an1785

Application Note 1785
Authors: Oscar Mansilla, Richard Hood, Lawrence Pearce, Eric Thomson and Nick Vanvonno
Single Event Effects Testing of the ISL70417SEH, Quad
40V Rad Hard Precision Operation Amplifiers
Introduction
Key SEE Test Results
The intense heavy ion environment encountered in space
applications can cause a variety of transient and destructive
effects in analog circuits, including single-event latch-up (SEL),
single-event transients (SET) and single-event burnout (SEB).
These effects can lead to system-level failures including
disruption and permanent damage. For predictable and
reliable system operation, these components have to be
formally designed and fabricated for SEE hardness, followed
by detailed SEE testing to validate the design. This report
discusses the results of SEE testing of Intersil’s ISL70417SEH.
• SOI process for latch-up immunity
Related Documents
• No single event burnout up to 40V supply range
• Ultra low cross section for significant SETs:
- VS = ±5V: 1.75 x 10-5 cm2
- VS = ±15V: 1.15 x 10-5 cm2
• Offers a lower cross section at similar gain and LET than the
RH1014
SEE Test Objective
The objectives of SEE testing of the ISL70417SEH were to
evaluate its susceptibility to destructive events induced by
single event effects, such as single event burnout and to
determine its SET behavior.
• ISL70417SEH Data Sheet, FN7962
• ISL70417SEH Radiation Report, AN1792
Product Description
The ISL70417SEH contains four very high precision amplifiers
featuring the perfect combination of low noise vs power
consumption. These devices are fabricated in a 40V advanced
bonded wafer SOI process using deep trench isolation,
resulting in a fully isolated structure. This choice of process
technology also results in latch-up free performance, whether
electrically or single event (SEL) induced.
SEE Test Facility
Testing was performed at the Texas A&M University (TAMU)
Cyclotron Institute heavy ion facility. This facility is coupled to a
K500 super-conducting cyclotron, which is capable of
generating a wide range of test particles with the various
energy, flux and fluence levels needed for advanced radiation
testing.
A super-beta NPN input stage with input bias current
cancellation provides low input bias current, low input offset
voltage, low input noise voltage, and low 1/f noise corner
frequency. These amplifiers also feature high open loop gain
for excellent CMRR and THD+N performance. A
complementary bipolar output stage enables high capacitive
load drive without external compensation.
SEE Test Procedure
This amplifier is designed to operate over a wide supply range
of 4.5V to 40V. Applications for these amplifiers include
precision active filters, low noise front ends, loop filters, data
acquisition and charge amplifiers.
The device under test (DUT) was mounted in the beam line and
irradiated with heavy ions of the appropriate species. The parts
were assembled in 14 lead dual in-line packages with the
metal lid removed for beam exposure. The beam was directed
onto the exposed die and the beam flux, beam fluence and
errors in the device outputs were measured.
The combination of high precision, low noise, low power and
radiation tolerance provides the user with outstanding value and
flexibility relative to similar competitive parts.
The part is packaged in a 14 lead hermetic ceramic flat pack
and operates over the extended temperature range of -55°C to
+125°C. A summary of key full temperature range
specifications follows:
• Input Offset Voltage . . . . . . . . . . . . . . . . . . . . . . . 110µV, max.
• Offset Voltage Drift . . . . . . . . . . . . . . . . . . . . . . . 1µV/°C, max.
The part was tested for single event burnout, using Xe ions at
45°C incidence (LET = 73.9MeV•cm2/mg) with a case
temperature of 125°C, and single event transient
characterized using Ne, Ar, and Kr ions with a case
temperature of 25°C.
The tests were controlled remotely from the control room. All
input power was supplied from portable power supplies
connected via cable to the DUT. The supply currents were
monitored along with the device outputs. All currents were
measured with digital ammeters, while all the output
waveforms were monitored on a digital oscilloscope for ease
of identifying the different types of SEE, displayed by the part.
Events were captured by triggering on changes in the output.
• Input Offset Current . . . . . . . . . . . . . . . . . . . . . . . . . 3nA, max.
• Input Bias Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 5nA, max.
• Supply Current/Amplifier . . . . . . . . . . . . . . . . . . 0.68mA, max.
• Gain Bandwidth Product . . . . . . . . . . . . . . . . . . . 1.5MHz, typ.
October 17, 2012
AN1785.0
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas Inc. 2012. All Rights Reserved.
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
Application Note 1785
SEE Test Set-Up Diagrams
Single Event Transient Results
A schematic of the evaluation board used during testing is shown
in Figure 1.
Test Setup
RF
+
IN RIN-
IN-
IN-
-
10k
RIN+
IN+
IN +
VCM
VREF
VREF
IN+
ISL70417SEH (1/2)
100k
+
10k
VP
V+
V-
0
VOUT
TRIGGER CONNECTIONS:
VM
•
•
•
•
RREF+
100k
GND
FIGURE 1. ISL70417SEH SEE TEST SCHEMATIC
Each operational amplifier was set up in a non-inverting
operation with G = 10V/V. The IN- inputs were grounded and the
input signal was applied to the IN+ pin. The reference input was
also grounded. The complete board schematic and silk screen of
the top of the board are included in Appendix A.
Cross Section Calculation
Cross sections (CS) are calculated as shown by Equation 1:
(EQ. 1)
CS (LET) = N/F
where:
• CS is the SET cross section (cm²), expressed as a function of
the heavy ion LET
• LET is the linear energy transfer in MeV·cm²/mg, corrected
according to the incident angle, if any
• N is the total number of SET events
• F is fluence in particles/cm²
A value of 1/F is the assumed cross section when no event is
observed.
