isl70227seh srh eldrs test report

Test Report 003
Total Dose Testing of the ISL70227SEH and
ISL70227SRH Radiation Hardened Dual Operational
Amplifier
Introduction
Part Description
This document reports the results of low and high dose rate total
dose testing of the ISL70227SEH dual operational amplifier.
The data for this report was obtained from wafer-by- wafer
acceptance testing results. Samples were irradiated at low dose
rate under bias and with all pins grounded and at high dose rate
under bias.
The ISL70227SEH is a precision dual operational amplifier
featuring very low noise, low offset voltage, low input bias current
and low temperature drift. These features plus its radiation
tolerance make the ISL70227SEH the ideal choice for
applications requiring both high DC accuracy and AC
performance. The combination of precision, low noise and small
footprint provides the user with outstanding value and flexibility
relative to similar competitive parts. Applications for these
amplifiers include precision and analytical instrumentation,
active filters and power supply controls. The ISL70227SEH is
available in a 10 Ld hermetic ceramic flatpack and operates
across the extended temperature range of -55°C to +125°C.
Constructed with Intersil's dielectrically isolated PR40 process,
this device is immune to single event latch-up. The ISL70227SEH
offers guaranteed performance across the full -55°C to +125°C
military temperature range. Key post-radiation specifications as
follows:
The ISL70227SEH is available in two versions differing in total
ionizing dose (TID) acceptance testing. The ISL70227SRH is
acceptance tested on a wafer-by-wafer basis to 100krad(Si) at
high dose rate (50 - 300rad(Si)/s) only. The ISL70227SEH is
acceptance tested on a wafer-by-wafer basis to 100krad(Si) at
both high dose rate (50 - 300rad(Si)/s) to 100krad(Si) and low
dose rate (0.01rad(Si)/s) to 50krad(Si). The “RH” and “EH”
devices are of the same design and silicon and differ in
screening flows only.
Reference Documents
• MIL-STD-883 test method 1019
• ISL70227SEH datasheet.
• Input offset voltage . . . . . . . . . . . . . . . . . . . . . . ±100μV maximum
• Input offset voltage TC . . . . . . . . . . . . . . . . . 1.0μV/°C maximum
• Input bias current . . . . . . . . . . . . . . . . . . . . . . . . ±25nA maximum
• ISL70227SRH datasheet.
• Standard Microcircuit Drawing (SMD) 5962-12223
• Input offset current . . . . . . . . . . . . . . . . . . . . . . . ±25nA maximum
• Quiescent supply current, each amplifier . . . . 2.7mA maximum
• Voltage noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2.5nV/Hz
• Supply voltage range . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 42V
• Operating temperature range . . . . . . . . . . . . . . - 55°C to +125°C
• Standard Microcircuit Drawing (SMD) . . . . . . . . . 5962-12223
• Test Description
Irradiation Facilities
High dose rate testing was performed at 65rad(Si)/s using a
Gamma cell 220 60Co irradiator located in the Palm Bay,
Florida Intersil facility. Low dose rate testing was performed at
0.01rad(Si)/s using the Intersil Palm Bay N40 panoramic 60Co
irradiator.
Test Fixturing
Figure 1 shows the configuration used for biased irradiation.
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Test Report 003
BIASED
UNBIASED
V+
V+
-
-
ISL70227SEH
VOUT
ISL70227SEH
+
VOUT
+
V-
V-
V+ = 15V;
V- =-15V;
V+ = GND;
V- = GND;
FIGURE 1. IRRADIATION BIAS CONFIGURATION FOR THE ISL70227SEH PER SMD 5962-12223. THE FIGURE SHOWN IS FOR THE ISL70244SEH;
THE ISL70227SEH CONFIGURATION IS IDENTICAL EXCEPT FOR ±18.0V SUPPLIES FOR THE BIASED CONFIGURATION.
Characterization Equipment and Procedures
All electrical testing was performed outside the irradiator using
production Automated Test Equipment (ATE) with data logging at
each downpoint. Downpoint electrical testing was performed at
room temperature.
