Data Sheet

Freescale Semiconductor
Data Sheet: Technical Data
Document Number: MC9S08SF4
Rev. 4, 9/2011
MC9S08SF4
MC9S08SF4 Series
Features
• 8-Bit S08 Central Processor Unit (CPU)
– Up to 40 MHz CPU at 2.7 V to 5.5 V across temperature
range of –40 C to 125 C
– HC08 instruction set with added BGND instruction
– Support for up to 32 interrupt/reset sources
• On-Chip Memory
– 4 KB flash read/program/erase over full operating
voltage and temperature
– 128-byte random-access memory (RAM)
– Security circuitry to prevent unauthorized access to
RAM and flash contents
• Power-Saving Modes
– Two low power stop modes; reduced power wait mode
– Allows clocks to remain enabled to specific peripherals
in stop3 mode
• Clock Source Options
– Internal Clock Source (ICS) — Internal clock source
module containing a frequency-locked-loop (FLL)
controlled by an internal or external reference; precision
trimming of internal reference allows 0.2% resolution
and 1% deviation over 0–70 C and voltage, 2%
deviation over –40–85 C and voltage, or 3% deviation
over –40–125 C and voltage; supporting bus
frequencies up to 20 MHz
• System Protection
– Watchdog computer operating properly (COP) reset
with option to run from dedicated 1 kHz internal clock
source or bus clock
– Low-voltage detection with reset or interrupt; selectable
trip points
– Illegal opcode detection with reset
– Illegal address detection with reset
– Flash block protection
• Development Support
– Single-wire background debug interface
– Breakpoint capability to allow single breakpoint setting
during in-circuit debugging (plus two more breakpoints)
– On-chip in-circuit emulator (ICE) debug module
containing two comparators and nine trigger modes
20-Pin TSSOP
Case 948E
• Peripherals
– IPC — Prioritize interrupt sources besides inherent
CPU interrupt table; support up to 32 interrupt sources
and up to 4-level preemptive interrupt nesting
– ADC — 8-channel, 10-bit resolution; 2.5 s conversion
time; automatic compare function; temperature sensor;
internal bandgap reference channel; operation in stop;
fully functional from 2.7 V to 5.5 V
– TPM — One 40 MHz 6-channel and one 40 MHz
1-channel timer/pulse-width modulators (TPM)
modules; selectable input capture, output compare, or
buffered edge- or center-aligned PWM on each channel
– MTIM16 — Two 16-bit modulo timers
– PWT — Two 16-bit pulse width timers (PWT);
selectable driving clock, positive/negative/period
capture
– PRACMP — Two programmable reference analog
comparators with eight optional inputs for both positive
and negative inputs; 32-level internal reference voltages
scaled by selectable reference inputs
– IIC — Inter-integrated circuit bus module capable of
operation up to 100 kbps with maximum bus loading;
multi-master operation; programmable slave address;
interrupt-driven byte-by-byte data transfer; broadcast
mode; 10-bit addressing
– KBI — 4-pin keyboard interrupt module with software
selectable polarity on edge or edge/level modes
– FDS — Shut down output pin upon fault detection; the
fault sources can be optional enabled separately; the
output pin can be configured as output 1,0 and high
impedance when a fault occurs based on module
configuration
• Input/Output
– 18 GPIOs including one input-only pin and one
output-only pin
– Hysteresis and configurable pullup device on all input
pins; schmitt trigger on PWT input pins; configurable
slew rate and drive strength on all output pins.
• Package Options
– 16-pin TSSOP
– 20-pin TSSOP
This document contains information on a product under development. Freescale reserves the
right to change or discontinue this product without notice.
© Freescale Semiconductor, Inc., 2009-2011. All rights reserved.
16-Pin TSSOP
Case 948F
Table of Contents
1
2
3
MCU Block Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin Assignments . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . 5
3.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.2 Parameter Classification . . . . . . . . . . . . . . . . . . . 5
3.3 Absolute Maximum Ratings. . . . . . . . . . . . . . . . . 5
3.4 Thermal Characteristics. . . . . . . . . . . . . . . . . . . . 6
3.5 ESD Protection and Latch-Up Immunity . . . . . . . 7
3.6 DC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . 8
3.7 Supply Current Characteristics . . . . . . . . . . . . . 14
3.8 ICS Characteristics . . . . . . . . . . . . . . . . . . . . . . 16
3.9 AC Characteristics. . . . . . . . . . . . . . . . . . . . . . . 17
3.9.1 Control Timing . . . . . . . . . . . . . . . . . . . . . 18
3.9.2 Timer/PWM (TPM) Module Timing . . . . . 19
3.10 ADC Characteristics . . . . . . . . . . . . . . . . . . . . . 20
4
5
3.11 PRACMP Characteristics . . . . . . . . . . . . . . . . . .21
3.12 Flash Specifications . . . . . . . . . . . . . . . . . . . . . .22
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . .23
Package Information . . . . . . . . . . . . . . . . . . . . . . . . . .23
5.1 Mechanical Drawings . . . . . . . . . . . . . . . . . . . . .23
Revision History
The following revision history table summarizes changes contained in this document.
Revision
Date
Description of Changes
2
4/30/2009
Initial public release.
3
8/18/2009
Polished.
4
9/19/2011
Updated VAIN in the Table 12.
Related Documentation
Reference Manual
(MC9S08SF4RM)
Contains extensive product information including modes of operation, memory,
resets and interrupts, register definition, port pins, CPU, and all module information.
