26c31 summary tid

Total dose testing of the HS-26CT31RH Radiation Hardened Quad Differential Line Driver
Nick van Vonno
Intersil Corporation
Revision 0
August 2010
Table of Contents
1.
2.
3.
4.
5
6
7
8
9
Introduction
Reference Documents
Part Description
Test Description
4.1 Irradiation facility
4.2 Test fixturing
4.3 Characterization equipment and procedures
4.4 Experimental Matrix
4.5 Downpoints
Results
5.1 Test results
5.2 Variables data
Discussion
Conclusion
Appendices
Document revision history
1
1. Introduction
This report reports the results of a low and high dose rate total dose test of the HS-26CT31RH
quad differential line driver. The test was conducted in order to determine the sensitivity of the part
to the total dose environment and to determine if dose rate and bias sensitivity exist.
2. Reference Documents
MIL-STD-883G test method 1019.7
HS-26CT31RH data sheet
DSCC Standard Microcircuit Drawing (SMD) 5962-95632
3: Part Description
The Intersil HS-26CT31RH is a quad differential line driver designed for digital data transmission
over balanced lines and meets the requirements of EIA standard RS-422. Radiation hardened
CMOS processing assures low power consumption, high speed, and reliable operation in the most
severe radiation environments.
The HS-26CT31RH accepts TTL signal levels and converts them to RS-422 compatible outputs.
This circuit uses special outputs that enable the drivers to power down without loading down the
bus. Enable and disable pins allow several devices to be connected to the same data source and
addressed independently.
Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus
(DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical
Specifications for these devices are contained in SMD 5962-95632. A "hot-link" is provided on our
homepage for downloading.
Figure 1: HS-26CT31RH block diagram.
2
4: Test Description
4.1 Irradiation Facilities
High dose rate testing was performed using a Gammacell 220 60Co irradiator located in the
Palm Bay, Florida Intersil facility. Low dose rate testing was performed on a subcontract basis at
White Sands Missile Range (WSMR) Survivability, Vulnerability and Assessment Directorate
(SVAD), White Sands, NM. The high dose rate irradiations were done at 55rad(Si)/s and the low
dose rate work was performed at 0.010rad(Si)/s, both per MIL-STD-883 Method 1019.7. Dosimetry
for both tests was performed using Far West Technology radiochromic dosimeters and readout
equipment.
4.2 Test Fixturing
Figure 2 shows the configuration used for biased irradiation in conformance with Standard
Microcircuit Drawing (SMD) 5962-95632.
Figure 2: Irradiation bias configuration for the HS-26CT31RH per Standard Microcircuit
Drawing (SMD) 5962-95632.
3
4.3 Characterization equipment and procedures
All electrical testing was performed outside the irradiator using the production automated test
equipment (ATE) with datalogging at each downpoint. Downpoint electrical testing was performed
at room temperature. The low dose rate testing at a remote site introduced some challenges, and
shipping had to be done in a foam container with a frozen Gelpack™ along with a strip chart
temperature recorder in order to remain well within the temperature limits imposed by MIL-STD-883
Test Method 1019.7.
4.4 Experimental matrix
Testing proceeded in accordance with the guidelines of MIL-STD-883 Test Method 1019.7.
The experimental matrix consisted of five samples irradiated at high dose rate with all pins
grounded, five samples irradiated at high dose rate under bias, five samples irradiated at low dose
rate with all pins grounded and five samples irradiated at low dose rate under bias. One control unit
was used.
Samples of the HS-26CT31RH die were drawn from wafer 3 of production lot DCXLCBAA and
were packaged in the standard hermetic 16-pin solder-sealed flatpack (CDFP4-F16) production
package. Samples were processed through the standard burnin cycle before irradiation, as required
by MIL-STD-883, and were screened to the SMD 5962-95632 limits at room, low and high
temperatures prior to the test.
4.5 Downpoints
Downpoints for the tests were zero, 50krad(Si), 100krad(Si) and 150krad(Si) for the high dose
rate test and zero, 10krad(Si), 25krad(Si), 50krad(Si), 100krad(Si), 125krad(Si) and 150krad(Si) for
the low dose rate test.
5: Results
5.1 Test results
Testing at both dose rates to 150krad(Si) of the HS-26CT31RH is complete and showed no
reject devices after irradiation to 150krad(Si), screening to the SMD pre- and post-irradiation limits.
