DS_TDA4862(G)

Datasheet, V2.0, 1 Dec 2003
PFC-DCM IC
TDA4862/TDA4862G
Power-Factor Controller (PFC)
IC for High Power Factor
and Active Harmonic Filter
Power Management & Supply
N e v e r
s t o p
t h i n k i n g .
TDA4862/TDA4862G
Revision History:
2003-12-01
Datasheet
Previous Version:
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Subjects (major changes since last revision)
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www.infineon.com
Edition 2003-12-01
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
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Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Power-Factor Controller (PFC)
IC for High Power Factor
and Active Harmonic Filter
TDA 4862
Advanced Information
Bipolar IC
Features
• IC for sinusoidal line-current consumption
• Power factor approaching 1
• Controls boost converter as an active
harmonics filter
• Internal start-up with low current consumption
• Zero current detector for discontinuous
operation mode
• High current totem pole gate driver
• Trimmed ± 1.4% internal reference
• Undervoltage lock-out with hysteresis
• Very low start-up current consumption
• Pin compatible to world standard
• Fast overvoltage regulator
• Current sense input with internal low pass filter
P-DIP-8-1
P-DSO-8-1
P-DSO-8-1
Type
Ordering Code
Package
▼ TDA 4862
Q67000-A8368
P-DIP-8-1
▼ TDA 4862 G
Q67006-A8369
P-DSO-8-1
▼ = New type
Version 2.0
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1 Dec 2003
TDA 4862
Description
The TDA 4862 is excellent convenient for designing a preconverter in ballasts and
switched mode power supplies with sinusoidal line current consumption and a power
factor approaching unity.
The TDA 4862 controls a boost converter as an active harmonics filter in a discontinuous
mode (free oscillating triangular shaped current mode).
The TDA 4862 comprises an internal start-up timer, a high gain voltage amplifier, an one
quadrant multiplier for approaching unity power factor, a zero current detector, PWM and
logic circuitry, and totem pole MOSFET gate driver.
Protective features are: input undervoltage lockout with hysteresis, VCC zener clamp,
cycle-by-cycle current limiting, output voltage limiting for fast and slow load changes up
to open circuit, and a sinking gate driver current activated whenever undervoltage mode
occurs.
The output voltage of this preconverter is regulated with high accuracy. Therefore the
device can be used for world-wide line voltages without switches.
The TDA 4862 is the improved version of the TDA 4817 with a pinout equivalent to world
standard.
TDA 4862 G
TDA 4862
V SENSE
1
8
V CC
V AOUT
2
7
GTDRV
MULTIN
3
6
GND
Ι SENSE
4
5
DETIN
IEP01748
V SENSE
1
8
V CC
V AOUT
2
7
GTDRV
MULTIN
3
6
GND
Ι SENSE
4
5
DETIN
IEP01749
Figure 1
Version 2.0
Pin Configuration (top view)
4
1 Dec 2003
TDA 4862
Pin Definitions and Functions
Pin Symbol Function
1
VSENSE
Voltage Amplifier Inverting Input;
VSENSE is connected via a resistive divider to the boost converter output.
With a capacitor connected to VAOUT it forms an integrator.
2
VAOUT
Voltage Amplifier Output;
VAOUT is connected internally to the first multiplier input. To prevent
overshoot the input voltage will be clamped at 5 V. During no load
conditions output pulses are suppressed completely whenVAOUT falls
below 2.2 V.
If the current flowing into this pin is exceeding an internal defined margin
the multiplier output voltage is reduced to prevent the MOSFET from
overvoltage damage.
3
MULTIN Multiplier Input;
MULTIN is the second multiplier input and connected via a resistive
divider to the rectifier output voltage.
4
ISENSE
Current Sense Minus;
ISENSE is connected to a sense resistor controlling the MOSFET source
current. The input is internally clamped at – 0.3 V to prevent negative
input voltage interaction. An internal low pass filter suppresses voltage
spikes when turning the MOSFET on.
5
DETIN
Zero Current Detector Input;
DETIN is connected to an auxiliary winding monitoring the zero crossing
of the inductor current.
6
GND
Ground;
All voltages are measured with respect to GND. VCC should be
bypassed directly to GND with a 0.1 µF or larger ceramic capacitor.
