an1838

Application Note 1838
Authors: Kiran Bernard, Eric Thomson, Lawrence Pearce, Nick Vanvonno
Single Event Effects Testing of the ISL70444SEH, Quad
40V Radiation Hard Precision Operational Amplifiers
Introduction
SEE Results Objective
There are many phenomena that occur past Earth's
atmosphere that commercial integrated circuits do not
encounter. Among these, we have effects that can cause a
variety of transient and destructive effects in analog circuits;
these are termed Single Event Latch-up (SEL), Single Event
Burnout (SEB), and Single Event Transients (SET). Collectively
they are called Single Event Effects (SEE). SEE can lead to
system level failures including the disruption in normal
operation as well as permanent damage. For a device to be
deemed reliable under heavy ion environments, it should be
designed from the ground up with SEE Hardness in mind. It will
then undergo extensive SEE testing which then validates the
design. This report discusses the results of SEE testing for the
ISL70444SEH.
The objective of the SEE Testing was to evaluate the
ISL70444SEH's Single Event Transient (SET) behavior and its
susceptibility to destructive events induced by single event
effects such as Single Event Burnout (SEB).
Related Documents
• See FN8411, “ISL70444SEH datasheet”
• ISL70444SEH Radiation Report
Product Description
The ISL70444SEH features 4 low-power amplifiers optimized
to provide maximum dynamic range. This op amp features a
common mode input voltage range that goes all the way to the
rails and a rail-to-rail output voltage swing.
The ISL70444SEH also offers low power, low offset voltage,
and low temperature drift, making it ideal for applications
requiring both high DC accuracy and AC performance. This
amplifier is designed to operate over a single supply range of
2.7V to 40V or a split supply voltage range of ±1.35V to ±20V.
Applications for this amplifier include precision
instrumentation, data acquisition, precision power supply
controls, and process controls.
The ISL70444SEH is available in a 14 Ld hermetic ceramic
flatpack and operates over the extended temperature range of
-55°C to +125°C. A summary of the op amp features is as
follows:
• Rail-to-Rail on Input/Output (RRIO) Operation
• Wide Gain·Bandwidth Product . . . . . . . . . . . . . . . . . . . . 19MHz
• Low Input Offset Voltage . . . . . . . . . . . . . . . . . . . . . . . . 300µV
SEE Testing Facility
Testing for the ISL70444SEH was conducted at Texas A&M
University (TAMU) Cyclotron Institute, Heavy Ion Facility. This
facility is coupled with a K500 super-conducting cyclotron
which is capable of generating a wide range of test particles
with various energy, flux and fluence levels needed for
advanced radiation testing.
SEE Testing Procedure
The ISL70444SEH was tested for Single Event Burnout (SEB)
using Au ions at normal incidence (LET = 86.4 MeVocm2/mg)
with a case temperature of 125°C and Single Event Transient
with a gain of 10 using Ne, Ar, Kr, Ag, Pr and Au, and gain of 1
with Kr and Pr which provided the range of LET values needed
for the tests. In both cases the case temperature was 25°C.
The Device Under Test (DUT) was mounted in 14 lead dual
in-line packages with the lid removed. It was then placed in the
beam line and irradiated with heavy ions of the appropriate
species. The beam was directed onto the exposed die and the
beam flux, beam fluence and error in device outputs were
monitored. There were 8 parts in total, SN1 through SN4 were
used for SEB testing and SN5-SN8 were used for SET testing.
The testing of the ISL70444SEH was conducted remotely from
the control room at TAMU. Power to the DUT was supplied via
bench-top power supplies and connected via heavy gauge
stranded wires to minimize loss. The supply currents were
monitored along with device outputs. Supply currents were
monitored via digital ammeters and device outputs were
monitored via oscilloscope to help identify how the part
reacted to various SEE. Events were captured by triggering on
deviations in the output.
SEE Test Setup Diagrams
Figures 1 and 2 show the evaluation board setup that was
used during testing.
• Low Current Consumption (per amp) . . . . . . . . . . 1.1mA, Typ.
• Enhanced Large Signal SR. . . . . . . . . . . . . . . . . . . . . . .60V/µs
June 28, 2013
AN1838.0
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Copyright Intersil Americas LLC 2013. All Rights Reserved.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
Application Note 1838
Where:
VREF
100kΩ
+V
LET is the linear energy transfer in MeV•cm2/mg
+
1kΩ
ISL70444SEH
1V
CS is the SET cross section in cm2, expressed as a function of the
heavy ion LET.
100Ω
N is the total number of SET events
VOUT
F is the fluence in particles/cm2
‐
1kΩ
A value of 1/F is the assumed cross section when no event is
observed.
‐V
Single Event Burnout (SEB) Results
9kΩ
The first test in the sequence was to look for destructive events
due to SEB. A failure due to burnout was indicated by a
permanent change in the part's supply current after the beam
was turned off. If the supply current reverted back to its
pre-radiation value after a power cycle, the event was then
deemed as latch-up. The ISL70444SEH did not have any latch-up
events; this can be attributed to the SOI construction of the
process and therefore it is latch-up immune.
FIGURE 1. ISL70444SEH CONFIGURATION (GAIN OF 10)
VREF
100kΩ
1kΩ
+V
+
ISL70444SEH
1V
100Ω
VOUT
No burnout was observed for the ISL70444SEH when using Au
ions at normal incidence. Testing was performed on 4 parts at a
TC of +125°C using the schematic shown in Figure 1. The
common voltage at which each part passed to was ±21VSUPPLY.
SN1 and SN4 both passed to ±23V, while SN3 passed to ±22V
and SN2 passed to ±21V. Each part was started at ±18V and
stepped up in incrementally until they failed. All test runs were
run in a gain of 10 to a fluence of 2x106/cm2 with an input of
100mV applied to the non-inverting input of the amplifiers. After
each run, the functionality of the op amp was verified by
monitoring the outputs of all amplifiers with an oscilloscope. IDD
and IEE were recorded pre and post exposure and then summed
up, a ±5% delta (to allow for measurement repeatability) would
indicate a failure. Table 1 shows the SEB results for the
ISL70444SEH for a supply voltage of ±21V.