Single Event Burnout Results
The first testing sequence looked at destructive effects due to
burnout. A burnout condition is indicated by a permanent change
in the device supply current after application of the beam. If the
increased current can be reset by cycling power, it is termed a
latch-up. No burnout was observed using Xe ions at 45°C. Testing
was performed on four parts at TC = +125°C and up to the
maximum voltage, VS = ±20V. The first two parts (part ID 1 & 2)
commenced testing with VS = ±18V and on subsequent tests VS
voltage was increased until VS = ±20V was achieved. The last two
parts were tested with a VS of ±18.4V and ±20V. All test runs
were run to a fluence of 2x106/cm2. A power supply applied a
DC voltage of 200mV to the non-inverting inputs of the amplifiers
during the test. Functionality of all outputs was verified after
exposure. IDD and IEE were recorded pre and post exposure and
summed up. A 5% change in total supply current indicates
permanent damage to the op amp. Test results are shown in
Table 1 for the 40V total supply voltage.
2
Biasing used for SET test runs was VS = ±5V and ± 15V. Similar to
SEL/B testing, a DC voltage of 200mV was applied to the
non-inverting inputs of the amplifiers. Signals from the switch
board in the control room were connected to four LECROY
oscilloscopes. Summary of the scope settings are as follows:
Scope 1 is set to trigger on Channel 1
Scope 2 is set to trigger on Channel 2
Scope 3 is set to trigger on Channel 3
Scope 4 is set to trigger on Channel 4
CHANNEL CONNECTION ON ALL SCOPES FOR
VS = ±5V:
• CH1 = OUTA 1V/div, CH2 = OUTB 1V/div
• CH3 = OUTC 1V/div, CH4 = OUTD 1V/div
CHANNEL CONNECTION ON ALL SCOPES FOR
VS = ±15V:
• CH1 = OUTA 2V/div, CH2 = OUTB 2V/div
• CH3 = OUTC 2V/div, CH4 = OUTD 2V/div
SET events are recorded when movement on output during beam
exposure exceeds the set window trigger of ±200mV for VS = ±5V
and ±400mV for VS = ±15V. The trigger window was modified as
a result of the changing the scale for the higher supply voltage in
order to capture the complete transients. The switch board at the
end of the 20-ft cabling was found to require terminations of
10nF to keep the noise on the waveforms to a minimum.
Cross Section Results
Compared to other Intersil radiation tolerant circuits, the
ISL70417SEH was not designed for single event transient (SET)
mitigation. The best approach to characterize the SET response
is to represent the data on a LET threshold plot. Figure 2 shows
the cross section of the IC versus the LET level, at VS = ±5V and
±15V. It can be seen that for an LET <5.4 MeV· cm2/mg, the
cross section is lower with a higher supply voltage. As the LET
increases with the use of Ar ions, the higher supply voltage
exhibits a larger cross section. However, with Kr ions the cross
section areas merge. Data from Figure 2 is represented in
Table 2. Figures 3 through 10 show the cross section of each
channel independently at VS = ±5V and ± 15V with confidence
interval bars for a 90% confidence level. The graphs also show
that there is no channel-to-channel sensitivity. Complete data for
these figures is available in Appendix A.
AN1785.0
October 17, 2012
Application Note 1785
TABLE 1. ISL70417SEH DETAILS OF SEB/L TESTS FOR VS = ±20V and LET = 73.9MeV · cm2/mg
SUPPLY
CURRENT
POSTEXPOSURE
(mA)
TEMP
(°C)
LET
(MeV . cm2/mg)
SUPPLY
CURRENT
PREEXPOSURE
(mA)
+125
73.9
4.201
4.201
0
2.0 x 106
5.0 x 10-7
1
PASS
+125
73.9
4.349
4.347
0
2.0 x 106
5.0 x 10-7
2
PASS
+125
73.9
4.217
4.217
0
2.0 x 106
5.0 x 10-7
3
PASS
+125
73.9
4.215
4.216
0
2.0 x 106
5.0 x 10-7
4
PASS
TOTAL EVENTS
0
DESTRUCTIVE
EVENTS
CUMULATIVE
FLUENCE
(PARTICLES/cm2)
