5362

SENSITRON
SEMICONDUCTOR
SHD225628
TECHNICAL DATA
DATA SHEET 5362, REV.-
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
 800 Volt, 0.8 Ohm, 12A MOSFET in TO-254 package
 Low RDS (on) and Low Qg
 High Avalanche Capability
 Add "C" to the part number after SHD for Ceramic Seals
MAXIMUM RATINGS
ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.
RATING
GATE TO SOURCE VOLTAGE
ON-STATE DRAIN CURRENT
@ TC = 25C
ON-STATE DRAIN CURRENT
@ TC = 100C
OPERATING AND STORAGE TEMPERATURE
TOTAL DEVICE DISSIPATION @ TC = 25C
THERMAL RESISTANCE, JUNCTION TO CASE
SYMBOL
VGS
ID
ID
TOP/TSTG
PD
RthJC
MIN.
-55
-
TYP.
-
MAX.
20
12
7
+150
190
0.66
UNITS
V
A
A
C
W
C/W
MIN.
800
TYP.
-
MAX.
-
UNITS
V
-
0.62
0.80

3.0
-
13
5.0
-
V
S(1/)
-
25
250
100
-100
-
A
ELECTRICAL CHARACTERISTICS (Tc= 250C, unless otherwise specified)
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 0.25mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 6A
GATE THRESHOLD VOLTAGE VDS = VGS, IDS = 0.25mA
FORWARD TRANSCONDUCTANCE
VDS = 50V, IDS = 6A
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 800V, VGS = 0V
VDS = 640V, VGS = 0V, TJ = 125C
GATE TO SOURCE LEAKAGE FORWARD
VGS = 20V
GATE TO SOURCE LEAKAGE REVERSE
VGS = -20V
TURN ON DELAY TIME
VDD = 400V,
RISE TIME
I D = 12A,
TURN OFF DELAY TIME
RG = 22
FALL TIME
TOTAL GATE CHARGE
ID = 12A,
GATE TO SOURCE CHARGE
VGS = 10V,
GATE TO DRAIN CHARGE
VDS = 400V
DIODE FORWARD VOLTAGE
TC = 25C, IS = 12A,
VGS = 0V
REVERSE RECOVERY CHARGE
TJ = 25C,
di/dt = 100A/s, IF = 12A
REVERSE RECOVERY TIME
T J = 25C,
di/dt  100A/s, IF = 12A
INPUT CAPACITANCE
OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
VGS = 0 V
VDS = 25 V
f = 1MHz
SYMBOL
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
-
-
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
VSD
-
-
60
150
155
110
68
15
32
-
QRR
-
12
trr
-
850
nA
ns
90
1.5
nC
nC
nC
V
-
C
ns
Ciss
Coss
Crss
-
2700
275
30
-
© 2013 Sensitron Semiconductor  221 WEST INDUSTRY COURT  DEER PARK, NY 11729-4681
 PHONE (631) 586-7600  FAX (631) 242-9798  www.sensitron.com  [email protected]
pF
SHD225628
SENSITRON
TECHNICAL DATA
DATA SHEET 5362, REV. MECHANICAL DIMENSIONS: in Inches / mm
.149 (3.78
Dia.
.139 3.53)
.260
.249
.050
.040
.545 (13.84
.535 13.60)
.800 (20.32
.790 20.07) .545 (13.84
.535 13.58)
.685 (17.40
.665 16.89)
1.235 (31.37
1.195 30.35)
(6.60
6.32)
(1.27
1.02)
1
2
3
.045 (1.14
.035 0.89)
3 Places
.150(3.81) BSC
.150(3.81) BSC
2 Places
TO-254
PINOUT TABLE
DEVICE TYPE
N-CHANNEL MOSFET, IN A
TO-254 PACKAGE
PIN 1
DRAIN
PIN 2
SOURCE
PIN 3
GATE
D
N-CHANNEL
G
S
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datasheet(s).
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© 2013 Sensitron Semiconductor  221 WEST INDUSTRY COURT  DEER PARK, NY 11729-4681
 PHONE (631) 586-7600  FAX (631) 242-9798  www.sensitron.com  [email protected]
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