7
GTDRV
Gate Drive Output;
GTDRV is the output of a totem-pole circuitry for direct driving a
MOSFET. A clamping network bypasses low state source current and
high state sink current.
8
VCC
Positive Supply Voltage;
VCC should be connected to a stable source slightly above the VCC
turn-ON threshold for normal operation. A 100 nF or lager ceramic
capacitor connected to VCC absorbs supply current spikes required to
charge external MOSFET gate capacitances.
Version 2.0
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1 Dec 2003
TDA 4862
Functional Description
Introduction
Conventional electronic ballasts and switching power supplies are designed with a
bridge rectifier and bulk capacitor. Their disadvantage is that the circuit draws power
from the line when the instantaneous AC voltage exceeds the capacitor’s voltage. This
occurs near the line voltage peak and causes a high charge current spike with following
characteristics: the apparent power is higher than the real power that means low power
factor condition, the current spikes are non-sinusoidal with a high content of harmonics
causing line noise, the rectified voltage depends on load condition and requires a large
bulk capacitor, special efforts in noise suppression are necessary.
With the TDA 4862 preconverter a sinusoidal current is achieved which varies in direct
instantaneous proportion to the input voltage half sine wave and means a power factor
near 1. This is due to the appearance of almost any complex load like a resistive one at
the AC line. The harmonic distortions are reduced and comply with the IEC555 standard.
Operating Description
The TDA 4862 contains a wide bandwidth voltage amplifier used in a feedback loop, an
overvoltage regulator, an one quadrant multiplier with a wide linear operating range, a
current sense comparator, zero current detector, a PWM and logic circuitry, a totem-pole
MOSFET driver, an internal trimmed voltage reference, a restart timer and an
undervoltage lockout circuitry. These functional blocks are described below.
Voltage Amplifier
The voltage amplifier is internally compensated and yields a gain bandwidth of 0.8 MHz
and a phase margin of 80 degrees. The non-inverting input is biased at 2.5 V and is not
pinned out. The inverting input is sensing the output voltage via a resitive devider. The
voltage amplifier output VAOUT and the inverting input VSENSE are connected in a simplest
way via an external capacitor. It forms an integrator which monitors the average output
voltage over several line cycles. Typically the bandwidth is set below 20 Hz. ln order to
keep the output voltage constant the voltage amplifier output is connected to the
multiplier input for regulation.
Overvoltage Regulator
Fast changes of the output voltage can’t be regulated by the integrator formed with the
voltage amplifier This occurs during initial start-up, sudden load removal, or output arcing
and leads to a current peak at the voltage amplifier input while the voltage amplifier’s
differential input voltages remains zero. The peak current is flowing through the external
capacitor into VAOUT. Exceeding an internal defined margin causes a regulation circuitry
to reduce the multiplier output voltage.
Version 2.0
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1 Dec 2003
TDA 4862
Functional Description (cont’d)
MuItiplier
A one quadrant multiplier is the crucial circuitry that regulates the gate driver with respect
of the DC output voltage and the AC haversine input voltage of the preregulator. Both
inputs are designed for good linearity over a wide dynamic range, 0 V to 4.0 V for the
MULTIN and 2.5 V to 4.0 V for the VAOUT.
Current Sense Comparator and RS Latch
The multiplier output voltage is compared with the current sense voltage which
represents the current through the MOSFET. The current sense comparator in addition
with the logic ensures that only a single pulse appears at the drive output during a
given cycle. The multiplier output and the current sense threshold are internally clamped
at 1.3 V. So the gate drive MOSFET is protected against critical operating, as they occur
during start up. To prevent the input from negative pulses a special protection circuitry is
implemented. Switch-on current peaks are reduced by an internal RC-Filter.
Zero Current Detector
The zero current detector senses the inductor current via an auxiliary winding and
ensures that the next on-time is initiated immediately when the inductor current has
reached zero. This diminishes the reverse recovery losses of the boost converter diode.
Output switch conduction is terminated when the voltage drop of the shunt resistor
reaches the threshold level of the multiplier output. So the boost current waveform has
a triangular shape and there are no deadtime gaps between the cycles. This leads to a
continuous AC line current limiting the peak current to twice of the average current.
