po as a function of VP parallel mode with
THD = 10 %. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Fig 30. THD + N as a function of output power with
a 2 W load; VP = 14.4 V. . . . . . . . . . . . . . . . . . . . 37
Fig 31. THD + N as a function of output power with
a 4 W load; VP = 14.4 V. . . . . . . . . . . . . . . . . . . . 37
Fig 32. THD + N as a function of output power with
a 2 W load; VP = 24 V . . . . . . . . . . . . . . . . . . . . . 38
Fig 33. THD + N as a function of output power with
a 4 W load; VP = 24 V . . . . . . . . . . . . . . . . . . . . . 38
Fig 34. THD + N as a function of frequency with a
2 W load, BD modulation; VP = 14.4 V . . . . . . . . 38
Fig 35. THD + N as a function of frequency with a
4 W load, BD modulation; VP = 14.4 V . . . . . . . . 38
Fig 36. THD + N as a function of frequency with a
2 W load, BD modulation; VP = 24 V . . . . . . . . . . 39
Fig 37. Gain as a function of frequency. . . . . . . . . . . . . . 39
Fig 38. Output power as a function of supply voltage
with a 2 W load . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Fig 39. Output power as a function of supply voltage
with a 4 W load . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Fig 40. Channel separation as a function of frequency
with 1 W output power, BD modulation . . . . . . . . 40
continued >>
TDF8599B_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 29 July 2009
52 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
Fig 41. Channel separation as a function of frequency
with 10 W output power, BD modulation . . . . . . .40
Fig 42. Power dissipation as a function of total output
power with both channels driven; VP = 14.4 V . . .40
Fig 43. Efficiency as a function of total output power
with both channels driven; VP = 24 V. . . . . . . . . .40
Fig 44. Power dissipation as a function of total output
power with both channels driven; VP = 24 V . . . .41
Fig 45. Efficiency as a function of total output power
with both channels driven; VP = 24 V. . . . . . . . . .41
Fig 46. CMRR as a function of frequency . . . . . . . . . . . .41
Fig 47. Example application diagram for dual BTL in
non-I2C-bus mode . . . . . . . . . . . . . . . . . . . . . . . .42
Fig 48. Example application diagram for dual BTL in
I2C-bus mode . . . . . . . . . . . . . . . . . . . . . . . . . . . .43
Fig 49. Example application diagram for a single BTL
in I2C-bus mode . . . . . . . . . . . . . . . . . . . . . . . . . .44
Fig 50. Master-slave example application diagram;
two BTL masters and one BTL slave in I2C-bus
mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .45
Fig 51. Package outline SOT851-2 (HSOP36). . . . . . . . .46
Fig 52. Temperature profiles for large and small
components . . . . . . . . . . . . . . . . . . . . . . . . . . . . .49
TDF8599B_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 29 July 2009
53 of 54
TDF8599B
NXP Semiconductors
I2C-bus controlled dual channel class-D power amplifier
24. Contents
1
2
3
4
5
6
7
7.1
7.2
8
8.1
8.2
8.3
8.3.1
8.3.2
8.3.3
8.3.4
8.4
8.4.1
8.4.2
8.4.3
8.5
8.5.1
8.5.2
8.5.3
8.5.4
8.5.5
8.5.6
8.5.7
8.6
8.6.1
8.6.2
8.6.2.1
8.6.2.2
8.6.2.3
8.6.2.4
8.6.3
9
9.1
9.2
10
11
12
12.1
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pinning information . . . . . . . . . . . . . . . . . . . . . . 4
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
Functional description . . . . . . . . . . . . . . . . . . . 5
General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Mode selection . . . . . . . . . . . . . . . . . . . . . . . . . 6
Pulse-width modulation frequency . . . . . . . . . . 7
Master and slave mode selection . . . . . . . . . . . 7
Spread spectrum mode (Master mode) . . . . . . 8
Frequency hopping (Master mode). . . . . . . . . . 9
Phase lock operation (Slave mode) . . . . . . . . 10
Operation mode selection. . . . . . . . . . . . . . . . 11
Modulation mode . . . . . . . . . . . . . . . . . . . . . . 11
Phase staggering (Slave mode) . . . . . . . . . . . 13
Parallel mode . . . . . . . . . . . . . . . . . . . . . . . . . 14
Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Thermal foldback . . . . . . . . . . . . . . . . . . . . . . 15
Overtemperature protection . . . . . . . . . . . . . . 15
Overcurrent protection . . . . . . . . . . . . . . . . . . 15
Window protection . . . . . . . . . . . . . . . . . . . . . 15
DC offset protection . . . . . . . . . . . . . . . . . . . . 16
Supply voltages . . . . . . . . . . . . . . . . . . . . . . . 17
Overview of protection circuits and amplifier
states . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Diagnostic output . . . . . . . . . . . . . . . . . . . . . . 17
Diagnostic table . . . . . . . . . . . . . . . . . . . . . . . 17
Load identification (I2C-bus mode only) . . . . . 18
DC load detection . . . . . . . . . . . . . . . . . . . . . . 18
Recommended start-up sequence with DC load
detection enabled . . . . . . . . . . . . . . . . . . . . . . 20
AC load detection . . . . . . . . . . . . . . . . . . . . . . 21
CLIP detection . . . . . . . . . . . . . . . . . . . . . . . . 21
Start-up and shutdown sequence. . . . . . . . . . 22
I2C-bus specification . . . . . . . . . . . . . . . . . . . . 23
Instruction bytes . . . . . . . . . . . . . . . . . . . . . . . 25
Data bytes. . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 27
Thermal characteristics. . . . . . . . . . . . . . . . . . 28
Static characteristics. . . . . . . . . . . . . . . . . . . . 28
Switching characteristics . . . . . . . . . . . . . . . . 31
13
14
14.1
14.2
14.3
14.4
14.5
14.6
14.7
15
16
17
17.1
17.2
17.3
17.4
18
19
20
20.1
20.2
20.3
20.4
21
22
23
24
Dynamic characteristics . . . . . . . . . . . . . . . . .
Application information . . . . . . . . . . . . . . . . .
Output power estimation (Stereo mode) . . . .
Output power estimation (Parallel mode) . . . .
Output current limiting . . . . . . . . . . . . . . . . . .
Speaker configuration and impedance. . . . . .
Heat sink requirements . . . . . . . . . . . . . . . . .
Curves measured in reference design . . . . . .
Typical application schematics . . . . . . . . . . . .
Package outline . . . . . . . . . . . . . . . . . . . . . . . .
Handling information . . . . . . . . . . . . . . . . . . .
Soldering of SMD packages . . . . . . . . . . . . . .
Introduction to soldering. . . . . . . . . . . . . . . . .
Wave and reflow soldering . . . . . . . . . . . . . . .
Wave soldering. . . . . . . . . . . . . . . . . . . . . . . .
Reflow soldering. . . . . . . . . . . . . . . . . . . . . . .
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . .
Revision history . . . . . . . . . . . . . . . . . . . . . . .
Legal information . . . . . . . . . . . . . . . . . . . . . .
Data sheet status . . . . . . . . . . . . . . . . . . . . . .
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . .
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . .
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . .
Contact information . . . . . . . . . . . . . . . . . . . .
Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
32
33
33
35
35
36
36
37
42
46
47
47
47
47
47
48
49
50
51
51
51
51
51
51
52
52
54
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 29 July 2009
Document identifier: TDF8599B_1