an1961

Application Note 1961
Single Event Effects (SEE) Testing of the ISL70244SEH,
Dual 40V Radiation Hardened Precision Operational
Amplifier
Introduction
SEE Test Facility
The intense proton and heavy ion environment encountered in
space applications can cause a variety of single event effects
in electronic circuitry, including single event upset (SEU), single
event transient (SET), single event functional Interrupt (SEFI),
and single event burnout (SEB). SEE can lead to system-level
performance issues including disruption, degradation and
destruction. For predictable and reliable space system
operation, individual electronic components should be
characterized to determine their SEE response. This report
discusses the results of SEE testing performed on the
ISL70244SEH dual operational amplifier.
Testing was performed at the Texas A&M University (TAMU)
Cyclotron Institute heavy ion facility. This facility is coupled to a
K500 super-conducting cyclotron, which is capable of
generating a wide range of particle beams with the various
energy, flux, and fluence levels needed for advanced radiation
testing.
Throughout this document, reference is made to linear energy
transfer (LET) and the units of this parameter is always
understood to be MeV•cm2/mg.
Product Description
The ISL70244SEH is a dual version of the ISL70444SEH quad
operational amplifier and is fabricated in Intersil’s PR40
precision bipolar analog process. The die has only two
operational amplifiers on it and is not the same die as the
ISL70444SEH, but the amplifier design is the same.
Product Documentation
For more information about the ISL70244SEH, refer to the
Related Documents shown below.
Related Documents
• ISL70444SEH Datasheet
SEE Test Set-up
SEE testing is carried out with the sample in an active mode
configuration. A schematic of the ISL70244SEH SEE test
fixture is shown in Figure 1. Four ISL70244SEH were mounted
on a board so as to allow simultaneous heavy ion irradiation of
all four units. For SEB, the sum of the four ISL70244SEH
supply currents were monitored before, during and after each
irradiation to look for changes in supply current indicating
damage. In addition, the two outputs were summed through a
non-irradiated amplifier and the result was monitored before
and after irradiation for SEB. For SET, the two summed outputs
of each ISL70244SEH were used to provide a trigger signal for
an oscilloscope that captured and stored both individual
ISL70244SEH amplifier outputs. In this way, four oscilloscopes
were able to monitor and capture SET in all eight channels of
the four dual operational amplifiers under test.
Four copies of the schematic in Figure 1 were placed on one
board with the ISL70244SEH parts to allow all four to be
irradiated at one time in the beam. The extra amplifier
(out of beam) in the upper right of the schematic, sums the
dual amplifier outputs of the ISL70244SEH to produce a
trigger signal for the oscilloscope so any SET on the part would
be captured.
• ISL70244SEH Radiation Test Report
• ISL70244SEH SMD 5962-13248
• ISL70244SEH Datasheet
• AN1888, “ISL70244SEH Evaluation Board User’s Guide”
• AN1824 “ISL70444SEH Evaluation Board User’s Guide”
• AN1838, “Single Event Effects Testing of the ISL70444SEH,
Quad 40V Radiation Hard Precision Operational Amplifiers”
SEE Test Objectives
The ISL70244SEH was tested to determine its susceptibility to
single event burnout (SEB, destructive ion effects) and to
characterize its single event transient (SET) behavior over
different operating conditions and at several LET levels.
