229

SENSITRON
SEMICONDUCTOR
SHD225508
TECHNICAL DATA
DATA SHEET 229, REV. A
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
œ 1000 Volt, 2.0 Ohm, 6.0A MOSFET
œ Isolated Hermetic Metal Package
œ Fast Switching
œ Low RDS (on)
MAXIMUM RATINGS
ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.
RATING
GATE TO SOURCE VOLTAGE
ON-STATE DRAIN CURRENT
PULSED DRAIN CURRENT
OPERATING AND STORAGE TEMPERATURE
TOTAL DEVICE DISSIPATION
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 3.0 mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 3.0A
GATE THRESHOLD VOLTAGE
VDS = VGS, ID = 2.5mA
FORWARD TRANSCONDUCTANCE
VDS = 10V, ID = 3.0A
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 0.8 x Max. rating, VGS = 0V, TJ = 25•C
TJ = 125•C
GATE TO SOURCE LEAKAGE FORWARD
VGS = 20V
GATE TO SOURCE LEAKAGE REVERSE
VGS = -20V
TURN ON DELAY TIME
VDD = 500V,
RISE TIME
ID = 3.0A
TURN OFF DELAY TIME
VGS=10V
FALL TIME
RG = 4.7W
DIODE FORWARD VOLTAGE
IS = 6.0A, VGS = 0V
Pulse test, t ˆ 300 ms, duty cycle d ˆ 2 %
REVERSE RECOVERY TIME
TJ = 25•C,
IF=6.0A, VDD = 100V
di/dt = 100A/msec
INPUT CAPACITANCE
VGS = 0 V
OUTPUT CAPACITANCE
VDS = 25 V
REVERSE TRANSFER CAPACITANCE
f = 1.0MHz
THERMAL RESISTANCE, JUNCTION TO CASE
SYMBOL
VGS
ID
IDM
TJ/TSTG
PD
MIN.
-55
-
TYP.
-
MAX.
–20
6.0
24
+150
150
UNITS
Volts
Amps
Amps
•C
Watts
SYMBOL
BVDSS
MIN.
1000
TYP.
-
MAX.
-
UNITS
Volts
RDS(ON)
VGS(th)
gfs
-
-
2.0
2.0
4.0
6.0
4.5
IDSS
-
-
IGSS
-
-
td(ON)
tr
td(OFF)
tf
-
35
40
100
60
250
1000
100
-100
VSD
-
-
1.5
Volts
trr
-
-
250
nsec
Ciss
Coss
Crss
RthJC
-
2600
180
45
-
-
-
-
W
Volts
S(1/W)
mA
nA
nsec
0.83
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - www.sensitron.com E-Mail Address - [email protected]
pF
•C/W
SHD225508
SENSITRON
DATA SHEET 229 REV. A
MECHANICAL DIMENSIONS: in Inches / mm
.149 (3.78
Dia.
.139 3.53)
(6.60
6.32)
(1.27
1.02)
.800 (20.32
.790 20.07) .545 (13.84
.535 13.58)
.685 (17.40
.665 16.89)
1.235 (31.37
1.195 30.35)
.260
.249
.050
.040
.545 (13.84
.535 13.60)
1
.045 (1.14
.035 0.89)
3 Places
2
3
.150(3.81) BSC
2 Places
.150(3.81) BSC
TO-254
DEVICE TYPE
N-CHANNEL MOSFET
TO-254 PACKAGE
PIN-1
DRAIN
PIN-2
SOURCE
PIN-3
GATE
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - www.sensitron.com E-Mail Address - [email protected]
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
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• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web - http://www.sensitron.com • E-Mail Address - [email protected]
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