681

SENSITRON
SEMICONDUCTOR
SHD219402
TECHNICAL DATA
DATA SHEET 681, REV. –
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
100 Volt, 0.092 Ohm, 18A MOSFET
Isolated Hermetic Ceramic Package
Fast Switching
Low RDS (on)
Electrically Equivalent to IRC140 Series
MAXIMUM RATINGS
ALL RATINGS ARE AT TC = 25 C UNLESS OTHERWISE SPECIFIED.
RATING
GATE TO SOURCE VOLTAGE
ON-STATE DRAIN CURRENT
@ TC = 25 C
@ TC = 100 C
PULSED DRAIN CURRENT
@ T C = 25 C
OPERATING AND STORAGE TEMPERATURE
TOTAL DEVICE DISSIPATION @ TC = 25 C
THERMAL RESISTANCE, JUNCTION TO CASE
SYMBOL
VGS
ID
TYP.
-
MAX.
20
18
12
72
+150
160
0.78
UNITS
Volts
Amps
IDM
TOP/TSTG
PD
RthJC
MIN.
-55
-
BVDSS
100
-
-
Volts
-
-
2.0
9.1
-
0.092
4.0
-
Volts
S(1/ )
-
-
Amps
C
Watts
C/W
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 1.0mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 12A
GATE THRESHOLD VOLTAGE
VDS = VGS, ID = 250 A
FORWARD TRANSCONDUCTANCE
VDS 15V, ID = 12A
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 0.8xMax. Rating, VGS = 0V
VDS = 0.8xMax. Rating, VGS = 0V, TJ = 125 C
GATE TO SOURCE LEAKAGE FORWARD
VGS = 20V
GATE TO SOURCE LEAKAGE REVERSE
VGS = -20V
TURN ON DELAY TIME
VDD = 50V,
RISE TIME
ID = 18A,
TURN OFF DELAY TIME
RG = 9.1 ,
FALL TIME
VGS = 10V
DIODE FORWARD VOLTAGE
TC = 25 C, IS = 18A,
VGS = 0V
REVERSE RECOVERY TIME
T J = 25 C,
IS = 18A,
di/ds = 100A/ sec, VDD 50V
INPUT CAPACITANCE
VGS = 0 V
OUTPUT CAPACITANCE
VDS = 25 V
REVERSE TRANSFER CAPACITANCE
f = 1.0MHz
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
-
-
td(ON)
tr
td(OFF)
tf
VSD
-
-
-
-
25
250
100
-100
21
145
64
105
1.5
trr
-
-
400
Ciss
Coss
Crss
-
A
nA
nsec
Volts
nsec
1600
550
120
-
©2000 Sensitron Semiconductor 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681
PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]
pF
SHD219402
SENSITRON
DATA SHEET 681, REV -
MECHANICAL DIMENSIONS: in Inches / mm
.145
(3.68)
.037
(.94)
.030 (.76) Min.
.050 (1.27)
2
.375
(9.53)
1
.140 (3.56)Typ.
.035 (.89) Min. .450 (11.43)
3
.415
(10.54)
.157 (3.99)
.625
(15.88)
LCC-3P
PINOUT TABLE
DEVICE TYPE
MOSFET
LCC-3P PACKAGE
PIN 1
DRAIN
PIN 2
SOURCE
PIN 3
GATE
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’
fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron
Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder
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exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
©2000 Sensitron Semiconductor 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681
PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]
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