August 29, 2014
AN1961.0
1
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TP14
TP13
TP12
TP11
TP9
TP10
SUMV+_U1
TP21
C13
0.1UF
TP22
VREF_U1
V+_U1
OUTA1
R25
0.01UF
10K
R29
10K
0
OUTB1
R26
7
R14
0
R10
V-_U1
C14
UNNAMED_1_ISL28127_I210_NIN
2
D1
4
C15
0.1UF
1UF
3
2
C3
TP19
U5
C4
BAS40-04
C2
1UF
V-
SUM_U1
6
V+
3
2
1
10K
ISL28127FBZ
C16
C6
0.1UF
0.01UF
0.1UF
C5
SUMV-_U1
C7
UNNAMED_1_SMCAP_I102_B
TP20
UNNAMED_1_SMCAP_I101_A
0.01UF
0.01UF
C3 AND C5 CLOSE TO PART
C8
10K
100K
10K
100
5
2
9
3
8
4
7
5
6
R20
DNP
UNNAMED_1_SMCAP_I127_A
OUT B
C9
OUTB1
9
TP15
OPEN
8
7
R24
R18
6
DNP
4
DNP
10
R28
3
UNNAMED_1_SMRES_I12_B
10K
U1
C12
2
1
OPEN
OPEN
UNNAMED_1_SMRES_I12_A
C10
UNNAMED_1_SMCAP_I127_B
10
0
DUAL OP AMP
1
R6
R2
TP2
R21
UNNAMED_1_SMRES_I111_B
OPEN
100K
TP1
R17
R22
R5
UNNAMED_1_SMCAP_I133_B
R4
IN+ A
TP18
OUTA1
C1
DNP
DNP
R23
100K
DNP
0
R1
TP6
TP17
UNNAMED_1_SMRES_I120_B
R27
R12
C11
R9
OPEN
OPEN
R3
UNNAMED_1_SMRES_I120_A
TP5
OUT A
OUTA1
UNNAMED_1_SMCAP_I29_B
Application Note 1961
C6 AND C7 CLOSE TO PART
IN- A
TP16
100
100K
K10.A
R19
UNNAMED_1_SMRES_I129_A
10K
IN- B
TP3
R7
UNNAMED_1_SMRES_I123_A
TP4
DNP
VREF_U1
DRAWN BY:
DATE:
TIM KLEMANN
IN+ B
TP7
ENGINEER:
R11
R13
R15
R16
RELEASED BY:
DATE:
DNP
100K
100K
DNP
UPDATED BY:
DATE:
TITLE:
ISL70244
SEE TEST BOARD
R8
UNNAMED_1_SMRES_I124_A
DON'T USE VREF FOR NORMAL INPUT
TP8
DNP
DA
KIRAN BERNARD
04/17/2014
FOUR-IN-ONE
TESTER
$CDS_IMAGE|intersil_color_sm.jpg|1194|282
MASK#
FILENAME:
~\ISL70244\ISL70244SEH_SEE1A
FIGURE 1. ISL70244SEH SEE TEST CIRCUITS BOARD SCHEMATIC
HRDWR ID
SHEET
AN1961.0
August 29, 2014
Application Note 1961
SEB Testing of the ISL70244SEH
Dual Operational Amplifier
Four units on a single board were irradiated at once with the
summed supply currents and the summed dual outputs of each
unit were monitored pre and post irradiation. Significant changes
in output or supply current were deemed indications of
permanent damage caused by the combination of voltage stress
and ion impact. The supply voltage was varied to identify the limit
when combined with ions of LET = 86 MeV•cm2/mg. As
reported in Table 1, the four parts survived ±19V and three failed
at ±20V under irradiation.
event counts to the fluence only a lower bound on the effective
cross section represented by the device. Post processing the data
for SET that exceeded ±100mV deviation and selecting the
largest event counts out of the four units tested for each LET and
dividing by the beam fluence yielded the lower bounds for
±100mV SET cross sections as depicted in Figure 2. Since the
post process to ±100mV captures were done on each amplifier
separately, Figure 2 represents cross sections per amplifier. As
can be seen, there is considerable noise in the data and it should
be taken only as indicator of cross section, not an accurate
measurement.
For SET, the parts were tested four at a time as in the SEB
testing. The dual amplifiers of each device were summed
through another (non-irradiated) amplifier to provide an
oscilloscope trigger signal if either operational amplifier under
irradiation experienced an SET. The individual channels were
captured on two other oscilloscope channels. The scope traces
were captured and stored for later post processing.
