835

SENSITRON
SEMICONDUCTOR
SHD226208
TECHNICAL DATA
DATA SHEET 835, REV. -
HERMETIC POWER MOSFET
N-CHANNEL
DESCRIPTION: A 1000 VOLT, 1.4 AMP, 11 OHM MOSFET IN A HERMETIC TO-257 PACKAGE.
MAXIMUM RATINGS
RATING
GATE TO SOURCE VOLTAGE
CONTINUOUS DRAIN CURRENT
ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.
VGS=10V, TC = 25•C
VGS=10V, TC = 100•C
PULSED DRAIN CURRENT
@ TC = 25•C
OPERATING AND STORAGE TEMPERATURE
TERMAL RESISTANCE JUNCTION TO CASE
TOTAL DEVICE DISSIPATION @ TC = 25•C
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 250mA
DRAIN TO SOURCE ON STATE RESISTANCE
ID = 0.84A, VGS = 10V@TJ = 25•C
GATE THRESHOLD VOLTAGE
VDS = VGS, ID = 250mA
FORWARD TRANSCONDUCTANCE
VDS = 50Vdc, IDS = 0.84A
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 1000Vdc, VGS = 0Vdc
VDS = 800Vdc, VGS = 0Vdc, TJ = 125•C
GATE TO BODY LEAKAGE CURRENT
VGS = –20Vdc,
VDS = 0Vdc
TOTAL GATE CHARGE
(VGS = 10 Vdc,
GATE TO SOURCE CHARGE
VDS = 400Vdc,
GATE TO DRAIN CHARGE
ID = 1.4Adc)
TURN ON DELAY TIME
(VDS = 500V,
RISE TIME
ID = 1.4Adc,
TURN OFF DELAY TIME
VGS = 10 Vdc,
FALL TIME
RG = 18W)
FORWARD VOLTAGE,
(IS = 1.4Adc, VGS = 0V)
REVERSE RECOVERY TIME (IF = 1.4Adc, VGS = 0Vdc
REVERSE RECOVERY CHARGE
di/dt = 100A/msec)
INPUT CAPACITANCE
(VDS = 25 Vdc,
OUTPUT CAPACITANCE
VGS = 0 Vdc,
REVERSE TRANSFER CAPACITANCE
f = 1 MHz)
SYMBOL
VGS
ID
MIN.
-
TYP.
-
MAX.
–20
1.4
0.86
5.6
+150
1.45
85
IDM
TOP/TSTG
R JC
PD
-55
-
Amps(pk)
•C
•C/W
Watts
BVDSS
1000
-
-
Volts
RDS(ON)
VGS(th)
gfs
2.0
1.0
-
11
4.0
-
W
Volts
S(1/W)
-
-
IGSS
-
-
Qg
Qgs
Qgd
-
-
td(ON)
tr
td(ON)
tf
VSD
trr
Qrr
Ciss
Coss
Crss
-
9.4
17
58
31
130
0.46
500
52
17
IDSS
-
100
500
+100
-100
38
4.9
22
UNITS
Volts
Amps
mA
nA
nC
-
nsec
1.5
190
0.69
-
Volts
nsec
mC
pF
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - www.sensitron.com E-mail Address - [email protected]
SHD226208
SENSITRON
DATA SHEET 835
REVISION MECHANICAL DIMENSIONS: in Inches / mm
.150 (3.81
Dia.
.140 3.56)
.665 (16.89
.645 16.38)
.537 (13.64
.527 13.39)
1.132 (28.75
1.032 26.21)
.200 (5.08
.190 4.82)
.420 (10.67
.410 10.41)
1
2
.045 (1.14
.035 0.89)
.430 (10.92
.410 10.41)
3
.035 (0.89
.025 0.63)
3 Places
.100(2.54) BSC
2 Places
.120(3.05) BSC
TO-257
PINOUT TABLE
DEVICE TYPE
MOSFET IN A TO-257 PACKAGE
PIN 1
DRAIN
PIN 2
SOURCE
PIN 3
GATE
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - www.sensitron.com E-mail Address - [email protected]
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
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medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
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operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
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use at a value exceeding the absolute maximum rating.
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• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web - http://www.sensitron.com • E-Mail Address - [email protected] •