REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make change to input leakage current test, overvoltage protected test, positive supply current test, negative supply current test, and break-before-make time delay test as specified in table I herein. - ro 98-12-15 Raymond Monnin B Make changes to the descriptive designator under 1.2.4. Change ratings values under 1.3. Editorial changes throughout. -lgt 99-06-15 Raymond Monnin C Make changes to figure 3 timing diagrams. -rrp 00-06-29 Raymond Monnin D Update drawing to current requirements. Delete paragraphs 4.4.4.2 and 4.4.4.3. Editorial changes throughout. - drw 06-07-28 Raymond Monnin REV SHEET REV D D SHEET 15 16 REV STATUS REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Sandra Rooney STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http://www.dscc.dla.mil CHECKED BY Sandra Rooney APPROVED BY THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE Michael A. Frye DRAWING APPROVAL DATE 96-02-27 AMSC N/A REVISION LEVEL D MICROCIRCUIT, LINEAR, RADIATION HARDENED CMOS, MULTIPLEXER / DEMULTIPLEXER WITH ACTIVE OVERVOLTAGE PROTECTION, MONOLITHIC SILICON SIZE CAGE CODE A 67268 SHEET DSCC FORM 2233 APR 97 1 OF 5962-95694 16 5962-E571-06 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 D 95694 Federal stock class designator \ RHA designator (see 1.2.1) 01 V E A Device type (see 1.2.2) Device class designator (see 1.2.3) Case outline (see 1.2.4) Lead finish (see 1.2.5) / \/ Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device types. The device types identify the circuit function as follows: Device type Generic number 01 HS548RH 02 HS549RH Circuit function Radiation hardened DI CMOS single 8-channel MUX / DEMUX with active overvoltage protection Radiation hardened DI CMOS single 4-channel MUX / DEMUX with active overvoltage protection 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, nonJAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline. The case outline is as designated in MIL-STD-1835 as follows: Outline letter E Descriptive designator Terminals Package style GDIP1-T16 or CDIP2-T16 16 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95694 A REVISION LEVEL D SHEET 2 1.3 Absolute maximum ratings. 1/ Supply voltage between +V and -V ............................................................................ Supply voltage between +V and ground .................................................................... Supply voltage between -V and ground ..................................................................... Digital input voltage range +VEN, +VA ................................................................................................................ -VEN, -VA ................................................................................................................. Analog input voltage range +VS .......................................................................................................................... -VS ........................................................................................................................... Peak current, S or D (pulsed at 1 ms, 10 percent duty cycle maximum) ................................................... Storage temperature range ........................................................................................ Maximum power dissipation at TA = +125°C (PD) ....................................................... Thermal resistance, junction-to-case (θJC) ................................................................. Thermal resistance, junction-to-ambient (θJA) ............................................................ Lead temperature (soldering, 10 seconds) ................................................................ Junction temperature (TJ) .......................................................................................... +44 V +22 V -25 V +VSUPPLY + 4 V -VSUPPLY - 4 V +VSUPPLY + 20 V -VSUPPLY - 20 V 40 mA -65°C to +150°C 0.63 W 2/ 24°C/W 80°C/W +300°C +175°C 1.4 Recommended operating conditions. Operating supply voltage (±VSUPPLY) .......................................................................... Analog input voltage (VS) ........................................................................................... Logic low level (VAL) ................................................................................................... Logic high level (VAH) ................................................................................................. Maximum RMS current, S or D .................................................................................. Ambient operating temperature range (TA) ................................................................ ±15 V ±VSUPPLY 0 V to 0.8 V +4 V to +VSUPPLY 8 mA -55°C to +125°C 1.5 Radiation features. Maximum total dose available (dose rate = 50-300 rads (Si)/s) .................................. 10 Krads (Si) Latch-up 3/ ................................................................................................................. None 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 MIL-STD-1835 - Test Method Standard Microcircuits. Interface Standard Electronic Component Case Outlines. _______ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ If device power exceeds package dissipation capacity, provide heat sinking or derate linearly ( the derating is based on θJA) at 12.5 mW/°C for case outline E. 3/ Guaranteed by process or design, not tested. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95694 A REVISION LEVEL D SHEET 3 DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 MIL-HDBK-780 - List of Standard Microcircuit Drawings. Standard Microcircuit Drawings. (Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or http://assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth tables. The truth tables shall be as specified on figure 2. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be as specified on table III. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95694 A REVISION LEVEL D SHEET 4 TABLE I. Electrical performance characteristics. Test Input leakage current 1/ Symbol IIH IIL Conditions -55°C ≤ TA ≤ +125°C -V = -15 V, +V = +15 V VEN = 4.0 V unless otherwise specified Measure inputs sequentially, connect all unused inputs to +IS(OFF) M, D 2/ VS = -10 V, VEN = 0.8 V, all unused inputs = +10 V, VEN = 0.5 V, M, D 2/ +ID(OFF) VD = +10 V, VEN = 0.8 V, all unused inputs = -10 V VEN = 0.5 V, M, D 2/ -ID(OFF) 1.0 -1.0 1.0 -1.0 1.0 -10 +10 2, 3 -50 +50 1 -50 +50 -10 +10 2, 3 -50 +50 1 -50 +50 1 VD = +10 V Leakage current into the drain terminal of an “OFF” switch -1.0 1 VEN = 0.5 V, M, D 2/ 01, 02 VEN = 0.5 V, M, D 2/ 01, 02 01, 02 1 01, 02 -10 +10 2, 3 01 -200 +200 02 -100 +100 01 -200 +200 02 -100 +100 1 01, 02 -10 +10 2, 3 01 -200 +200 02 -100 +100 01 -200 +200 02 -100 +100 1 VD = -10 V, VEN = 0.8 V, all unused inputs = +10 V Unit Max 1 VS = +10 V, VEN = 0.8 V, all unused inputs = -10 V, Limits Min 1, 2, 3 VD = -10 V -IS(OFF) Device type GND IIH, IIL Leakage current into the source terminal of an “OFF” switch Group A subgroups 1 µA nA nA nA See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95694 A REVISION LEVEL D SHEET 5 TABLE I. Electrical performance characteristics – continued. Test Leakage current from an “ON” driver into the switch (drain) Symbol +ID(ON) Conditions -55°C ≤ TA ≤ +125°C -V = -15 V, +V = +15 V Group A subgroups VEN = 4.0 V unless otherwise specified VD = +10 V, VS = +10 V, all unused inputs = -10 V VEN = 4.5 V, M, D 2/ -ID(ON) VEN = 4.5 V, M, D 2/ Overvoltage protected, leakage current into the +ID(OFF) drain terminal