CUMULATIVE
CROSS
SECTION
(cm2)
DEVICE ID
SEB
OVERALL FLUENCE
8.0 x 106
OVERALL CS
1.25 x 10-7
TOTAL UNITS
4
TABLE 2. DETAILS OF THE LET THRESHOLD PLOT OF THE ISL70417SEH
SUPPLY
VOLTAGE (V)
ION
ANGLE
EFFECTIVE LET
(MeV . cm2/mg)
FLUENCE PER RUN
(PARTICLES/cm2)
NUMBER OF RUNS
TOTAL SET
EVENT CS (cm2)
±5
Ne
0
2.7
2.0 x 106
4
392
4.90 x 10-5
4
1789
2.24 x 10-4
±5
Ar
0
8.5
2.0 x 106
±5
Ar
45
12
2.0 x 106
4
2072
2.59 x 10-4
±5
Kr
0
28
2.0 x 106
4
4852
1.21 x 10-3
±5
Kr
50
44
1.0 x 106
4
4683
2.34 x 10-3
±15
Ne
0
2.7
2.0 x 106
4
239
2.99 x 10-5
±15
Ar
0
8.5
2.0 x 106
4
2957
3.70 x 10-4
±15
Ar
45
12
2.0 x 106
4
4118
5.15 x 10-4
±15
Kr
0
28
2.0 x 106
4
8643
1.08 x 10-3
44
1.0 x 106
4
6476
1.62 x 10-3
±15
Kr
50
3
AN1785.0
October 17, 2012
Application Note 1785
SET CROSS SECTION (cm2)
1.0x 10-2
1.0 x 10-3
VS = ±15V
VS = ±5.0V
1.0 x 10-4
1.0 x 10-5
0
5
10
15
20
25
30
35
40
45
50
LET (MeV · cm2/mg)
FIGURE 2. SET CROSS SECTION vs LINEAR ENERGY TRANSFER vs SUPPLY VOLTAGE
6.0 x 10-4
9.0 x 10-4
5.0 x 10-4
7.5 x 10-4
CROSS SECTION (cm2)
CROSS SECTION (cm2)
SEE Report Performance Curves
4.0 x 10-4
3.0 x 10-4
2.0 x 10-4
CHANNEL A
4.5 x 10-4
3.0 x 10-4
CHANNEL B
1.5 x 10-4
1.0 x 10-4
0.0 x 10-0
6.0 x 10-4
0
10
20
30
LET (MeV cm2/mg)
40
50
FIGURE 3. CHANNEL A SET CROSS SECTION vs LET FOR VS = ±5V
WITH 90% CONFIDENCE LEVEL INTERVAL BARS
4
0.0 x 10-0
0
10
20
30
LET (MeV cm2/mg)
40
50
FIGURE 4. CHANNEL B SET CROSS SECTION vs LET FOR VS = ±5V
WITH 90% CONFIDENCE LEVEL INTERVAL BARS
AN1785.0
October 17, 2012
Application Note 1785
9.0 x 10-4
4.2 x 10-4
7.5 x 10-4
3.5 x 10-4
CROSS SECTION (cm2)
CROSS SECTION (cm2)
SEE Report Performance Curves (Continued)
6.0 x 10-4
4.5 x 10-4
3.0 x 10-4
1.5 x 10-4
0.0 x 10-0
0
20
30
40
2.1 x 10-4
CHANNEL D
1.4 x 10-4
7.0 x 10-5
CHANNEL C
10
2.8 x 10-4
0.0 x 10-0
0
50
10
6.0 x 10-4
4.0 x 10-4
5.0 x 10-4
CROSS SECTION (cm2)
CROSS SECTION (cm2)
4.8 x 10-4
3.2 x 10-4
2.4 x 10-4
CHANNEL A
8.0 x 10-5
40
50
4.0 x 10-4
3.0 x 10-4
2.0 x 10-4
CHANNEL B
1.0 x 10-4
0.0 x 10-0
0.0 x 10-0
0
10
20
30
40
50
0
10
6.0 x 10-4
3.5 x 10-4
5.0 x 10-4
CROSS SECTION (cm2)
4.2 x 10-4
2.8 x 10-4
2.1 x 10-4
CHANNEL C
7.0 x 10-5
0.0 x 10-0
0
30
40
50
FIGURE 8. CHANNEL B SET CROSS SECTION vs LET FOR VS = ±15V
WITH 90% CONFIDENCE LEVEL INTERVAL BARS
FIGURE 7. CHANNEL A SET CROSS SECTION vs LET FOR VS = ±15V
WITH 90% CONFIDENCE LEVEL INTERVAL BARS
1.4 x 10-4
20
LET (MeV cm2/mg)
LET (MeV cm2/mg)
CROSS SECTION (cm2)
30
FIGURE 6. CHANNEL D SET CROSS SECTION vs LET FOR VS = ±5V
WITH 90% CONFIDENCE LEVEL INTERVAL BARS
FIGURE 5. CHANNEL C SET CROSS SECTION vs LET FOR VS = ±5V
WITH 90% CONFIDENCE LEVEL INTERVAL BARS
1.6 x 10-4
20
LET (MeV cm2/mg)
LET (MeV cm2/mg)
4.0 x 10-4
3.0 x 10-4
CHANNEL D
2.0 x 10-4
1.0 x 10-4
10
20
30
40
50
LET (MeV cm2/mg)
FIGURE 9. CHANNEL C SET CROSS SECTION vs LET FOR VS = ±15V
WITH 90% CONFIDENCE LEVEL INTERVAL BARS
5
0.0 x 10-0
0
10
20
30
40
50
LET (MeV cm2/mg)
FIGURE 10. CHANNEL D SET CROSS SECTION vs LET FOR VS = ±15V
WITH 90% CONFIDENCE LEVEL INTERVAL BARS
AN1785.0
October 17, 2012
Application Note 1785
LET = 28MeV · cm2/mg
VS = ±15V
FIGURE 11. EXAMPLE POSITIVE TRANSIENT
LET = 28MeV · cm2/mg
VS = ±15V
FIGURE 13. EXAMPLE SHORT POSITIVE AND NEGATIVE
TRANSIENT
LET = 28MeV · cm2/mg
VS = ±15V
LET = 28MeV · cm2/mg
VS = ±15V
FIGURE 12. EXAMPLE NEGATIVE TRANSIENT
Single Event Transient Response
The captured single event transients had a variety of amplitudes
and widths. There are both positive and negative transients on
most of the captures, while the rest of the transients were either
positive or negative. Figures 11 through 14 give an example of
each type of transient observed during SET testing.