Experimental Matrix
Total dose irradiation proceeded in accordance with the
guidelines of MIL-STD-883 Test Method 1019.7. The
experimental matrix consisted of eight samples irradiated at low
dose rate under bias, eight samples irradiated at low dose rate
with all pins grounded and sixteen samples irradiated at high
dose rate under bias.
Samples of the ISL70227SEH were drawn from production lot
WTM3XCAEH as part of routine wafer-by-wafer acceptance
testing and were packaged in the hermetic 10-pin solder-sealed
flatpack (CDFP4-F10) package. The samples were processed
through the standard burn in cycle before irradiation, as required
by MIL-STD-883 Method 1019 and were screened to the ATE
limits at room temperature prior to the test.
Downpoints
Downpoints for the low dose rate tests were zero and 50krad(Si).
Downpoints for the high dose rate test were zero and
100krad(Si). These downpoint schedules are routine for
production acceptance testing (as opposed to characterization
testing).
Results
TABLE 1. ISL70227SEH TOTAL DOSE TEST ATTRIBUTES DATA
PART NUMBER
DOSE RATE
(Note 1)
BIAS
SAMPLE SIZE
DOWNPOINT
PASS
(Note 2)
ISL70227SEH
LDR
Biased
8
Preirradiation
8
50krad(Si)
8
Preirradiation
8
50krad(Si)
8
Preirradiation
16
100krad(Si)
16
ISL70227SEH
ISL70227SEH
LDR
Grounded
HDR
Biased
8
16
REJECTS
0
0
0
NOTES:
1. “HDR” indicates high dose rate (50 to 300rad(Si)/s) as specified in MIL-STD-883 TM1019; the actual dose rate for these tests was 65rad(Si)/s. 'LDR'
indicates low dose rate (0.01rad(Si)/s), also as specified in TM1019.
2. “Pass” indicates a sample that passes all post-irradiation SMD limits.
Variables Data
The plots in Figure 2 through 20 show data at downpoints. The
plots show the median of key parameters as a function of low
and high dose rate total dose for each of the two irradiation
conditions. (refer to “Discussion and Conclusion” on page 12).
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Variables Data Plots
HIGH OUTPUT VOLTAGE (V)
14.0
13.8
13.6
13.4
13.2
LDR BIAS CH1
LDR GND CH1
HDR BIAS CH1
LDR BIAS CH2
LDR GND CH2
HDR BIAS CH2
SPEC LIMIT
13.0
0
50
100
TOTAL DOSE, krad(Si)
FIGURE 2. ISL70227SEH HIGH OUTPUT VOLTAGE, ±15V SUPPLIES, CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT LOW
DOSE RATE FOR THE BIASED (IN Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE BIASED
CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE IRRADIATION.
SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE CELL WAS 16.
THE POST-IRRADIATION SMD LIMIT IS 13.1V MINIMUM.
HIGH OUTPUT VOLTAGE (V)
-13.0
-13.2
-13.4
-13.6
-13.8
LDR BIAS CH1
LDR GND CH1
HDR BIAS CH1
LDR BIAS CH2
LDR GND CH2
HDR BIAS CH2
SPEC LIMIT
-14.0
0
50
100
TOTAL DOSE (krad(Si))
FIGURE 3. ISL70227SEH LOW OUTPUT VOLTAGE, ± 15V SUPPLIES, CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT LOW
DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE BIASED
CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE IRRADIATION.
SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE CELL WAS 16.
THE POST-IRRADIATION SMD LIMIT IS -13.1V MAXIMUM.
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Variables Data Plots (Continued)
INTPUT OFFSET VOLTAGE (µV)
150
100
50
0
-50
-100
-150
0
50
LDR BIAS CH1
LDR GND CH1
HDR BIAS CH1
LDR BIAS CH2
LDR GND CH2
HDR BIAS CH2
SPEC LIMIT
SPEC LIMIT
100
TOTAL DOSE krad(Si))
FIGURE 4. ISL70227SEH INPUT OFFSET VOLTAGE, ±15V SUPPLIES, CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT LOW
DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE BIASED
CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE IRRADIATION.
SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE CELL WAS 16.
