4335

SENSITRON
SEMICONDUCTOR
SHD219603
TECHNICAL DATA
DATA SHEET 4335, REV. -
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
• 200 Volt, 0.045 Ohm, 50A MOSFET
• Isolated Hermetic Metal Package
• Low RDS (on)
MAXIMUM RATINGS
ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED.
RATING
GATE TO SOURCE VOLTAGE
ON-STATE DRAIN CURRENT
PULSED DRAIN CURRENT
OPERATING AND STORAGE TEMPERATURE
TOTAL DEVICE DISSIPATION
THERMAL RESISTANCE, JUNCTION TO CASE
SYMBOL
VGS
ID25
IDM
TJ/TSTG
PD
RθJC
MIN.
-55
-
TYP.
-
MAX.
±20
50
200
+150
270
0.45
UNITS
Volts
Amps
Amps
°C
Watts
°C/W
SYMBOL
BVDSS
MIN.
200
TYP.
-
MAX.
-
UNITS
Volts
RDS(ON)
-
-
0.045
Ω
VGS(th)
gfs
2.0
26
32
4.0
Volts
S(1/Ω)
IDSS
-
-
IGSS
-
-
td(ON)
tr
td(OFF)
tf
-
18
15
72
16
200
1000
100
-100
25
20
90
25
VSD
-
-
1.5
Volts
trr
-
400
-
nsec
Ciss
Coss
Crss
-
4400
800
280
-
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 250µA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 0.5ID25
GATE THRESHOLD VOLTAGE VDS = VGS, ID = 4.0 mA
FORWARD TRANSCONDUCTANCE
VDS = 10V, ID = 0.5ID25
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 0.8 x Max. rating, VGS = 0V, TJ = 25°C
TJ = 125°C
GATE TO SOURCE LEAKAGE FORWARD
VGS = 20V
GATE TO SOURCE LEAKAGE REVERSE
VGS = -20V
TURN ON DELAY TIME
VDS = 0.5V•
RISE TIME
VDSS, ID = 0.5•ID25
TURN OFF DELAY TIME
VGS=10V
FALL TIME
RG = 1.0Ω
DIODE FORWARD VOLTAGE
IF = IS, VGS = 0V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
REVERSE RECOVERY TIME
TJ = 25°C,
IF=25A, VR = 100V
di/dt = 100A/µsec
INPUT CAPACITANCE
VGS = 0 V,
OUTPUT CAPACITANCE
VDS = 25 V,
REVERSE TRANSFER CAPACITANCE
f = 1.0MHz
-
•221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798•
• World Wide Web Site - www.sensitron.com • E-Mail Address - [email protected] •
µA
nA
nsec
pF
SHD219603
SENSITRON
TECHNICAL DATA
DATA SHEET 4335, REV. MECHANICAL DIMENSIONS: in Inches / mm
.145
(3.68)
.037
(.94)
.030 (.76) Min.
.050 (1.27)
2
.375
(9.53)
1
.140 (3.56)Typ.
.035 (.89) Min. .450 (11.43)
3
.415
(10.54)
.157 (3.99)
.625
(15.88)
LCC-3P
PINOUT TABLE
DEVICE TYPE
N CHANNEL MOSFET IN A
LCC-3P PACKAGE
PIN 1
DRAIN
PIN 2
SOURCE
PIN 3
GATE
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’
fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
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•221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798•
• World Wide Web Site - www.sensitron.com • E-Mail Address - [email protected]
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