DATASHEET

DATASHEET
Radiation Hardened 2.5V Reference
IS-1009RH, IS-1009EH
Features
The Star*Power™ Radiation Hardened IS-1009RH, IS-1009EH
are a 2.5V shunt regulator diode is designed to provide a stable
2.5V reference over a wide current range.
• Electrically screened to SMD #5962-00523
• QML qualified per MIL-PRF-38535 requirements
• EH version acceptance tested to 50krad(Si) (LDR)
These devices are designed to maintain stability over the full
military temperature range and over time. The 0.2% reference
tolerance is achieved by on-chip trimming.
• Radiation environment
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300 krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . 50krad(Si)
- Latch-up immune. . . . . . . . . . . . . . . . dielectrically isolated
An adjustment terminal is provided to allow for the calibration
of system errors. The use of this terminal to adjust the
reference voltage does not effect the temperature coefficient.
• Reverse breakdown voltage (VZ) . . . . . . . . . . . . . . . . . . . . 2.5V
• Change in VZ vs current (400µA to 10mA) . . . . . . . . . . . . 6mV
Constructed with the Intersil dielectrically isolated EBHF
process, these devices are immune to single event latch-up
and have been specifically designed to provide highly reliable
performance in harsh radiation environments.
• Change in VZ vs temperature (-55°C to +125°C) . . . . .15mV
• Maximum reverse breakdown current . . . . . . . . . . . . . 20mA
• Device is tested with 10µF shunt capacitance connected
from V+ to V-, which provides optimum stability
The IS-1009EH replaces the obsoleted IS-1009RH.
Specifications for Rad Hard QML devices are controlled by the
Defense Logistics Agency Land and Maritime (DLA). The SMD
numbers listed here must be used when ordering.
• Interchangeable with 1009 and 136 industry types
Detailed Electrical Specifications for these devices are
contained in SMD 5962-00523.
• Power supply monitoring
Applications
• Reference for 5V systems
• A/D and D/A reference
Pin Configurations
IS2-1009RH, IS2-1009EH
(TO-206AB CAN)
BOTTOM VIEW
V+
2
3 V-
ADJ 1
ISYE-1009RH, ISYE-1009EH
(SMD.5)
BOTTOM VIEW
V-
November 19, 2015
FN4780.7
1
2
ADJ
1
V+
3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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Intersil (and design) and Star*Power are trademarks owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
IS-1009RH, IS-1009EH
Ordering Information
ORDERING SMD NUMBER
(Note 2)
INTERNAL
MKT. NUMBER
(Note 1)
PART
MARKING
(RoHS Compliant)
TEMP. RANGE
(°C)
5962F0052302VXC
IS2-1009EH-Q
F00523V2
-55 to +125
5962F0052302VYC
ISYE-1009EH-Q
Q 5962F00 52302VYC
-55 to +125
5962F0052302V9A
IS0-1009EH-Q
IS2-1009EH/PROTO
IS2-1009EH/PROTO
IS2- 1009EH /PROTO
-55 to +125
ISYE-1009EH/PROTO
ISYE-1009EH/PROTO
ISYE- 1009EH /PROTO
-55 to +125
IS0-1009EH/SAMPLE
IS0-1009EH/SAMPLE
5962F0052301VXC
IS2-1009RH-Q
No longer available or supported
F00523V
-55 to +125
5962F0052301QXC
IS2-1009RH-8
No longer available or supported
F00523 01QXC Q
-55 to +125
5962F0052301VYC
ISYE-1009RH-Q
No longer available or supported
Q 5962F00 52301VYC
-55 to +125
5962F0052301QYC
ISYE-1009RH-8
No longer available or supported
Q 5962F00 52301QYC
-55 to +125
IS2-1009RH/PROTO
IS2-1009RH/PROTO
No longer available or supported
IS2-1009RH/PROTO
-55 to +125
ISYE-1009RH/PROTO
ISYE-1009RH/PROTO
No longer available or supported
ISYE-1009RH/PROTO
-55 to +125
5962F0052301V9A
IS0-1009RH-Q
No longer available or supported
-55 to +125
IS0-1009RH/SAMPLE
IS0-1009RH/SAMPLE
No longer available or supported
-55 to +125
-55 to +125
-55 to +125
NOTES:
1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both
SnPb and Pb-free soldering operations.
2. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed in the
“Ordering Information” table must be used when ordering.
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Die Characteristics
DIE DIMENSIONS
Backside Finish
1270µm x 1778µm (50 mils x 70 mils)
Thickness: 356µm ± 25.4µm (14 mils ± 1 mil)
INTERFACE MATERIALS
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential
Glassivation
Unbiased (DI)
Type: Nitride (Si3N4)
Nitride Thickness: 4.0kÅ ±1.0kÅ
ADDITIONAL INFORMATION
Worst Case Current Density
Top Metallization
<1.0 x 105 A/cm2
Type: AlSiCu
Thickness: 16.0kÅ± 2kÅ
Transistor Count
26
Substrate
EBHF, Dielectric Isolation
Metallization Mask Layout
IS-1009RH, IS-1009EH
ADJ
V+
V-
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Revision History
The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to the web to make sure that
you have the latest revision.
DATE
REVISION
November 19, 2015
FN4780.7
CHANGE
Added Rev History and About Intersil verbiage.
Added to page 1 introduction “The IS-1009EH replaces the obsoleted IS-1009RH.”
Updated Ordering Information on page 2 as follows:
Marked RH obsolete parts “No longer available or supported”
Added EH Proto and Sample parts.
About Intersil
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