Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
KMI18/2
Integrated rotational speed sensor
Preliminary specification
2000 Sep 05
Philips Semiconductors
Preliminary specification
Integrated rotational speed sensor
KMI18/2
FEATURES
PINNING
• Open collector output
PIN
SYMBOL
DESCRIPTION
• For active target wheel application
1
VCC
DC supply voltage
• Wide air gap
2
OUT
open collector output
• Zero speed capability
3
GND
ground
• Wide temperature range
• Insensitive to vibration.
handbook, halfpage
DESCRIPTION
The KMI18/2 sensor detects rotational speed of active
target wheels with magnetic reference marks.
B1
B2
B3
B4
It consists of a magnetoresistive sensor element, an
integrated circuit for signal conditioning and a ferrite
magnet.
The frequency of the digital voltage output signal is
proportional to the rotational speed of the target wheel.
An open collector output gives high flexibility in the design
of the subsequent signal conditioning electronics.
CAUTION
Do not press two or more products together against their
magnetic forces. Do not expose products to strong
magnetic fields of more than 30 kA/m.
1
2
3
MBL224
Fig.1 Simplified outline (SOT477A).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCC
DC supply voltage
Tamb = −40 to +150 °C
4.5
5
16.5
V
ICC
DC supply current
VCC = 5 V
6
7
10
mA
HyLH
magnetic threshold for LH edge
100
250
400
A/m
HyHL
magnetic threshold for HL edge
Tamb
ambient operating temperature
VCC = 5 V; note 1
Note
1. Maximum power consumption according to power derating curve, see Fig.3.
2000 Sep 05
2
−400
−250
−100
A/m
−40
−
+150
°C
Philips Semiconductors
Preliminary specification
Integrated rotational speed sensor
KMI18/2
LIMITING VALUES
In accordance with Absolute Maximum Rating System (IEC 60134); Tamb = −40 to +150 °C; see Fig.4.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
DC supply voltage
not protected against incorrect polarity
−0.5
+16.5
V
VOUT
output voltage
not protected against incorrect polarity
−0.5
+24
V
IOUT(max)
maximum output current
low state; note 1
−
20
mA
IOUT(high)
output leakage current
high state; note 2; see Fig.5
−
100
µA
high state; note 2; see Fig.6
−
100
µA
Ptot
total power dissipation
VCC = 16.5 V; IOUT = 20 mA
−
300
mW
VCC = 5 V
−40
+150
°C
−40
+150
°C
−
260
°C
Tamb
ambient operating temperature
Tstg
storage temperature
Tsld
soldering temperature
t ≤ 10 s
Notes
1. Low: transistor open (VCE < 1 V).
2. High: transistor closed (VCE > 4 V).
CHARACTERISTICS
Tamb = 26 ± 10 °C; VCC = 5 V; frm = 0 to 25000 Hz; magnetic reading point according to ‘Package outline’; unless
otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Sensor characteristics
magnetic trigger field strength
(threshold) for LH-output edge
Tamb = 25 °C
100
250
400
A/m
Tamb = −40 to +150 °C
−200
+250
+600
A/m
HyHL
magnetic trigger field strength
(threshold) for HL-output edge
Tamb = 25 °C
−400
−250
−100
A/m
Tamb = −40 to +150 °C
−600
−250
+200
A/m
Hy0
magnetic offset
−150
−
+150
A/m
Hyh
magnetic trigger hysteresis
100
500
700
A/m
Hx
auxiliary magnetic field strength
5
8
10
kA/m
frm
frequency of magnetic reference
marks
0
−
25000
Hz
Tamb = 26 ± 10 °C;
VCC = 5 V
6.5
7.5
8.5
mA
Tamb = −40 to +150 °C;
VCC = 5 V
6
7
10
mA
Tamb = −40 to +150 °C
4.5
5
16.5
V
change of magnetic
reference field Hy
NS → HL
SN → LH
20
mA
HyLH
Supply conditions
ICC
VCC
DC supply current
DC supply voltage
Signal output characteristics
transfer behaviour
power-on state
IOUT
output current
2000 Sep 05
undefined
low state; note 1
3
0.1
−
Philips Semiconductors
Preliminary specification
Integrated rotational speed sensor
SYMBOL
PARAMETER
KMI18/2
CONDITIONS
MIN.
TYP.
MAX.
UNIT
−
−
100
µA
IOUT = 1 mA
0.01
0.03
0.1
V
IOUT = 10 mA
0.1
0.2
0.5
V
IOUT = 20 mA
IOUT(high)
output leakage current
high state; note 2;
see Fig.6
VOUT
output saturation voltage
Tamb = −40 to +150 °C;
low state; note 1
0.3
0.5
1
V
tr(OUT)
output signal rise time
low 10% to high 90%;
see Fig.7
5
12
20
µs
tf(OUT)
output signal fall time
high 90% to low 10%;
see Fig.7
0.05
0.5
1
µs
tdf(OUT)
output signal delay time of HL-edge
1.5
2.5
3.5
µs
dtdf(OUT)
jitter
measured in harmonic
magnetic field in y with
Hy(max) = 1 kA/m;
normalized to cycle of
one reference mark
0
−
0.15
%
external magnetic influence
note 3
−
−
30
kA/m
ESD protection of sensor pins VCC,
OUT and GND
compliance to
IEC 0801-2 (IV); note 4
2
−
−
kV
ESD protection of internal
pins B1, B2, B3 and B4
compliance to
IEC 0801-2 (IV); note 5
0.3
−
−
kV
EMC: compliance to ISO 11452-5
A; stripline; 300 V/m;
10 kHz to 400 MHz;
1500 mm
interference for pulse: ISO 7637;
pulse 4
T = 25 °C; harmonic
magnetic field in y with
Hy(max) = 1 kA/m and
fm = 50 Hz
48
pF
Environmental conditions
function A
Capacity of sensor shield
CS
shield capacity
B1 vs. B2 of MR bridge;
37
f = 1 MHz; Uosc = 200 mV
43
Notes
1. Low: transistor open (VCE < 1 V).
2. High: transistor closed (VCE > 4 V).
3. Higher magnetic fields could cause irreversible shifts of parameters.
4. Output pins are designed for electrostatic sensitivity with field strengths up to 2 kV according to Human Body
Model (HBM), MIL-STD-883, Method 3015.