‐
‐V
100Ω
FIGURE 2. ISL70444SEH CONFIGURATION (GAIN OF 1)
The ISL70444SEH was tested under 2 conditions, gain of 10
(Figure 1) and gain of 1 (Figure 2). Under each condition, each
channel of the quad amplifier was configured identically and
VREF was left to float. A 100Ω series resistor was used to shield
the amplifier from cable capacitance. A more detailed board
schematic and layout of the evaluation board can be referenced
in Appendix A.
Cross Section Calculations
Cross sections (CS) are calculated as shown by Equation 1:
N
CS ( LET ) = --F
(EQ. 1)
TABLE 1. SEB RESULTS (FLUENCE = 2x106/cm2) WITH NO DESTRUCTIVE OR LATCH EVENTS; ALL PARTS PASSED TO VS = ±21V
PRE-EXPOSURE
POST EXPOSURE
SN
TEMP
(°C)
I- (mA)
I+ (mA)
I- (mA)
I+ (mA)
SEB/L
1
+125
8.92
8.56
8.94
8.57
PASS
2
+125
10.95
10.53
10.47
10.14
PASS
3
+125
7.41
7.04
7.39
7.02
PASS
4
+125
15.28
14.97
15.57
15.20
PASS
2
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Application Note 1838
Single Event Transient (SET) Results
(±1% of VOUT) for VS = ±1.35V and ±200mV (±1% of VOUT) for
VS = ±15V. The volts per division on each captured trace was
1V/div for VS = ±1.35V and 5V/div for VS = ±15V. During
post-processing, transient durations are defined as any voltage
transient in excess of ±10mV from VOUT. The time spent ±10mV
away from VOUT is then summed up and presented in histograms
in Figures 3 and 4. Positive and negative voltage deviations were
recorded separately from each other.
TEST SETUP (GAIN OF 1)
Two devices were tested at two different supply voltages,
VS = ±1.35V and VS = ±15V. The non-inverting inputs for all
amplifiers were set to 1V for VS = ±1.35V and 2V for VS = ±15V.
The outputs were monitored from the control room with four
LeCroy Oscilloscopes. Summary of the scope settings is as
follows:
Cross Section Results
Trigger Connections
The results shown in Tables 2 and 3 are the cross sectional
results for the 2 devices that were tested in unity gain at LET = 28
and 60MeV•cm2/mg. It appears that in this case the higher
supply voltage of ±15V had a lower cross section.
• Scope 1 triggered on Channel A
• Scope 2 triggered on Channel B
• Scope 3 triggered on Channel C
• Scope 4 triggered on Channel D
SET events were recorded whenever the output deviated from a
trigger window during beam exposure. The window was ±100mV
TABLE 2. SET CROSS SECTION RESULTS of ISL70444SEH IN UNITY GAIN (VS = ±1.5V); TRIGGER WINDOW = ±100mV
SUPPLY
(V)
SPECIES
LET
(MeV•cm2/mg)
ANGLE
(°)
CHANNEL
DEVICE
FLUENCE/RUN
(P/cm2)
TOTAL SET
EVENT CS
(cm2)
±1.5V
Kr
28
0
A
6
1.00E+06
502
5.02E-04
±1.5V
Pr
28
0
A
7
1.00E+06
502
5.02E-04
±1.5V
Kr
60
0
A
6
1.00E+06
541
5.41E-04
±1.5V
Pr
60
0
A
7
1.00E+06
678
6.78E-04
±1.5V
Kr
28
0
B
6
1.00E+06
533
5.33E-04
±1.5V
Pr
28
0
B
7
1.00E+06
538
5.38E-04
±1.5V
Kr
60
0
B
6
1.00E+06
680
6.80E-04
±1.5V
Pr
60
0
B
7
1.00E+06
714
7.14E-04
±1.5V
Kr
28
0
C
6
1.00E+06
334
3.34E-04
±1.5V
Pr
28
0
C
7
1.00E+06
294
2.94E-04
±1.5V
Kr
60
0
C
6
1.00E+06
371
3.71E-04
±1.5V
Pr
60
0
C
7
1.00E+06
323
3.23E-04
±1.5V
Kr
28
0
D
6
1.00E+06
478
4.78E-04
±1.5V
Pr
28
0
D
7
1.00E+06
449
4.49E-04
±1.5V
Kr
60
0
D
6
1.00E+06
534
5.34E-04
±1.5V
Pr
60
0
D
7
1.00E+06
500
5.00E-04
3
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Application Note 1838
TABLE 3. SET CROSS SECTION RESULTS of ISL70444SEH IN UNITY GAIN (VS = ±15V); TRIGGER WINDOW = ±200mV
SUPPLY
(V)
SPECIES
LET
(MeV•cm2/mg)
ANGLE
(°)
CHANNEL
DEVICE
FLUENCE/RUN
(P/cm2)
TOTAL SET
EVENT CS
(cm2)
±15
Kr
28
0
A
6
1.00E+06
355
3.55E-04
±15
Pr
28
0
A
7
1.00E+06
328
3.28E-04
±15
Kr
60
0
A
6
2.00E+06
1027
5.14E-04
±15
Pr
60
0
A
7
1.00E+06
629
6.29E-04
±15
Kr
28
0
B
6
1.00E+06
362
3.62E-04
±15
Pr
28
0
B
7
1.00E+06
316
3.16E-04
±15
Kr
60
0
B
6
1.00E+06
673
6.73E-04
±15
Pr
60
0
B
7
1.00E+06
620
6.20E-04
±15
Kr
28
0
C
6
1.00E+06
248
2.48E-04
±15
Pr
28
0
C
7
1.00E+06
254
2.54E-04
±15
Kr
60
0
C
6
1.00E+06
392
3.92E-04
±15
Pr
60
0
C
7
1.00E+06
340
3.40E-04
±15
Kr
28
0
D
6
1.00E+06
330
3.30E-04
±15
Pr
28
0
D
7
1.00E+06
309
3.09E-04
±15
Kr
60
0
D
6
1.00E+06
531
5.31E-04
±15
Pr
60
0
D
7
1.00E+06
464
4.64E-04
SET Characteristics
Figures 3 through 8 are histograms that describe the
characteristics of transients caused by SETs. Figures 3 and 4
describe the duration of the SETs at VS = ±1.35V and VS = ±15V
respectively. Figures 5 and 6 describe the maximum positive
voltage deviation from VOUT during an SET at VS = ±1.35V and
VS = ±15V respectively. Figures 7 and 8 describe the maximum
negative voltage deviation from VOUT during an SET at
VS = ±1.35V and VS = ±15V respectively. For VS = ±1.35V,
recovery time from SETs were always within 2µs. For VS = ±15V,
recovery time was much faster (≤400ns).