Table 2 summarizes the SET testing done on the ISL70244SEH.
Each irradiation was done to a fluence of 4x106 ion/cm2 at a flux
of 2x104 ion/(cm2s). Irradiation was done in the sequence from
high LET to lowest and the same four devices were used
throughout the testing. Oscilloscope triggering was at ±20mV
except for entries marked with an asterisk (*, ±50mV) or double
asterisk (**, ±100mV). SET testing was carried out at ambient
temperature, approximately +25°C.
±100mV SET CROSS SECTION
LOWER BOUND (cm2)
6.0E-04
SET Testing of the ISL70244SEH
Dual Operational Amplifier
5.0E-04
4.0E-04
3.0E-04
2.0E-04
1.0E-04
0.0E+00
0
10
20
30
40
50
60
70
LET (MeV.cm2/mg)
FIGURE 2. CROSS SECTION LOWER BOUND OF ±100mV DEVIATION
SET vs LET PER AMPLIFIER
The marked disparity in captures reflects differences in the
oscilloscope trigger levels and times. This makes the ratio of the
TABLE 1. SUMMARY OF SEB TESTING OF THE ISL70244SEH. Au (LET = 86 MeV•cm2/mg) WAS USED TO 5x106 ion/cm2 FOR EACH IRRADIATION
WITH TCASE = +125ºC FOR EACH RUN
RUN
DUT
1
801
2
3
4
1
802
2
3
4
GAIN
VIN
(V)
VS±
(V)
SUM
ICC+
(mA)
PRE
SUM
ICC+
(mA)
POST
SUM
ICC(mA)
PRE
SUM
ICC(mA)
POST
1
0.1
±19
18.502
18.501
17.991
17.993
10
1
0.1
10
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3
±20
20.618
>100
19.743
>100
VOUT
SUM
(V)
PRE
VOUT
SUM
(V)
POST
0.19741
0.19762
0.19823
0.19824
2.1858
2.1857
2.1983
2.198
0.19744
0.19743
0.19825
3
2.1857
13
2.1984
13
AN1961.0
August 29, 2014
Application Note 1961
TABLE 2. SUMMARY OF THE SET TESTING
RUN
DUT
ION
SPECIES
AND ANGLE
EFFECTIVE
LET
MeV*cm2/mg
1
401
60.0
Pr15°
1
1
18
0
0
±1.5
1
8.5
Ar0°
0
0
±18
10
4
1
1
2
8.5
Ne0°
0
0
±1.5
10
4
1
1
2
3
0
10
1
102
0
8.5
Ar0°
2
3
±1.5
1
4
101
0
10
2
3
0
28.0
Kr0°
1
202
±18
1
2
3
0
10
4
201
0
28.0
Kr0°
1
3
±1.5
1
4
302
0
10
2
3
0
60.0
Pr15°
4
301
Vs
(V)
1
2
3
VOUT
(V)
10
4
402
VIN
(V)
1
2
3
GAIN
SETTING
8.5
Ne0°
0
10
4
0
±18
±20mV
A+B
CAPTURES
EVENTS/
FLUENCE
(cm2)
5390
1.3E-03
4655
1.2E-03
1426
3.6E-04
1982
5.0E-04
4636
1.2E-03
3840
9.6E-04
1006
2.5E-04
1654
4.1E-04
42**
1.1E-05
2677
6.7E-04
1130
2.8E-04
2378
5.9E-04
1140**
2.9E-04
2790*
7.0E-04
1098**
2.7E-04
2327**
5.8E-04
20**
5.0E-06
2147
5.4E-04
1008
2.5E-04
2009
5.0E-04
94**
2.4E-05
1479
3.7E-04
1787
4.5E-04
3188
8.0E-04
8**
2.0E-06
112
2.8E-05
471
1.2E-04
938
2.3E-04
5**
1.3E-06
109
2.7E-05
475
1.2E-04
899
2.2E-04
NOTE:
1. Oscilloscope triggering was at ±20mV except for entries marked with an asterisk (*, ±50mV) or double asterisk (**, ±100mV).
