UM5080 Rev.01 Reliability Report FOR UM5080 Jul 01, 2012 UNION SEMICONDUCTOR, INC. Written by Fang JJ Product Engineer Approved by Ivan Product Manager Conclusion The UM5080 successfully meets the quality and reliability standards required of all Union products. In addition, Union’s continuous reliability monitoring program ensures that all outgoing product will continue to meet Union’s quality and reliability standards. Table of Contents I. ........Device Description II. ........Manufacturing Information III. ........Packaging Information IV. ........Die Information V. ....... Reliability Evaluation I. Device Description A. General The UM5080 ESD protection diode protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. The UM5080 is available in a DFN2 package with working voltages of 5 volt. It gives designer the flexibility to protect one unidirectional line in applications where arrays are not practical. Additionally, it may be “sprinkled” around the board in applications where board space is at a premium. It may be used to meet the ESD immunity requirements of IEC 61000-4-2, ±30kV air, ±30kV contact discharge. B. Absolute Maximum Ratings Peak Pulse Power (tp = 8/20us) (Ppk ) 140 Watts Lead Soldering Temperature (TL) 260°C (10 sec.) Operating Temperature (TA) -55 to +125 °C Storage Temperature ( TSTG) -55 to +150 °C Maximum Junction Temperature （TJMAX ) 150 °C II. Manufacturing Information A. Process: CMOS B. Wafer Type: UU011 C. Fabrication Location: Tai Wan D. Assembly Location: P.R.China III. Packaging Information A. Package Type: DFN1006H05-2L B. Lead Frame: EFTEC64T C. Lead Finish: NiPbAu D. Die Attach: NO-Conductive epoxy(WBC) E. Bond wire: Gold (0.8 mil dia.) F. Mold Material: G770HCD G. Flammability Rating: Class UL94-V0 H. Classification of Moisture Sensitivity per JEDEC standard JESD22-A113: Level 1 IV. Die Information A. Dimensions: 320 x 320 um2 B. Passivation: Si3N4/SiO2 (Silicon nitride/ Silicon dioxide) C. Interconnect: Al/Si/Cu D. Backside Metallization: Au E. Minimum Metal Width: Metal 3.0 um F. Minimum Metal Spacing: Metal 3.0 um G. Bond pad Dimensions: 170x170 um2 H. Isolation Dielectric: SiO2 I. Die Separation Method: Wafer Saw V. Reliability Evaluation A. Operating Life Test Test Item Failure Test Condition High Temp Package Identification Sample Number Size of Failure 77 0 Electrical Operating Life 125 ºC,168h JESD22-A108-B parameters DFN2 & functionality Test Circuit UM5080 B. Reliability evaluation test Test Item Test Condition Failure Identification TCT:-65-150ºC, 5Cycles; Electrical Precondition Bake:125ºC,24h; parameters JESD22-A113-D Soak:85ºC/85%RH,168h; & functionality Reflow:260±5ºC,3 Times & SAT Temp. Cycling -65-150ºC,Dewell=15Min, JESD22-A104-C 500 Cycles Unbiased Temp/Humidity JESD22-A118-B 130ºC/85%RH,2.3atm, 96h Temperature Humidity JESD22-A103-B Number Size of Failure DFN2 231 0 DFN2 77 0 DFN2 77 0 DFN2 77 0 DFN2 77 0 Electrical parameters & functionality Electrical parameters & functionality Electrical 85°C/85%RH,1000h JESD22-A101 High Temp Storage Sample Package parameters & functionality Electrical 150ºC,1000h parameters & functionality C. ESD The UM5080 die type has been found to have all pins able to withstand a transient pulse of 30KV (Air) and 30KV (Contact). Terminal A: Pin 1 connected to terminal A. Terminal B: Pin 2 connected to terminal B. A B