For the composite pictures in Figures 9 through 12 the first 200
captures at each LET and power supply setting were plotted on
top of each other to show an envelope of how the ISL70444SEH
reacts during SETs for LET = 28 and 60MeV•cm2/mg.
Transient Duration Histograms
200
300
LET 28
180
LET 28
LET 60
250
160
140
200
Number of Events
Number of Events
LET 60
120
100
80
150
100
60
40
50
20
0
0
Transient Duration
FIGURE 3. Transient Durations Caused By SETs (VS = ±1.35V) at
LET = 28 and 60MeV•cm2/mg with fluence of
2x106/cm2; SETs are defined as a pulse in excess of
±10mV from VOUT during post-processing
4
Transient Duration
FIGURE 4. Transient Durations Caused By SETs (VS = ±15V) at
LET = 28 and 60 MeV•cm2/mg with fluence of
2x106/cm2; SETs are defined as a pulse in excess of
±10mV from VOUT during post-processing
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Application Note 1838
Positive Voltage Deviation Histograms
100
400
LET 28
90
LET 28
LET 60
LET 60
350
80
300
60
Number of Events
Number of Events
70
50
40
250
200
150
30
100
20
10
50
0
0
Max Positive Transient Levels (V)
Max Positive Transient Levels (V)
FIGURE 6. Max Positive Transient Voltage from VOUT = +2V caused
by SETs (VS = ±15V); LET = 28 and 60MeV•cm2/mg
with fluence of 2x106/cm2
FIGURE 5. Max Positive Transient Voltage from VOUT = +1V caused
by SETs (VS = ±1.35V); LET = 28 and 60MeV•cm2/mg
with fluence of 2x106/cm2
Negative Voltage Deviation Histograms
200
400
LET 28
180
LET 60
LET 28
LET 60
350
160
300
Number of Events
Number of Events
140
120
100
80
250
200
150
60
100
40
50
20
0
0
Max Negative Transient Levels (V)
Max Negative Transient Levels (V)
FIGURE 7. Max Negative Transient Voltage from VOUT = +1V caused
by SETs (VS = ±1.35V); LET = 28 and 60MeV•cm2/mg
with fluence of 2x106/cm2
FIGURE 8. Max Negative Transient Voltage from VOUT = +2V caused
by SETs (VS = ±15V); LET = 28 and 60MeV•cm2/mg
with fluence of 2x106/cm2
SET Composite Plots (Unity Gain)
FIGURE 9. LET = 28 MeV •cm2/mg (V S = ±1.35V)
5
FIGURE 10. LET = 28 MeV •cm 2/mg (V S = ±15V)
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Application Note 1838
SET Composite Plots (Unity Gain) (Continued)
FIGURE 11. LET = 60 MeV •cm 2/mg (V S = ±1.35V)
FIGURE 12. LET = 60 MeV •cm 2/mg (V S = ±15V)
TEST SETUP (GAIN OF 10)
CHANNEL CONNECTION ON ALL SCOPES (VS = ±15V)
There is a definite advantage for high speed op amps in
applications that use gains greater than 1 as they still provide
ample bandwidth comparatively while in a gained configuration.
As most applications tend to use high speed op amps with gains
higher than 1, a worst case analysis was studied at several more
SETs with ACL = 10. For this worst case analysis, SETs were
defined as a ±1V deviation at VS = ±15V and ±200mV for
VS = ±1.35V to showcase the ultra fast recovery time of the
ISL70444SEH under drastic changes (≤5µs in all cases). During
post-processing, transient durations are defined as any voltage
transient that crosses ±10mV from VOUT. The time spent ±10mV
away from VOUT is then summed up and presented in histograms
in Figures 24 and 27 for their respective test conditions. Positive
and negative voltage deviations were recorded separately from
each other illustrated in Figures 22, 23, 25 and 26.
• CH1 through CH4 = 5V/div (OUTA through OUTD)
TRIGGER CONNECTIONS
• Scope 1 triggered on Channel A
• Scope 2 triggered on Channel B
• Scope 3 triggered on Channel C
• Scope 4 triggered on Channel D
Unlike other Intersil radiation tolerant circuits, the ISL70444SEH
was not designed with Single Event Transient mitigation. The
best approach to characterize the SET response is to represent
the data on a LET threshold plot (shown in Figure 13).
As it can be seen, VS = ±15V has a lower SET cross section across
all tested LET levels compared to VS = ±1.35V. The data
represented in Figure 13 is shown in tabular form in Table 4.
0.0020
0.0018
CROSS SECTION (cm2)
The non-inverting inputs for all amplifiers were set to 1V. The
outputs were monitored from the control room with four LeCroy
Oscilloscopes. Summary of the scope settings is as follows:
Cross Section Results
0.0016
0.0014
0.0012
0.0010
0.0008
0.0006
0.0004
Vs = ±15V
0.0002
Vs = ±15V
0
0
20
40
60
80
LET (MeV•mg/cm2)
FIGURE 13. SET CROSS SECTION vs LET vs SUPPLY VOLTAGE
CHANNEL CONNECTION ON ALL SCOPES (VS = ±1.35V)
• CH1 through CH4 = 1V/div (OUTA through OUTD)
6
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Application Note 1838
TABLE 4. DETAILS OF LET THRESHOLD PLOT; TRIGGER WINDOWS DEFINED IN TEST SETUP (GAIN OF 10)
SUPPLY
(V)
SPECIES
LET
(MeV•cm2/mg)
ANGLE
(°)
RUNS
FLUENCE/RUN
(P/cm2)
TOTAL SET
EVENT CS
(cm2)
±1.35V
Ne
2.7
0
4
2.00E+06
126
1.58E-05
±1.35V
Ar
8.5
0
4
2.00E+06
2789
3.49E-04
±1.35V
Kr
28
0
4
2.00E+06
9385
1.17E-03
±1.35V
Ag
43
0
4
2.00E+06
11121
1.39E-03
±1.35V
Pr
60
0
4
2.00E+06
12015
1.50E-03
±1.35V
Au
86
0
4
2.00E+06
14257
1.78E-03
±15.0V
Ne
2.7
0
4
2.00E+06
19
2.38E-06
±15.0V
Ar
8.5
0
4
2.00E+06
693
8.66E-05
±15.0V
Kr
28
0
4
2.00E+06
4501
5.63E-04
±15.0V
Ag
43
0
4
2.00E+06
6981
8.73E-04
±15.0V
Pr
60
0
4
2.00E+06
9119
1.14E-03
±15.0V
Au
86
0
4
2.00E+06
10974
1.37E-03
Figures 14 through 17 provide the cross section vs LET on a
channel-by-channel basis for VS = ±1.35V, while Figures 18
through 21 provide the cross section vs LET channel-by-channel
for VS = ±15V. At each given LET, the cross section for each of the
4 devices tested are provided along with the summed average
cross section of all devices shown in red for VS = ±1.35V and blue
for VS = ±15V. The tabular data for Figures 14 through 21 is
provided for convenience in Tables 5 through 12.
