下载 Download

Pb Free Product
NCE4435
NCE P-Channel Enhancement Mode Power MOSFET
D
Description
The NCE4435 uses advanced trench technology to provide
G
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 4.5V.
S
General Features
Schematic diagram
● VDS = -30V,ID = -9.1A
RDS(ON) < 35mΩ @ VGS=-4.5V
RDS(ON) < 20mΩ @ VGS=-10V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Marking and pin assignment
Application
● Battery Switch
● Load switch
● Power management
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
4435
NCE4435
SOP-8
Ø330mm
12mm
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC =25℃
Continuous Drain Current (TJ =150℃)
Limit
Unit
-30
V
±20
V
-11
TC =70℃
ID
TA =25℃
TA =70℃
-9
-9.1
A
-7.2
(Note 1)
IDM
-50
A
Maximum Power Dissipation
PD
3.1
W
TJ,TSTG
-55 To 150
℃
RθJA
40
℃/W
Drain
Current-Pulsed
Operating Junction and Storage Temperature Range
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
Electrical Characteristics (TA=25℃unless otherwise noted)
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
Pb Free Product
NCE4435
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-30
-33
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=-30V,VGS=0V
-
-
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-1
-1.5
-3
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-9.1A
-
16
20
mΩ
VGS=-4.5V, ID=-6.9A
-
21
35
mΩ
VDS=-15V,ID=-9.1A
10
-
-
S
-
1600
-
PF
-
350
-
PF
-
300
-
PF
-
10
-
nS
Off Characteristics
On Characteristics
(Note 3)
Forward Transconductance
Dynamic Characteristics
gFS
(Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
Crss
VDS=-15V,VGS=0V,
F=1.0MHz
(Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=-15V, ID=-1A,
-
15
-
nS
td(off)
VGS=-10V,RGEN=6Ω
-
110
-
nS
70
-
nS
-
30
-
nC
-
5.5
-
nC
-
8
-
nC
-
-
-1.2
V
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=-15V,ID=-9.1A
VGS=-10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-2.1A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0
Pb Free Product
NCE4435
Typical Electrical and Thermal Characteristics
ton
tr
td(on)
toff
tf
td(off)
90%
VOUT
90%
INVERTED
10%
10%
90%
VIN
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
PD Power(W)
ID- Drain Current (A)
Figure 1:Switching Test Circuit
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 4 Drain Current
ID- Drain Current (A)
Rdson On-Resistance(Ω)
Figure 3 Power Dissipation
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 5 Output Characteristics
Wuxi NCE Power Semiconductor Co., Ltd
Figure 6 Drain-Source On-Resistance
Page 3
v1.0
Pb Free Product
ID- Drain Current (A)
Normalized On-Resistance
NCE4435
TJ-Junction Temperature(℃)
Vgs Gate-Source Voltage (V)
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(Ω)
Figure 7 Transfer Characteristics
Vds Drain-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Figure 10 Capacitance vs Vds
Vgs Gate-Source Voltage (V)
Is- Reverse Drain Current (A)
Figure 9 Rdson vs Vgs
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Wuxi NCE Power Semiconductor Co., Ltd
Figure 12 Source- Drain Diode Forward
Page 4
v1.0
Pb Free Product
ID- Drain Current (A)
NCE4435
Vds Drain-Source Voltage (V)
r(t),Normalized Effective
Transient Thermal Impedance
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
Pb Free Product
NCE4435
SOP-8 Package Information
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min.
Max.
Min.
Max.
A
1.350
1.750
0.053
0.069
A1
0.100
0.250
0.004
0.010
A2
1.350
1.550
0.053
0.061
b
0.330
0.510
0.013
0.020
c
0.170
0.250
0.006
0.010
D
4.700
5.100
0.185
0.200
E
3.800
4.000
0.150
0.157
E1
5.800
6.200
0.228
0.244
e
1.270(BSC)
0.050(BSC)
L
0.400
1.270
0.016
0.050
θ
0°
8°
0°
8°
Wuxi NCE Power Semiconductor Co., Ltd
Page 6
v1.0
Pb Free Product
NCE4435
Attention:
■
■
■
■
■
■
■
■
■
Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult
with your NCE power representative nearest you before using any NCE power products described or contained herein in
such applications.
NCE power assumes no responsibility for equipment failures that result from using products at values
that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)
listed in products specifications of any and all NCE power products described or contained herein.
Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,
and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,
and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states
that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’s products or equipment.
NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
design, redundant design, and structural design.
In the event that any or all NCE power products(including technical data, services) described or contained herein are
controlled under any of applicable local export control laws and regulations, such products must not be exported without
obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission
of NCE power Semiconductor CO.,LTD.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied
regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power
product that you intend to use.
This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.
Wuxi NCE Power Semiconductor Co., Ltd
Page 7
v1.0