MC9S08SF4 Series MCU Data Sheet, Rev. 4
2
Freescale Semiconductor
1
MCU Block Diagram
The block diagram, Figure 1, shows the structure of the MC9S08SF4 MCU.
DEBUG MODULE
(DBG)
16-BIT MODULO TIMER
INTERRUPT PRIORITY
CONTROLLER (IPC)
TCLK
PTA0/KBI0/TCLK/IRQ
(MTIM16-1)
PTA1/KBI1/RESET
16-BIT MODULO TIMER
BDC
IRQ
WAKEUP
LVD
RESET
MODULE (TPM1)
FAULT DETECTION
& SHUTDOWN (FDS)
MODULE (TPM2)
PULSE WIDTH TIMER
(PWT1)
USER RAM
128 BYTES
PTA6/TPM1C4/FDSOUT4
FDSOUT[6:0]
PWTI1
TCLK
PWTI2
(PWT2)
TCLK
ANALOG COMPARATOR
(PRACMP2)
VDD
PTB0/TPM2C0/FDSOUT6
PTB1/PWTI1/ADC0
TPM2C0
TCLK
PULSE WIDTH TIMER
ANALOG COMPARATOR
(PRACMP1)
40 MHz INTERNAL CLOCK
SOURCE (ICS)
PTA4/TPM1C2/FDSOUT2
PTA7/TPM1C5/FDSOUT5
1-CH TIMER/PWM
PTB2/PWTI2/ADC1
PTB3/ACMP3/ADC2
PTB4/ACMP2/ADC3
PTB5/ACMP1/ADC4
ACMP3
ACMP2
ACMP1
ACMP0
ACMP3
ACMP2
ACMP1
ACMP0
PTB6/ACMP0/ADC5
PTB7/BKGD/MS
VOLTAGE REGULATOR
8-CH 10-BIT
ANALOG-TO-DIGITAL
CONVERTER(ADC)
INTER-INTERGRATED
CIRCUIT (IIC)
ADP[5:0]
ADP[6:7]
SCL
SDA
PORT C
VSS
TCLK
IRQ
USER Flash
4096 BYTES
PTA3/KBI3/TPM1C1/FDSOUT1
PTA5/TPM1C3/FDSOUT3
TPM1C[5:0]
PORT B
COP
KBI[3:0]
INTERRUPT (KBI)
6-CH TIMER/PWM
HCS08 SYSTEM CONTROL
RESETS AND INTERRUPTS
MODES OF OPERATION
POWER MANAGEMENT
PTA2/KBI2/TPM1C0/FDSOUT0
PORT A
4-PIN KEYBOARD
CPU
TCLK
(MTIM16-2)
HCS08 CORE
PTC0/ADC6/SCL
PTC1/ADC7/SDA
= Not available in the 16-pin TSSOP package
Figure 1. MC9S08SF4 Series Block Diagram
2
Pin Assignments
This section shows the pin assignments for the MC9S08SF4 series devices.
MC9S08SF4 Series MCU Data Sheet, Rev. 4
Freescale Semiconductor
3
VDD
PTA0/KBI0/TCLK/IRQ
PTA1/KBI1/RESET
PTA2/KBI2/TPM1C0/FDSOUT0
PTA3/KBI3/TPM1C1/FDSOUT1
PTA4/TPM1C2/FDSOUT2
PTA5/TPM1C3/FDSOUT3
PTA6/TPM1C4/FDSOUT4
PTA7/TPM1C5/FDSOUT5
PTB0/TPM2C0/FDSOUT6
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
VSS
PTC1/SDA/ADC7
PTC0/SCL/ADC6
PTB7/BKGD/MS
PTB6/ACMP0/ADC5
PTB5/ACMP1/ADC4
PTB4/ACMP2/ADC3
PTB3/ACMP3/ADC2
PTB2/PWTI2/ADC1
PTB1/PWTI1/ADC0
Figure 2. MC9S08SF4 in 20-Pin TSSOP Package
VDD
PTA0/KBI0/TCLK/IRQ
PTA1/KBI1/RESET
PTA2/KBI2/TPM1C0/FDSOUT0
PTA3/KBI3/TPM1C1/FDSOUT1
PTA4/TPM1C2/FDSOUT2
PTA5/TPM1C3/FDSOUT3
PTB0/TPM2C0/FDSOUT6
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VSS
PTB7/BKGD/MS
PTB6/ACMP0/ADC5
PTB5/ACMP1/ADC4
PTB4/ACMP2/ADC3
PTB3/ACMP3/ADC2
PTB2/PWTI2/ADC1
PTB1/PWTI1/ADC0
Figure 3. MC9S08SF4 in 16-Pin TSSOP Package
MC9S08SF4 Series MCU Data Sheet, Rev. 4
4
Freescale Semiconductor
Introduction
3
Electrical Characteristics
3.1
Introduction
This section contains electrical and timing specifications for the MC9S08SF4 series of microcontrollers
available at the time of publication.
3.2
Parameter Classification
The electrical parameters shown in this supplement are guaranteed by various methods. To give the
customer a better understanding the following classification is used and the parameters are tagged
accordingly in the tables where appropriate:
Table 1. Parameter Classifications
P
Those parameters are guaranteed during production testing on each individual device.
C
Those parameters are achieved by the design characterization by measuring a statistically relevant
sample size across process variations.
T
Those parameters are achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted. All values shown in the typical column are within this
category.
D
Those parameters are derived mainly from simulations.
NOTE
The classification is shown in the column labeled “C” in the parameter
tables where appropriate.