To prevent false tripping the zero current detector is designed as a Schmitt trigger with
a hysteresis of 0.6 V. An internal 5 V clamp protects the input from overvoltage
breakdown, a 0.6 V clamp prevents substrate injection. An external resistor must be
used in series with the auxiliary winding to limit the current through the clamps.
Timer
A restart timer function was added to the IC to eliminate the need for an oscillator when
used in stand-alone applications. The timer starts or restarts the TDA 4862 if the drive
output has been off for more than 15 µs after the inductor current reaches zero.
Version 2.0
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1 Dec 2003
TDA 4862
Functional Description (cont’d)
Undervoltage Lockout
An undervoltage lockout circuitry enables the output stage when VCC reaches the upper
threshold VCC and terminates the output stage when VCC is falling below the lower
threshold VCCL. In the standby mode the supply current is typically 75 µA. An internal
clamp has been added from VCC to ground to protect the IC from an overvoltage
condition. The external circuitry is created with a start-up resistor connected from VCC to
the input supply voltage and a storage capacitor from VCC to ground. Bootstrap power
supply is created with the previous mentioned auxiliary winding and a diode.
Output
The TDA 4862 totem pole output stage is MOSFET compatible. An internal protection
circuitry is activated when VCC is within the stand by mode and ensures that the MOSFET
is turned-OFF. The totem pole output has been optimized to minimize cross conduction
current during high speed operation. The addition of two 4 Ω resistors, one in series with
the source output transistor and one in series with the sink output transistor, reduces the
cross conduction current.
Version 2.0
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1 Dec 2003
Figure 2
Version 2.0
9
DETIN
Ι SENSE
MULTIN
V AOUT
V SENSE
5
4
3
2
1
V
REF
Clamp
Filter
Clamp
+
Voltage
Amplifier
0.6 V
30 k Ω
0.9 V
2.5 V / 1.9 V
5V
4V
Detector
10 pF
Multiplier
OverVoltage
Regulation
1.3 V
Clamp
+
Current
Comp
TDA 4862; G
11 V / 8.5 V
V CC
Undervoltage
Lockout
V CCZ-Clamp
Driver
and
Logic
Reference
Voltage
IEB01747
6
7
8
GND
GTDRV
V CC
TDA 4862
Block Diagram
1 Dec 2003
AC
90-270 V
V IN
RF-Filter
and
Rectifier
Figure 3
Version 2.0
R2
12 k Ω
C4
100 nF
R1
1.3 M Ω
R3
100 k Ω
10
GND
6
MULTIN 3
C3
100 µF
C1
0.22 µF
8
V AOUT
2
+
Voltage
OP
Multipler
+
PWM
Logic
Driver
C6
470 nF
TDA 4862 G
Current
OP
+
Detector
DETIN
5
R3
22 k Ω
V Ref
V TH
D1
R8
1N4148
100 Ω
250 µH
Tr1
1 V SENSE
4 Ι SENSE
7 GTDRV
D2
Q1
BYP 101
R7
0.1 Ω
BUZ 334
C5
470 µF
IES01750
R6
10 k Ω
R5
1.6 M Ω
400 V
V OUT
TDA 4862
Application Circuit with TDA 4862; G
1 Dec 2003
TDA 4862
Absolute Maximum Ratings
Parameter
Supply voltage at
supply + Z-current
Symbol Limit Values Unit
VCC
Pin 8 VCC
VCC-GND Pin 8 ICCZ
Current into
GTDRV
Clamping current into GTDRV
Clamping current into GTDRV
max.
– 0.3
0
–
70
– 400 500
100
–
– 100 –
V
mA
–
observe Pmax
mA
mA
mA
observe Pmax
VGTDRV > VCC
VGTDRV < – 0.3 V
–
–
–
–
– 0.3
– 0.3
– 0.3
– 10
–
– 10
17
6
17
17
50
–
V
V
V
V
mA
mA
VDETIN > 6 V
VDETIN < 0.9 V
– 40
150
°C
–
Storage temperature
VVSENSE
VVAOUT
VMULTIN
VISENSE
IDETINH
IDETINL
Tj
Tstg
– 50
150
°C
–
Thermal resistance system-air
TDA 4862
TDA 4862 G
RthSA
RthSA
–
–
100
180
K/W
K/W
P-DIP-8-1
P-DSO-8-1
Voltage at
Voltage at
Voltage at
Voltage at
Current into
Current into
VSENSE
VAOUT
Pin 7 IGTDRV
Pin 7 IGTDCH
Pin 7 IGTDCL
min.