THE POST-IRRADIATION SMD LIMIT IS ±100.0µV MAXIMUM.
POSITIVE INPUT BIAS CURRENT (nA)
30
20
10
0
-10
LDR BIAS CH1
LDR GND CH1
HDR BIAS CH1
LDR BIAS CH2
LDR GND CH2
HDR BIAS CH2
SPEC LIMIT
SPEC LIMIT
-20
-30
0
50
100
TOTAL DOSE (krad(Si))
FIGURE 5. ISL70227SEH POSITIVE INPUT BIAS CURRENT, ±15V SUPPLIES, CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT
LOW DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE
BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE
IRRADIATION. SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE
CELL WAS 16. THE POST-IRRADIATION SMD LIMIT IS ±25.0nA MAXIMUM.
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Variables Data Plots (Continued)
NEGATIVE INPUT BIAS CURRENT (nA)
30
20
10
0
-10
LDR BIAS CH1
LDR GND CH1
HDR BIAS CH1
LDR BIAS CH2
LDR GND CH2
HDR BIAS CH2
SPEC LIMIT
SPEC LIMIT
-20
-30
0
50
100
TOTAL DOSE (krad(Si))
FIGURE 6. ISL70227SEH NEGATIVE INPUT BIAS CURRENT, ±15V SUPPLIES, CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL DOSE IRRADIATION
AT LOW DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE
BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE
IRRADIATION. SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE
CELL WAS 16. THE POST-IRRADIATION LIMIT SMD IS ±25.0nA MAXIMUM.
INPUT OFFSET CURRENT (nA)
30
20
10
0
LDR BIAS CH1
LDR GND CH1
HDR BIAS CH1
LDR BIAS CH2
LDR GND CH2
-10
SPEC LIMIT
HDR BIAS CH2
SPEC LIMIT
-20
-30
0
50
100
TOTAL DOSE (krad(Si))
FIGURE 7. ISL70227SEH INPUT OFFSET CURRENT, ±15V SUPPLIES, CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT LOW
DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE BIASED
CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE IRRADIATION.
SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE CELL WAS 16.
THE POST-IRRADIATION SMD LIMIT IS ±25.0nA MAXIMUM.
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Variables Data Plots (Continued)
POSITIVE OPEN LOOP GAIN (dB)
80
70
60
LDR BIAS CH1
LDR GND CH1
HDR BIAS CH1
LDR BIAS CH2
LDR GND CH2
HDR BIAS CH2
SPEC LIMIT
50
0
50
100
TOTAL DOSE (krad(Si))
FIGURE 8. ISL70227SEH POSITIVE OPEN LOOP GAIN, ±15V SUPPLIES, CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT
LOW DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE
BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE
IRRADIATION. SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE
CELL WAS 16. THE POST-IRRADIATION SMD LIMIT IS 60.0dB MINIMUM.
NEGATIVE OPEN LOOP GAIN (dB)
80
70
LDR GND CH1
HDR BIAS CH1
LDR BIAS CH2
LDR GND CH2
HDR BIAS CH2
SPEC LIMIT
60
50
LDR BIAS CH1
0
50
100
TOTAL DOSE (krad(Si))
FIGURE 9. ISL70227SEH NEGATIVE OPEN LOOP GAIN, ±15V SUPPLIES, CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT
LOW DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE
BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE
IRRADIATION. SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE
CELL WAS 16. THE POST-IRRADIATION SMD LIMIT IS 60.0dB MINIMUM.
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Variables Data Plots (Continued)
POSITIVE PSRR (dB)
125
120
LDR BIAS CH1
115
LDR BIAS CH2
LDR GND CH2
HDR BIAS CH2
SPEC LIMIT
110
105
LDR GND CH1
HDR BIAS CH1
0
50
100
TOTAL DOSE (krad(Si))
FIGURE 10. ISL70227SEH POSITIVE POWER SUPPLY REJECTION RATIO, ±15V SUPPLIES, CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL DOSE
IRRADIATION AT LOW DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE
RATE FOR THE BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH
DOSE RATE IRRADIATION. SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH
DOSE RATE CELL WAS 16. THE POST-IRRADIATION SMD LIMIT IS 110.0dB MINIMUM.