3.3
Absolute Maximum Ratings
Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not
guaranteed. Stress beyond the limits specified in Table 2 may affect device reliability or cause permanent
damage to the device. For functional operating conditions, refer to the remaining tables in this section.
This device contains circuitry protecting against damage due to high static voltage or electrical fields;
however, it is advised that normal precautions be taken to avoid application of any voltages higher than
maximum-rated voltages to this high-impedance circuit. Reliability of operation is enhanced if unused
inputs are tied to an appropriate logic voltage level (for instance, either VSS or VDD) or the programmable
pullup resistor associated with the pin is enabled.
MC9S08SF4 Series MCU Data Sheet, Rev. 4
Freescale Semiconductor
5
Thermal Characteristics
Table 2. Absolute Maximum Ratings
Rating
Symbol
Value
Unit
Supply voltage
VDD
–0.3 to 5.8
V
Maximum current into VDD
IDD
120
mA
Digital input voltage
VIn
–0.3 to VDD + 0.3
V
Instantaneous maximum current
Single pin limit (applies to all port pins)1, 2, 3
ID
25
mA
Tstg
–55 to 150
C
Storage temperature range
1
Input must be current limited to the value specified. To determine the value of the required
current-limiting resistor, calculate resistance values for positive (VDD) and negative (VSS) clamp
voltages, then use the larger of the two resistance values.
2
All functional non-supply pins are internally clamped to VSS and VDD.
3 Power supply must maintain regulation within operating V
DD range during instantaneous and
operating maximum current conditions. If positive injection current (VIn > VDD) is greater than
IDD, the injection current may flow out of VDD and could result in the external power supply going
out of regulation. Ensure external VDD load shunts current greater than the maximum injection
current. This will be the greatest risk when the MCU is not consuming power. Examples are: if
no system clock is present, or if the clock rate is very low (which would reduce overall power
consumption).
3.4
Thermal Characteristics
This section provides information about operating temperature range, power dissipation, and package
thermal resistance. Power dissipation on I/O pins is usually small compared to the power dissipation in
on-chip logic and voltage regulator circuits and it is user-determined rather than being controlled by the
MCU design. To take PI/O into account in power calculations, determine the difference between actual pin
voltage and VSS or VDD and multiply by the pin current for each I/O pin. Except in cases of unusually high
pin current (heavy loads), the difference between pin voltage and VSS or VDD will be small.
Table 3. Thermal Characteristics
Rating
Symbol
Value
Unit
Operating temperature range
(packaged)
TA
TL to TH
–40 to 125
C
Thermal resistance (single-layer board)
20-pin TSSOP
16-pin TSSOP
JA
115
123
C/W
Thermal resistance (four-layer board)
20-pin TSSOP
16-pin TSSOP
JA
76
75
C/W
The average chip-junction temperature (TJ) in C can be obtained from:
TJ = TA + (PD  JA)
Eqn. 1
MC9S08SF4 Series MCU Data Sheet, Rev. 4
6
Freescale Semiconductor
ESD Protection and Latch-Up Immunity
Where:
TA = Ambient temperature, C
JA = Package thermal resistance, junction-to-ambient, C/W
PD = Pint PI/O
Pint = IDD  VDD, Watts — chip internal power
PI/O = Power dissipation on input and output pins — user determined
For most applications, PI/O  Pint and can be neglected. An approximate relationship between PD and TJ
(if PI/O is neglected) is:
PD = K  (TJ + 273C)
Eqn. 2
Solving Equation 1 and Equation 2 for K gives:
K = PD  (TA + 273C) + JA  (PD)2
Eqn. 3
Where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring
PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by
solving Equation 1 and Equation 2 iteratively for any value of TA.
3.5
ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions must be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
During the device qualification ESD stresses were performed for the human body model (HBM) and the
charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
MC9S08SF4 Series MCU Data Sheet, Rev. 4
Freescale Semiconductor
7
DC Characteristics
Table 4. ESD and Latch-up Test Conditions
Model
Human
Body
Description
Symbol
Value
Unit
Series resistance
R1
1500

Storage capacitance
C
100
pF
Number of pulses per pin
—
1
Minimum input voltage limit
—
–2.5
V
Maximum input voltage limit
—
7.5
V
Latch-up
Table 5. ESD and Latch-Up Protection Characteristics
No.
1
3.6
Rating1
Symbol
Min
Max
Unit
1
Human body model (HBM)
VHBM
2000
—
V
2
Charge device model (CDM)
VCDM
500
—
V
3
Latch-up current at TA = 125 C
ILAT
100
—
mA
Parameter is achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted.
DC Characteristics
This section includes information about power supply requirements and I/O pin characteristics.
Table 6. DC Characteristics (Temperature Range = –40 to 125 C Ambient)
Num
C
Symbol
Min
Typical
Max
Unit
1
P
Supply voltage (run, wait, and stop modes.)