Notes
Pin 1
Pin 2
MULTIN Pin 3
ISENSE
Pin 4
DETIN
Pin 5
DETIN
Pin 5
Junction temperature
Operating Range
Parameter
Symbol Limit Values Unit
min.
Supply voltage
Z-current
Junction temperature
Voltage at ISENSE
1)
VCC
IZ
Tj
VISENSE
Notes
max.
VCCON VZ
V
1)
0
50
mA
observe Pmax
– 40
150
°C
–
–5
VZ
V
–
VCCON means VCCH has been exceeded but the supply voltage is still above VCCL. The device has switched from
standby to active. For VCCH and VCCL values see Electrical Characteristics. If 0 V < VCC < VCCON, the device
is in standby and output GTDRV is active low.
Version 2.0
11
1 Dec 2003
TDA 4862
Electrical Characteristics
Unless otherwise stated, VCC = 12 V, – 40 °C < Tj < 150 °C.
Parameter
Symbol
Limit Values
Unit Test Condition
min.
typ.
max.
ICCL
Supply current, ON
ICCH
Supply current, dynamic ICCDY
–
75
200
µA
0 V < VCC < VCCH
–
4
6
mA
Output low
–
4.2
8
mA
fDETIN = 50 kHz,
CGTDRV = 1 nF
VCC turn-ON threshold
VCC turn-OFF threshold
VCC turn-ON/OFF
VCCH
VCCL
VCCHY
–
11
11.5
V
–
8.0
8.5
–
V
–
1.8
2.3
3.0
V
–
VZ
15
17
19
V
ICCZ = 50 mA
Voltage feedback
threshold
VFB
2.465
2.5
2.53
5
V
Tj = 25 °C,
Pin 1 to Pin 2
Voltage feedback
threshold
VFB
2.45
–
2.55
V
Pin 1 to Pin 2
Line regulation
∆VFBL
–
–
5
mV
VCC = 10 V to 15 V
Input bias current
–1
–
–
µA
–
–
80
–
dB
–
Unity gain bandwidth1)
IBVSENSE
GV
BW
–
0.8
–
MHz –
Phase margin1)
ΦM
–
80
–
Degr –
Inhibit threshold voltage VVAOUTI
–
2.2
–
V
–
Output current source
IVAOUTH
–
– 12
–
mA
Output current sink
IVAOUTL
–
4
–
mA
VVAOUT = 0 V,
VVSENSE = 2.3 V
VVAOUT = 4 V,
VVSENSE = 2.8 V
Overall
Supply current, OFF
hysteresis
VCC clamp
Voltage Amplifier
Open loop voltage gain1)
1not
subject to production test - verified by characterization.
Version 2.0
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1 Dec 2003
TDA 4862
Electrical Characteristics (cont’d)
Unless otherwise stated, VCC = 12 V, – 40 °C < Tj < 150 °C.
Parameter
Symbol
Limit Values
Unit Test Condition
min.
typ.
max.
Output voltage swing
high state
VVAOUTH
3.8
4.3
5.0
V
Output voltage swing
low state
VVAOUTL
–
0.9
–
V
IRVAOUT
20
30
45
µA
IVAOUT = – 0.2 mA
VVSENSE = 2.3 V
IVAOUT = 0.5 A
VVSENSE = 2.8 V
Overvoltage Regulator
Regulation current
VVAOUT = VMULTIN
= 4 V,
VISENSE = 0.5 V
Current Comparator
Input bias current
Input offset voltage
Max threshold voltage
Delay to output1)
IBISENSE – 1
VISENSEO –
VISENSEM 1.05
tPHL
–
–
–
µA
–
25
–
mV
VMULTIN = 0 V,
VVAOUT = 2.4 V
1.25
1.5
V
–
250
–
ns
–
)
Detector
Upper threshold voltage VDETINU
(VDETIN increasing)
–
2.5
2.75
V
–
Lower threshold voltage VDETINL
(VDETIN decreasing)
1.5
1.9
–
V
–
0.6
–
V
–
Input current
VDETINHY –
IBDETIN
–1
–
–
µA
1.5 V < VDETIN
< 2.75 V
Input clamp voltage
High state
Low state
VDETINHC 4
VDETINLC –
5
0.6
–
1
V
V
IDETIN = 5 mA
IDETIN = – 5 mA
Hysteresis
1)not
subject to production test - verified by characterization
Version 2.0
13
1 Dec 2003
TDA 4862
Electrical Characteristics (cont’d)
Unless otherwise stated, VCC = 12 V, – 40 °C < Tj < 150 °C.
