an1677

Application Note 1677
Authors: Oscar Mansilla, Richard Hood, Lawrence Pearce, Eric Thomson and Nick Vanvonno
Single Event Effects Testing of the ISL70218SRH, Dual
36V Rad Hard Low Power Operation Amplifiers
Introduction
SEE Test Objective
The intense heavy ion environment encountered in space
applications can cause a variety of transient and destructive
effects in analog circuits, including single-event latch-up (SEL),
single-event transients (SET) and single-event burnout (SEB).
These effects can lead to system-level failures including
disruption and permanent damage. For a predictable and
reliable system operation, these components have to be
formally designed and fabricated for SEE hardness. Then
followed by a detailed SEE testing to validate the design. This
report discusses the results of SEE testing of Intersil’s
ISL70218SRH.
The objectives of SEE testing on the ISL70218SRH were to
evaluate its susceptibility to single event latch-up and single
event burnout and characterize its SET behavior over various
LET levels.
Reference Documents
SEE Test Facility
Testing was performed at the Texas A&M University (TAMU)
Cyclotron Institute heavy ion facility. This facility is coupled to a
K500 super-conducting cyclotron, which is capable of
generating a wide range of test particles with the various
energy, flux and fluence levels needed for advanced radiation
testing.
• ISL70218SRH Data Sheet, FN7871
SEE Test Procedure
Product Description
The part was tested for single event latch-up and burnout,
using Au ions (LET = 86.4MeV/mg/cm2) and single event
transient using Ne, Ar, and Kr ions.
The ISL70218SRH is a dual, low-power precision amplifier
optimized for single-supply applications. This op amp features
a common mode input voltage range extending to 0.5V below
the V- rail, a rail-to-rail differential input voltage range, and
rail-to-rail output voltage swing, which makes it ideal for
single-supply applications where input operation at ground is
important.
The ISL70218SRH is implemented in an advanced bonded
wafer SOI process using deep trench isolation, resulting in a
fully isolated structure. This choice of process technology also
results in latch-up free performance, whether electrically or
single-event (SEL) caused.
This amplifier is designed to operate over a single supply range
of 3V to 36V or a split supply voltage range of +1.8V/-1.2V to
±18V. The combination of precision and small footprint
provides the user with outstanding value and flexibility relative
to similar competitive parts.
Applications for these amplifiers include precision active
filters, low noise front ends, loop filters, data acquisition and
charge amplifiers. The part is packaged in a 10 Ld Hermetic
Ceramic Flat Pack and operates over the extended
temperature range of -55°C to +125°C. A summary of key full
temperature range specifications follows:
The device under test (DUT) was mounted in the beam line and
irradiated with heavy ions of the appropriate species. The parts
were assembled in 10 lead dual in-line packages with the
metal lid removed for beam exposure. The beam was directed
onto the exposed die and the beam flux, beam fluence and
errors in the device outputs were measured.
The tests were controlled remotely from the control room. All
input power was supplied from portable power supplies
connected via cable to the DUT. The supply currents were
monitored along with the device outputs. All currents were
measured with digital ammeters, while all the output
waveforms were monitored on a digital oscilloscope for ease
of identifying the different types of SEE, which the part
displayed. Events were captured by triggering on changes in
the output.
SEE Test Set-Up Diagrams
A schematic of the evaluation board is shown in Figure 1.
RF
RIN-
IN-
IN-
-
10k
RIN+
IN+
• Input Offset Voltage . . . . . . . . . . . . . . . . . . . . . . . 290µV, max.
+
IN -
IN +
VCM
VREF
IN+
+
ISL70218SRH (1/2)
100k
VP
V+
0
VOUT
VVM
10k
RREF+
100k
• Offset Voltage Drift . . . . . . . . . . . . . . . . . . . . . . . 1µV/°C, max.
• Input Offset Current . . . . . . . . . . . . . . . . . . . . . . . . 75nA, max.
• Input Bias Current . . . . . . . . . . . . . . . . . . . . . . . . . 800nA, max.
• Supply Current/Amplifier . . . . . . . . . . . . . . . . . . . 1.4mA, max.
VREF
GND
FIGURE 1. SIMPLIFIED SEE SCHEMATIC
• Gain Bandwidth Product . . . . . . . . . . . . . . . . . . . . . 4MHz, typ.
