BSR606N Data Sheet (405 KB, EN)

BSR606N
OptiMOS™-3 Small-Signal-Transistor
Product Summary
Features
VDS
• N-channel
RDS(on),max
• Enhancement mode
• Logic level (4.5V rated)
60
V
VGS=10 V
60
mW
VGS=4.5 V
90
ID
2.3
A
• Avalanche rated
• Qualified according to AEC Q101
PG-SC59
• 100%lead-free; Halogen-free; RoHS compliant
3
1
2
Type
Package
Tape and Reel Information
BSR606N
PG-SC59
H6327: 3000 pcs/ reel
Marking
LIs
Halogen-
Package
Yes
Non-dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T A=25 °C
2.3
T A=70 °C
1.8
Unit
A
Pulsed drain current
I D,pulse
T A=25 °C
9.1
Avalanche energy, single pulse
E AS
I D=2.3 A, R GS=25 W
20
mJ
Reverse diode dv /dt
dv /dt
I D=2.3 A, V DS=48 V,
di /dt =100 A/µs,
T j,max=150 °C
6
kV/µs
Gate source voltage
V GS
Power dissipation 1)
P tot
Operating and storage temperature
T j, T stg
ESD Class
T A=25 °C
JESD22-A114 -HBM
Soldering Temperature
V
0.5
W
-55 ... 150
°C
class 0 (<250V)
260 °C
IEC climatic category; DIN IEC 68-1
1)
±20
55/150/56
Value refers to minimum footprint
Rev 2.3
page 1
2013-05-02
BSR606N
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
250
Thermal characteristics
SMD version, device on PCB
R thJA
minimal footprint2)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
60
-
-
Gate threshold voltage
V GS(th)
V DS=0 V, I D=15 µA
1.3
1.8
2.3
Drain-source leakage current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
-
1
V DS=60 V, V GS=0 V,
T j=150 °C
-
-
100
V
mA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=1.1 A
-
63
90
mW
V GS=10 V, I D=2.3 A
-
45
60
5.4
-
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=1.8 A
S
2)
Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mkm long; they are present on both
sides of the PCB.
Rev 2.3
page 2
2013-05-02
BSR606N
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
494
657
-
131
174
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
10.2
15.3
Turn-on delay time
t d(on)
-
5.6
-
Rise time
tr
-
2.6
-
Turn-off delay time
t d(off)
-
13
-
Fall time
tf
-
2.1
-
Gate to source charge
Q gs
-
1.6
2.1
Gate to drain charge
Q gd
-
1.0
1.4
Gate charge total
Qg
-
3.7
5.6
Gate plateau voltage
V plateau
-
3.0
-
V
-
-
0.9
A
-
-
12.8
-
0.83
1.15
V
-
22
-
ns
-
11
-
nC
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=3.2A, R G,ext=6 W
pF
ns
Gate Charge Characteristics
V DD=48 V, I D=3.2 A,
V GS=0 to 5 V
nC
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Rev 2.3
T A=25 °C
V GS=0 V, I F=2.3 A,
T j=25 °C
V R=30 V, I F=2.3 A,
di F/dt =100 A/µs
page 3
2013-05-02
BSR606N
2 Drain current
P tot=f(T A)
I D=f(T A); V GS≥10 V
0.6
2.4
0.5
2
0.4
1.6
ID [A]
Ptot [W]
1 Power dissipation
0.3
1.2
0.2
0.8
0.1
0.4
0
0
0
40
80
120
160
0
20
40
60
TA [°C]
80
100
120
140
160
101
102
103
TA [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T A=25 °C; D =0
Z thJA=f(t p)
parameter: t p
parameter: D =t p/T
102
103
1 µs
101
10 µs
100 µs
0.5
102
0.2
100
ZthJA [K/W]
ID [A]
1 ms
10 ms
10-1
0.1
0.05
101
0.02
0.01
DC
100
single pulse
10-2
10-3
10-1
10-1
100
101
102
VDS [V]
Rev 2.3
10-5
10-4
10-3
10-2
10-1
100
tp [s]
page 4
2013-05-02
BSR606N
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
10
150
10 V
9
3V
4.5 V
3.3 V
8
3.5 V
7
100
RDS(on) [mW]
6
ID [A]
3.5 V
5
4
3.3 V
4V
4.5 V
50
10 V
3
2
3V
1
2.8 V
0
0
0
2
4
6
8
0
2
4
VDS [V]
6
8
10
8
10
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
10
12
9
10
8
7
8
gfs [S]
ID [A]
6
5
6
4
4
3
150 °C
25 °C
2
2
1
0
0
0
1
2
3
4
5
VGS [V]
Rev 2.3
0
2
4
6
ID [A]
page 5
2013-05-02
BSR606N
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=2.3 A; V GS=10 V
V GS(th)=f(T j); V DS=VGS; I D=15 µA
parameter: I D
120
2.8
2.4
100
max
2
typ
VGS(th) [V]
RDS(on) [mW]
80
max
60
typ
1.6
min
1.2
40
0.8
20
0.4
0
0
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
I F=f(V SD)
parameter: T j
103
101
Ciss
100
25 °C
150 °C
IF [A]
C [pF]
Coss
102
150 °C, 98%
10-1
25 °C, 98%
10-2
Crss
101
10-3
0
10
20
30
VDS [V]
Rev 2.3
0
0.4
0.8
1.2
1.6
VSD [V]
page 6
2013-05-02
BSR606N
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=2.3 A pulsed
parameter: T j(start)
parameter: V DD
101
7
6
25 °C
5
30 V
100
12 V
48 V
VGS [V]
IAV [A]
100 °C
125 °C
4
3
10-1
2
1
10-2
0
100
101
102
0
103
1
2
3
4
5
Qgate [nC]
tAV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=250 µA
65
V GS
64
Qg
63
VBR(DSS) [V]
62
61
60
V gs(th)
59
58
57
Q g(th)
Q sw
56
Q gs
55
-60
-20
20
60
100
140
Q gate
Q gd
180
Tj [°C]
Rev 2.3
page 7
2013-05-02
BSR606N
PG-SC59
Package Outline:
Footprint:
Dimensions in mm
Rev 2.3
page 8
2013-05-02
BSR606N
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev 2.3
page 9
2013-05-02
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