respectively caused by SETs vs LET at VS = ±15V. Figures 25, 26,
and 27 are identical except with supplies at VS = ±1.35V.
For the composite pictures in Figures 28 through 39 the first 200
captures at each LET and power supply setting were plotted on
top of each other to show an envelope of how the ISL70444SEH
reacts during SETs for LET = 2.7, 8.5, 28, 43, 60 and 86
MeV•cm2/mg.
SET Characteristics
Figures 22, 23 and 24 describe the positive transient voltage
spikes, negative transient voltage spikes and transient durations
7.0E-04
7.0E-04
6.0E-04
6.0E-04
CROSS SECTION (cm2)
CROSS SECTION (cm2)
Cross Section Results: ±1.35V (Channel-by-Channel)
5.0E-04
4.0E-04
3.0E-04
Mean
Dev5
Dev6
Dev7
Dev8
2.0E-04
1.0E-04
0.0E+00
0
10
20
30
40
50
60
70
80
90
LET (MeV•mg/cm2)
FIGURE 14. Channel A SET Cross Section vs LET (VS = ±1.35V)
ACL = 10
7
5.0E-04
4.0E-04
3.0E-04
1.0E-04
0.0E+00
100
Mean
Dev5
Dev6
Dev7
Dev8
2.0E-04
0
10
20
30
40
50
60
70
80
90
100
LET (MeV•mg/cm2)
FIGURE 15. Channel A SET Cross Section vs LET (VS = ±1.35V)
ACL = 10
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June 28, 2013
Application Note 1838
7.0E-04
7.0E-04
6.0E-04
6.0E-04
CROSS SECTION (cm2)
CROSS SECTION (cm2)
Cross Section Results: ±1.35V (Channel-by-Channel)
5.0E-04
4.0E-04
3.0E-04
Mean
Dev5
Dev6
Dev7
Dev8
2.0E-04
1.0E-04
0.0E+00
0
10
20
30
40
50
60
70
80
90
5.0E-04
4.0E-04
3.0E-04
1.0E-04
0.0E+00
0
100
Mean
Dev5
Dev6
Dev7
Dev8
2.0E-04
10
20
LET (MeV•mg/cm2)
FIGURE 16. Channel C SET Cross Section vs LET (VS = ±1.35V)
ACL = 10
30
40
50
60
70
LET (MeV•mg/cm2)
80
90
100
FIGURE 17. Channel D SET Cross Section vs LET (VS = ±1.35V)
ACL = 10
5.0E-04
5.0E-04
4.0E-04
4.0E-04
3.0E-04
Mean
Dev5
Dev6
Dev7
Dev8
90
100
2.0E-04
1.0E-04
0.0E+00
0
10
20
30
40
50
60
70
80
CROSS SECTION (cm2)
CROSS SECTION (cm2)
Cross Section Results: ±15V (Channel-by-Channel)
3.0E-04
2.0E-04
Mean
Dev5
Dev6
Dev7
Dev8
1.0E-04
0.0E+00
0
10
20
30
LET (MeV•mg/cm2)
5.0E-04
5.0E-04
4.0E-04
4.0E-04
3.0E-04
2.0E-04
Mean
Dev5
Dev6
Dev7
Dev8
1.0E-04
0
10
20
30
40
50
60
70
80
90
LET (MeV•mg/cm2)
FIGURE 20. Channel C SET Cross Section vs LET (VS = ±15V)
ACL = 10
8
50
60
70
80
90
100
FIGURE 19. Channel B SET Cross Section vs LET (VS = ±15V)
ACL = 10
CROSS SECTION (cm2)
CROSS SECTION (cm2)
FIGURE 18. Channel A SET Cross Section vs LET (VS = ±15V)
ACL = 10
0.0E+00
40
LET (MeV•mg/cm2)
100
3.0E-04
2.0E-04
Mean
Dev5
Dev6
Dev7
Dev8
1.0E-04
0.0E+00
0
10
20
30
40
50
60
70
80
90
100
LET (MeV•mg/cm2)
FIGURE 21. Channel D SET Cross Section vs LET (VS = ±15V)
ACL = 10
AN1838.0
June 28, 2013
Application Note 1838
Tabular Cross Section Results: ±1.35V, ACL = 10 (Channel-by-Channel)
TABLE 5. DATA OF CHANNEL CROSS SECTION OF ISL70444SEH FOR VS = ±1.35V (DEVICE 5)
SUPPLY
(V)
SPECIES
LET
(MeV•cm2/mg)
CH
DEVICE
FLUENCE/RUN
(P/cm2)
EVENTS
EVENT CS
(cm2)
±1.35
Ne
2.7
A
5
2.00E+06
3
1.50E-06
±1.35
Ar
8.5
A
5
2.00E+06
141
7.05E-05
±1.35
Kr
28
A
5
2.00E+06
531
2.66E-04
±1.35
Ag
43
A
5
2.00E+06
639
3.20E-04
±1.35
Pr
60
A
5
2.00E+06
759
3.80E-04
±1.35
Au
86
A
5
2.00E+06
839
4.20E-04
±1.35
Ne
2.7
B
5
2.00E+06
8
4.00E-06
±1.35
Ar
8.5
B
5
2.00E+06
202
1.01E-04
±1.35
Kr
28
B
5
2.00E+06
650
3.25E-04
±1.35
Ag
43
B
5
2.00E+06
744
3.72E-04
±1.35
Pr
60
B
5
2.00E+06
768
3.84E-04
±1.35
Au
86
B
5
2.00E+06
963
4.82E-04
±1.35
Ne
2.7
C
5
2.00E+06
12
6.00E-06