NEGATIVE PSRR (dB)
125
120
115
LDR Bias Ch1
110
105
LDR GND CH1
HDR BIAS CH1
LDR BIAS CH2
LDR GND CH2
HDR BIAS CH2
SPEC LIMIT
0
50
100
TOTAL DOSE (krad(Si))
FIGURE 11. ISL70227SEH NEGATIVE POWER SUPPLY REJECTION RATIO, ±15V SUPPLIES, CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL DOSE
IRRADIATION AT LOW DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE
RATE FOR THE BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH
DOSE RATE IRRADIATION. SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH
DOSE RATE CELL WAS 16. THE POST-IRRADIATION SMD LIMIT IS 110.0dB MINIMUM.
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Variables Data Plots (Continued)
POSITIVE CMRR (dB)
180
160
140
120
LDR BIAS CH1
LDR GND CH1
HDR BIAS CH1
LDR BIAS CH2
LDR GND CH2
HDR BIAS CH2
SPEC LIMIT
100
0
50
TOTAL DOSE (krad(Si))
100
FIGURE 12. ISL70227SEH POSITIVE COMMON MODE REJECTION RATIO, ±15V SUPPLIES, CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL DOSE
IRRADIATION AT LOW DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE
RATE FOR THE BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH
DOSE RATE IRRADIATION. SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH
DOSE RATE CELL WAS 16. THE POST-IRRADIATION SMD LIMIT IS 115.0dB MINIMUM.
NAGATIVE CMRR (dB)
180
160
140
120
100
LDR BIAS CH1
LDR GND CH1
HDR BIAS CH1
LDR BIAS CH2
LDR GND CH2
HDR BIAS CH2
SPEC LIMIT
0
50
100
TOTAL DOSE (krad(Si))
FIGURE 13. ISL70227SEH NEGATIVE COMMON MODE REJECTION RATIO, ±15V SUPPLIES, CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL DOSE
IRRADIATION AT LOW DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE
RATE FOR THE BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH
DOSE RATE IRRADIATION. SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH
DOSE RATE CELL WAS 16. THE POST-IRRADIATION SMD LIMIT IS 115.0dB MINIMUM.
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OUTPUT SC CURRENT SOURCING (mA)
Variables Data Plots (Continued)
46
45
44
43
42
41
LDR BIAS CH1
LDR GND CH1
HDR BIAS CH1
LDR BIAS CH2
LDR GND CH2
HDR BIAS CH2
SPEC LIMIT
40
0
50
TOTAL DOSE (krad(Si))
100
FIGURE 14. ISL70227SEH OUTPUT CURRENT, SOURCING, ±15V SUPPLIES, CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT
LOW DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE
BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE
IRRADIATION. SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE
CELL WAS 16. THE PARAMETER IS NOT SPECIFIED IN THE SMD AND THE DATA IS SHOWN FOR INFORMATION ONLY; THE INTERNAL
POST-IRRADIATION LIMIT IS 45.0mA TYPICAL.
OUTPUT SC CURRENT SINKING (mA)
-40
-45
-50
-55
-60
LDR BIAS CH1
LDR GND CH1
HDR BIAS CH1
LDR BIAS CH2
LDR GND CH2
HDR BIAS CH2
SPEC LIMIT
0
50
TOTAL DOSE (krad(Si))
100
FIGURE 15. ISL70227SEH OUTPUT CURRENT, SINKING, ±15V SUPPLIES, CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT
LOW DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE
BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE
IRRADIATION. SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE
CELL WAS 16. THE PARAMETER IS NOT SPECIFIED IN THE SMD AND THE DATA IS SHOWN FOR INFORMATION ONLY; THE INTERNAL
POST-IRRADIATION LIMIT IS 45.0mA TYPICAL.