VDD
2.7
—
5.5
V
P
Low-voltage detection threshold — high range
(VDD falling)
(VDD rising)
VLVDH
3.9
4.0
—
—
4.1
4.2
V
V
P
Low-voltage detection threshold — low range
(VDD falling)
(VDD rising)
VLVDL
2.48
2.54
2.56
2.62
2.64
2.7
V
V
P
Low-voltage warning threshold — high range
(VDD falling)
(VDD rising)
VLVWH
2.66
2.72
—
—
2.82
2.88
V
V
P
Low-voltage warning threshold — low range
(VDD falling)
(VDD rising)
VLVWL
2.84
2.90
—
—
3.00
3.06
V
V
4
D
Low-voltage inhibit reset/recover hysteresis
5V
3V
Vhys
—
—
100
60
—
—
mV
mV
5
P
Bandgap voltage reference
Factory trimmed at VDD = 3.0 V, Temp = 25 C
VBG
1.185
1.200
1.215
V
6
P
Input high voltage (2.7 V  VDD 5.5 V) (all
digital inputs)
VIH
0.65 × VDD
—
VDD + 0.3
V
2
3
Parameter
MC9S08SF4 Series MCU Data Sheet, Rev. 4
8
Freescale Semiconductor
DC Characteristics
Table 6. DC Characteristics (Temperature Range = –40 to 125 C Ambient) (continued)
Num
C
7
P
8
9
Parameter
Symbol
Min
Typical
Max
Unit
Input low voltage (2.7 V  VDD 5.5 V) (all
digital inputs)
VIL
VSS – 0.3
—
0.35 × VDD
V
D
Input hysteresis (all digital inputs)
Vhys
0.06 × VDD
—
0.30 × VDD
V
P
Input Leakage Current (pins in high ohmic
input mode)1
or V
V =V
Iin
–1
—

A
P
Internal pullup resistors2
RPU
17.5
40.0
52.5
k
P
Internal pulldown resistor (IRQ)
RPD
12.5
—
62.5
k
C
Output high voltage All I/O pins, low-drive
strength, 5 V, Iload = –4 mA
VDD – 1.5
—
—
V
P
Output high voltage All I/O pins, low-drive
strength, 5 V, Iload = –2 mA
VDD – 0.8
—
—
V
C
Output high voltage All I/O pins, low-drive
strength, 3 V, Iload = –1 mA
VDD – 0.8
—
—
V
VDD – 1.5
—
—
V
in
10
11
DD5
SS5
V
OH
C
Output high voltage All I/O pins, high-drive
strength, 5 V, Iload = –15 mA
P
Output high voltage All I/O pins, high-drive
strength, 5 V, Iload = –10 mA
VDD – 0.8
—
—
V
C
Output high voltage All I/O pins, high-drive
strength, 3 V, Iload = –5 mA
VDD – 0.8
—
—
V
C
Output low voltage All I/O pins, low-drive
strength, 5 V, Iload = 4 mA
—
—
1.5
V
P
Output low voltage All I/O pins, low-drive
strength, 5 V, Iload = 2 mA
—
—
0.8
V
C
Output low voltage All I/O pins, low-drive
strength, 3 V, Iload = 1 mA
—
—
0.8
V
C
Output low voltage All I/O pins, high-drive
strength, 5 V, Iload = 15 mA
—
—
1.5
V
P
Output low voltage All I/O pins, high-drive
strength, 5 V, Iload = 10 mA
—
—
0.8
V
C
Output low voltage All I/O pins, high-drive
strength, 3 V, Iload = 5 mA
—
—
0.8
V
12
V
OL
Maximum total IOH for all port pins
D
13
5V
3V
|IOHT|
—
—
—
—
100
60
mA
5V
3V
|IOLT|
—
—
—
—
100
60
mA
—
—
—
—
0.2
5
mA
mA
—
—
7
pF
Maximum total IOL for all port pins
D
14
D
dc injection current2, 3, 4, 5
VIN < VSS, VIN > VDD
Single pin limit
Total MCU limit, includes sum of all stressed
pins
15
D
Input capacitance (all non-supply pins)
|IIC|
CIn
MC9S08SF4 Series MCU Data Sheet, Rev. 4
Freescale Semiconductor
9
DC Characteristics
1
2
3
4
5
Maximum leakage current occurs at a maximum operating temperature. The current decreases by approximately one-half for
each 8 C to 12 C in the temperature range from 50 C to 125 C.
Measurement condition for pull resistors: VIn = VSS for pullup and VIn = VDD for pulldown.
All functional non-supply pins are internally clamped to VSS and VDD.
Input must be current limited to the value specified. To determine the value of the required current-limiting resistor, calculate
resistance values for positive and negative clamp voltages, then use the larger of the two values.
Power supply must maintain regulation within operating VDD range during instantaneous and operating maximum current
conditions. If positive injection current (VIn > VDD) is greater than IDD, the injection current may flow out of VDD and could result
in external power supply going out of regulation. Ensure external VDD load shunts current greater than maximum injection
current. This is the greatest risk when the MCU is not consuming power. Examples are: if no system clock is present, or if the
clock rate is very low (which reduces overall power consumption).