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Application Note 1961
Figure 3 shows a plot of the SET duration outside ±100mV vs the
extreme deviation for the case of G = 1, VS = ±1.5V, and
LET = 60. This provides a quick way of categorizing the SET by
magnitude and duration. All SET captured in Figure 3 had
durations of less than 3µs outside of the ±100mV window
centered on the nominal amplifier output. The deviations are
constrained by the supply rails of ±1.5V for this rail-to-rail
amplifier. The SET’s group into distinct types as can be seen in
the plot. The longest events appear in the upper center of
Figure 3 and have deviations in the +300mV range and duration
of approximately 2µs outside the ±100mV window. This
particular type of SET (17 out of 1960 in 4x106 ions/cm2) is
plotted as a composite in Figure 4. Although the total time
outside the ±100mV window was approximately 2µs, the
composite plot indicates the total SET durations were out to
about 4µs before the output returned to its non-SET value.
Figure 5 is a composite plot of the 30 next largest duration SETs
captured for the part represented in Figure 3. These SETs appear
at both left and right edges of Figure 3, indicating both positive
and negative extreme deviations. The total durations of these
events are all under 2µs except for three events, which appear
related to the events of Figure 4.
Figure 6 DUT1/Scope1 channel B run 402 (G = 1, LET = 60,
VS = ±18V) SET of larger than ±100mV (1568 in 4x106
ions/cm2) plotted by extreme deviation on the abscissa and by
total duration outside of ±100mV on the ordinate.
0.5
C3 = VOUT -B ±0.1V
1.5
SET DEVIATION (V)
SET DURATION (µs)
2.0
C3 = VOUT -B ±0.1V
1.0
0
0.5
0
-1.5
-1.0
-0.5
0
0.5
1.0
1.5
-0.5
-5
0
SET EXTREME DEVIATION (V)
10
5
TIME (µs)
FIGURE 3. DUT1/SCOPE1 CHANNEL B RUN 401 (G = 1, VS = ±1.5V,
LET = 60) SET OF LARGER THAN ±100mV (1960 in 4x106
ions/cm2) PLOTTED BY EXTREME DEVIATION ON THE
ABSCISSA AND BY TOTAL DURATION OUTSIDE OF ±100mV
ON THE ORDINATE
FIGURE 4. COMPOSITE SET PLOTS FOR THE 17 SET IN UPPER CENTER
OF Figure 3
1.5
C3 = VOUT -B ±0.1V
1.2
1.0
SET DURATION (µs)
SET DEVIATION (V)
1.0
0.5
0
-0.5
-1.0
C3 = VOUT -B ±0.1V
0.8
0.6
0.4
0.2
0
-1.5
-5
0
5
10
TIME (µs)
FIGURE 5. THE 30 LONGEST SET FOR DUT1/SCOPE1 CHANNEL B RUN
401 (G = 1, VS = ±1.5, LET = 60) AFTER THOSE OF
-2
0
2
4
6
8
SET EXTREME DEVIATION (V)
FIGURE 6. DUT1/SCOPE1 CHANNEL B
Figure 4
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AN1961.0
August 29, 2014
Application Note 1961
When the supply rails are taken to ±18V, the SET are no longer
constrained in deviation and exhibit a somewhat different
pattern on the deviation versus duration plot as in Figure 6. The
central grouping is no longer the longest SET type. A composite
of the 30 longest SET events is shown in. Figure 7 all of these
events, regardless of some large magnitudes, recover within 2µs.
Ar ions. The 30 longest SET of those in Figure 8 are plotted in
Figure 9. These start with spikes and then recover inside of 2µs.