of an “ON” switch Overvoltage -ID(OFF) Overvoltage Positive supply current +I -I VA = 0 V, VEN = 4.0 V +ISBY -200 +200 02 -100 +100 01 -200 +200 02 -100 +100 1 01, 02 -10 +10 2, 3 01 -200 +200 02 -100 +100 01 -200 +200 02 -100 +100 01, 02 -2.0 +2.0 -5.0 +5.0 -2.0 +2.0 -5.0 +5.0 1, 2, 3 01, 02 01, 02 1 VA = 0 V, VEN = 4.0 V 01, 02 1 VA = 0 V, VEN = 0 V nA µA µA 2.0 mA -1.0 mA -1.0 1, 2, 3 M, D 2/ nA 2.0 1, 2, 3 VEN = 4.5 V, M, D 2/ Standby positive supply current 01 1 VEN = 4.5 V, M, D 2/ Negative supply current 2, 3 1, 2, 3 VEN = 0.5 V, M, D 2/ Max +10 1 VS = -33 V, VD = 0 V, VEN = 0.8 V Min -10 1, 2, 3 VEN = 0.5 V, M, D 2/ Unit 01, 02 1 VS = 33 V, VD = 0 V, VEN = 0.8 V Limits 1 1 VD = -10 V, VS = -10 V, all unused inputs = +10 V Device type 01, 02 1 2.0 mA 2.0 See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95694 A REVISION LEVEL D SHEET 6 TABLE I. Electrical performance characteristics – continued. Test Symbol Conditions -55°C ≤ TA ≤ +125°C -V = -15 V, +V = +15 V Group A subgroups Device type VEN = 4.0 V unless otherwise specified Standby negative supply current -ISBY Min VA = 0 V, VEN = 0 V 1, 2, 3 M, D 2/ Switch “ON” resistance +RDS1 VS = 10 V, ID = -100 µA VS = -10 V, ID = +100 µA +∆RDS1 VEN = 4.5 V, M, D 2/ between channels -∆RDS1 Logic level voltage VAL 1800 1 1800 01, 02 2, 3 1800 1 1800 1 3/, 4/ 01, 02 7 01, 02 % 7 % 7 01, 02 0.8 1 V 0.5 1, 2, 3 M, D 2/ Ω 7 1, 2, 3 3/, 4/ Ω 1500 1 M, D 2/ VAH 2, 3 1 VEN = 4.5 V, M, D 2/ mA 1500 1 ((-RDS1MAX)-(-RDS1MIN)x100) / -RDS1AVE Max -1.0 01, 02 1 ((+RDS1MAX)-(+RDS1MIN)x100) / RDS1AVE Unit -1.0 1 VEN = 4.5 V, M, D 2/ Difference in switch “ON” resistance 01, 02 1 VEN = 4.5 V, M, D 2/ -RDS1 Limits 01, 02 1 4.0 V 4.5 Capacitance: Address CA V+ = V- = 0 V, f = 1 MHz, 5/ TA = +25°C, see 4.4.1d 4 01, 02 10 pF Capacitance: Output switch COS V+ = V- = 0 V, f = 1 MHz, 5/ 4 01 45 pF 02 25 TA = +25°C, see 4.4.1d Capacitance: Input switch CIS V+ = V- = 0 V, f = 1 MHz, 5/ TA = +25°C, see 4.4.1d 4 01, 02 15 pF Charge transfer error VCTE VS = GND, f = 200 kHz, 5/ VGEN = 0 V to 5 V, TA = +25°C 4 01, 02 10 mV See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95694 A REVISION LEVEL D SHEET 7 TABLE I. Electrical performance characteristics – continued. Test Symbol Off isolation VISO Functional test FT tOPEN Break-before-make time delay Conditions -55°C ≤ TA ≤ +125°C -V = -15 V, +V = +15 V Group A subgroups VEN = 4.0 V unless otherwise specified VEN = 0.8 V, RL = 1 kΩ, 5/ CL = 15 pF, VS = 7 V rms, f = 100 kHz, TA = +25°C tA 4 01, 02 See 4.4.1b 7, 8 01, 02 See figure 3 9 01, 02 See figure 3 M, D 2/ tON(EN) See figure 3 tOFF(EN) See figure 3 ns 5 500 10, 11 1,000 9 1,000 01, 02 1,000 9 1,000 01, 02 ns 500 10, 11 9 M, D 2/ 25 9 9 M, D 2/ Max dB 5 01, 02 Unit -50 10, 11 9 to I/O channels times Enable to I/O Limits Min M, D 2/ Propagation delay time: Address inputs Device type ns 500 10, 11 1,000 9 1,000 ns 1/ Input current of one input mode. 2/ Devices supplied to this drawing meet all levels M and D of irradiation. However, these devices are only tested at D level. Pre and post irradiation values are identical unless otherwise specified in Table I. 3/ Used for forcing conditions for all DC tests, unless otherwise specified. 4/ To drive from DTL / TTL circuits, 1 kΩ pull-up resistors to +5.0 V supply are recommended. 5/ Guaranteed, if not tested, to the limits as specified. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95694 A REVISION LEVEL D SHEET 8 Case outline E Device types 01 Terminal number 02 Terminal symbol 1 A0 A0 2 ENABLE ENABLE 3 -VSUPPLY -VSUPPLY 4 IN 1 IN 1A 5 IN 2 IN 2A 6 IN 3 IN 3A 7 IN 4 IN 4A 8 OUT OUTA 9 IN 8 OUTB 10 IN 7 IN 4B 11 IN 6 IN 3B 12 IN 5 IN 2B 13 +VSUPPLY IN 1B 14 GND +VSUPPLY 15 A2 GND 16 A1 A1 FIGURE 1. Terminal connections. Device type 01 A2 A1 A0 EN X L L L L H H H H X L L H H L L H H X L H L H L H L H L H H H H H H H H “ON” CHANNEL NONE 1 2 3 4 5 6 7 8 Device type 02 A1 A0 EN X L L H H X L H L H L H H H H “ON” CHANNEL PAIR NONE 1 2 3 4 FIGURE 2. Truth tables. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95694 A REVISION LEVEL D SHEET 9 FIGURE 3. Timing diagrams. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95694 A REVISION LEVEL D SHEET 10 FIGURE 3. Timing diagrams - continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95694 A REVISION LEVEL D SHEET 11 FIGURE 3. Timing diagrams - continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95694 A REVISION LEVEL D SHEET 12 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 82 (see MIL-PRF-38535, appendix A) 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C. or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (2) TA = +125°C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95694 A REVISION LEVEL D SHEET 13 4.4.1 Group A inspection. a. Tests shall be as specified in table IIA herein. b. For device class M, subgroups 7 and 8 tests shall be sufficient to verify the truth table. For device classes Q and V, subgroups 7 and 8 shall include verifying the functionality of the device. c. Subgroups 5 and 6 in table I, method 5005 of MIL-STD-883 shall be omitted. d. Subgroups 4 (CA, CIS, and COS measurements) should be measured only for initial qualification and after any process or design changes which may affect input or output capacitance. TABLE IIA. Electrical test requirements. Test requirements Interim electrical parameters (see 4.2) Final electrical parameters (see 4.2) Group A test requirements (see 4.4) Group C end-point electrical parameters (see 4.4) Group D end-point electrical parameters (see 4.4) Group E end-point electrical parameters (see 4.4) Subgroups (in accordance with MIL-PRF-38535, table III) Subgroups (in accordance with MIL-STD-883, method 5005, table I) Device class M Device class Q Device class V 1, 7, 9 1, 7, 9 1, 7, 9 1, 2, 3, 7, 8, 9, 10, 11 1/ 1, 2, 3, 7, 8, 9, 10, 11 1/ 1, 2, 3, 7, 8, 9, 10, 11, ∆, 1/, 2/ 1, 2, 3, 4, 7, 8, 9, 10, 11 3/ 1, 2, 3, 4, 7, 8, 9, 10, 11 3/ 1, 2, 3, 4, 7, 8, 9, 10, 11 3/ 1, 2, 3, 7, 8, 9, 10, 11 1, 2, 3, 7, 8, 9, 10, 11 1, 2, 3, 7, 8, 9, 10, 11, ∆ 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9 1/ PDA applies to subgroup 1. For class V to subgroups 1 and ∆. 2/ Delta limits (see table IIB) shall be required and the delta values shall be computed with reference to the zero hour electrical parameters (see table I). 3/ Subgroup 4, if not tested, shall be guaranteed to the limits specified in table I. TABLE IIB. Burn-in delta parameters and group C delta parameters (+25°C). Parameters Leakage current into the source terminal of an “OFF” switch Leakage current into the drain terminal of an “OFF” switch Leakage current from an “ON” driver into the switch (drain and source) Switch on resistance Delta limits IS(OFF) ±10 nA ID(OFF) ±10 nA ID(ON) ±10 nA RDS ±150 Ω Positive supply current I+ ±200 µA Negative supply current I- ±100 µA Positive standby supply current +ISBY ±200 µA Negative standby supply current -ISBY ±100 µA Input leakage current IIL, IIH ±100 µA STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 Symbol SIZE 5962-95694 A REVISION LEVEL D SHEET 14 TABLE III. Irradiation test connections. (TA = +25°C ±5°C, +VSUPPLY = +15 V ±5%, -VSUPPLY = -15 V ±5%) Device type 01 Test Ground V+ V- Radiation exposure 2,8,14 1/ 13 3 +1 V ±5% 4,5,6,7,9,10,11,12 5 V ±5% 1,15,16 Device type 02 Test Ground V+ V- Radiation exposure 2,8,9,15 2/ 14 3 1/ 2/ +1 V ±5% 4,5,6,7,10,11,12,13 5 V ±5% 1,16 Pin 8 has a series resistor (RS) = 10 kΩ ±5%. Pins 8 and 9 each have a series resistor (RS) = 10 kΩ ±5%. 4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein. 4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883: a. Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-883. b. TA = +125°C, minimum. c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. 4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD883. 4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein. 4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. End-point electrical parameters shall be as specified in table IIA herein. b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25°C ±5°C, after exposure, to the subgroups specified in table IIA herein. 4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883 method 1019 condition A and as specified herein. 4.4.4.1.1 Accelerated aging test. Accelerated aging tests shall be performed on all devices requiring a RHA level greater than 5k rads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be the preirradiation end-point electrical parameter limit at 25°C ±5°C. Testing shall be performed at initial qualification and after any design or process changes which may affect the RHA response of the device. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95694 A REVISION LEVEL D SHEET 15 4.4.4.2 Dose rate burnout. When required by the customer, test shall be performed on devices, SEC, or approved test structures at technology qualifications and after any design or process changes which may effect the RHA capability of the process. Dose rate burnout shall be performed in accordance with test method 1023 of MIL-STD-883 and as specified herein. 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. 6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor prepared specification or drawing. 6.1.2 Substitutability. Device class Q devices will replace device class M devices. 6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal. 6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus (DSCC) when a system application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0544. 6.4 Comments. Comments on this drawing should be directed to DSCC-VA , Columbus, Ohio 43218-3990, or telephone (614) 692-0547. 6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-38535 and MIL-HDBK-1331. 6.6 Sources of supply. 6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535. The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and have agreed to this drawing. 6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103. The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by DSCC-VA. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95694 A REVISION LEVEL D SHEET 16 STANDARD MICROCIRCUIT DRAWING BULLETIN DATE: 06-07-28 Approved sources of supply for SMD 5962-95694 are listed below for immediate acquisition information only and shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by DSCC-VA. This information bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DSCC maintains an online database of all current sources of supply at http://www.dscc.dla.mil/Programs/Smcr/. Standard microcircuit drawing PIN 1/ Vendor CAGE number Vendor similar PIN 2/ 5962D9569401VEA 3/ HS1-0548RH-Q 5962D9569401VEC 34371 HS1B-0548RH-Q 5962D9569402VEA 3/ HS1-0549RH-Q 5962D9569402VEC 3/ HS1B-0549RH-Q 1/ The lead finish shown for each PIN representing a hermetic package is the most readily available from the manufacturer listed for that part. If the desired lead finish is not listed contact the vendor to determine its availability. 2/ Caution. Do not use this number for item acquisition. Items acquired to this number may not satisfy the performance requirements of this drawing. 3/ Not available from an approved source of supply. Vendor CAGE number 34371 Vendor name and address Intersil Corporation 1001 Murphy Ranch Road Milpitas, CA 95035-6803 The information contained herein is disseminated for convenience only and the Government assumes no liability whatsoever for any inaccuracies in the information bulletin.