Typical Low-Side Driver (LDS) Characteristics
VDD = 5 V, PORTA, VOL Vs IOL
6
5
T=-40C
V OL(V)
4
T=0C
T=25C
3
T=85C
T=105C
2
T=125C
1
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
IOL(mA)
Figure 4. Typical Low-Side Driver (Sink) Characteristics
Low Drive (PTxDSn = 0), VDD = 5.0 V, VOL vs. IOL
MC9S08SF4 Series MCU Data Sheet, Rev. 4
10
Freescale Semiconductor
DC Characteristics
Typical Low-Side Driver (LDS) Characteristics
VDD = 3 V, PORTA, VOL Vs IOL
3.5
3
T=-40C
V OL(V)
2.5
T=0C
2
T=25C
T=85C
1.5
T=105C
1
T=125C
0.5
0
1
2
3
4
5
IOL(mA)
Figure 5. Typical Low-Side Driver (Sink) Characteristics
Low Drive (PTxDSn = 0), VDD = 3.0 V, VOL vs. IOL
Typical Low-Side Driver (HDS) Characteristics
VDD = 5 V, PORTA, VOL Vs IOL
1.20
1.00
T=-40C
V OL(V)
0.80
T=0C
T=25C
0.60
T=85C
T=105C
0.40
T=125C
0.20
0.00
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
IOL(mA)
Figure 6. Typical Low-Side Driver (Sink) Characteristics
High Drive (PTxDSn = 1), VDD = 5.0 V, VOL vs. IOL
MC9S08SF4 Series MCU Data Sheet, Rev. 4
Freescale Semiconductor
11
DC Characteristics
Typical Low-Side Driver (HDS) Characteristics
VDD = 3 V, PORTA, VOL Vs IOL
1.8
V OL(V)
1.6
1.4
T=-40C
1.2
T=0C
1
T=25C
0.8
T=85C
0.6
T=85
0.4
T=125C
0.2
0
1
2
3
4
5
6
7
8
9
10
11
12
13
IOL(mA)
Figure 7. Typical Low-Side Driver (Sink) Characteristics
High Drive (PTxDSn = 1), VDD = 3.0 V, VOL vs. IOL
Typical High-Side Driver (LDS) Characteristics
VDD = 5 V, PORTA, VOH Vs IOH
6.00
5.00
T=-40C
V OH(V)
4.00
T=0C
T=25C
3.00
T=85C
T=105C
2.00
T=125C
1.00
0.00
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
IOH(mA)
Figure 8. Typical High-Side Driver (Source) Characteristics
Low Drive (PTxDSn = 0), VDD = 5.0 V, VOH vs. IOH
MC9S08SF4 Series MCU Data Sheet, Rev. 4
12
Freescale Semiconductor
DC Characteristics
Typical High-Side Driver (LDS) Characteristics
VDD = 3 V, PORTA, VOH Vs IOH
3.5
3
T=-40C
V OH(V)
2.5
T=0C
2
T=25C
T=85C
1.5
T=105C
1
T=125C
0.5
0
0
-1
-2
-3
IOH(mA)
Figure 9. Typical High-Side Driver (Source) Characteristics
Low Drive (PTxDSn = 0), VDD = 3.0 V, VOH vs. IOH
Typical High-Side Driver (HDS) Characteristics
VDD = 5 V, PORTA, VOH Vs IOH
5.20
5.00
V OH(V)
4.80
4.60
T=-40C
4.40
T=0C
4.20
T=25C
4.00
T=85C
3.80
T=105C
3.60
T=125C
3.40
3.20
3.00
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-11
-12
-13
-14
-15
-16
-17
-18
-19
-20
IOH(mA)
Figure 10. Typical High-Side Driver (Source) Characteristics
High Drive (PTxDSn = 1), VDD = 5.0 V, VOH vs. IOH
MC9S08SF4 Series MCU Data Sheet, Rev. 4
Freescale Semiconductor
13
Supply Current Characteristics
Typical High-Side Driver (HDS) Characteristics
VDD = 3 V, PORTA, VOH Vs IOH
3.5
3
T=-40C
V OH(V)
2.5
T=0C
2
T=25C
1.5
T=85C
T=105C
1
T=125C
0.5
0
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-11
-12 -13
-14
-15
IOH(mA)
Figure 11. Typical High-Side Driver (Source) Characteristics
High Drive (PTxDSn = 1), VDD = 3.0 V, VOH vs. IOH
3.7
Supply Current Characteristics
This section includes information about power supply current in various operating modes.
Table 7. Supply Current Characteristics
Num
1
2
3
4
5
6
C
P
Parameter
Symbol
Run supply current3 measured at
(CPU clock = 2 MHz, fBus = 1 MHz)
RIDD
Run supply current3 measured at
(CPU clock = 16 MHz, fBus = 8 MHz)
RIDD
Run mode supply current3 measured at
(CPU clock = 40 MHz, fBus = 20 MHz)
RIDD
Wait mode supply current4 measured at
(fBus = 8 MHz)
WIDD
D
Wait mode supply current4 measured at
( fBus = 20 MHz)
WIDD
P
Stop2 mode supply current
D
P
D
P
D
P
D
P
P
D
D
–40 to 85 C
–40 to 125 C
–40 to 85C
–40 to 125C
VDD (V)
Typical1
Max2
5
1.75
1.77
3
1.71
1.73
5
5.69
6.25
3
4.63
4.66
5
11.53
12.00
3
10.39
11.00
5
3.95
4.54
3
3.58
4.00
5
8.36
9.62
3
7.97
8.07
5
1.99
18.47
100
S2IDD
3
1.95
Unit
mA
mA
mA
mA
mA
A
16.9
90
MC9S08SF4 Series MCU Data Sheet, Rev. 4
14
Freescale Semiconductor
Supply Current Characteristics
Table 7. Supply Current Characteristics (continued)
Num
C
P
7
Parameter
–40 to 85 C
–40 to 125 C
P
–40 to 85 C
–40 to 125 C
D
9
10
11
12
13
14
15
16
17
18
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
VDD (V)
Typical1
Max2
5
2
18.4
Unit
Stop3 mode supply current
D
8
Symbol
100
S3IDD
PRACMP (PRG disabled) adder to stop3,
25 C
—
PRACMP (PRG enabled) adder to stop3,
25 C
—
ADC adder to stop2 or stop3, 25 C
—
LVD adder to stop3 (LVDE = LVDSE = 1)
—
Adder to stop3 for oscillator enabled
(IREFSTEN = 1)
—
TPM1 and TPM2 adder to run mode, 25 C
(CPU clock = 40 MHz, fBus = 20 MHz)
—
PWT1 and PWT2 adder to run mode, 25 C
(CPU clock = 40 MHz, fBus = 20 MHz)
—
PRACMP adder to run mode, 25 C
(CPU clock = 40 MHz, fBus = 20 MHz)
—
MTIM1 and MTIM2 adder to run mode, 25 C
(CPU clock = 40 MHz, fBus = 20 MHz)
—
ADC adder to run mode, 25 C
(CPU clock = 40 MHz, fBus = 20 MHz)
—
IIC adder to run mode, 25 C
(CPU clock = 40 MHz, fBus = 20 MHz)
—
A
16.82
3
1.97
5
28.87
—
nA
3
27.06
—
nA
5
79.42
—
nA
3
57.4
—
nA
5
25
—
nA
3
6
—
nA
5
83.52
—
nA
3
83.52
—
nA
5
0.03
—
A
3
0.01
—
A
5
0.16
—
mA
3
0.18
—
mA
5
0.43
—
mA
3
0.41
—
mA
5
0.35
—
mA
3
0.35
—
mA
5
0.26
—
mA
3
0.24
—
mA
5
0.42
—
mA
3
0.32
—
mA
5
0.56
—
mA
3
0.53
—
mA
90
Typicals are measured at 25 C.