±1.35
Ar
8.5
C
5
2.00E+06
238
1.19E-04
±1.35
Kr
28
C
5
2.00E+06
477
2.39E-04
±1.35
Ag
43
C
5
2.00E+06
632
3.16E-04
±1.35
Pr
60
C
5
2.00E+06
599
3.00E-04
±1.35
Au
86
C
5
2.00E+06
570
2.85E-04
±1.35
Ne
2.7
D
5
2.00E+06
9
4.50E-06
±1.35
Ar
8.5
D
5
2.00E+06
128
6.40E-05
±1.35
Kr
28
D
5
2.00E+06
764
3.82E-04
±1.35
Ag
43
D
5
2.00E+06
659
3.30E-04
±1.35
Pr
60
D
5
2.00E+06
770
3.85E-04
±1.35
Au
86
D
5
2.00E+06
1062
5.31E-04
9
AN1838.0
June 28, 2013
Application Note 1838
TABLE 6. DATA OF CHANNEL CROSS SECTION OF ISL70444SEH FOR VS = ±1.35V (DEVICE 6)
SUPPLY
(V)
SPECIES
LET
(MeV•cm2/mg)
CH
DEVICE
FLUENCE/RUN
(P/cm2)
EVENTS
EVENT CS
(cm2)
±1.35
Ne
2.7
A
6
2.00E+06
1
5.00E-07
±1.35
Ar
8.5
A
6
2.00E+06
151
7.55E-05
±1.35
Kr
28
A
6
2.00E+06
538
2.69E-04
±1.35
Ag
43
A
6
2.00E+06
637
3.19E-04
±1.35
Pr
60
A
6
2.00E+06
761
3.81E-04
±1.35
Au
86
A
6
2.00E+06
855
4.28E-04
±1.35
Ne
2.7
B
6
2.00E+06
3
1.50E-06
±1.35
Ar
8.5
B
6
2.00E+06
163
8.15E-05
±1.35
Kr
28
B
6
2.00E+06
588
2.94E-04
±1.35
Ag
43
B
6
2.00E+06
712
3.56E-04
±1.35
Pr
60
B
6
2.00E+06
870
4.35E-04
±1.35
Au
86
B
6
2.00E+06
1184
5.92E-04
±1.35
Ne
2.7
C
6
2.00E+06
17
8.50E-06
±1.35
Ar
8.5
C
6
2.00E+06
241
1.21E-04
±1.35
Kr
28
C
6
2.00E+06
496
2.48E-04
±1.35
Ag
43
C
6
2.00E+06
587
2.94E-04
±1.35
Pr
60
C
6
2.00E+06
594
2.97E-04
±1.35
Au
86
C
6
2.00E+06
653
3.27E-04
±1.35
Ne
2.7
D
6
2.00E+06
1
5.00E-07
±1.35
Ar
8.5
D
6
2.00E+06
126
6.30E-05
±1.35
Kr
28
D
6
2.00E+06
533
2.67E-04
±1.35
Ag
43
D
6
2.00E+06
692
3.46E-04
±1.35
Pr
60
D
6
2.00E+06
783
3.92E-04
±1.35
Au
86
D
6
2.00E+06
1276
6.38E-04
10
AN1838.0
June 28, 2013
Application Note 1838
TABLE 7. DATA OF CHANNEL CROSS SECTION OF ISL70444SEH FOR VS = ±1.35V (DEVICE 7)
SUPPLY
(V)
SPECIES
LET
(MeV•cm2/mg)
CH
DEVICE
FLUENCE/RUN
(P/cm2)
EVENTS
EVENT CS
(cm2)
±1.35
Ne
2.7
A
7
2.00E+06
6
3.00E-06
±1.35
Ar
8.5
A
7
2.00E+06
153
7.65E-05
±1.35
Kr
28
A
7
2.00E+06
510
2.55E-04
±1.35
Ag
43
A
7
2.00E+06
645
3.23E-04
±1.35
Pr
60
A
7
2.00E+06
773
3.87E-04
±1.35
Au
86
A
7
2.00E+06
796
3.98E-04
±1.35
Ne
2.7
B
7
2.00E+06
5
2.50E-06
±1.35
Ar
8.5
B
7
2.00E+06
175
8.75E-05
±1.35
Kr
28
B
7
2.00E+06
658
3.29E-04
±1.35
Ag
43
B
7
2.00E+06
879
4.40E-04
±1.35
Pr
60
B
7
2.00E+06
808
4.04E-04
±1.35
Au
86
B
7
2.00E+06
1022
5.11E-04
±1.35
Ne
2.7
C
7
2.00E+06
18
9.00E-06
±1.35
Ar
8.5
C
7
2.00E+06
229
1.15E-04
±1.35
Kr
28
C
7
2.00E+06
495
2.48E-04
±1.35
Ag
43
C
7
2.00E+06
603
3.02E-04
±1.35
Pr
60
C
7
2.00E+06
575
2.88E-04
±1.35
Au
86
C
7
2.00E+06
559
2.80E-04
±1.35
Ne
2.7
D
7
2.00E+06
5
2.50E-06
±1.35
Ar
8.5
D
7
2.00E+06
113
5.65E-05
±1.35
Kr
28
D
7
2.00E+06
703
3.52E-04
±1.35
Ag
43
D
7
2.00E+06
973
4.87E-04
±1.35
Pr
60
D
7
2.00E+06
820
4.10E-04
±1.35
Au
86
D
7
2.00E+06
1122
5.61E-04
11
AN1838.0
June 28, 2013
Application Note 1838
TABLE 8. DATA OF CHANNEL CROSS SECTION OF ISL70444SEH FOR VS = ±1.35V (DEVICE 8)
SUPPLY
(V)
SPECIES
LET
(MeV•cm2/mg)
CH
DEVICE
FLUENCE/RUN
(P/cm2)
EVENTS
EVENT CS
(cm2)
±1.35
Ne
2.7
A
8
2.00E+06
4
2.00E-06
±1.35
Ar
8.5
A
8
2.00E+06
164
8.20E-05
±1.35
Kr
28
A
8
2.00E+06
578
2.89E-04
±1.35
Ag
43
A
8
2.00E+06
644
3.22E-04
±1.35
Pr
60
A
8
2.00E+06
743
3.72E-04
±1.35
Au
86
A
8
2.00E+06
873
4.37E-04
±1.35
Ne
2.7
B
8
2.00E+06
15
7.50E-06
±1.35
Ar
8.5
B
8
2.00E+06
191
9.55E-05
±1.35
Kr
28
B
8
2.00E+06
535
2.68E-04
±1.35
Ag
43
B
8
2.00E+06
720
3.60E-04
±1.35
Pr
60
B
8
