Product Brief Reverse Conducting Drives Fast Higher Efficiency at High Speed Switching Applications A high speed switching capable variant of the well established RC-Drives Automotive IGBT was developed to meet the rising demand for high frequency applications. This new variant is called RC-Drives Fast Automotive (RC-DFA). Eoff vs. VCEsat Rg = 40Ω; IC = 4A; T = 175°C Maximum junction temperature 175°C Very tight parameter distribution RC-DA Smooth switching performance leading to low EMI emission Best-in-Class current versus package size performance Complementary to RC-DA devices 0.10 Eoff [mJ] Operating range of DC up to 30kHz Short circuit capability of 5µs 0.14 0.12 Features 60% reduction in Eoff @ 175°C 0.08 0.06 RC-DFA 0.04 0.02 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 VCEsat [V] Benefits Excellent cost/performance for hard switching applications Outstanding temperature stability Very good EMI behavior Up to 60% space saving on the PCB Higher reliability due to monolithically integrated IGBT and diode due to less thermal cycling during switching RC-DA 0Hz RC-DFA 5-8kHz 30kHz Efficiency Comparison: 60% reduction in Eoff@175°C A typical automotive application for this family amongst others are Piezo Injection systems. Within these system space is limited and therefore DPAK solutions are most required. Piezo Injection is used for diesel and gasoline systems to improve efficiency and reduce the fuel consumption. The system itself is split into four sections with different requirements to its components. A flyback converter transforms the low-volt battery voltage to a high voltage of several hundred volts. These high-voltage is used to charge/discharge the Piezo Injection elements. Especially these charging/discharging switches (IGBT/diode) are operating at high average switching frequencies above 10kHz over the injection cycle. Correspondingly fast switching IGBTs and diodes are the most suitable solution. www.infineon.com/discrete-automotive-igbt Applications Piezo Injection HID Lighting Low Power Motor Drives Product Brief Reverse Conducting Drives Fast Higher Efficiency at High Speed Switching Applications Compared to competition a significant reduction of turn-off losses has been achieved resulting in a decrease of the total switching and thus total power losses. Improved performance leads to higher efficiency and lower junction temperature which as well has a positive influence on the product lifetime and reliability. Eoff: Infineon vs. Competition Ic = 10A; Vge = 15V, Rg = 121Ω; Tj=150°C 0.35 30% improvement in Eoff @ 150°C 0.30 Eoff [mJ] 0.25 0.20 0.15 0.10 0.05 0.00 IKD06N60RFA Competitor Efficiency Comparison: 30% improvement in Eoff@150°C For the stop switch section, the conduction losses are dominating the power losses. Hence, Infineon’s Reverse Conducting Drives Fast (RC-DFA) as well as its complementary variant, the Reverse Conducting Drives (RC-DA) technology can be used for such a stop switch. The cylinder select switches (IGBT/diode) are operating at low average frequencies below 1kHz for charging and discharging. Here RC-DA would be Infineon’s preferred suggestion but also the RC-DFA is a suitable semiconductor product for these switches. Product Portfolio Reverse Conducting Drives Fast Product Package Blocking Voltage IKD04N60RA IC TC = 100°C Body Diode 175°C Vf @ IC 4A IKD06N60RA 6A IKD10N60RA 10A IKD15N60RA IKD03N60RFA VCEsat @ Ic 25°C DPAK 600V Qrr @ 25 °C / 175°C 0.22 / 0.52µC 1.65V 1.85V 1.7V 0.37 / 0.80µC 0.56 / 1.22µC 15A 0.76 / 1.70µC 2.5A 0.06 / 0.19µC IKD04N60RFA 4A IKD06N60RFA 6A IKD10N60RFA 10A 0.27 / 0.62µC IKD15N60RFA 15A 0.42 / 1.00µC Published by Infineon Technologies Austria AG 9500 Villach, Austria © 2014 Infineon Technologies AG. All Rights Reserved. Visit us: www.infineon.com Order Number: B114-I0002-V1-7600-AP-EC-P-DB2014-0032 Date: 10/ 2014 0.09 / 0.26µC 2.2V Attention please! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). 2.3V 2.1V 0.16 / 0.34µC Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. 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