336

SENSITRON
SEMICONDUCTOR
SHD226305
SHD226305B
TECHNICAL DATA
DATA SHEET 336, REV. A
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
œ 500 Volt, 1.6 Ohm MOSFET
œ Isolated and Hermetically Sealed
œ Equivalent to IRFY430M
MAXIMUM RATINGS
RATING
GATE TO SOURCE VOLTAGE
CONTINUOUS DRAIN CURRENT
ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.
VGS=10V, TC = 25•C
VGS=10V, TC = 100•C
PULSED DRAIN CURRENT
@ TC = 25•C
OPERATING AND STORAGE TEMPERATURE
TERMAL RESISTANCE JUNCTION TO CASE
TOTAL DEVICE DISSIPATION @ TC = 25•C
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 1.0mA
DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 2.4A
GATE THRESHOLD VOLTAGE
VDS = VGS, ID = 250mA
FORWARD TRANSCONDUCTANCE
VDS ˜ 15V, ID = 2.4A
ZERO GATE VOLTAGE DRAIN CURRENT, TJ = 25•C
(VDS = 0.8xMax. Rating, VGS = 0V), TJ = 125•C
GATE TO SOURCE LEAKAGE FORWARD
VGS = 20V
GATE TO SOURCE LEAKAGE REVERSE
VGS = -20V
TOTAL GATE CHARGE
VGS = 10 V,
GATE TO SOURCE CHARGE
VDS = 0.5 x. VDS Max.,
GATE TO DRAIN CHARGE
ID =3.7A
TURN ON DELAY TIME
VDD = 250V,
RISE TIME
ID = 3.7A,
TURN OFF DELAY TIME
RG = 7.5W,
FALL TIME
VGS = 10V
DIODE FORWARD VOLTAGE
TJ = 25•C, IS = 3.7A,
VGS = 0V
REVERSE RECOVERY TIME
TJ = 25•C,
Is = 3.7A,
di/dt ˆ = 100A/msec,
REVERSE RECOVERY CHARGE
VDD ˆ 50V
INPUT CAPACITANCE
VGS = 0V, VDS = 25V
OUTPUT CAPACITANCE
f=1MHz
REVERSE TRANSFER CAPACITANCE
SYMBOL
VGS
ID
MIN.
-
TYP.
-
IDM
TOP/TSTG
R JC
PD
-55
-
BVDSS
UNITS
Volts
Amps
-
MAX.
–20
3.7
2.4
14
+150
1.45
80
500
-
-
Volts
RDS(ON)
VGS(th)
gfs
-
-
2.0
1.5
-
IDSS
-
-
IGSS
-
-
Qg
Qgs
Qgd
td(ON)
tr
td(OFF)
tf
VSD
19.8
2.2
5.5
-
-
-
trr
-
Qrr
Ciss
Coss
Crss
-
1.6
4.0
-
Amps
•C
•C/W
Watts
W
Volts
S(1/W)
-
25
250
100
-100
29.5
4.6
19.7
35
30
55
30
1.4
Volts
-
900
nsec
7.0
-
mC
610
135
65
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com E-mail Address - [email protected]
mA
nA
nC
nsec
pF
SHD226305
SHD226305B
SENSITRON
DATA SHEET 336
REVISION A
MECHANICAL DIMENSIONS: in Inches / mm
TO-257
.150 (3.81
Dia.
.140 3.56)
.665 (16.89
.645 16.38)
.537 (13.64
.527 13.39)
1.132 (28.75
1.032 26.21)
1
2
.045 (1.14
.035 0.89)
.430 (10.92
.410 10.41)
3
.035 (0.89
.025 0.63)
3 Places
.100(2.54) BSC
2 Places
.150 (3.81
Dia.
.140 3.56)
.717 (18.21
.687 17.45)
.200 (5.08
.190 4.82)
.420 (10.67
.410 10.41)
.120(3.05) BSC
.200 (5.08
.190 4.82)
.420 (10.67
.410 10.41)
.665 (16.89
.645 16.38)
.537 (13.64
.527 13.39)
1
2
.045 (1.14
.035 0.89)
.430 (10.92
.410 10.41)
.120(3.05) BSC
.035 (0.89
.025 0.63)
3 Places
.060(1.52)R
3
.100(2.54) BSC
2 Places
.170(4.32)
.250(6.35) Min
Lead Form Option B
PINOUT TABLE
DEVICE TYPE
MOSFET
TO-257 PACKAGE
PIN 1
DRAIN
PIN 2
SOURCE
PIN 3
GATE
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com E-mail Address - [email protected]
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
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medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
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4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
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• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web - http://www.sensitron.com • E-Mail Address - [email protected]
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