The magnitude of the SET is proportional to the LET value; the
higher the LET value the larger the peak voltage deviation, while
the widths of single event transients are independent of the LET
value. The response could be explained by the fact that higher
LETs inject more charge into the silicon (probably the biasing
network) therefore directly influencing the magnitude of
deviation, but the time to recover is strictly due to the speed of
the op amp (slew rate) which a varying LET level has no affect on.
6
FIGURE 14. EXAMPLE LONG POSITIVE AND NEGATIVE TRANSIENT
Note in the tests with VS = ±5V, the higher LETs do produce a
larger magnitude in deviation however since the ISL70417SEH is
not a rail to rail IC, the output saturates to the VOH level for LETs
greater than 8.5.
Figure 15 shows a histogram plot of the magnitude of the SET
versus LET for channels biased at ±5V. For LET 2.7 the peak
magnitude is 1.6V, for LET 8.5 there peak is 2V the and it only
occurred once. As the LET increases the peak is still 2V however
the occurrences are more common.
Figure 16 shows a histogram plot of the peak positive deviations
for channel 1 and VS = ±15V. Since this bias condition allows for
a VOH level of 13.5V, relationship of LET vs SET magnitude is
clearly seen. At an LET = 2.7 the peak voltage deviation is 1.5V,
for 8.5 LET the peak voltage deviation increases to 5.5V, and as
the LET increases so the magnitude of the deviation as an LET of
44 has peak deviations that are 8.5V in magnitude.
AN1785.0
October 17, 2012
Application Note 1785
180
160
VS = ±15V
LET 2.7
NUMBER OF EVENTS
140
LET8.5
LET12
LET 28
LET 44
120
100
80
60
40
20
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
SET MAGNITUDE (V)
FIGURE 15. SET MAGNITUDE vs LINEAR ENERGY TRANSFER FOR VS = ±5V
120
100
VS = ±15V
NUMBER OF EVENTS
LET 2.7
LET 8.5
LET 12
LET 28
LET 44
80
60
40
20
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
SET MAGNITUDE (V)
FIGURE 16. SET MAGNITUDE vs LINEAR ENERGY TRANSFER vs FOR V S = ±15V
7
AN1785.0
October 17, 2012
Application Note 1785
Simply stating that an SET could last as long as 50µs or 60µs,
depending on the supply voltage does not give a true indication
of the performance of the part. The need for further analysis
arises from the distribution of the duration of the events.
Figure 17 is the histogram plot of channel B transient duration
for run 421 at an LET = 28.0MeV · cm2/mg and a supply voltage
of ±5V. The distribution is bimodal, with the majority of the
transient widths being 10-20µs (data set A) in duration and a few
number of transients recovering in the 40-50µs range (data
set B). Data set A has a total of 564 counts and a cross section of
2.82 x 10-4 cm2. Data set B has a total of 35 counts and a cross
section of 1.75 x 10-5 cm2. The cross section for transients
lasting in the 40-50µs range is over a magnitude lower than the
those in the 10-20µs range and the probability of an SET (which
falls under data set B) occurring is much lower than that of data
set A. In addition, since the length of the duration does not vary
with LET level, the same bimodal distribution will occur at all LET
levels.
1000
LET = 28MeV · cm2/mg
VS = ±5V
SET A
564 COUNTS
COUNTS (%)
100
10
1
20
30
40
50
60
70
1000
LET = 28MeV · cm2/mg
VS = ±15V
80
90
100
SET WIDTH (µs)
SET A
409 COUNTS
100
SET B
23 COUNTS
10
1
FIGURE
18. RUN 422 CHANNEL A SET WIDTH HISTOGRAM PL
10
20
30
40
50
60
70
80
90
100
SET WIDTH (µs)
FIGURE 18. RUN 422 CHANNEL A SET WIDTH HISTOGRAM PLOT
In addition, the bimodal distribution clearly indicates there are
different areas of sensitivity and so supports the interpretation of
distinct cross sections from truly different physical mechanisms.
A summary of the bimodal distribution and cross section is
shown below:
DATA SET
SET B
35 COUNTS
10
Figure 18 is the histogram plot of channel A transient duration
for run 422 at an LET = 28.0MeV · cm2/mg and a supply voltage
of ±15V. The distribution is also bimodal, with the majority of the
transient widths being 10-20µs (data set A) in duration and a few
number of transients recovering in the 50-60µs range (data
set B). Data set A has a total of 409 counts and a cross section of
2.05 x 10-4 cm2. Data set B has a total of 23 counts and a cross
section of 1.15 x 10-5 cm2. This demonstrates that even though
the ISL70417SEH experiences SETs that prolong in the
50µs-60µs range, the cross section for those events are a
magnitude lower than those that last between 10 and 20µs.
COUNTS (%)
There was a correlation to the duration of the SET with respect to
the supply voltage; the lower supply voltage exhibited a shorter
SET duration while the op amps with a higher supply had a 10µs
longer duration. The majority of the SETs with VS = ±5V had
widths <10µs and the longest ones lasted <50µs and the
majority of the SETs on the op amps with a VS = ±15V had widths
<20µs and the longest ones lasted <60µs. The increase in time
is just due to the fact that op amps biased at ±15V experienced a
larger deviation and since the slew rate does not vary with supply
voltage, it takes longer to recover.
LET
CROSS SECTION
±5V
LET = 28MeV · cm2/mg
2.82 x 10-4 cm2
±5V
LET = 28MeV · cm2/mg
1.75 x 10-5 cm2
A
±15V
LET = 28MeV · cm2/mg
2.05 x 10-4 cm2
B
±15V
LET = 28MeV · cm2/mg
1.15 x 10-5 cm2
A
B
VS
Figures 19 through 58 represent transients on each channel of
the amplifier under various LET values and both bias conditions.
