877

SENSITRON
SEMICONDUCTOR
1C6626 thru 1C6631
TECHNICAL DATA
DATA SHEET 877, REV. B
SILICON ULTRA-FAST RECOVERY EPITAXIAL
RECTIFIER DIE
Applications:
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
Features:
•
•
•
•
Glass Passivated Epitaxial Diode with Mesa Structure
Soft Reverse Recovery at Low and High Temperature
Low Forward Voltage Drop and Low Reverse Current
Electrically and Mechanically Stable during and after Packaging
MAX. RATINGS / ELECTRICAL CHARACTERISTICS
Rating
All ratings are at TA = 25oC unless otherwise specified.
Symbol
Condition
Max
Units
WORKING PEAK REVERSE VOLTAGE
1C6626
1C6627
1C6628
1C6629
1C6630
1C6631
VRWM
AVERAGE RECTIFIED FORWARD CURRENT
1C6626 thru 1C6628
1C6629 thru 1C6631
Io
TA= 75 oC
2.3
1.8
PEAK FORWARD SURGE CURRENT
1C6626 thru 1C6630
1C6631
IFSM
Tp=8.3ms
75
60
A(pk)
MAXIMUM REVERSE CURRENT
1C6626 thru 1C6630
1C6631
IR @ VRWM
Tj = 25 oC
2.0
4.0
μAmps
IR @ VRWM
Tj = 150 oC
500
600
μAmps
IF=4A
IF=3A
IF=2A
1.50
1.70
1.95
IF=0.5A
IRM =1.0A
30
50
60
MAXIMUM REVERSE CURRENT
1C6626 thru 1C6630
1C6631
MAX. PEAK FORWARD VOLTAGE (PULSED)
1C6626 thru 1C6628
1C6629 to 1C6630
1C6631
MAXIMUM REVERSE RECOVERY TIME
1C6626 thru 1C6628
1C6629 to 1C6630
1C6631
VFM
Trr
200
400
600
800
900
1000
©2000 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
Phone (631) 586 7600 Fax (631) 242 9798 • www.sensitron.com • [email protected]
Volts
Amps
Volts
ns
SENSITRON
SEMICONDUCTOR
1C6626 thru 1C6631
TECHNICAL DATA
DATA SHEET 877, REV. B
Dimensions in inches (mm):
Bottom side metalization: Ti/Ni/Ag - 30 kÅ minimum.
Top side metalization: Al - 25 kÅ minimum
0.049 ± 0.003
(1.245 ± 0.076)
0.065 ± 0.003
(1.651 ± 0.076)
Bottom side is cathode, top side is anode.
0.009 ± 0.001 (0.229 ± 0.025)
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to
improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic
equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that
feature assured safety or by means of users’ fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause
during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for
any intellectual property claims or any other problems that may result from applications of information, products or circuits
described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage
resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written
permission of Sensitron Semiconductor.
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©2000 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
Phone (631) 586 7600 Fax (631) 242 9798 • www.sensitron.com • [email protected]
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