2.00E+06
854
4.27E-04
±1.35
Au
86
B
8
2.00E+06
1121
5.61E-04
±1.35
Ne
2.7
C
8
2.00E+06
15
7.50E-06
±1.35
Ar
8.5
C
8
2.00E+06
237
1.19E-04
±1.35
Kr
28
C
8
2.00E+06
537
2.69E-04
±1.35
Ag
43
C
8
2.00E+06
610
3.05E-04
±1.35
Pr
60
C
8
2.00E+06
643
3.22E-04
±1.35
Au
86
C
8
2.00E+06
615
3.08E-04
±1.35
Ne
2.7
D
8
2.00E+06
4
2.00E-06
±1.35
Ar
8.5
D
8
2.00E+06
137
6.85E-05
±1.35
Kr
28
D
8
2.00E+06
792
3.96E-04
±1.35
Ag
43
D
8
2.00E+06
745
3.73E-04
±1.35
Pr
60
D
8
2.00E+06
895
4.48E-04
±1.35
Au
86
D
8
2.00E+06
1180
5.90E-04
12
AN1838.0
June 28, 2013
Application Note 1838
Tabular Cross Section Results: ±15V, ACL = 10 (Channel-by-Channel)
TABLE 9. DATA OF CHANNEL CROSS SECTION OF ISL70444SEH FOR VS = ±15V (DEVICE 5)
SUPPLY
(V)
SPECIES
LET
(MeV•cm2/mg)
CH
DEVICE
FLUENCE/RUN
(P/cm2)
EVENTS
EVENT CS
(cm2)
±15
Ne
2.7
A
5
2.00E+06
4
2.00E-06
±15
Ar
8.5
A
5
2.00E+06
36
1.80E-05
±15
Kr
28
A
5
2.00E+06
270
1.35E-04
±15
Ag
43
A
5
2.00E+06
359
1.80E-04
±15
Pr
60
A
5
2.00E+06
574
2.87E-04
±15
Au
86
A
5
2.00E+06
685
3.43E-04
±15
Ne
2.7
B
5
2.00E+06
4
2.00E-06
±15
Ar
8.5
B
5
2.00E+06
40
2.00E-05
±15
Kr
28
B
5
2.00E+06
300
1.50E-04
±15
Ag
43
B
5
2.00E+06
376
1.88E-04
±15
Pr
60
B
5
2.00E+06
621
3.11E-04
±15
Au
86
B
5
2.00E+06
769
3.85E-04
±15
Ne
2.7
C
5
2.00E+06
0
0.00E+00
±15
Ar
8.5
C
5
2.00E+06
44
2.20E-05
±15
Kr
28
C
5
2.00E+06
229
1.15E-04
±15
Ag
43
C
5
2.00E+06
348
1.74E-04
±15
Pr
60
C
5
2.00E+06
416
2.08E-04
±15
Au
86
C
5
2.00E+06
424
2.12E-04
±15
Ne
2.7
D
5
2.00E+06
0
0.00E+00
±15
Ar
8.5
D
5
2.00E+06
41
2.05E-05
±15
Kr
28
D
5
2.00E+06
297
1.49E-04
±15
Ag
43
D
5
2.00E+06
410
2.05E-04
±15
Pr
60
D
5
2.00E+06
572
2.86E-04
±15
Au
86
D
5
2.00E+06
725
3.63E-04
13
AN1838.0
June 28, 2013
Application Note 1838
TABLE 10. DATA OF CHANNEL CROSS SECTION OF ISL70444SEH FOR VS = ±15V (DEVICE 6)
SUPPLY
(V)
SPECIES
LET
(MeV•cm2/mg)
CH
DEVICE
FLUENCE/RUN
(P/cm2)
EVENTS
EVENT CS
(cm2)
±15
Ne
2.7
A
6
2.00E+06
0
0.00E+00
±15
Ar
8.5
A
6
2.00E+06
43
2.15E-05
±15
Kr
28
A
6
2.00E+06
287
1.44E-04
±15
Ag
43
A
6
2.00E+06
437
2.19E-04
±15
Pr
60
A
6
2.00E+06
575
2.88E-04
±15
Au
86
A
6
2.00E+06
693
3.47E-04
±15
Ne
2.7
B
6
2.00E+06
0
0.00E+00
±15
Ar
8.5
B
6
2.00E+06
46
2.30E-05
±15
Kr
28
B
6
2.00E+06
300
1.50E-04
±15
Ag
43
B
6
2.00E+06
478
2.39E-04
±15
Pr
60
B
6
2.00E+06
676
3.38E-04
±15
Au
86
B
6
2.00E+06
765
3.83E-04
±15
Ne
2.7
C
6
2.00E+06
3
1.50E-06
±15
Ar
8.5
C
6
2.00E+06
60
3.00E-05
±15
Kr
28
C
6
2.00E+06
232
1.16E-04
±15
Ag
43
C
6
2.00E+06
357
1.79E-04
±15
Pr
60
C
6
2.00E+06
448
2.24E-04
±15
Au
86
C
6
2.00E+06
442
2.21E-04
±15
Ne
2.7
D
6
2.00E+06
3
1.50E-06
±15
Ar
8.5
D
6
2.00E+06
42
2.10E-05
±15
Kr
28
D
6
2.00E+06
304
1.52E-04
±15
Ag
43
D
6
2.00E+06
459
2.30E-04
±15
Pr
60
D
6
2.00E+06
620
3.10E-04
±15
Au
86
D
6
2.00E+06
792
3.96E-04
14
AN1838.0
June 28, 2013
Application Note 1838
TABLE 11. DATA OF CHANNEL CROSS SECTION OF ISL70444SEH for VS = ±15V (DEVICE 7)
SUPPLY
(V)
SPECIES
LET
(MeV•cm2/mg)
CH
DEVICE
FLUENCE/RUN
(P/cm2)
EVENTS
EVENT CS
(cm2)
±15
Ne
2.7
A
7
2.00E+06
0
0.00E+00
±15
Ar
8.5
A
7
2.00E+06
48
2.40E-05
±15
Kr
28
A
7
2.00E+06
313
1.57E-04
±15
Ag
43
A
7
2.00E+06
420
2.10E-04
±15
Pr
60
A
7
2.00E+06
588
2.94E-04
±15
Au
86
A
7
2.00E+06
701
3.51E-04
±15
Ne
2.7
B
7
2.00E+06
2
1.00E-06
±15
Ar
8.5
B
7
2.00E+06
40
2.00E-05
±15
Kr
28
B
7
2.00E+06
299
1.50E-04
±15
Ag
43
B
7
2.00E+06
452