Values given here are preliminary estimates prior to completing characterization.
3 All modules except ADC active, and does not include any dc loads on port pins.
4 Most customers are expected to find that the auto-wakeup from a stop mode can be used instead of the higher current wait mode.
1
2
MC9S08SF4 Series MCU Data Sheet, Rev. 4
Freescale Semiconductor
15
ICS Characteristics
Typical RIDD (VDD = 5 V, ADC off) Vs Bus Frequency
12.0000
10.0000
T=-40C
T=0C
T=25C
T=85C
T=125C
mA
8.0000
6.0000
4.0000
2.0000
0.0000
1
4
8
20
Bus Frequency
Figure 12. Typical Run IDD vs. Bus Freq. (FEI) (ADC off)
3.8
ICS Characteristics
Refer to Figure 13 for crystal or resonator circuits.
Table 8. ICS Specifications (Temperature Range = –40 to 125 C Ambient )
No.
C
Characteristic
Symbol
Minimum Typical1 Maximum
Unit
1
T Internal reference start-up time
tIRST
—
60
100
s
2
P Average internal reference frequency — trimmed
fint_t
—
39.0625
—
kHz
P DCO output frequency
range — trimmed
P
fdco_t
16
—
20
3
32
—
40
–1.0 to 0.5
3
–1.0 to 0.5
2
0.5

Low range (DRS = 00)
Middle range (DRS = 10)
4
Total deviation of DCO output from trimmed
2
P frequency
Over full voltage and temperature range of –40 C
to 125 C
5
Total deviation of DCO output from trimmed
frequency
D
Over full voltage and temperature range of –40 C
to 85 C
6
Total deviation of DCO output from trimmed
frequency
D
Over fixed voltage and temperature range of 0 to
70 C
7
C FLL acquisition time2,3
8
C
Long term jitter of DCO output clock (averaged
over a 2 ms interval) 4
fdco_t
MHz
—
%fdco
tAcquire
—
—
1
ms
CJitter
—
0.02
0.2
%fdco
MC9S08SF4 Series MCU Data Sheet, Rev. 4
16
Freescale Semiconductor
AC Characteristics
Data in the Typical column was characterized at 5.0 V, 25 C, or the typical recommended value.
This parameter is characterized and not tested on each device.
3
This specification applies to any time the FLL reference source or reference divider is changed, trim value changed,
DMX32 bit changed, DRS bit changed, or changing from FLL disabled (FBELP, FBILP) to FLL enabled (FEI, FEE, FBE,
and FBI). If a crystal/resonator is being used as the reference, this specification assumes it is already running.
4 Jitter is the average deviation from the programmed frequency measured over the specified interval at the maximum
fBus. Measurements are made with the device powered by filtered supplies and clocked by a stable external clock signal.
Noise injected into the FLL circuitry via VDD and VSS and a variation in the crystal oscillator frequency increases the
CJitter percentage for a given interval.
1
2
1.00%
0.50%
Deviation (%)
0.00%
-60
-40
-20
0
20
40
60
80
100
120
-0.50%
-1.00%
TBD
-1.50%
-2.00%
Temperature
Figure 13. Deviation of DCO Output from Trimmed Frequency (20 MHz, 5.0 V)
3.9
AC Characteristics
This section describes AC timing characteristics for each peripheral system.
MC9S08SF4 Series MCU Data Sheet, Rev. 4
Freescale Semiconductor
17
AC Characteristics
3.9.1
Control Timing
Table 9. Control Timing
Symbol
Minimum
Typical1
Maximum
Unit
fBus
1
—
20
MHz
textrst
100
—
—
ns
IRQ pulse width
Asynchronous path2
Synchronous path3
tILIH, tIHIL
100
1.5 tcyc
—
—
ns
KBIPx pulse width
Asynchronous path2
Synchronous path3
tILIH, tIHIL
100
1.5 tcyc
—
—
ns
tRise, tFall
—
—
3
30
—
—
ns
BKGD/MS setup time after issuing background debug force
reset to enter user or BDM modes
tMSSU
500
—
—
ns
BKGD/MS hold time after issuing background debug force
reset to enter user or BDM modes 5
tMSH
100
—
—
s
Parameter
Bus frequency (tcyc = 1/fBus)
2
External reset pulse width
Port rise and fall time (load = 50 pF)4
Slew rate control disabled (PTxSE = 0)
Slew rate control enabled (PTxSE = 1)
Data in Typical column was characterized at 5.0 V, 25 C.