Parameter
Symbol
Limit Values
Unit Test Condition
min.
typ.
max.
IBMULTIN
–1
–
–
VAOUT
VMULTIN
VVAOUT
Multiplier gain 1)
Multiplier
µA
–
–
0 to 3 0 to 4
–
VFB to VFB to
VFB + 1 VFB + 1.5
V
V
VVAOUT = 2.75 V
VMULTIN = 1.0 V
K
0.45
0.65
0.85
1/V
VMULTIN = 2 V
VVAOUT = VFB + 1 V
tDLY
75
190
400
µs
–
Output voltage low state VGTDRVL
–
0.8
1.8
–
V
V
Output voltage high
state
VGTDRVH
–
9.4
8.7
–
V
Output voltage active
shut down
VGTDRVU
–
2.0
2.6
V
Rise time 2)
tr
tf
–
100
–
–
–
40
–
–
IGTDRV = 20 mA
IGTDRV = 200 mA
IGTDRV = – 20 mA
IGTDRV = – 200 mA
IGTDRV = 50 mA
VCC increasing:
0 < VCC < VCCH,
VCC decreasing:
0 < VCC < VCCL
CGTDRV = 1 nF
CGTDRV = 1 nF
Input bias current
Dynamic voltage range
MULTIN
Restart Timer
Restart time delay
Gate Driver
Fall time
2)
1)
K = VISENSE / (VMULTIN × (VVAOUT – VFB))
2)
not subject to production test - verified by design
Version 2.0
14
1 Dec 2003
TDA 4862
Supply Current ICC versus
Supply Voltage VCC
IED01751
6
Ι CC
Supply Current ICC versus
Junction Temperature Tj
mA
Ι CC
5
4
4
3
2
=3V
=3V
=1V
= 0.5 V
=2V
= 25 C
=3V
=3V
=1V
= 0.5 V
=2V
2
1
0
-50
0
0
V VSENSE
V VAOUT
V MULTIN
V ISENSE
V DETIN
3
1
5
10
15 V
V CC
20
Turn-ON/-OFF Threshold Voltage VCC
versus Junction Temperature Tj
11
50
100 C 150
Tj
IED01754
100
V
V CCH
0
Open Loop Gain GV and Phase Φ
versus Frequency f
IED01753
12
V CC
mA
5
V VSENSE
V VAOUT
V MULTIN
V ISENSE
V DETIN
Tj
IED01752
6
GV
0
dB
V CC = 12 V
3.0 < V VAOUT < 3.5 V
deg
80
T j = 25 C
30
Φ
A0
10
60
9
40
60
Φ
V CCL
20
8
7
-50
Version 2.0
0
50
0
10 -2 10 -1 10 0 10 1 10 2
100 C 150
Tj
15
90
ΦM
120
150
kHz 10
f
4
1 Dec 2003
TDA 4862
Threshold Voltage Change ∆VFB versus
Junction Temperature Tj
∆V FB
Threshold Voltage VISENSE versus
Regulation Current IRVAOUT
IED01755
10
mV
IED01756
1.4
V CC =12 V
V ISENSE
V CC = 12 V
Pin 1 connected to Pin 2
V
5
1.0
0
-40 C
0.8
25 C
0.6
-5
150 C
0.4
-10
0.2
-15
-50
0
50
0
29
100 C 150
Tj
Threshold Voltage VDETIN versus
Junction Temperature Tj
30
31
32
33 µ A 34
Ι RVAOUT
Current Sense Threshold VISENSE versus
Multiplier Input VMULTIN
IED01757
3.00
IED01758
1.4
4.0 V
V ISENSE
1/V
V DETIN
V CC
= 12 V
V MULTIN = 1 V
V VSENSE = GND
V ISENSE = GND
2.75
V
3.5 V
1.0
2.50
3.0 V
V DETINupper
0.8
2.25
0.6
2.75 V
2.00
0.4
V DETINlow
1.75
0.2
V VAOUT = 2.5 V
0
-50
Version 2.0
0
50
0
100 C 150
Tj
0
1
2
3
4
V 5
V MULTIN
16
1 Dec 2003
TDA 4862
Current Sense Threshold VISENSE versus
Voltage Amplifier Output VVAOUT
Multiplier Gain K versus
Junction Temperature Tj
IED01759
1.4
V MULTIN = 3 V
V ISENSE
IED01760
1.2
K
V
2V
= 12 V
=2V
= VFB + 1 V
V CC
V MULTIN
V VAOUT
1/V
0.9
1.0
1V
0.8
0.6
0.6
0.5 V
0.4
0.3
0.2
0
2.5
3.0
4.0
3.5
0
-50
4.5 V 5.0
V VAOUT
Restart Time Delay tDLY versus
Junction Temperature Tj
t DLY
50
