Pb Free Product NCE1216 http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE1216 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic diagram ● VDS = -12V,ID = -16A RDS(ON) < 22mΩ @ VGS=-2.5V RDS(ON) < 18mΩ @ VGS=-4.5V ● Advanced trench MOSFET process technology ● Ultra low on-resistance with low gate charge Pin assignment Application ● PWM applications ● Load switch ● Battery charge in cellular handset DFN2X2-6L bottom view Package marking and ordering information Device Marking Device Device Package Reel Size Tape Width Quantity NCE1216 NCE1216 DFN2X2-6L - - - Absolute maximum ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID -16 A Drain Current -Pulsed (Note 1) IDM -65 A Maximum Power Dissipation PD 18 W TJ,TSTG -55 To 150 ℃ RθJC 6.9 ℃/W Operating Junction and Storage Temperature Range Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 Pb Free Product NCE1216 http://www.ncepower.com Electrical characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage V(BR) DSS VGS=0V ID=-250μA -12 - - V Zero Gate Voltage Drain Current IDSS VDS=-12V,VGS=0V - - -1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -0.4 -0.7 -1 V Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-6.7A - 11.5 18 mΩ VGS=-2.5V, ID=-6.2A - 14 22 mΩ VDS=-5V,ID=-6.7A 20 - - S - 2700 - PF - 680 - PF - 590 - PF - 11 - nS Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics gFS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics Crss VDS=-10V,VGS=0V, F=1.0MHz (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=-10V,ID=-1A - 35 - nS td(off) VGS=-4.5V,RGEN=10Ω - 30 - nS - 10 - nS - 35 48 nC - 5 - nC - 10 - nC - - -1.2 V - - -16 A Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-6V,ID=-10A, VGS=-4.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) VSD IS VGS=0V,IS=-8A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Wuxi NCE Power Semiconductor Co., Ltd Page 2 v1.0 Pb Free Product NCE1216 http://www.ncepower.com Typical Electrical and Thermal Characteristics ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms ID- Drain Current (A) Threshold Voltage (V) Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Drain Current Rdson On-Resistance(Ω) Rdson On-Resistance(Ω) Figure 3 Output Characteristics Vg ID- Drain Current (A) s Gate-Source Voltage (V) Figure 5 Rdson vs Vgs Wuxi NCE Power Semiconductor Co., Ltd Figure 6 Drain-Source On-Resistance Page 3 v1.0 Pb Free Product NCE1216 C Capacitance (pF) Is- Reverse Drain Current (A) http://www.ncepower.com Vds Drain-Source Voltage (V) Vsd Source-Drain Voltage (V) Figure 7 Capacitance vs Vds Wuxi NCE Power Semiconductor Co., Ltd Figure 8 Source- Drain Diode Forward Page 4 v1.0 Pb Free Product http://www.ncepower.com NCE1216 DFN2X2-6L Package Information Notes 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Wuxi NCE Power Semiconductor Co., Ltd Page 5 v1.0 Pb Free Product http://www.ncepower.com NCE1216 Attention ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all NCE power products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE power representative nearest you before using any NCE power products described or contained herein in such applications. NCE power assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE power products described or contained herein. Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all NCE power products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE power Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power product that you intend to use. This catalog provides information as of Sep, 2010. Specifications and information herein are subject to change without notice. Wuxi NCE Power Semiconductor Co., Ltd Page 6 v1.0