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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Application Note 1677
Each operational amplifier was set up in a non-inverting
operation with G = 11V/V. The IN- inputs were grounded and the
input signal was applied to the IN+ pin.
Cross-section Calculation
Cross sections are calculated as shown by Equation 1:
(EQ. 1)
CS (LET) = N/F
where:
• CS is the SET cross section (cm²), expressed as a function of
the heavy ion LET
• LET is the linear energy transfer in MeV.cm²/mg, corrected
according to the incident angle, if any.
Single Event Transient Testing
Test Method
Biasing used for SET test runs was VS = ±4.5V and ± 18V. Similar
to SEL/B testing, a DC voltage of 200mV was applied to the
non-inverting inputs of the amplifiers. Signals from the switch
board in the control room were connected to two LECROY
oscilloscopes: one set to capture transients due to the output of
channel A and the other to capture transients on the output of
channel B.
SET events are recorded when movement on output during beam
exposure exceeds the set window trigger of ±80mV. Summary of
the scope settings are:
a. Scope 1 is set to trigger on Channel 1 to a OUTA window of
±80mV. Measurements on Scope 1 are:
CH1 = OUTA 200mV/div, CH2 = OUTA 500mV/div,
CH3 = OUTB 200mV/div, CH4 = OUT5 500mV/div.
• N is the total number of SET events
• F is fluence in particles/cm², corrected according to the
incident angle, if any.
b. Scope 2 is set to trigger on Channel 3 to a OUTB window of
±80mV. Measurements on Scope 1 are:
CH1 = OUTA 200mV/div, CH2 = OUTA 500mV/div,
CH3 = OUTB 200mV/div, CH4 = OUT5 500mV/div.
A value of 1/F is the assumed cross section when no event is
observed.
Single Event Latch-up and Burnout
Results
The first testing sequence looked at destructive effects due to
burnout or latch-up. A burnout condition is indicated by a
permanent change in the device supply current after application
of the beam. If the increased current is reset by cycling power, it
is termed a latch-up. No burnout or latch-up was observed using
Au ions (LET = 86.4MeV · cm2/mg) at 0° incidence from the
perpendicular. Testing was performed on four parts at +125°C
(case temperature) and up to the maximum voltage,
VS = ±18.2V. The first two parts (part ID 1&2) commenced
testing with VS = ±15V and on subsequent tests VS voltage was
increased to ±17.5V and then ±18.2V. All other parts were tested
with a VS of ±17.5V and ±18.2V. All test runs were run to a
fluence of 2x106/cm2. A power supply applied a DC voltage of
200mV to the non-inverting inputs of the amplifiers during the
test. Functionality of all outputs was verified after exposure. IDD
and IEE was recorded pre and post exposure, with 5% resolution.
Results are shown in Table 1 for the 36.4V total supply voltage.
The switch board at the end of the 20-ft cabling was found to
require terminations of 10nF to keep the noise on the waveforms
to a minimum.
Cross Section Results
Compared to other Intersil radiation tolerant circuits, the
ISL70218SRH was not designed for single event transient
mitigation. The best approach to characterize the single event
transient response is to represent the data on a LET threshold
plot.
Figure 2 shows the cross section of the IC versus the LET level, at
VS = ±4.5V and ± 18V. It can be seen that for an LET < 20MeV·
cm2/mg, the cross section is nearly the same independent of
supply voltage. As the linear energy transfer increases, there is
noticeable increases in cross section area with a higher supply
voltage. Data from Figure 2 is represented in Table 2.
Figures 3 through 6 show the cross section of each channel
independently at VS = ±4.5V and ± 18V with confidence interval
bars for a 90% confidence level.