The plots are a composite of the first 50 transients captured on
the scope. This information is useful in quantifying the excursion
of the output as a result of SEE induced transients.
FIGURE 17. RUN 421 CHANNEL B SET WIDTH HISTOGRAM PLOT
8
AN1785.0
October 17, 2012
Application Note 1785
Typical SET Captures
X axis = 20µs/div
FIGURE 19. TYPICAL CAPTURE AT VS = ±5V, CHANNEL A,
LET = 2.7MeV*cm2/mg, RUN 403
X axis = 20µs/div
FIGURE 21. TYPICAL CAPTURE AT VS = ±5V, CHANNEL C,
LET = 2.7MeV*cm2/mg, RUN 405
9
X axis = 20µs/div
FIGURE 20. TYPICAL CAPTURE AT VS = ±5V, CHANNEL B,
LET = 2.7MeV*cm2/mg, RUN 403
X axis = 20µs/div
FIGURE 22. TYPICAL CAPTURE AT VS = ±5V, CHANNEL D,
LET = 2.7MeV*cm2/mg, RUN 407
AN1785.0
October 17, 2012
Application Note 1785
Typical SET Captures (Continued)
X axis = 20µs/div
FIGURE 23. TYPICAL CAPTURE AT VS = ±5V, CHANNEL A,
LET = 8.5MeV*cm2/mg, RUN 409
X axis = 20µs/div
FIGURE 25. TYPICAL CAPTURE AT VS = ±5V, CHANNEL C,
LET = 8.5MeV*cm2/mg, RUN 411
10
X axis = 20µs/div
FIGURE 24. TYPICAL CAPTURE AT VS = ±5V, CHANNEL B,
LET = 8.5MeV*cm2/mg, RUN 415
X axis = 20µs/div
FIGURE 26. TYPICAL CAPTURE AT VS = ±5V, CHANNEL D,
LET = 8.5MeV*cm2/mg, RUN 411
AN1785.0
October 17, 2012
Application Note 1785
Typical SET Captures (Continued)
X axis = 20µs/div
FIGURE 27. TYPICAL CAPTURE AT VS = ±5V, CHANNEL A,
LET = 12MeV*cm2/mg, RUN 425
X axis = 20µs/div
FIGURE 29. TYPICAL CAPTURE AT VS = ±5V, CHANNEL C,
LET = 12MeV*cm2/mg, RUN 431
11
X axis = 20µs/div
FIGURE 28. TYPICAL CAPTURE AT VS = ±5V, CHANNEL B,
LET = 12MeV*cm2/mg, RUN 429
X axis = 20µs/div
FIGURE 30. TYPICAL CAPTURE AT VS = ±5V, CHANNEL D,
LET = 12MeV*cm2/mg, RUN 425
AN1785.0
October 17, 2012
Application Note 1785
Typical SET Captures (Continued)
X axis = 20µs/div
FIGURE 31. TYPICAL CAPTURE AT VS = ±5V, CHANNEL A,
LET = 28MeV*cm2/mg2, RUN 421
X axis = 20µs/div
FIGURE 33. TYPICAL CAPTURE AT VS = ±5V, CHANNEL C,
LET = 28MeV*cm2/mg, RUN 419
12
X axis = 20µs/div
FIGURE 32. TYPICAL CAPTURE AT VS = ±5V, CHANNEL B,
LET = 28MeV*cm2/mg, RUN 417
X axis = 20µs/div
FIGURE 34. TYPICAL CAPTURE AT VS = ±5V, CHANNEL D,
LET = 28MeV*cm2/mg, RUN 423
AN1785.0
October 17, 2012
Application Note 1785
Typical SET Captures (Continued)
X axis = 50µs/div
FIGURE 35. TYPICAL CAPTURE AT VS = ±5V, CHANNEL A,
LET = 44MeV*cm2/mg, RUN 409
X axis = 50µs/div
FIGURE 37. TYPICAL CAPTURE AT VS = ±5V, CHANNEL C,
LET = 44MeV*cm2/mg, RUN 413
13
X axis = 50µs/div
FIGURE 36. TYPICAL CAPTURE AT VS = ±5V, CHANNEL B,
LET = 44MeV*cm2/mg, RUN 411
X axis = 50µs/div
FIGURE 38. TYPICAL CAPTURE AT VS = ±5V, CHANNEL D,
LET = 44MeV*cm2/mg, RUN 415
AN1785.0
October 17, 2012
Application Note 1785
Typical SET Captures (Continued)
X axis = 20µs/div
FIGURE 39. TYPICAL CAPTURE AT VS = ±15V, CHANNEL A,
LET = 2.7MeV*cm2/mg, RUN 404
X axis = 20µs/div
FIGURE 41. TYPICAL CAPTURE AT VS = ±15V, CHANNEL C,
LET = 2.7MeV*cm2/mg, RUN 406
14
X axis = 20µs/div
FIGURE 40. TYPICAL CAPTURE AT VS = ±15V, CHANNEL B,
LET = 2.7MeV*cm2/mg, RUN 402
X axis = 20µs/div
FIGURE 42. TYPICAL CAPTURE AT VS = ±15V, CHANNEL D,
LET = 2.7MeV*cm2/mg, RUN 408
AN1785.0
October 17, 2012
Application Note 1785
Typical SET Captures (Continued)
X axis = 20µs/div
FIGURE 43. TYPICAL CAPTURE AT VS = ±15V, CHANNEL A,
LET = 8.5MeV*cm2/mg, RUN 410
X axis = 20µs/div
FIGURE 45. TYPICAL CAPTURE AT VS = ±15V, CHANNEL C,
LET = 8.5MeV*cm2/mg, RUN 414
15
X axis = 20µs/div
FIGURE 44. TYPICAL CAPTURE AT VS = ±15V, CHANNEL B,
LET = 8.5MeV*cm2/mg, RUN 412
X axis = 20µs/div
FIGURE 46. TYPICAL CAPTURE AT VS = ±15V, CHANNEL D,
LET = 8.5MeV*cm2/mg, RUN 416
AN1785.0
October 17, 2012
Application Note 1785
Typical SET Captures (Continued)
X axis = 20µs/div
FIGURE 47. TYPICAL CAPTURE AT VS = ±15V, CHANNEL A,
LET = 12MeV*cm2/mg, RUN 426
X axis = 20µs/div