As a determinant of low dose rate sensitivity, MIL-STD-883 Test Method 1019.7 specifies that a
delta_parameter calculation be performed for any ‘sensitive parameters’ that exceed the preirradiation Group A limits, but not necessarily the post-irradiation limits. These calculations were not
required as there were no rejects against the pre-irradiation Group A limits, meaning there are no
formal ‘sensitive parameters’. Accordingly, the part is considered ELDRS-free up to 150krad(Si).
No bias sensitivity was noted.
5.2 Variables data
The plots in Figures 3 through 44 show data at all downpoints. The plots show the median of
key parameters as a function of total dose for each of the four irradiation conditions.
4
High level output voltage, channel A, V
4.5
High dose rate, unbiased
4.3
High dose rate, biased
4.1
Low dose rate, unbiased
3.9
Low dose rate, biased
3.7
3.5
3.3
3.1
2.9
2.7
2.5
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 3: HS-26CT31RH HIGH level output voltage, channel A, as a function of total dose irradiation at low and high
dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.01rad(Si)/s
and the high dose rate 55rad(Si)/s. Sample size for each cell was 5. The post-irradiation SMD limit is 500mV maximum.
High level output voltage, channel B, V
4.5
4.3
High dose rate, unbiased
High dose rate, biased
4.1
Low dose rate, unbiased
3.9
Low dose rate, biased
3.7
3.5
3.3
3.1
2.9
2.7
2.5
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 4: HS-26CT31RH HIGH level output voltage, channel B, as a function of total dose irradiation at low and high
dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.01rad(Si)/s
and the high dose rate 55rad(Si)/s. Sample size for each cell was 5. The post-irradiation SMD limit is 500mV maximum.
5
High level output voltage, channel C, V
4.5
High dose rate, unbiased
4.3
High dose rate, biased
4.1
Low dose rate,unbiased
3.9
Low dose rate, biased
3.7
3.5
3.3
3.1
2.9
2.7
2.5
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 5: HS-26CT31RH HIGH level output voltage, channel C, as a function of total dose irradiation at low and high
dose rate for the unbiased and biased cases. The post-irradiation SMD limit is 500mV maximum.
High level output voltage, channel D, V
4.5
4.3
High dose rate, unbiased
High dose rate, biased
4.1
Low dose rate, unbiased
3.9
Low dose rate, biased
3.7
3.5
3.3
3.1
2.9
2.7
2.5
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 6: HS-26CT31RH HIGH level output voltage, channel D, as a function of total dose irradiation at low and high
dose rate for the unbiased and biased cases. The post-irradiation SMD limit is 500mV maximum.
6
Low level output voltage, channel A, mV
500
450
High dose rate, unbiased
High dose rate, biased
400
Low dose rate, unbiased
350
Low dose rate, biased
300
250
200
150
100
50
0
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 7: HS-26CT31RH LOW level output voltage, channel A, as a function of total dose irradiation at low and high
dose rate for the unbiased and biased cases. The post-irradiation SMD limit is 2.5V minimum.
Low level output voltage, channel B, mV
500
450
High dose rate, unbiased
High dose rate, biased
400
Low dose rate, unbiased
350
Low dose rate, biased
300
250
200
150
100
50
0
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 8: HS-26CT31RH LOW level output voltage, channel B, as a function of total dose irradiation at low and high
dose rate for the unbiased and biased cases. The post-irradiation SMD limit is 2.5V minimum.
7
Low level output voltage, channel C, mV
500
450
High dose rate, unbiased
High dose rate, biased
400
Low dose rate, unbiased
350
Low dose rate, biased
300
250
200
150
100
50
0
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 9: HS-26CT31RH LOW level output voltage, channel C, as a function of total dose irradiation at low and high
dose rate for the unbiased and biased cases. The post-irradiation SMD limit is 2.5V minimum.
Low level output voltage, channel D, mV
500
450
High dose rate, unbiased
High dose rate, biased
400
Low dose rate, unbiased
350
Low dose rate, biased
300
250
200
150
100
50
0
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 10: HS-26CT31RH LOW level output voltage, channel D, as a function of total dose irradiation at low and high
dose rate for the unbiased and biased cases. The post-irradiation SMD limit is 2.5V minimum.