This is the shortest pulse that is guaranteed to be recognized.
3 This is the minimum pulse width that is guaranteed to pass through the pin synchronization circuitry. Shorter pulses may or
may not be recognized. In stop mode, the synchronizer is bypassed so shorter pulses can be recognized in that case.
4 Timing is shown with respect to 20% V
DD and 80% VDD levels. Temperature range –40 C to 125 C.
5 To enter BDM mode following a POR, BKGD/MS should be held low during the power-up and for a hold time of t
MSH after VDD
rises above VLVD.
1
2
textrst
RESET PIN
Figure 14. Reset Timing
tIHIL
IRQ/KBIPx
IRQ/KBIPx
tILIH
Figure 15. IRQ/KBIPx Timing
MC9S08SF4 Series MCU Data Sheet, Rev. 4
18
Freescale Semiconductor
AC Characteristics
3.9.2
Timer/PWM (TPM) Module Timing
Synchronizer circuits determine the shortest input pulses that can be recognized or the fastest clock that
can be used as the optional external source to the timer counter. These synchronizers operate from the
current bus rate clock.
Table 10. TPM/MTIM Input Timing
Function
Symbol
Min
Max
Unit
External clock frequency
fTCLK
dc
ftimer/4
MHz
External clock period
tTCLK
4
—
tcyc
External clock high time
tclkh
1.5
—
tcyc
External clock low time
tclkl
1.5
—
tcyc
Input capture pulse width for TPM
tICPW
1.5
—
tcyc
Timer clock frequency
ftimer
—
40
MHz
tText
tclkh
TCLK
tclkl
Figure 16. Timer External Clock
tICPW
TPMCHn
TPMCHn
tICPW
Figure 17. Timer Input Capture Pulse
MC9S08SF4 Series MCU Data Sheet, Rev. 4
Freescale Semiconductor
19
ADC Characteristics
3.10
ADC Characteristics
Table 11. ADC Characteristics
Num
C
D
1
D
D
2
D
D
3
D
Supply current
ADLPC = 1
ADLSMP = 0
ADCO = 1
Supply current
ADLPC = 0
ADLSMP = 1
ADCO = 1
VDDA 3.6 V
(3.0 V Typ)
VDDA 5.5 V
(5.0 V Typ)
VDDA 3.6 V
(3.0 V Typ)
VDDA 5.5 V
(5.0 V Typ)
VDDA 3.6 V
(3.0 V Typ)
VDDA 5.5 V
(5.0 V Typ)
VDDA 3.6V
(3.0 V Typ)
Min
Typical1
Max
—
110
—
—
130
—
—
200
—
—
220
—
—
320
—
—
360
—
—
580
—
—
660
—
IDDA
—
<1
100
nA
Symb
Unit
A
IDDA
A
IDDA
D
Supply current
Stop, Reset,
Module Off
D
Ref voltage high
—
VREFH
2.7
VDDA
VDDA
V
D
Ref coltage low
—
VREFL
VSSA
VSSA
VSSA
V
0.4
—
8.0
D
7
D
D
8
D
ADC conversion
clock
ADC
asynchronous
clock source
D
9
Conversion time
VDDA 5.5V
(5.0 V Typ)
High speed
(ADLPC = 0)
Low power
(ADLPC = 1)
High speed
(ADLPC = 0)
Low power
(ADLPC = 1)
Short sample
(ADLSMP = 0)
D
Long sample
(ADLSMP = 1)
D
Short sample
(ADLSMP = 0)
10
Sample time
D
Long sample
(ADLSMP = 1)
Comment
A
IDDA
D
4
6
Supply current
ADLPC = 1
ADLSMP = 1
ADCO = 1
Conditions
Supply current
ADLPC = 0
ADLSMP = 0
ADCO = 1
D
5
Characteristic
Over
temperature
(Typ 25C)
A
IDDA
fADCK
0.4
—
4.0
2.5
4
6.6
fADACK
1.25
2
3.3
20
20
23
40
40
43
4
4
4
24
24
24
tADC
tADS
MHz
tADCK =
1/fADCK
MHz
tADACK =
1/fADACK
tADCK
cycles
Add 2 to 5
tBus =1/fBus
cycles
tADCK
cycles
11
D
Input voltage
—
VADIN
VREFL
—
VREFH
V
12
D
Input
capacitance
—
CADIN
—
7
10
pF
Not Tested
13
D
Input impedance
—
RADIN
—
5
15
k
Not Tested
14
D
Analog source
impedance
—
RAS
—
—
102
k
External to
MCU
MC9S08SF4 Series MCU Data Sheet, Rev. 4
20
Freescale Semiconductor
PRACMP Characteristics
Table 11. ADC Characteristics (continued)
Num
15
16
17
18
19
20
C
Characteristic
D
Ideal resolution
(1LSB)
10-bit mode
Total unadjusted
error
10-bit mode
Differential
non-linearity3
10-bit mode
Integral
non-linearity
10-bit mode
D
D
D
P
C
P
C
D
D
D
D
Conditions
8-bit mode
8-bit mode
8-bit mode
8-bit mode
10-bit mode
Zero-scale error
8-bit mode
10-bit mode
Full-scale error
21
D
Quantization
error
22
P
Temp sensor
slope
23
P
Temp sensor
voltage
8-bit mode
Symb
RES
ETUE
DNL
INL
EZS
EFS
Min
Typical1
Max
2.637
4.883
5.371
10.547
19.53
21.48
0
1.5
3.5
0
0.7
1.0
0
0.5
1.0
0
0.3
0.5
0
0.5
1.0
0
0.3
0.5
0
1.5
3.1
0
0.5
0.7
0
1.0
1.5
0
0.5
0.5
Unit
Comment
mV
VREFH/2N
LSB
Includes
quantization
LSB
LSB
LSB
VADIN = VSSA
LSB
VADIN = VDDA
8-bit mode is
not truncated
10-bit mode
EQ
—
—
0.5
LSB
–40–25 C
—
—
3.266
—
—
25–125 C
—
—
3.638
—
—
—
—
—
1.396
—
—
Typical values assume VDDA = 5.0 V, Temp = 25 C, fADCK = 1.0 MHz unless otherwise stated. Typical values are for reference
only and are not tested in production.