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Variables Data Plots (Continued)
10
SUPPLY CURRENT (mA)
8
6
4
2
0
-2
LDR BIAS CH1
-4
LDR GND CH1
HDR BIAS CH2
-6
HDR BIAS CH1
SPEC LIMIT
-8
LDR BIAS CH2
SPEC LIMIT
-10
0
50
LDR GND CH2
100
TOTAL DOSE (krad(Si))
FIGURE 16. ISL70227SEH POSITIVE AND NEGATIVE SUPPLY CURRENT, ±15V SUPPLIES, SUM OF CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL
DOSE IRRADIATION AT LOW DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH
DOSE RATE FOR THE BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR
HIGH DOSE RATE IRRADIATION. SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE
HIGH DOSE RATE CELL WAS 16. THE SMD POST-IRRADIATION LIMIT IS ±7.4mA MAXIMUM.
POSITIVE SLEW RATE (V/µs)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
LDR BIAS CH1
LDR GND CH1
HDR BIAS CH1
LDR BIAS CH2
LDR GND CH2
HDR BIAS CH2
SPEC LIMIT
0
50
100
TOTAL DOSE, (krad(Si))
FIGURE 17. ISL70227SEH POSITIVE SLEW RATE, CHANNELS 1 AND 2, ±15V SUPPLIES, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT LOW
DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE BIASED
CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE IRRADIATION.
SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE CELL WAS 16.
THE SMD POST-IRRADIATION LIMIT IS 2.0V/µs MINIMUM.
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Variables Data Plots (Continued)
NAGATIVE SLEW RATE (V/µs)
4.5
4.0
3.5
3.0
2.5
2.0
LDR BIAS CH1
LDR GND CH1
HDR BIAS CH1
LDR BIAS CH2
LDR GND CH2
HDR BIAS CH2
SPEC LIMIT
1.5
0
50
100
TOTAL DOSE (krad(Si))
FIGURE 18. ISL70227SEH NEGATIVE SLEW RATE, CHANNELS 1 AND 2, ±15V SUPPLIES, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT LOW
DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE BIASED
CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE IRRADIATION.
SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE CELL WAS 16.
THE SMD POST-IRRADIATION LIMIT IS 2.0V/µs MINIMUM.
120
RISE TIME (ns)
100
80
60
40
LDR BIAS CH1
LDR GND CH1
HDR BIAS CH1
LDR BIAS CH2
LDR GND CH2
HDR BIAS CH2
SPEC LIMIT
20
0
50
TOTAL DOSE (krad(Si))
100
FIGURE 19. ISL70227SEH RISE TIME, CHANNELS 1 AND 2, ±15V SUPPLIES, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT LOW DOSE RATE
FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE BIASED CASE. THE
DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE IRRADIATION. SAMPLE
SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE CELL WAS 16. THE SMD
POST-IRRADIATION LIMIT IS 100.0ns MAXIMUM.
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Variables Data Plots (Continued)
120
FALL TIME (ns)
100
80
60
40
20
LDR BIAS CH1
LDR GND CH1
HDR BIAS CH1
LDR BIAS CH2
LDR GND CH2
HDR BIAS CH2
SPEC LIMIT
0
50
TOTAL DOSE (krad(Si))
100
FIGURE 20. ISL70227SEH FALL TIME, CHANNELS 1 AND 2, ±15V SUPPLIES, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT LOW DOSE RATE
FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE BIASED CASE. THE
DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE IRRADIATION. SAMPLE
SIZE FOR THE LOW DOSE RATE CELLS WAS 2, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE CELL WAS 4. THE SMD
POST-IRRADIATION LIMIT IS 100.0ns MAXIMUM.
Discussion and Conclusion
This document reports the results of low and high dose rate total
dose testing of the ISL70227SEH dual operational amplifier. The
data for this report was obtained from wafer-by-wafer
acceptance testing results. Parts were tested at low dose rate
under biased and unbiased conditions and at high dose rate
under biased conditions as outlined in MIL-STD-883 Test Method
1019.7, at 0.01rad(Si)/s and 65rad(Si)/s respectively. The low
dose rate test was run to 50krad(Si) and the high dose rate was
run to 100krad(Si). All parameters showed good stability out to
the maximum total dose for each test and will be discussed
below.