2.26E-04
±15
Pr
60
B
7
2.00E+06
632
3.16E-04
±15
Au
86
B
7
2.00E+06
721
3.61E-04
±15
Ne
2.7
C
7
2.00E+06
0
0.00E+00
±15
Ar
8.5
C
7
2.00E+06
45
2.25E-05
±15
Kr
28
C
7
2.00E+06
249
1.25E-04
±15
Ag
43
C
7
2.00E+06
388
1.94E-04
±15
Pr
60
C
7
2.00E+06
455
2.28E-04
±15
Au
86
C
7
2.00E+06
442
2.21E-04
±15
Ne
2.7
D
7
2.00E+06
0
0.00E+00
±15
Ar
8.5
D
7
2.00E+06
40
2.00E-05
±15
Kr
28
D
7
2.00E+06
304
1.52E-04
±15
Ag
43
D
7
2.00E+06
453
2.27E-04
±15
Pr
60
D
7
2.00E+06
595
2.98E-04
±15
Au
86
D
7
2.00E+06
814
4.07E-04
15
AN1838.0
June 28, 2013
Application Note 1838
TABLE 12. DATA OF CHANNEL CROSS SECTION OF ISL70444SEH for VS = ±15V (DEVICE 8)
SUPPLY
(V)
SPECIES
LET
(MeV•cm2/mg)
CH
DEVICE
FLUENCE/RUN
(P/cm2)
EVENTS
EVENT CS
(cm2)
±15
Ne
2.7
A
8
2.00E+06
1
5.00E-07
±15
Ar
8.5
A
8
2.00E+06
37
1.85E-05
±15
Kr
28
A
8
2.00E+06
266
1.33E-04
±15
Ag
43
A
8
2.00E+06
510
2.55E-04
±15
Pr
60
A
8
2.00E+06
682
3.41E-04
±15
Au
86
A
8
2.00E+06
785
3.93E-04
±15
Ne
2.7
B
8
2.00E+06
1
5.00E-07
±15
Ar
8.5
B
8
2.00E+06
50
2.50E-05
±15
Kr
28
B
8
2.00E+06
315
1.58E-04
±15
Ag
43
B
8
2.00E+06
577
2.89E-04
±15
Pr
60
B
8
2.00E+06
788
3.94E-04
±15
Au
86
B
8
2.00E+06
866
4.33E-04
±15
Ne
2.7
C
8
2.00E+06
0
0.00E+00
±15
Ar
8.5
C
8
2.00E+06
52
2.60E-05
±15
Kr
28
C
8
2.00E+06
238
1.19E-04
±15
Ag
43
C
8
2.00E+06
428
2.14E-04
±15
Pr
60
C
8
2.00E+06
477
2.39E-04
±15
Au
86
C
8
2.00E+06
481
2.41E-04
±15
Ne
2.7
D
8
2.00E+06
1
5.00E-07
±15
Ar
8.5
D
8
2.00E+06
29
1.45E-05
±15
Kr
28
D
8
2.00E+06
298
1.49E-04
±15
Ag
43
D
8
2.00E+06
529
2.65E-04
±15
Pr
60
D
8
2.00E+06
700
3.50E-04
±15
Au
86
D
8
2.00E+06
869
4.35E-04
16
AN1838.0
June 28, 2013
Application Note 1838
Voltage Deviation Histograms: ±15V
300
250
LET 2.7
LET 8.4
LET 28.3
LET 43
LET 60
LET 86
250
200
LET 2.7
LET 8.4
LET 28.3
LET 43
LET 60
LET 86
Number of Events
Number of Events
200
150
150
100
100
50
50
0
0
Max Negative Transient Levels (V)
Max Positive Transient Levels (V)
FIGURE 23. Max Negative Voltage Transients from VOUT = +1V
caused by SETs (VS = ±15V, ACL = 10), Fluence was run
at 2x106/cm2
FIGURE 22. Max Positive Voltage Transients from VOUT = +1V caused
by SETs (VS = ±15V, ACL = 10), Fluence was run at
2x106/cm2
Transient Deviation Histogram: ±15V
160
140
LET 2.7
LET 8.4
LET 28.3
LET 43
LET 60
LET 86
Numer of Events
120
100
80
60
40
20
0
100ns 200ns 300ns 400ns 500ns 600ns 700ns 800ns 900ns
1μs
2μs
3μs
4μs
5μs
6μs
7μs
8μs
9μs
Transient Duration
FIGURE 24. Max Transient Duration caused by SETs (V S = ±15V, ACL = 10), Fluence was run at 2x10 6/cm 2
Voltage Deviation Histograms: ±1.35V
70
60
LET 2.7
LET 8.4
LET 28.3
LET 43
LET 60
LET 86
100
90
80
LET 8.4
LET 28.3
LET 43
LET 60
LET 86
70
Number of Events
Number of Events
50
LET 2.7
40
30
60
50
40
30
20
20
10
10
0
0
Max Positive Transient Levels (V)
FIGURE 25. Max Positive Voltage Transients from VOUT = +1V caused
by SETs (VS = ±1.35V, ACL = 10), Fluence was run at
2x106/cm2
17
Max Negative Transient Levels (V)
FIGURE 26. Max Negative Voltage Transients from VOUT = +1V
caused by SETs (VS = ±15V, ACL = 10), Fluence was run
at 2x106/cm2
AN1838.0
June 28, 2013
Application Note 1838
Transient Deviation Histogram: ±1.35V
180
160
140
LET 2.7
LET 8.4
LET 28.3
LET 43
LET 60
LET 86
Numer of Events
120
100
80
60
40
20
0
Transient Duration
FIGURE 27. Max Transient Duration caused by SETs (VS = ±1.35V, ACL = 10), Fluence was run at 2x10 6/cm 2