2 At 4 MHz, for maximum frequency, use proportionally lower source impedance.
3 Monotonicity and no-missing-codes guaranteed
1
3.11
PRACMP Characteristics
Table 12. PRACMP Specifications
Num
C
Characteristic
Symbol
Min
Typical
Max
Unit
VPWR
2.70
—
5.50
V
1
P Supply voltage
2
C Supply current (active) (PRG enabled)
IDDACT1
—
—
60
A
3
C Supply current (active) (PRG disabled)
IDDACT2
—
—
40
A
4
C Supply current (ACMP and PRG all disabled)
IDDDIS
—
—
2
nA
5
C Analog input voltage
VAIN
VSS – 0.3
—
VDD
V
6
C Analog input offset voltage
VAIO
—
5
40
mV
7
C Analog comparator hysteresis
VH
3.0
—
20.0
mV
8
C Analog input leakage current
IALKG
—
—
1
nA
9
C Analog comparator initialization delay
tAINIT
—
—
1.0
s
MC9S08SF4 Series MCU Data Sheet, Rev. 4
Freescale Semiconductor
21
Flash Specifications
Table 12. PRACMP Specifications (continued)
Num
C
Characteristic
Symbol
Min
Typical
Max
Unit
10
D Programmable reference generator inputs
VIn1
(VDD50)
2.7
5.0
5.5
V
11
D Programmable reference generator inputs
VIn2
(VDD25)
2.25
2.5
2.75
V
12
C Programmable reference generator step size
Vstep
–0.25
0
0.25
LSB
13
P Programmable reference generator voltage range
Vprgout
VIn/32
—
Vin
V
3.12
Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory.
Program and erase operations do not require any special power sources other than the normal VDD supply.
For more detailed information about program/erase operations, see the Memory section.
Table 13. Flash Characteristics
Characteristic
Symbol
Min
Typical
Max
Unit
Supply voltage for program/erase
–40C to 125C
Vprog/erase
2.7
—
5.5
V
Supply voltage for read operation
VRead
2.7
—
5.5
V
fFCLK
150
—
200
kHz
tFcyc
5
—
6.67
s
Internal FCLK
frequency1
Internal FCLK period (1/FCLK)
Byte program time (random
Byte program time (burst
location)(2)
mode)(2)
tprog
9
tFcyc
tBurst
4
tFcyc
Page erase
time2
tPage
4000
tFcyc
Mass erase
time(2)
tMass
20,000
tFcyc
endurance3
Program/erase
TL to TH = –40 C to 125 C
T = 25C
Data retention4
tD_ret
10,000
—
—
100,000
—
—
cycles
15
100
—
years
1
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
3
Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how Delta
defines typical endurance, please refer to engineering bulletin Typical Endurance for Nonvolatile Memory (document
EB619/D).
4 Typical data retention values are based on intrinsic capability of the technology measured at a high temperature and de-rated
to 25 C using the Arrhenius equation. For additional information on how Delta defines typical data retention, please refer to
engineering bulletin Typical Data Retention for Nonvolatile Memory (document EB618/D).
2
MC9S08SF4 Series MCU Data Sheet, Rev. 4
22
Freescale Semiconductor
Mechanical Drawings
4
Ordering Information
This section contains ordering information for the device numbering system.
Example of the device numbering system:
MC 9 S08 SF 4
X XX
Status
(MC = Fully Qualified)
Package designator (see Table 14)
Temperature range
(M= –40 C to 125 C)
(V = –40 C to 105 C)
(C = –40 C to 85 C)
Approximate flash size in kbytes
Memory
(9 = Flash-based)
Core
Family
5
Package Information
Table 14. Package Descriptions
Pin Count
Package Type
Abbreviation
Designator
Case No.
Document No.
20
Thin Shrink Small Outline Package
TSSOP
TJ
948E
98ASH70169A
16
Thin Shrink Small Outline Package
TSSOP
TG
948F
98ASH70247A
5.1
Mechanical Drawings
The following pages are mechanical drawings for the packages described in Table 14. For the latest
available drawings, please visit our web site (http://www.freescale.com) and enter the package’s document
number into the keyword search box.
MC9S08SF4 Series MCU Data Sheet, Rev. 4
Freescale Semiconductor
23
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MC9S08SF4
Rev. 4
9/2011