The ISL70227SEH is available in two versions differing in total
ionizing dose (TID) acceptance testing. The ISL70227SRH is
acceptance tested on a wafer-by-wafer basis to 100krad(Si) at
high dose rate (50 to 300rad(Si)/s) only. The ISL70227SEH is
acceptance tested on a wafer-by-wafer basis to 100krad(Si) at
both high dose rate (50 to 300rad(Si)/s) to 100krad(Si) and low
dose rate (0.01rad(Si)/s) to 50krad(Si). The “RH” and “EH”
devices are of the same design and silicon and differ in screening
flows only.
The output HIGH and LOW voltages (Figures 2 and 3) were stable
over high dose rate irradiation. Note that this parameter provides
a measure of the amplifier's ability to swing close to the rail and
is not the LOW and HIGH voltage parameter seen in digital parts.
moderately low dose rate sensitive (see MIL-STD-883, TM1019,
section 3.13.1.1).
The positive and negative open-loop gain (Figures 8 and 9)
remained very stable at both dose rates.
The positive and negative power supply rejection ratio
(Figures 10 and 11) and the common mode rejection ratio
(Figures 12 and 13) were stable at both dose rates.
The sourcing and sinking output short-circuit current (Figures 14
and 15) and the positive and negative supply currents
(Figures 16) remained stable at both dose rates.
The positive and negative slew rates (Figures 17 and 18) were
stable, as were the rise time and fall time (Figures 19 and 20).
We conclude that the ISL70227SEH shows good performance to
the SMD total dose limits of 50krad(Si) at low dose rate and
100krad(Si) at high dose rate. The part shows moderate low dose
rate sensitivity in the input bias current parameters. No
differences in total dose response were noted between biased
and grounded low dose rate irradiation for any parameters.
Additionally, no channel-to-channel differences were noted,
either in the preirradiation data or in the total dose response of
the parts.
The input offset voltage, positive and negative input bias current
and input offset current (Figures 4 through 7) remained within the
SMD post-irradiation limits at both dose rates. The input offset
voltage and input offset current (Figures 4 and 7) were stable over
low and high dose rate irradiation but the positive and negative
bias current (Figures 5 and 6) showed an increase over low dose
rate while remaining well within the SMD post-irradiation limit of
25.0nA maximum. Hence the part must be considered
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Test Report 003
Appendix
TABLE 2. REPORTED PARAMETERS
FIGURE
PARAMETER
LIMIT LOW
LIMIT HIGH
UNITS
NOTES
2
Output HIGH Voltage
13.1
-
V
Channels 1 and 2
3
Output LOW Voltage
-
-13.1
V
Channels 1 and 2
4
Input Offset Voltage
-100.0
100.0
µV
Channels 1 and 2
5
Positive Input Bias Current
-25.0
25.0
nA
Channels 1 and 2
6
Negative Input Bias Current
-25.0
25.0
nA
Channels 1 and 2
7
Input Offset Current
-25.0
25.0
nA
Channels 1 and 2
8
Positive Open Loop Gain
60.0
-
dB
Channels 1 and 2
9
Negative Open Loop Gain
60.0
-
dB
Channels 1 and 2
10
Positive Power Supply Rejection Ratio
110.0
-
dB
Channels 1 and 2
11
Negative Power Supply Rejection Ratio
110.0
-
dB
Channels 1 and 2
12
Positive Common Mode Rejection Ratio
115.0
-
dB
Channels 1 and 2
13
Positive Common Mode Rejection Ratio
115.0
-
dB
Channels 1 and 2
14
Output Short Current, Sourcing
-
-
mA
Channels 1 and 2
15
Output Short Circuit Current, Sinking
-
-
mA
Channels 1 and 2
16
Positive and Negative Supply Current
7.4
-
mA
Sum of both channels
17
Positive Slew Rate
2.0
-
V/µs
Channels 1 and 2
18
Negative Slew Rate
2.0
-
V/µs
Channels 1 and 2
19
Positive Rise Time
100.0
-
ns
Channels 1 and 2
20
Negative Rise Time
100.0
-
ns
Channels 1 and 2
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