Dropping to LET = 2.7 (Ne) further reduces the SET’s in both
deviation and duration as depicted in Figure 10. These SET are
little more than spikes with 0.5µs or less duration outside
±100mV deviation.
Dropping the LET results in smaller and shorter SET as is
indicated in Figure 8 where the SET are resulting from LET = 8.5
8
C3 = VOUT -B ±0.1V
0.7
6
C2 = VOUT -A ±0.1V
SET DEVIATION (V)
SET DEVIATION (V)
0.6
4
2
0
0.5
0.4
0.3
0.2
-2
0.1
4
-2
0
2
TIME (µs)
4
0
6
-1.0
-0.5
0
0.5
1.0
TIME (µs)
FIGURE 7. COMPOSITE TRACE PLOT OF THE 30 LONGEST DURATION
EVENTS OUTSIDE OF ±100mV FOR DUT1/SCOPE1 RUN
402 (G = 1, VS = ±18V, LET = 60)
FIGURE 8. DUT2/SCOPE2 CHANNEL A RUN 202 (G = 1, VS = ±18V,
LET = 8.5) PLOT OF SET OUTSIDE OF ±100mV DEVIATION
1.5
0.5
C2 = VOUT -A ±0.1V
1.0
SET DURATION (µs)
SET DEVIATION (V)
0.4
0.5
0
-0.5
0.3
C3 = VOUT -B ±0.1V
0.2
0.1
-1.0
0
-1.5
0
TIME (µs)
-5
FIGURE 9. 30 LONGEST EVENTS RECORDED FOR DUT2/SCOPE2
CHANNEL A RUN 202 (G = 1, VS = ±18V, LET = 8.5)
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5
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
SET EXTREME DEVIATION (V)
FIGURE 10. DUT1/SCOPE1 CHANNEL B RUN 102 (G = 1, VS = ±18V,
LET = 2.7) EVENTS BEYOND ±100mV
(37 IN 4x106 IONS/Cm2)
AN1961.0
August 29, 2014
Application Note 1961
1.4
C3 = VOUT -B ±0.1V
C3 = VOUT -B ±0.1V
10
1.0
SET DEVIATION (V)
SET DURATION (µs)
1.2
0.8
0.6
0.4
0.2
5.0
0
-5.0
-10
0
-10
-5.0
0
5.0
SET EXTREME DEVIATION (V)
10
FIGURE 11. DUT3/SCOPE3 CHANNEL B RUN 402 (G = 10, LET = 60,
VS = ±18V) for SET BEYOND THE ±100mV THRESHOLD
(478 in 4x106 ions/cm2)
-2
-1
0
1
2
TIME (µs)
3
4
5
FIGURE 12. THE 30 LONGEST SET TO ±100mv FOR DUT3/SCOPE3
CHANNEL B RUN 402 (G = 10, VS = ±18, LET = 60)
Figure 10, Changing the amplifier gain from 1 to 10 has minor
impact on the SET forms as can be seen in Figure 11, which can
be compared to Figure 6. Again the SET durations beyond
±100mV are below 2µs while the deviations can go past ±10V.
The 30 longest SET’s are depicted in Figure 12 and all of these
SET’s are over in less than 2µs.
Conclusions
The ISL70244SEH dual operational amplifier has been shown to
be free from permanent damage under irradiation by ions with
LET of 86 MeV•cm2/mg (normal incidence) up to supply
voltages of ±19V at +125°C case temperature. At ±20V damage
was noted.
SET testing at +25°C demonstrated that SET resulting from ions
of up to LET = 60 are limited to under 5µs in duration. The
deviation for these SET range from -12V to +12V from a nominal
0V output with supply voltages of ±18V. These magnitudes as
well as the durations decrease with decreasing LET. At
LET = 2.7V, the lowest tested, SET are bounded within ±0.4V and
have durations of less than 1µs.
Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is
cautioned to verify that the Application Note or Technical Brief is current before proceeding.
For information regarding Intersil Corporation and its products, see www.intersil.com
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