100 C 150
Tj
Output Voltage Low/High State VSAT
versus Load Current IGTDRV
IED01761
240
µs
0
IED01762
6
V SAT
VCC = 12 V
V
T = 10 ms
t p = 200 µ s
5
220
VCC VGTDRVH
4 VGTDRVL at VCC = 7 V
200
3
180
2
VGTDRVL
160
140
-50
Version 2.0
1
0
0
50
100 C 150
Tj
0
100
200
300 mA 400
Ι GTDRV
17
1 Dec 2003
TDA 4862
Package Outlines
GPD05025
Plastic Package, P-DIP-8-1
(Plastic Dual In-line Package)
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”.
Dimensions in mm
Version 2.0
18
1 Dec 2003
TDA 4862
GPS05121
Plastic Package, P-DSO-8-1
(Plastic Dual Small Outline Package)
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”.
SMD = Surface Mounted Device
Version 2.0
19
Dimensions in mm
1 Dec 2003
Total Quality Management
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Bedeutung. Wir wollen allen Ihren
Ansprüchen in der bestmöglichen
Weise gerecht werden. Es geht uns also
nicht nur um die Produktqualität –
unsere Anstrengungen gelten
gleichermaßen der Lieferqualität und
Logistik, dem Service und Support
sowie allen sonstigen Beratungs- und
Betreuungsleistungen.
Quality takes on an allencompassing
significance at Semiconductor Group.
For us it means living up to each and
every one of your demands in the best
possible way. So we are not only
concerned with product quality. We
direct our efforts equally at quality of
supply and logistics, service and
support, as well as all the other ways in
which we advise and attend to you.
Dazu gehört eine bestimmte
Geisteshaltung unserer Mitarbeiter.
Total Quality im Denken und Handeln
gegenüber Kollegen, Lieferanten und
Ihnen, unserem Kunden. Unsere
Leitlinie ist jede Aufgabe mit „Null
Fehlern“ zu lösen – in offener
Sichtweise auch über den eigenen
Arbeitsplatz hinaus – und uns ständig
zu verbessern.
Part of this is the very special attitude of
our staff. Total Quality in thought and
deed, towards co-workers, suppliers
and you, our customer. Our guideline is
“do everything with zero defects”, in an
open manner that is demonstrated
beyond your immediate workplace, and
to constantly improve.
Unternehmensweit orientieren wir uns
dabei auch an „top“ (Time Optimized
Processes), um Ihnen durch größere
Schnelligkeit den entscheidenden
Wettbewerbsvorsprung zu verschaffen.
Geben Sie uns die Chance, hohe
Leistung durch umfassende Qualität zu
beweisen.
Wir werden Sie überzeugen.
http://www.infineon.com
Published by Infineon Technologies AG
Throughout the corporation we also
think in terms of Time Optimized
Processes (top), greater speed on our
part to give you that decisive
competitive edge.
Give us the chance to prove the best of
performance through the best of quality
– you will be convinced.
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