5. MR pins are designed for electrostatic sensitivity with field strengths up to 0.3 V according to Human Body
Model (HBM), MIL-STD-883, Method 3015.
2000 Sep 05
4
Philips Semiconductors
Preliminary specification
Integrated rotational speed sensor
KMI18/2
FUNCTIONAL DESCRIPTION
The KMI18/2 is sensitive to the rotation of an active target
wheel with magnetic reference marks. The functional
principle is shown in Fig.8. Because of the sensor layout
and setup of the measuring system, only movements of
reference marks in the y-direction will be sensed
(coordinate system see Fig.2).
x
handbook, halfpage
x
magnet with
direction of
magnetization
y
The electrical output signal of the sensor is amplified,
temperature compensated and applied to a Schmitt trigger
in the signal conditioning circuit (see Fig.9). An additional
housing separates the conditioning circuitry from the
magnetorestive sensor element, thereby ensuring optimal
sensor performance at high temperatures.
z
sensor
The signal level of the digital output is independent from
the sensing distance within the measuring range. Its
frequency equals that of the reference marks on the target
wheels(1).
IC
An open collector voltage interface ensures accurate
transmission (three wires) of the digital sensor signal to the
subsequent signal conditioning electronics.
1
2
3
MBL227
Fig.2 Component detail and coordinate system.
(1) See relevant application notes for specific target wheel data.
2000 Sep 05
5
Philips Semiconductors
Preliminary specification
Integrated rotational speed sensor
KMI18/2
MBL226
400
handbook, halfpage
Ptot
(mW)
300
VCC
handbook, halfpage
ICC
200
SENSOR
VOUT
I OUT
100
MBL218
0
0
50
100
150
200
Tamb (°C)
Fig.3 Power derating curve.
Fig.4 Supply and output.
VCC
handbook, halfpage
VCC
handbook, halfpage
I OUT
I OUT
SENSOR
SENSOR
VOUT
VOUT
24 V V
V
MBL220
MBL219
Fig.5 Leakage current test circuit: VCC to OUT.
2000 Sep 05
V 5V
VCC
Fig.6 Leakage current test circuit: OUT to GND.
6
Philips Semiconductors
Preliminary specification
Integrated rotational speed sensor
KMI18/2
VCC
handbook, halfpage
I CC
2.7 kΩ
10 kΩ
SENSOR
VOUT
2 nF
MBL225
Fig.7
Test and application circuit with
additional ceramic capacitor.
moving direction of the sensor
handbook, full pagewidth
y
z
magnetized
target
N
S S
N N
S S
N N
S
output
signal
MBL236
Fig.8 Functional principle.
2000 Sep 05
7
Philips Semiconductors
Preliminary specification
Integrated rotational speed sensor
KMI18/2
handbook, full pagewidth
VCC
VOLTAGE CONTROL
SENSOR
AMPLIFIER
SCHMITT
TRIGGER
OUT
open collector
output
GND
MGT539
Fig.9 Block diagram.
2000 Sep 05
8
Philips Semiconductors
Preliminary specification
Integrated rotational speed sensor
KMI18/2
PACKAGE OUTLINE
Plastic single-ended multi-chip package;
magnetized ferrite magnet (3.8 x 2 x 0.8 mm); 4 interconnections; 3 in-line leads
HE1
SOT477A
A
B
E
Q
A
L1
M2
bp1
D
v M A B
L
E1
HE
SENSOR DIE POSITION
centre of reading point
D1
*
L2
1
2
e1
3
bp
c
e
M1
v M A B
M3
K
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A(1)
bp
bp1
c
D(2)
D1(2)
E(2)
E1(2)
e
1.7
1.4
0.8
0.7
1.57
1.47
0.3
0.24
4.1
3.9
5.7
5.5
4.5
4.3
5.7
5.5
4.6
4.4
mm
e1
HE
2.35 18.2
2.15 17.8
K
HE1
max.
5.6
5.5
1.67
L
L1
L2
M1
M2
7.55
7.25
1.2
0.9
3.9
3.5
3.9
3.7
2.1
1.9
M3(1)
Q
v
0.9 0.75
0.25
0.75 0.65
Notes
1. Glue thickness not included.
2. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
00-08-31
SOT477A
2000 Sep 05
EUROPEAN
PROJECTION
9
Philips Semiconductors
Preliminary specification
Integrated rotational speed sensor
KMI18/2
DATA SHEET STATUS
DATA SHEET STATUS
PRODUCT
STATUS
DEFINITIONS (1)
Objective specification
Development
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 Sep 05
10
Philips Semiconductors
Preliminary specification
Integrated rotational speed sensor
KMI18/2
NOTES
2000 Sep 05
11
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SCA 70
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Date of release: 2000
Sep 05
Document order number:
9397 750 07254
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