00523

REVISIONS
LTR
DATE (YR-MO-DA)
APPROVED
A
Make change to case outline Y terminal symbols as specified in figure 2. - ro
DESCRIPTION
00-11-07
R. MONNIN
B
Make change to power dissipation as specified under 1.3. - ro
01-04-20
R. MONNIN
C
Delete input voltage and power dissipation limits and replace with reverse
current and forward current limits as specified under 1.3. - ro
04-03-12
R. MONNIN
D
Make change to the post irradiation limits as specified in the reference voltage
test under Table I. - ro
04-05-25
R. MONNIN
E
Add a new footnote under paragraph 1.5 and Table I.
Add pin numbers to figure 1 and add a note to figure 2. - ro
05-05-17
R. MONNIN
F
Add a new footnote to the conditions column header under Table I.
Delete paragraph 4.4.4.1.1 accelerated aging test.
Make change to paragraph A.4.3.1. - ro
06-01-18
R. MONNIN
G
Add two sentences to footnote 3/ as specified under Table I. - ro
08-11-05
R. HEBER
H
Make a clarification to paragraph 3.5 by adding back special part marking
information. - ro
09-04-01
J. RODENBECK
J
Make correction to the zener voltage versus zener current test conditions
column by deleting “100 mA” and substituting “10 mA”. - ro
10-04-20
C. SAFFLE
K
Make corrections to die thickness and glassivation as specified under
figure A-1. - ro
11-07-06
C. SAFFLE
L
Add device type 02 and figure A-2. Make changes to footnotes 2/, 3/ and
add 4/ under paragraph 1.5. Make changes to footnotes 1/ and 2/ under
table I. Delete paragraph 4.4.4.2 Dose rate burnout. Delete figure 3 Radiation
exposure circuit. Delete device class M references. - ro
13-09-10
C. SAFFLE
REV
SHEET
REV
L
L
L
SHEET
15
16
17
REV STATUS
REV
L
L
L
L
L
L
L
L
L
L
L
L
L
L
OF SHEETS
SHEET
1
2
3
4
5
6
7
8
9
10
11
12
13
14
PMIC N/A
PREPARED BY
RICK OFFICER
STANDARD
MICROCIRCUIT
DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
CHECKED BY
RAJESH PITHADIA
APPROVED BY
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
RAYMOND MONNIN
DRAWING APPROVAL DATE
00-08-04
REVISION LEVEL
L
MICROCIRCUIT, LINEAR, RADIATION
HARDENED, 2.5 V SHUNT DIODE REGULATOR,
MONOLITHIC SILICON
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
5962-00523
1 OF 17
5962-E489-13
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and
space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
F
00523
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
01
V
X
C
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
02
Generic number
Circuit function
IS-1009RH
IS-1009EH
Radiation hardened, 2.5 V shunt regulator diode
Radiation hardened, 2.5 V shunt regulator diode
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Device requirements documentation
Q or V
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
X
Y
Descriptive designator
Terminals
See figure 1
CBCC1-N3
3
3
Package style
Can, similar to TO-206AB or TO-46
Bottom terminal chip carrier
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V.
STANDARD
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APR 97
SIZE
5962-00523
A
REVISION LEVEL
L
SHEET
2
1.3 Absolute maximum ratings. 1/
Reverse current ............................................................................................................
Forward current .............................................................................................................
Lead temperature (soldering, 10 seconds) ....................................................................
Junction temperature (TJ) .............................................................................................
Storage temperature range ...........................................................................................
Thermal resistance, junction-to-case (θJC):
Case X .......................................................................................................................
Case Y .......................................................................................................................
Thermal resistance, junction-to-ambient (θJA):
Case X .......................................................................................................................
Case Y .......................................................................................................................
20 mA
10 mA
265°C
175°C
-65°C to +150°C
30°C/W
8°C/W
300°C/W
60°C/W
1.4 Recommended operating conditions.
Input current (IIN) .......................................................................................................... 400 µA to 10 mA
Ambient operating temperature range (TA) ................................................................... -55°C to +125°C
1.5 Radiation features.
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s):
Device type 01: ..........................................................................................................
Device type 02 ...........................................................................................................
Maximum total dose available (dose rate ≤ 0.01 rad(Si)/s):
Device type 02 ..........................................................................................................
Single event latch-up (SEL) ..........................................................................................
300 krads(Si) 2/
300 krads(Si) 3/
50 krads(Si) 3/
No latch up 4/
______
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ Device type 01 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate
effects. The radiation end point limits for the noted parameters are guaranteed only for the conditions as
specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si).
3/ Device type 02 radiation end point limits for the noted parameters are guaranteed only for the conditions as
specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si), and condition D to a
maximum total dose of 50 krads(Si).
4/ Devices use dielectrically isolated (DI) technology and latch up is physically not possible.
STANDARD
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COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-00523
A
REVISION LEVEL
L
SHEET
3
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein and figure 1.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.
3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-00523
A
REVISION LEVEL
L
SHEET
4
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.
Special marking for device classes Q and V for case outline X. The marking of the PIN number may be reduced to the RHA
designator, the 5 digit drawing designator, and the device class (for example, F00523V for device class V on the 01 device
type). The date code may be reduced to 3 digits (for example, 026 where 0 is the last digit of the year and 26 is the seal week)
for device class Q and V.
