2037

SHD226405
SHD226405B
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 2037, REV. C
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
• 500 Volt, 0.85, Ohm, 7A MOSFET
• Isolated
• Hermetically Sealed
MAXIMUM RATINGS
ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED.
RATING
GATE TO SOURCE VOLTAGE
CONTINUOUS DRAIN CURRENT
TC = 25°C
CONTINUOUS DRAIN CURRENT
TC = 100°C
PULSED DRAIN CURRENT
@ TC = 25°C
OPERATING AND STORAGE TEMPERATURE
TERMAL RESISTANCE JUNCTION TO CASE
TOTAL DEVICE DISSIPATION @ TC = 25°C
SYMBOL
VGS
ID
ID
IDM
TOP/TSTG
RθJC
PD
MIN.
-55
-
TYP.
-
MAX.
±20
7
4.4
28
+150
2.1
100
UNITS
Volts
Amps
Amps
Amps
°C
°C/W
Watts
SYMBOL
BVDSS
MIN.
500
TYP.
-
MAX.
-
UNITS
Volts
-
-
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 1.0mA
DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 4.4A
GATE THRESHOLD VOLTAGE
VDS = VGS, ID = 250μA
FORWARD TRANSCONDUCTANCE
VDS ≥ 15V, ID = 4.4A
ZERO GATE VOLTAGE DRAIN CURRENT, TJ = 25°C
(VDS = 0.8 x Max. Rating, VGS = 0V), TJ = 125°C
GATE TO SOURCE LEAKAGE FORWARD
VGS = 20V
GATE TO SOURCE LEAKAGE REVERSE
VGS = -20V
TOTAL GATE CHARGE
VGS = 10V,
GATE TO SOURCE CHARGE
VDS = 250V,
GATE TO DRAIN CHARGE
ID = 7A
TURN ON DELAY TIME
VDD = 250V,
RISE TIME
ID = 7A,
TURN OFF DELAY TIME
RG = 9.1Ω,
FALL TIME
VGS = 10V
CONTIUOUS SOURCE CURRENT
DIODE FORWARD VOLTAGE
TJ = 25°C,IS = 7A
VGS = 0V
REVERSE RECOVERY TIME
TJ = 25°C,
IS = 7A,
di/dt ≤ = -100A/μsec,
REVERSE RECOVERY CHARGE
VDD ≤ 50V
INPUT CAPACITANCE
VGS = 0V, VDS = 25V,
OUTPUT CAPACITANCE
f = 1.0MHz
REVERSE TRANSFER CAPACITANCE
RDS(ON)
VGS(th)
gfs
2.0
-
7.7
IDSS
-
-
IGSS
-
-
Qg
Qgs
Qgd
td(ON)
tr
td(OFF)
tf
IS
VSD
-
-
-
-
21
73
72
51
7
-
trr
-
-
Qrr
Ciss
Coss
Crss
-
1300
310
120
Ω
0.85
4.0
25
250
100
-100
68.5
12.5
42.4
-
Volts
S(1/Ω)
μA
nA
nC
nsec
1.5
Amps
Volts
970
nsec
8.9
-
μC
©2002 Sensitron Semiconductor • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 •
PHONE (631) 586-7600 • FAX (631) 242-9798 • www.sensitron.com • [email protected] •
pF
SHD226405
SHD226405B
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 2037, REV. C
MECHANICAL DIMENSIONS: in Inches / mm
.150 (3.81
Dia.
.140 3.56)
.665 (16.89
.645 16.38)
.537 (13.64
.527 13.39)
1.132 (28.75
1.032 26.21)
.200 (5.08
.190 4.82)
.420 (10.67
.410 10.41)
1
2
.045 (1.14
.035 0.89)
.150 (3.81
Dia.
.140 3.56)
.430 (10.92
.410 10.41)
.665 (16.89
.645 16.38)
.537 (13.64
.527 13.39)
3
.717 (18.21
.687 17.45)
.200 (5.08
.190 4.82)
.420 (10.67
.410 10.41)
1
2
.045 (1.14
.035 0.89)
.430 (10.92
.410 10.41)
.120(3.05) BSC
.035 (0.89
.025 0.63)
3 Places
.035 (0.89
.025 0.63)
3 Places
.100(2.54) BSC
2 Places
.060(1.52)R
3
.100(2.54) BSC
2 Places
.170(4.32)
.250(6.35) Min
.120(3.05) BSC
Lead Form Option B
TO-257
PINOUT TABLE
DEVICE TYPE
MOSFET IN A
TO-257 PACKAGE
SUFFIX "R" VERSION
PIN 1
DRAIN
PIN 2
SOURCE
PIN 3
GATE
GATE
DRAIN
SOURCE
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’
fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron
Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder
maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
©2002 Sensitron Semiconductor • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 •
PHONE (631) 586-7600 • FAX (631) 242-9798 • www.sensitron.com • [email protected]
Similar pages