8
Differential output voltage, VT, channel A, V
5.00
High dose rate, unbiased
4.50
High dose rate, biased
Low dose rate, unbiased
4.00
Low dose rate, biased
3.50
3.00
2.50
2.00
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 11: HS-26CT31RH differential output voltage, VT, channel A, as a function of total dose irradiation at low and
high dose rate for the unbiased and biased cases. The post-irradiation SMD limit is 2V minimum.
Differential output voltage, VT, channel B, V
5.00
High dose rate, unbiased
4.50
High dose rate, biased
Low dose rate, unbiased
4.00
Low dose rate, biased
3.50
3.00
2.50
2.00
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 12: HS-26CT31RH differential output voltage, VT, channel B, as a function of total dose irradiation at low and
high dose rate for the unbiased and biased cases. The post-irradiation SMD limit is 2V minimum.
9
Differential output voltage, VT, channel C, V
5.00
High dose rate, unbiased
4.50
High dose rate, biased
Low dose rate, unbiased
4.00
Low dose rate, biased
3.50
3.00
2.50
2.00
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 13: HS-26CT31RH differential output voltage, VT, channel C, as a function of total dose irradiation at low and
high dose rate for the unbiased and biased cases. The post-irradiation SMD limit is 2V minimum.
Differntial output voltage, VT, channel D, V
5.00
High dose rate, unbiased
4.50
High dose rate, biased
Low dose rate, unbiased
4.00
Low dose rate, biased
3.50
3.00
2.50
2.00
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 14: HS-26CT31RH differential output voltage, VT, channel D, as a function of total dose irradiation at low and
high dose rate for the unbiased and biased cases. The post-irradiation SMD limit is 2V minimum.
10
Differential output voltage, VT(bar), ch A, V
5.00
High dose rate, unbiased
4.50
High dose rate, biased
Low dose rate, unbiased
4.00
Low dose rate, biased
3.50
3.00
2.50
2.00
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 15: HS-26CT31RH differential output voltage, VT(bar), channel A, as a function of total dose irradiation at low
and high dose rate for the unbiased and biased cases. The post-irradiation SMD limit is 2V minimum.
Differential output voltage, VT(bar), ch B, V
5.00
High dose rate, unbiased
4.50
High dose rate, biased
Low dose rate, unbiased
4.00
Low dose rate, biased
3.50
3.00
2.50
2.00
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 16: HS-26CT31RH differential output voltage, VT(bar), channel B, as a function of total dose irradiation at low
and high dose rate for the unbiased and biased cases. The post-irradiation SMD limit is 2V minimum.
11
Differential output voltage, VT(bar), ch C, V
5.00
High dose rate, unbiased
4.50
High dose rate, biased
Low dose rate, unbiased
4.00
Low dose rate, biased
3.50
3.00
2.50
2.00
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 17: HS-26CT31RH differential output voltage, VT(bar), channel C, as a function of total dose irradiation at low
and high dose rate for the unbiased and biased cases. The post-irradiation SMD limit is 2V minimum.
Differential output voltage, VT((bar), ch D, V
5.00
High dose rate, unbiased
4.50
High dose rate, biased
Low dose rate, unbiased
4.00
Low dose rate, biased
3.50
3.00
2.50
2.00
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 18: HS-26CT31RH differential output voltage, VT(bar), channel D, as a function of total dose irradiation at low
and high dose rate for the unbiased and biased cases. The post-irradiation SMD limit is 2V minimum.
12
Differential output voltage match, Ch A, mV
400
High dose rate, unbiased
300
High dose rate, biased
200
Low dose rate, unbiased
Low dose rate, biased
100
0
-100
-200
-300
-400
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 19: HS-26CT31RH differential output voltage match, channel A, as a function of total dose irradiation at low and
high dose rate for the unbiased and biased cases. The post-irradiation SMD limits are -400mV to +400mV.
Differential output voltage match, Ch B, mV
400
High dose rate, unbiased
300
High dose rate, biased
200
Low dose rate, unbiased
Low dose rate, biased
100
0
-100
-200
-300
-400
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 20: HS-26CT31RH differential output voltage match, channel B, as a function of total dose irradiation at low and
high dose rate for the unbiased and biased cases. The post-irradiation SMD limits are -400mV to +400mV.
13
Differential output voltage match, Ch C, mV
400
High dose rate, unbiased
300
High dose rate, biased
200
Low dose rate, unbiased
Low dose rate, biased
100
0
-100
-200
-300
-400
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 21: HS-26CT31RH differential output voltage match, channel C, as a function of total dose irradiation at low and
high dose rate for the unbiased and biased cases. The post-irradiation SMD limits are -400mV to +400mV.