FIGURE 49. TYPICAL CAPTURE AT VS = ±15V, CHANNEL C,
LET = 12MeV*cm2/mg, RUN 427
16
X axis = 20µs/div
FIGURE 48. TYPICAL CAPTURE AT VS = ±15V, CHANNEL B,
LET = 12MeV*cm2/mg, RUN 430
X axis = 20µs/div
FIGURE 50. TYPICAL CAPTURE AT VS = ±15V, CHANNEL D,
LET = 12MeV*cm2/mg, RUN 432
AN1785.0
October 17, 2012
Application Note 1785
Typical SET Captures (Continued)
X axis = 20µs/div
FIGURE 51. TYPICAL CAPTURE AT VS = ±15V, CHANNEL A,
LET = 28MeV*cm2/mg2, RUN 422
X axis = 20µs/div
FIGURE 53. TYPICAL CAPTURE AT VS = ±15V, CHANNEL C,
LET = 28MeV*cm2/mg, RUN 424
17
X axis = 20µs/div
FIGURE 52. TYPICAL CAPTURE AT VS = ±15V, CHANNEL B,
LET = 28MeV*cm2/mg, RUN 422
X axis = 20µs/div
FIGURE 54. TYPICAL CAPTURE AT VS = ±15V, CHANNEL D,
LET = 28MeV*cm2/mg, RUN 424
AN1785.0
October 17, 2012
Application Note 1785
Typical SET Captures (Continued)
X axis = 50µs/div
FIGURE 55. TYPICAL CAPTURE AT VS = ±15V, CHANNEL A,
LET = 44MeV*cm2/mg, RUN 410
X axis = 50µs/div
FIGURE 57. TYPICAL CAPTURE AT VS = ±15V, CHANNEL C,
LET = 44MeV*cm2/mg, RUN 414
18
X axis = 50µs/div
FIGURE 56. TYPICAL CAPTURE AT VS = ±15V, CHANNEL B,
LET = 44MeV*cm2/mg, RUN 412
X axis = 50µs/div
FIGURE 58. TYPICAL CAPTURE AT VS = ±15V, CHANNEL D,
LET = 44MeV*cm2/mg, RUN 416
AN1785.0
October 17, 2012
Application Note 1785
Summary
100
LET = 44MeV · cm2/mg
VS = ±15V
90
Single Event Burnout
It is also not surprising that since the process is an SOI process,
there was no latch-up observed on the device.
80
70
60
COUNTS
No single event burnout (SEB) was observed for the device up to
an LET of 73.9MeV · cm2/mg (+125°C) at a maximum voltage
supply of VS = ± 20V. SEB was tested and passed at a supply
voltage VS = ± 20V. This gives over 20% margin on the
recommended supply voltage of VS = ± 15V. Since the
operational amplifier has no internal ground reference, the 40V
supply range can be partitioned as desired, for example have a
single supply where the V+ pin can be tied to 40V and the V- pin
tied to ground (0V).
50
40
30
20
10
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9
SET MAGNITUDE (V)
Single Event Transient
Based on the results presented, the ISL70417SEH op amp offers
advantages over one competitor’s part by having a lower SET
cross section at a gain of 10[1]. The length of worst case SETs
can be 50µs for devices with VS = ±5V and 60µs for devices with
VS = ±15V. However, it has be demonstrated that the cross
section of the events that last in the 50-60µs range is a
magnitude lower than those lasting 10-20µs. This part does not
experience the long recovery time (>100µs) during a single event
transient seen on other competitor op amps in a comparator
application[2]. This may be explained by the higher drive
capability of the ISL70417SEH and its ability to drive highly
capacitive loads. Magnitude of the deviation for VS = ±5V was to
1V below the rail in the positive direction and 2V above the rail in
the negative direction. For amplifiers supplied with a VS = ±15V,
the transient excursions were much larger, however they do not
extend to the expected VOH or VOL levels of ±13.5V. All the
transients observed were 8.5V deviations or less and recovery
time of the transients were less than 60µs. Figures 59 and 60
show the histogram of the voltage deviation magnitude during a
SET. These results are from run 410, the ISL70417SEH was
biased with a VS = ±15V and an LET of 44MeV · cm2/mg was
used during the run. This demonstrates the peak magnitude the
output voltage deviates due to a SET at the highest tested LET.
FIGURE 60. RUN 410 POSITIVE TRANSIENT HISTOGRAM
Overall, the ISL70417SEH is very well behaved in a heavy ion
environment. In space flight applications, the ISL70417SEH may
require filtering or other types of SET mitigation techniques.