SET Composite Plots (Gain = 10)
FIGURE 28. LET = 2.7 MeV•cm2/mg (VS = ±1.35V); Fluence was run
at 2x106 /cm2
FIGURE 30. LET = 8.4 MeV•cm2/mg (VS = ±1.35V); Fluence was run
at 2x106 /cm2
18
FIGURE 29. LET = 2.7 MeV•cm2/mg (VS = ±15V); Fluence was run at
2x106 /cm2
FIGURE 31. LET = 8.4 MeV•cm2/mg (VS = ±15V); Fluence was run at
2x106 /cm2
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June 28, 2013
Application Note 1838
SET Composite Plots (Gain = 10) (Continued)
FIGURE 32. LET = 28.3 MeV•cm2/mg (VS = ±1.35V); Fluence was
run at 2x106 /cm2
FIGURE 33. LET = 28.3 MeV•cm2/mg (VS = ±15V); Fluence was run
at 2x106 /cm2
FIGURE 34. LET = 43 MeV•cm2/mg (VS = ±1.35V); Fluence was run
at 2x106 /cm2
FIGURE 35. LET = 43 MeV•cm2/mg (VS = ±15V); Fluence was run at
2x106 /cm2
FIGURE 36. LET = 60 MeV•cm2/mg (VS = ±1.35V); Fluence was run
at 2x106 /cm2
FIGURE 37. LET = 60 MeV•cm2/mg (VS = ±15V); Fluence was run at
2x106 /cm2
19
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Application Note 1838
SET Composite Plots (Gain = 10) (Continued)
FIGURE 38. LET = 86 MeV•cm2/mg (VS = ±1.35V); Fluence was run
at 2x106 /cm2
20
FIGURE 39. LET = 86 MeV•cm2/mg (VS = ±15V); Fluence was run at
2x106 /cm2
AN1838.0
June 28, 2013
0
C12
R46
0
OPEN
DNP
0
OPEN
R19
IN+C
0
DNP
C11
RINA+
R35
J12
IN1+
10K
1
C13
OPEN
RGA+
R45
RINA+
2
0
R41
IN+D
0
R43
R29
DNP
R9
10K
RREFA+
RINA1+
RREFA+
R26
J10
RGA+
DNP
DNP
R68
DNP
OUT
DNP
J15
R69
DNP
IN+C
IN-C
OUTC
DNP
0
R57
R65
0
C19
OPEN
R66
0
0
J16
DNP
R54
R70
R50
100K
DNP
8
R53
C20
R36
R38
J11
IN-
IN-D
RREFA-
10K
D
RINA1+
9
VM
R49
100K
OPEN
OUT 3
IN
DNP
OUT 2
R40
RINA2-
R31
DNP
C
IN1+
7
RINAIN-C
DNP
OPEN
RINA2-
-IN2
ISL70444SEH
RREFAR25
C10
0
DNP
DNP
R4
R10
R13
J9
+IN2
6
RGA+
RINA-
10K
IN-
DNP
R23
R18
+IN3
-IN3
10
5
IN+B
0
11
C25
R17
OPEN
12
V-
V+
0
RINA+
C9
R34
10K
DNP
IN1+
+IN4
OUT
OPEN
R58
RREFA+
R27
R7
+IN1
OUTD
IN-D
IN+D
C21
RINA1+
-IN1
13
OPEN
IN+B
IN-B
OUTB
B
J8
4
IN
14
C18
VP
3
OUT 4
-IN4
OUT 1
OPEN
DNP
R22
R12
DNP
R3
DNP
2
OPEN
OPEN
R30
DNP
0
IN-
C24
RREFA-
R42
C8
DNP
R8
DNP
J7
U1
1
R60
OPEN
IN-B
OUTA
IN-A
IN+A
J14
OUT
Application Note 1838
RINA-
R67
R64
0
R61
100K
R47
R16
DNP
DNP
R52
C22
R39
100K
10K
R59
R55
C15
OPEN
C14
OPEN
VP
R62
R21
J1
J2
OPEN
RGA+
OUT
0.01UF
R56
0
OPEN
0.1UF
C5
C23
IN+A
J13
OUT
VM
0.01UF
R15
2
C3
OUT
0.1UF C1
DNP
RINA+
C7
CLOSE TO PART
CLOSE TO PART
0
C17
0
1UF
D1
R63
0
OPEN
10K
0
R51
0
R37
R24
0
C16
1
RREFA+
R5
DNP
21
IN1+
V+
C26
OPEN
RINA1+
C4
R1
D2
RREF
DNP
A
J6
1UF
R44
0
R32
DNP
100K
2
OPEN
R33
RINA2-
R28
DNP
DNP
R11
R2
DNP
C6
1
0
C2
RREFAR20
J5
IN-
V-
IN-A
R48
10K
R6
REF1
RINA-
R14
J3
J4
Appendix A
AN1838.0
June 28, 2013
Application Note 1838
ISL70444SEHEVAL1Z LAYOUT
FIGURE 40. TOP VIEW
22
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Application Note 1838
ISL70444SEHEVAL1Z LAYOUT (Continued)
FIGURE 41. TOP LAYER
23
AN1838.0
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Application Note 1838
ISL70444SEHEVAL1Z LAYOUT (Continued)
FIGURE 42. BOTTOM LAYER
Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is
cautioned to verify that the Application Note or Technical Brief is current before proceeding.
For information regarding Intersil Corporation and its products, see www.intersil.com
24
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