Differential output voltage match, Ch D, mV
400
High dose rate, unbiased
300
High dose rate, biased
200
Low dose rate, unbiased
Low dose rate, biased
100
0
-100
-200
-300
-400
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 22: HS-26CT31RH differential output voltage match, channel D, as a function of total dose irradiation at low and
high dose rate for the unbiased and biased cases. The post-irradiation SMD limits are -400mV to +400mV.
14
Common mode output voltage, VOS, Ch A, V
3
2.5
2
1.5
High dose rate, unbiased
1
High dose rate, biased
Low dose rate, unbiased
0.5
Low dose rate, biased
0
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 23: HS-26CT31RH common mode output voltage, VOS, channel A, as a function of total dose irradiation at low
and high dose rate for the unbiased and biased cases. The post-irradiation SMD limit is 3V maximum.
Common mode output voltage, VOS, Ch B, V
3
2.5
2
1.5
High dose rate, unbiased
1
High dose rate, biased
Low dose rate, unbiased
0.5
Low dose rate, biased
0
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 24: HS-26CT31RH common mode output voltage, VOS, channel B, as a function of total dose irradiation at low
and high dose rate for the unbiased and biased cases. The post-irradiation SMD limit is 3V maximum.
15
Common mode output voltage, VOS, Ch C, V
3
2.5
2
1.5
High dose rate, unbiased
1
High dose rate, biased
Low dose rate, unbiased
0.5
Low dose rate, biased
0
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 25: HS-26CT31RH common mode output voltage, VOS, channel C, as a function of total dose irradiation at low
and high dose rate for the unbiased and biased cases. The post-irradiation SMD limit is 3V maximum.
Common mode voltage, VOS, Ch D, V
3
2.5
2
1.5
High dose rate, unbiased
1
High dose rate, biased
Low dose rate, unbiased
0.5
Low dose rate, biased
0
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 26: HS-26CT31RH common mode output voltage, VOS, channel D, as a function of total dose irradiation at low
and high dose rate for the unbiased and biased cases. The post-irradiation SMD limit is 3V maximum.
16
Common mode output voltage, VOS(bar), Ch A, V
3
2.5
2
1.5
High dose rate, unbiased
1
High dose rate, biased
Low dose rate, unbiased
0.5
Low dose rate, biased
0
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 27: HS-26CT31RH common mode output voltage, VOS(bar), channel A, as a function of total dose irradiation at
low and high dose rate for the unbiased and biased cases. The post-irradiation SMD limit is 3V maximum.
Common mode output voltage, VOS(bar), Ch B, V
3
2.5
2
1.5
High dose rate, unbiased
1
High dose rate, biased
Low dose rate, unbiased
0.5
Low dose rate, biased
0
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 28: HS-26CT31RH common mode output voltage, VOS(bar), channel B, as a function of total dose irradiation at
low and high dose rate for the unbiased and biased cases. The post-irradiation SMD limit is 3V maximum.
17
Common mode output voltage, VOS(bar), Ch C, V
3
2.5
2
1.5
High dose rate, unbiased
1
High dose rate, biased
Low dose rate, unbiased
0.5
Low dose rate, biased
0
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 29: HS-26CT31RH common mode output voltage, VOS(bar), channel C, as a function of total dose irradiation at
low and high dose rate for the unbiased and biased cases. The post-irradiation SMD limit is 3V maximum.
Common mode output voltage, VOS(bar), Ch D, V
3
2.5
2
1.5
High dose rate, unbiased
1
High dose rate, biased
Low dose rate, unbiased
0.5
Low dose rate, biased
0
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 30: HS-26CT31RH common mode output voltage, VOS(bar), channel D, as a function of total dose irradiation at
low and high dose rate for the unbiased and biased cases. The post-irradiation SMD limit is 3V maximum.
18
Common mode output match, Ch A, mV
400
300
200
100
0
-100
High dose rate, unbiased
-200
High dose rate, biased
Low dose rate, unbiased
-300
Low dose rate, biased
-400
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 31: HS-26CT31RH common mode output voltage match, channel A, as a function of total dose irradiation at low
and high dose rate for the unbiased and biased cases. The post-irradiation SMD limits are -400mV to +400mV.