TABLE 1. ISL70218SRH DETAILS OF SEB/L TESTS FOR VS = ±18.2V and LET = 86.4MeV · cm2/mg
TEMP
(°C)
+125
+125
+125
+125
LET
(MeV.cm^2/mg)
86
86
86
86
SUPPLY
CURRENT
PREEXPOSURE
(mA)
3.8
3.8
4.0
3.8
SUPPLY
CURRENT
POSTEXPOSURE
(mA)
LATCH EVENTS
CUMULATIVE
FLUENCE
(PARTICLES/cm2)
CUMULATIVE
CROSS
SECTION
(cm2)
DEVICE
SEB/L
0
2.0 x 106
5.0 x 10-7
1
PASS
0
2.0 x 106
5.0 x 10-7
2
PASS
0
2.0 x 106
5.0 x 10-7
3
PASS
3.7
0
2.0 x 106
5.0 x 10-7
4
PASS
TOTAL EVENTS
0
3.7
3.8
3.9
OVERALL FLUENCE
8.0 x 106
OVERALL CS
1.25 x 10-7
TOTAL UNITS
2
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Application Note 1677
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FIGURE 2. CROSS SECTION OF THE ISL70218SRH vs LINEAR ENERGY TRANSFER VS. SUPPLY VOLTAGE
TABLE 2. DETAILS OF THE CROSS SECTION OF THE ISL70218SRH vs LET vs SUPPLY VOLTAGE
SUPPLY
VOLTAGE (V)
ION
ANGLE
(°)
EFF LET
(cm2/mg)
FLUENCE PER RUN
(PARTICLES/cm2)
NUMBER OF RUNS
TOTAL EVENTS
EVENT CS cm^2
±4.5V
Ne
0
2.7
2.0 x 106
4
13
1.63 x 10-6
±4.5V
Ar
0
8
2.0 x 106
3
53
8.83 x 10-6
4
391
4.89 x 10-5
±4.5V
Ar
60
17
2.0 x 106
±4.5V
Kr
0
28
2.0 x 106
4
1097
1.37 x 10-4
±4.5V
Kr
60
56
2.0 x 106
4
1579
1.97 x 10-4
±18V
Ne
0
2.7
2.0 x 106
4
25
3.13 x 10-6
±18V
Ne
60
5.4
2.0 x 106
4
148
1.85 x 10-6
±18V
Ar
0
8
2.0 x 106
4
123
1.54 x 10-6
±18V
Ar
60
17
2.0 x 106
4
390
4.88 x 10-5
4
1655
2.07 x 10-4
4
3410
4.26 x 10-4
±18V
Kr
0
28
2.0 x 106
±18V
Kr
60
56
2.0 x 106
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Application Note 1677
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FIGURE 3. CHANNEL A CROSS SECTION VS. LET FOR V S = ±4.5V
WITH 90% CONFIDENCE LEVEL INTERVAL BARS
ϰϬ
ϱϬ
ϲϬ
FIGURE 4. CHANNEL B CROSS SECTION VS. LET FOR V S = ±4.5V
WITH 90% CONFIDENCE LEVEL INTERVAL BARS
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FIGURE 5. CHANNEL A CROSS SECTION VS. LET FOR V S = ±18V
WITH 90% CONFIDENCE LEVEL INTERVAL BARS
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FIGURE 6. CHANNEL B CROSS SECTION VS. LET FOR V S = ±18V
WITH 90% CONFIDENCE LEVEL INTERVAL BARS
Transient Response
The ISL70218SRH features rail to rail output, as such, it was
expected SETs would cause the output to rail out. Surprisingly the
majority of the transients were less than 10% of output voltage.
Duration of the transients range in the 10’s of µs to 100’s of µs.
Figures 7 though 28 represent output waveforms of the
amplifiers under test at various bias conditions and LET values.
The plots are composites of the first 25 transients captured on
the scope. This information is useful in quantifying the excursion
of the output as a result of SEE induced transients. Worst voltage
transient seen is a 300mV excursion and longest SET duration is
1.6ms (see Figure 19).
