634

SENSITRON
SEMICONDUCTOR
SD120UF200X30
TECHNICAL DATA
DATA SHEET 634, REV A
SILICON RECTIFIER DIE
ULTRAFAST RECOVERY
Electrical Characteristics
Parameter
Peak Inverse Voltage
Symbol
VRWM
Min.
200
Max.
-
Unit
Volts
Max. Average DC Output
Current
IO
-
15
Amps
Max. Forward Voltage Drop
@ 15A pulse
TA =
25C
Reverse Current @ VRWM
TA = 25C
TA = 125C
Max. Reverse Recovery Time
VF
-
0.975
Volts
IR
Amps
mA
ns
C
Operating and Storage Temp.
trr
-
5
1.0
30
TOP & TSTG
-55
+150
Rectifier Die Outline
B
A
Bottom side metalization Ag - 30 kA
minimum.
Top side metalization Al = 25 kA or Ti.=
1.2kA, Ni = 1.8kA, Ag = 30kA.
C
Die Type
ULTRAFAST
RECOVERY
Nominal Size
(Inch)
.120
Bottom side is cathode, top side is
anode.
A
Inch (mm)
+/- .003 (.077)
.120 (3.05)
B
Inch (mm)
+/- .003 (.077)
.094 (2.38)
C
Inch (mm)
+/- .001 (.026)
.010 (0.254)
©2014 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729-4681 
 Phone (631) 586-7600  Fax (631) 242-9798  www.sensitron.com  [email protected] 
SENSITRON
SEMICONDUCTOR
SD120UF200X30
TECHNICAL DATA
DATA SHEET 634, REV A
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve
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©2014 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729-4681 
 Phone (631) 586-7600  Fax (631) 242-9798  www.sensitron.com  [email protected]
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