Common mode output match, Ch B, mV
400
300
200
100
0
-100
High dose rate, unbiased
-200
High dose rate, biased
Low dose rate, unbiased
-300
Low dose rate, biased
-400
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 32: HS-26CT31RH common mode output voltage match, channel B, as a function of total dose irradiation at low
and high dose rate for the unbiased and biased cases. The post-irradiation SMD limits are -400mV to +400mV.
19
Common mode output match, Ch C, mV
400
High dose rate, unbiased
300
High dose rate, biased
200
Low dose rate, unbiased
Low dose rate, biased
100
0
-100
-200
-300
-400
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 33: HS-26CT31RH common mode output voltage match, channel C, as a function of total dose irradiation at low
and high dose rate for the unbiased and biased cases. The post-irradiation SMD limits are -400mV to +400mV.
Common mode output match, Ch D, mV
400
300
200
100
0
-100
High dose rate, unbiased
High dose rate, biased
-200
Low dose rate, unbiased
-300
Low dose rate, biased
-400
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 34: HS-26CT31RH common mode output voltage match, channel D, as a function of total dose irradiation at low
and high dose rate for the unbiased and biased cases. The post-irradiation SMD limits are -400mV to +400mV.
20
Standby supply current, input=VDD, µA
500
450
High dose rate, unbiased
High dose rate, biased
400
Low dose rate, unbiased
350
Low dose rate, biased
300
250
200
150
100
50
0
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 35: HS-26CT31RH standby supply current, input at VDD, as a function of total dose irradiation at low and high
dose rate for the unbiased and biased cases. The post-irradiation SMD limit is 500µA maximum.
Standby supply current, input=GND, µA
500
450
High dose rate, unbiased
High dose rate, biased
400
Low dose rate, unbiased
350
Low dose rate, biased
300
250
200
150
100
50
0
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 36: HS-26CT31RH standby supply current, input at ground, as a function of total dose irradiation at low and high
dose rate for the unbiased and biased cases. The post-irradiation SMD limit is 500µA maximum.
21
Tri-state output leakage, 0V, Ch A, µA
5
High dose rate, unbiased
4
High dose rate, biased
3
Low dose rate, unbiased
2
Low dose rate, biased
1
0
-1
-2
-3
-4
-5
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 37: HS-26CT31RH tri-state output leakage current at 0V, channel A, as a function of total dose irradiation at low
and high dose rate for the unbiased and biased cases. The post-irradiation SMD limits are -5µA to 5µA. Channels B, C
and D and complementary output channels A, B, C and D showed identical results.
Tri-state output leakage, 5.5V, ch A, µA
5
High dose rate, unbiased
4
High dose rate, biased
3
Low dose rate, unbiased
2
Low dose rate, biased
1
0
-1
-2
-3
-4
-5
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 38: HS-26CT31RH tri-state output leakage current at 5.5V, channel A, as a function of total dose irradiation at
low and high dose rate for the unbiased and biased cases. The post-irradiation SMD limits are -5µA to 5µA. Channels B,
C and D and complementary output channels A, B, C and D showed identical results.
22
Delta supply current, VDD=5.5V, mA
2.00
1.80
High dose rate, unbiased
1.60
High dose rate, biased
Low dose rate, unbiased
1.40
Low dose rate, biased
1.20
1.00
0.80
0.60
0.40
0.20
0.00
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 39: HS-26CT31RH delta supply current, Vin from 2.4V to 0.5V, as a function of total dose irradiation at low and
high dose rate for the unbiased and biased cases. The post-irradiation SMD limit is 2mA maximum.
1000
High dose rate, unbiased
Input leakage, channel A, nA
800
High dose rate, biased
600
Low dose rate, unbiased
400
Low dose rate, biased
200
0
-200
-400
-600
-800
-1000
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 40: HS-26CT31RH input leakage, channel A, as a function of total dose irradiation at low and high dose rate for
the unbiased and biased cases. The post-irradiation SMD limits are -1000nA to +1000nA.
23
1000
800
High dose rate, unbiased
High dose rate, biased
Enable input leakage, nA
600
Low dose rate, unbiased
400
Low dose rate, biased
200
0
-200
-400
-600
-800
-1000
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 41: HS-26CT31RH input leakage, enable pin, as a function of total dose irradiation at low and high dose rate for
the unbiased and biased cases. The post-irradiation SMD limits are -1000nA to +1000nA.