However, the ISL70417SEH offers a competitive advantage over
other rad hard op amps by offering:
• No single event burnout up to ±40V
• SOI process for latch-up immunity
• Very low cross section for significant SETs:
- VS = ±5V: 1.75 x 10-5 cm2
- VS = ±15V: 1.15 x 10-5 cm2
• A lower cross section at similar gain and LET than its major
competitor
References
[1] Ray Ladbury and Stephen Buchner, “SEE Testing of the
RH1013 Dual Precision Operational Amplifier”
http://radhome.gsfc.nasa.gov/radhome/papers/T121805_RH1013.pdf
[2] S. Larsson and S. Mattsson, “Heavy Ion Transients in
Operational Amplifier of Type LM124, RH1014 and OP27”
https://escies.org/download/webDocumentFile?id=837
140
LET = 44MeV · cm2/mg
VS = ±15V
120
COUNTS
100
80
60
40
20
0
0.5
1 1.5
2 2.5
3 3.5
4 4.5
5 5.5
6 6.5
7 7.5
8 8.5
9
SET MAGNITUDE (V)
FIGURE 59. RUN 410 NEGATIVE TRANSIENT HISTOGRAM
19
AN1785.0
October 17, 2012
Application Note 1785
Appendix A
Appendix A includes the data from Figures 3 through 10 in tabular format, complete test schematic, and top silk screen image.
TABLE 3. DATA OF CHANNEL CROSS SECTION OF THE ISL70417SEH REPRESENTED IN FIGURES 3 THROUGH 6
EVENTS
EVENT CS
(cm2)
90% CI UPPER
LIMIT
(cm2)
90% CI LOWER
LIMIT
(cm2)
74
9.25 x 10-6
1.12 x 10-5
7.59 x 10-6
2.0 x 106
868
1.09 x 10-4
1.14 x 10-4
1.02 x 10-4
4
2.0 x 106
1023
1.28 x 10-4
1.34 x 10-4
1.21 x 10-4
A
4
2.0 x 106
2253
2.82 x 10-4
2.90 x 10-4
2.70 x 10-4
44
A
4
1.0 x 106
2042
5.11 x 10-4
5.26 x 10-4
4.90 x 10-4
±5
2.7
B
4
2.0 x 106
105
1.31 x 10-5
1.54 x 10-5
1.12 x 10-5
±5
8.5
B
4
2.0 x 106
921
1.15 x 10-4
1.21 x 10-4
1.08 x 10-4
±5
12
B
4
2.0 x 106
1049
1.31 x 10-4
1.38 x 10-4
1.25 x 10-4
±5
28
B
4
2.0 x 106
2599
3.25 x 10-4
3.35 x 10-4
3.12 x 10-4
±5
44
B
4
1.0 x 106
2641
6.60 x 10-4
6.80 x 10-4
6.34 x 10-4
±5
2.7
C
4
2.0 x 106
95
1.19 x 10-5
1.40 x 10-5
9.98 x 10-6
±5
8.5
C
4
2.0 x 106
1016
1.27 x 10-4
1.33 x 10-4
1.19 x 10-4
±5
12
C
4
2.0 x 106
1139
1.42 x 10-4
1.49 x 10-4
1.35 x 10-4
±5
28
C
4
2.0 x 106
3197
4.00 x 10-4
4.08 x 10-4
3.88 x 10-4
±5
44
C
4
1.0 x 106
2610
6.53 x 10-4
6.72 x 10-4
6.26 x 10-4
±5
2.7
D
4
2.0 x 106
118
1.48 x 10-5
1.71 x 10-5
1.27 x 10-5
±5
8.5
D
4
2.0 x 106
1002
1.25 x 10-4
1.32 x 10-4
1.18 x 10-4
±5
12
D
4
2.0 x 106
1113
1.39 x 10-4
1.46 x 10-4
1.32 x 10-4
±5
28
D
4
2.0 x 106
2560
3.20 x 10-4
3.30 x 10-4
3.07 x 10-4
±5
44
D
4
1.0 x 106
1509
3.77 x 10-4
3.92 x 10-4
3.58 x 10-4
SUPPLY
VOLTAGE
(V)
LET
(MeV . cm2/mg)
±5
±5
±5
CHANNEL
NUMBER OF
RUNS
FLUENCE PER RUN
(PARTICLES/cm2)
A
4
2.0 x 106
8.5
A
4
±5
12
A
±5
28
±5
20
AN1785.0
October 17, 2012
Application Note 1785
TABLE 4. DATA OF CHANNEL CROSS SECTION OF THE ISL70417SEH REPRESENTED IN FIGURES 3 THROUGH 6
SUPPLY
VOLTAGE
(V)
LET
(MeV · cm2/mg)
CHANNEL
NUMBER OF
RUNS
FLUENCE PER RUN
(PARTICLES/cm2)
EVENTS
EVENT CS
(cm2)
90% CI UPPER
LIMIT (cm2)
90% CI LOWER
LIMIT
(cm2)
68
8.50 x 10-6
1.04E-05
6.97 x 10-6
±15
2.7
A
4
2.0 x 106
±15
8.5
A
4
2.0 x 106
599
7.49 x 10-5
7.94 x 10-5
6.96 x 10-5