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Application Note 1677
Typical SET Captures
FIGURE 7. TYPICAL CAPTURE AT VS = ±4.5V, CHANNEL A,
LET = 2.7MeV/mg/cm2, RUN 432
FIGURE 8. TYPICAL CAPTURE AT VS = ±4.5V, CHANNEL B,
LET = 2.7MeV/mg/cm2, RUN 430
FIGURE 9. TYPICAL CAPTURE AT VS = ±18V, CHANNEL B,
LET = 2.7MeV/mg/cm2, RUN 429
FIGURE 10. TYPICAL CAPTURE AT VS = ±18V, CHANNEL A,
LET = 2.7MeV/mg/cm2, RUN 433
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Application Note 1677
Typical SET Captures (Continued)
FIGURE 11. TYPICAL CAPTURE AT VS = ±18V, CHANNEL A,
LET = 5.6MeV/mg/cm2, RUN 431
FIGURE 12. TYPICAL CAPTURE AT VS = ±18V, CHANNEL B,
LET = 5.6MeV/mg/cm2, RUN 432
FIGURE 13. TYPICAL CAPTURE AT VS = ±4.5V, CHANNEL A,
LET = 8.5MeV/mg/cm2, RUN 405
FIGURE 14. TYPICAL CAPTURE AT VS = ±4.5V, CHANNEL B,
LET = 8.5MeV/mg/cm2, RUN 405
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Application Note 1677
Typical SET Captures (Continued)
FIGURE 15. TYPICAL CAPTURE AT VS = ±18V, CHANNEL A,
LET = 8.5MeV/mg/cm2, RUN 406
FIGURE 16. TYPICAL CAPTURE AT VS = ±18V, CHANNEL B,
LET = 8.5MeV/mg/cm2, RUN 406
FIGURE 17. TYPICAL CAPTURE AT VS = ±4.5V, CHANNEL A,
LET = 17MeV/mg/cm2, RUN 403
FIGURE 18. TYPICAL CAPTURE AT VS = ±4.5V, CHANNEL B,
LET = 17MeV/mg/cm2, RUN 403
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Application Note 1677
Typical SET Captures (Continued)
FIGURE 19. TYPICAL CAPTURE AT VS = ±18V, CHANNEL A,
LET = 17MeV/mg/cm2, RUN 404
FIGURE 20. TYPICAL CAPTURE AT VS = ±18V, CHANNEL B,
LET = 17MeV/mg/cm2, RUN 404
FIGURE 21. TYPICAL CAPTURE AT VS = ±4.5V, CHANNEL A,
LET = 28MeV/mg/cm2, RUN 511
FIGURE 22. TYPICAL CAPTURE AT VS = ±4.5V, CHANNEL B,
LET = 28MeV/mg/cm2, RUN 511
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Application Note 1677
Typical SET Captures (Continued)
FIGURE 23. TYPICAL CAPTURE AT VS = ±18V, CHANNEL A,
LET = 28MeV/mg/cm2, RUN 512
FIGURE 24. TYPICAL CAPTURE AT VS = ±18V, CHANNEL B,
LET = 28MeV/mg/cm2, RUN 512
FIGURE 25. TYPICAL CAPTURE AT VS = ±4.5V, CHANNEL A,
LET = 56MeV/mg/cm2, RUN 513
FIGURE 26. TYPICAL CAPTURE AT VS = ±4.5V, CHANNEL B,
LET = 56MeV/mg/cm2, RUN 513
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Application Note 1677
Typical SET Captures (Continued)
FIGURE 27. TYPICAL CAPTURE AT VS = ±18V, CHANNEL A,
LET = 56MeV/mg/cm2, RUN 514
FIGURE 28. TYPICAL CAPTURE AT VS = ±18V, CHANNEL B,
LET = 56MeV/mg/cm2, RUN 514
Summary
Single Event Transient
Single Event Burnout/Latch-up
Based on the results presented, the ISL70218SRH op amp offers
advantages over the competitor’s part with respect to maximum
SET output voltage excursion. No transient pulses > 0.5V were
observed at LET levels up to MeV · cm2/mg. Both the voltage
level and duration of transients were proportional to LET. The
maximum transients at an LET of 56 MeV · cm2/mg were
observed to be ~ 300mV with a typical duration no > 200µs (see
Figure 27). The longest transient duration observed was at an
LET of 17 MeV · cm2/mg with an out of scale transient > 300mV
and length of the transient was > 1.6ms.
No single event burnout (SEB) was observed for the device up to
an LET value of MeV · cm2/mg (+125°C) and voltage supply of
VS = ± 18.2V. No single event latch-up (SEL) were observed for
the device up to an LET value of MeV · cm2/mg (+125°C). voltage
supply of VS = ± 18.2V.
Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is
cautioned to verify that the Application Note or Technical Brief is current before proceeding.
For information regarding Intersil Corporation and its products, see www.intersil.com
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