Output leakage current, power off, Ch A, µA
100
80
High dose rate, unbiased
60
High dose rate, biased
Low dose rate, unbiased
40
Low dose rate, biased
20
0
-20
-40
-60
-80
-100
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 42: HS-26CT31RH output leakage current, power OFF, channel A, as a function of total dose irradiation at low
and high dose rate for the unbiased and biased cases. The post-irradiation SMD limits are -100µA to +100µA. Channels
B, C and D and complementary output channels A, B, C and D showed identical results.
24
Input clamp voltage, +1mA, ch A, mV
1400
High dose rate, unbiased
High dose rate, biased
1200
Low dose rate, unbiased
1000
Low dose rate, biased
800
600
400
200
0
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 43: HS-26CT31RH input clamp voltage, +1mA, channel A, as a function of total dose irradiation at low and high
dose rate for the unbiased and biased cases. The post-irradiation SMD limit is +1500mV maximum. Channels B, C and
D and complementary output channels A, B, C and D showed identical results.
-100
Input clamp voltage, -1mA, ch A, mV
High dose rate, unbiased
High dose rate, biased
-300
Low dose rate, unbiased
-500
Low dose rate, biased
-700
-900
-1100
-1300
-1500
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 44: HS-26CT31RH input clamp voltage, -1mA, channel A, as a function of total dose irradiation at low and high
dose rate for the unbiased and biased cases. The post-irradiation SMD limit is -1500mV maximum. Channels B, C and D
and complementary output channels A, B, C and D showed identical results.
25
6: Conclusion
This document reports results of a total dose test of the HS-26CT31RH quad differential line
driver. Parts were tested at low and high dose rate under biased and unbiased conditions as
outlined in MIL-STD-883 Test Method 1019.7, to a maximum total dose of 150krad(Si).
Testing at both dose rates to 150krad(Si) of the HS-26CT31RH is complete and showed no
reject devices after irradiation to 150krad(Si), screening to the SMD pre- and post-irradiation limits.
The part is considered ELDRS-free up to 150krad(Si). No bias sensitivity was noted.
7: Appendices
7.1: Reported parameters.
Figure
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
Parameter
High level output voltage
High level output voltage
High level output voltage
High level output voltage
Low level output voltage
Low level output voltage
Low level output voltage
Low level output voltage
Differential output voltage, VT
Differential output voltage, VT
Differential output voltage, VT
Differential output voltage, VT
Differential output voltage, VT(bar)
Differential output voltage, VT(bar)
Differential output voltage, VT(bar)
Differential output voltage, VT(bar)
Differential output voltage match
Differential output voltage match
Differential output voltage match
Differential output voltage match
Common mode output voltage, VT
Common mode output voltage, VT
Common mode output voltage, VT
Common mode output voltage, VT
CM output voltage, VT(bar)
CM output voltage, VT(bar)
CM output voltage, VT(bar)
CM output voltage, VT(bar)
Limit,
low
Limit, high
Units
0.5
0.5
0.5
0.5
V
V
V
V
V
V
V
V
+400
+400
+400
+400
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
mV
mV
mV
mV
V
V
V
V
V
V
V
V
2.5
2.5
2.5
2.5
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
-400
-400
-400
-400
26
Notes
Channel A
Channel B
Channel C
Channel D
Channel A
Channel B
Channel C
Channel D
Channel A
Channel B
Channel C
Channel D
Channel A
Channel B
Channel C
Channel D
Channel A
Channel B
Channel C
Channel D
Channel A
Channel B
Channel C
Channel D
Channel A
Channel B
Channel C
Channel D
31
32
33
34
35
36
37
38
39
40
41
42
43
44
CM output voltage match
CM output voltage match
CM output voltage match
CM output voltage match
Standby supply current
Standby supply current
Tri-state output leakage
Tri-state output leakage
Delta supply current
Input leakage, Channel A
Input leakage, ENABLE
Output leakage, power off
Input clamp voltage
Input clamp voltage
-100
400
400
400
400
500
500
5.0
5.0
2.0
1.0
1.0
+100
+1.5
-1.5
mV
mV
mV
mV
µA
µA
µA
µA
mA
µA
µA
µA
V
V
Channel A
Channel B
Channel C
Channel D
Vin = VDD
Vin = GND
0V
5.5V
0.5V to 2.4V
+1.0mA
-1.0mA
Note 1: Limits are taken from Standard Microcircuit Drawing (SMD) 5962-95632.
8: Document revision history
Revision Date
0
4 August 2010
Pages
All
Comments
Original issue
27
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