±15
12
A
4
2.0 x 106
909
1.14 x 10-4
1.19 x 10-4
1.07 x 10-4
1909
2.39 x 10-4
2.46 x 10-4
2.29 x 10-4
±15
28
A
4
2.0 x 106
±15
44
A
4
1.0 x 106
1777
4.44 x 10-4
4.58 x 10-4
4.26 x 10-4
±15
2.7
B
4
2.0 x 106
50
6.25 x 10-6
7.87 x 10-6
4.94 x 10-6
795
9.94 x 10-5
1.05 x 10-4
9.34 x 10-5
±15
8.5
B
4
2.0 x 106
±15
12
B
4
2.0 x 106
946
1.18 x 10-4
1.24 x 10-4
1.11 x 10-4
±15
28
B
4
2.0 x 106
2010
2.51 x 10-4
2.59 x 10-4
2.41 x 10-4
2056
5.14 x 10-4
5.29 x 10-4
4.93 x 10-4
±15
44
B
4
1.0 x 106
±15
2.7
C
4
2.0 x 106
63
7.88 x 10-6
9.69 x 10-6
6.38 x 10-6
±15
8.5
C
4
2.0 x 106
877
1.10 x 10-4
1.15 x 10-4
1.03 x 10-4
±15
12
C
4
2.0 x 106
1164
1.46 x 10-4
1.51 x 10-4
1.38 x 10-4
±15
28
C
4
2.0 x 106
2677
3.35 x 10-4
3.45 x 10-4
3.21 x 10-4
±15
44
C
4
1.0 x 106
1574
3.94 x 10-4
4.09 x 10-4
3.74 x 10-4
±15
2.7
D
4
2.0 x 106
58
7.25 x 10-6
8.99 x 10-6
5.80 x 10-6
±15
8.5
D
4
2.0 x 106
686
8.58 x 10-5
9.09 x 10-5
7.97 x 10-5
±15
12
D
4
2.0 x 106
1099
1.37 x 10-4
1.44 x 10-4
1.31 x 10-4
2047
2.56 x 10-4
2.64 x 10-4
2.41 x 10-4
1069
2.67 x 10-4
2.81 x 10-4
2.54 x 10-4
±15
28
D
4
2.0 x 106
±15
44
D
4
1.0 x 106
21
AN1785.0
October 17, 2012
R31
DNP
IN-
J11
R36
C12
0
OPEN
R46
0
OPEN
R19
0
IN+C
DNP
C11
RINA+
IN1+
DNP
RGA+
RREFA+
RINA1+
R35
J12
10K
1
C13
OPEN
R45
RINA+
2
0
R41
0
IN+D
DNP
R29
R43
R9
10K
R26
J10
RREFA+
RGA+
FIGURE 61. ISL70417SEH SEE TEST BOARD SCHEMATIC
R61
OUT
J16
OUT
DNP
J15
DNP
R68
R69
DNP
C25
R50
R54
R66
100K
0
0
DNP
OPEN
C20
IN-D
RREFA-
D
RINA1+
0
R62
10K
R65
0
R57
8
IN+C
IN-C
OUTC
R53
C19
OUT 3
10
9
R49
100K
OPEN
+IN3
-IN3
VM
DNP
OUT 2
R40
RINA2-
RREFA-
C
IN1+
7
R42
RINA2-
-IN2
RINA-
IN-C
R38
DNP
RINA-
R25
OPEN
DNP
0
R13
DNP
J9
R4
IN-
C10
+IN2
6
IN+B
10K
R10
5
IN
ISL70417SEH
DNP
R18
11
OUT
OPEN
RGA+
DNP
0
12
V-
C24
OUTD
IN-D
IN+D
R58
R17
OPEN
+IN4
V+
0
RINA+
C9
R34
10K
R27
+IN1
4
DNP
R7
-IN1
3
13
C21
RREFA+
RINA1+
J8
R23
IN1+
IN+B
IN-B
OUTB
14
OUT 4
-IN4
2
OPEN
B
IN
OUT 1
C18
VP
1
OPEN
DNP
DNP
OPEN
R30
R22
0
DNP
C8
R12
DNP
R3
IN-
R8
OUTA
IN-A
IN+A
J14
Application Note 1785
J7
U1
IN-B
RREFA-
OPEN
RINA-
DNP
R16
R67
DNP
100K
10K
DNP
R55
C15
OPEN
0
R60
R47
R64
0
DNP
OPEN
R52
R70
100K
RGA+
R59
C22
DNP
R39
DNP
OPEN
OUT
VP
0.01UF
DNP
C23
J13
OUT
0.1UF
C5
R56
VM
IN+A
C14
C3
OUT
0.1UF C1
0
DNP
0
CLOSE TO PART
CLOSE TO PART
R63
0
OPEN
1UF
D1
R51
0
D2
R48
0
C26
C17
0
J1
J2
1UF
0
0.01UF
R15
2
R1
OPEN
C7
OPEN
C4
0
RINA+
DNP
22
1
R44
C16
R24
10K
C2
V+
OPEN
R5
R21
IN1+
RREFA+
RINA1+
J6
RREF
R37
R32
A
100K
DNP
DNP
2
OPEN
R33
R11
R28
DNP
DNP
DNP
C6
1
0
RINA2-
R2
IN-
V-
IN-A
RREFAR20
R6
J3
J4
10K
J5
REF1
RINA-
R14
AN1785.0
October 17, 2012
Application Note 1785
FIGURE 62. ISL70417SEH SEE TEST BOARD TOP VIEW
Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is
cautioned to verify that the Application Note or Technical Brief is current before proceeding.
For information regarding Intersil Corporation and its products, see www.intersil.com
23
AN1785.0
October 17, 2012
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