DATASHEET

[ /Title
(HS26C31
RH)
/Subje
ct
(Radia
tion
Harde
ned
Quad
Differe
ntial
Line
Driver)
/Autho
r ()
/Keyw
ords
(Inters
il
Corpo
ration,
semic
onduc
tor,
Radiat
ion
Harde
ned,
RH,
Rad
Hard,
QML,
Satellit
e,
SMD,
Class
V,
Data
HS-26C31RH-T
®
Data Sheet
August 1, 2008
Radiation Hardened Quad Differential Line
Driver
Intersil’s Satellite Applications Flow™ (SAF) devices are fully
tested and guaranteed to 100kRAD total dose. These QML
Class T devices are processed to a standard flow intended
to meet the cost and shorter lead-time needs of large volume
satellite manufacturers, while maintaining a high level of
reliability.
FN4591.2
Features
• QML Class T, Per MIL-PRF-38535
• Radiation Performance
- Gamma Dose . . . . . . . . . . . . . . . . . . . . 1 x 105 RAD(Si)
- SEU and SEL . . . . . . . . . . Immune to 100MeV/mg/cm2
• EIA RS-422 Compatible Outputs (Except for IOS)
• CMOS Compatible Inputs
The Intersil HS-26C31RH-T is a Quad Differential Line
Driver designed for digital data transmission over balanced
lines and meets the requirements of EIA Standard RS-422.
Radiation Hardened CMOS processing assures low power
consumption, high speed, and reliable operation in the most
severe radiation environments.
• High Impedance Outputs when Disabled or Powered
Down
The HS-26C31RH-T accepts CMOS inputs and converts
them to RS-422 compatible outputs. This circuit uses special
outputs that enable the drivers to power-down without
loading down the bus. Enable and disable pins allow several
devices to be connected to the same data source and
addressed independently.
• Full -55°C to +125°C Military Temperature Range
• Low Power Dissipation 2.75mW Standby (Max)
• Single 5V Supply
• Low Output Impedance 10Ω or Less
Applications
• Line Transmitter for MIL-STD-1553 Serial Data Bus
Specifications
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
Detailed Electrical Specifications for the HS-1840ARH-T
are contained in SMD 5962-96663. A “hot-link” is provided
from our website for downloading.
www.intersil.com/military/
Intersil’s Quality Management Plan (QM Plan), listing all
Class T screening operations, is also available on our
website.
http://rel.intersil.com/reports/search.php
Ordering Information
ORDERING
NUMBER
INTERNAL
MKT. NUMBER
PART MARKING #
TEMP. RANGE
(°C)
PACKAGE
PKG.
DWG. #
5962R9666301TEC
HS1-26C31RH-T
Q 5962R96 66301TEC
-55 to +125
16 LD SBDIP
D16.3
HS1-26C31RH/PROTO
HS1-26C31RH/PROTO
HSI - 26C31RH/PROTO
-55 to +125
16 LD SBDIP
D16.3
5962R9666301TXC
HS9-26C31RH-T
Q 5962R96 63201TEC
-55 to +125
16 LD FLATPACK
K16.A
HS9-26C31RH/PROTO
HS9-26C31RH/PROTO
HS9 - 26C31RH/PROTO
-55 to +125
16 LD FLATPACK
K16.A
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2000, 2008. All Rights Reserved
Satellite Applications Flow™ (SAF) is a trademark of Intersil Corporation. All other trademarks mentioned are the property of their respective owners.
HS-26C31RH-T
Pinouts
HS1-26C31RH-T
(16 LD SBDIP), CDIP-T16
TOP VIEW
HS9-26C31RH-T
(16 LD FLATPACK), CDFP4-F16
TOP VIEW
AIN 1
16 VDD
AO 2
15 DIN
AO 3
14 DO
ENABLE 4
13 DO
AIN
1
16
VDD
AO
2
15
DIN
AO
3
14
DO
ENABLE
4
13
DO
BO 5
12 ENABLE
BO
5
12
ENABLE
BO 6
11 CO
BO
6
11
CO
BIN 7
10 CO
BIN
7
10
CO
9 CIN
GND
8
9
CIN
GND 8
Logic Diagram
ENABLE
ENABLE
DIN
CIN
BIN
AIN
DO DO
CO CO
BO BO
AO AO
TRUTH TABLE
INPUTS
OUTPUT
DEVICE
POWER
ON/OFF
ENABLE
ENABLE
IN
OUT
OUT
ON
0
1
X
HI-Z
HI-Z
ON
1
X
0
0
1
ON
X
0
0
0
1
ON
1
X
1
1
0
ON
X
0
1
1
0
OFF (0V)
X
X
X
HI-Z
HI-Z
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
2
FN4591.2
August 1, 2008
HS-26C31RH-T
Die Characteristics
BACKSIDE FINISH:
DIE DIMENSIONS:
Silicon
2450µm x 4950µm x 533µm ±25.4µm
(97 x 195 x 21mils ±1mil)
PASSIVATION:
METALLIZATION:
Type: SiO2
Thickness: 8kÅ ±1kÅ
M1: Mo/Tiw
Thickness: 5800Å
M2: Al/Si/Cu
Thickness: 10kÅ ±1kÅ
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm2
TRANSISTOR COUNT:
SUBSTRATE POTENTIAL:
285
Internally connected to VDD.
May be left floating.
PROCESS:
Radiation Hardened CMOS, AVLSI
Metallization Mask Layout
(15) DIN
(16) VDD
(16) VDD
(1) AIN
HS-26C31RH
AO (2)
(14) DO
AO (3)
(13) DO
(12) ENABLE
ENABLE (4)
3
CIN (9)
(10) CO
GND (8)
BO (6)
GND (8)
(11) CO
BIN (7)
BO (5)
FN4591.2
August 1, 2008
Similar pages