Device type 01 part number marking for device class V – F00523V.
Device type 02 part number marking for device class V – F00523V2.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance
submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the
manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall
be provided with each lot of microcircuits delivered to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
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A
REVISION LEVEL
L
SHEET
5
TABLE I. Electrical performance characteristics.
Test
Reference voltage
Symbol
VREF
Conditions 1/ 2/ 3/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
∆VZ /
400 µA ≤ IR ≤ 10 mA
M,D,P,L,R,F
Shunt resistance
rZ 4/
M,D,P,L,R,F
1/
Unit
2.495
2.505
2,3
2.480
2.510
1
2.49
2.515
-6
+6
2,3
-10
+10
1
-15
+15
0
0.6
2,3
0
1.0
1
0
1.5
1
IR = 1 mA
Limits
Max
1
∆IZ
Device
type
Min
1
IL = 1 mA
M,D,P,L,R,F
Zener voltage versus zener
current
Group A
subgroups
01, 02
01, 02
01, 02
V
mV
Ω
RHA device type 01 supplied to this drawing will meet all levels M, D, P, L, R, and F of irradiation. However, device type 01
is only tested at the “F” level in accordance with MIL-STD-883 method 1019 condition A (see 1.5 herein).
RHA device type 02 supplied to this drawing will meet all levels M, D, P, L, R, and F of irradiation for condition A
and levels M, D, P, and L for condition D. However, device type 02 is only tested at the “F” level in accordance with
MIL-STD-883, method 1019, condition A and tested at the “L” level in accordance with MIL-STD-883, method 1019,
condition D (see 1.5 herein).
Pre and post irradiation values are identical unless otherwise specified in table I. When performing post irradiation
electrical measurements for any RHA level, TA = +25°C.
2/
RHA device type 01 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose
rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in
MIL-STD-883, method 1019, condition A.
3/
Device is tested with 10 µF shunt capacitance connected from V+ to V-, which provides optimum stability.
This reference is susceptible to output oscillation for a certain range of shunt capacitance. Shunt capacitance values
from 1 nF to 3 µF inclusive should be avoided.
4/
This parameter is guaranteed but not tested. This parameter is characterized upon initial design or process changes
which affect this characteristic.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-00523
A
REVISION LEVEL
L
SHEET
6
Bottom view
Symbol
Inches
Millimeters
Notes
Min
Max
Min
Max
A
0.065
0.085
1.65
2.16
φb
0.016
0.021
0.41
0.53
φD
0.209
0.230
5.31
5.84
φD1
0.178
0.195
4.52
4.95
e
0.100 BSC
2.54 BSC
e1
0.050 BSC
1.27 BSC
F
---
0.040
---
1.02
j
0.028
0.048
0.71
1.22
k
0.036
0.046
0.91
1.17
L
0.500
---
12.70
1
---
α
45°
45°
2
N
3
3
3
NOTES:
1. Measured from maximum diameter of the actual device.
2. Measured from tab centerline.
3. N is number of leads.
4. The U.S. government preferred system of measurement is the metric SI system. However, since this item was
originally designed using inch-pound units of measurement, in the event of conflict between the metric and
inch-pound units, the inch-pound units shall take precedence.
FIGURE 1. Case outline.
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A
REVISION LEVEL
L
SHEET
7
Device types
Case outlines
Terminal number
01, 02
X
Y
Terminal symbol
1
ADJUST
V+
2
V+
ADJUST
3
Vsee note
V-
NOTE: For case X only, pin 3 is electrically tied to the case.
FIGURE 2. Terminal connections.
STANDARD
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COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
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A
REVISION LEVEL
L
SHEET
8
4. VERIFICATION
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection.
4.2.1 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections, and as specified herein.
4.4.1 Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b.
Subgroups 4, 5, 6, 7, 8, 9, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
STANDARD
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A
REVISION LEVEL
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SHEET
9
TABLE IIA. Electrical test requirements.
Test requirements
Interim electrical
parameters (see 4.2)
Final electrical
parameters (see 4.2)
Group A test
requirements (see 4.4)
Group C end-point electrical
parameters (see 4.4)
Group D end-point electrical
parameters (see 4.4)
Group E end-point electrical
parameters (see 4.4)
1
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Device
Device
class Q
class V
1
1,2,3 1/
1,2,3 2/ 3/
1,2,3
1,2,3
1,2,3
1,2,3 3/
1
1
1
1
1/ PDA applies to subgroup 1.
2/ PDA applies to subgroup 1 and deltas.
3/ Delta limits as specified in table IIB herein shall be required where
specified, and the delta values shall be completed with reference to
the zero hour electrical parameters (see table I).
TABLE IIB. Delta parameters (+25°C).
Parameters
Delta limits
VREF
±2 mV
∆VZ / ∆IZ
±1 mV
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein).
a.
End-point electrical parameters shall be as specified in table IIA herein.
b.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. All device classes must meet the postirradiation end-point
electrical parameter limits as defined in table I at TA = +25°C ±5°C, after exposure, to the subgroups specified in
table IIA herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019, condition A and as specified herein for device types 01 and 02. In addition, for device type 02 a low dose rate test
shall be performed in accordance with MIL-STD-883 method 1019, condition D and as specified herein.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q and V.
STANDARD
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DSCC FORM 2234
APR 97
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REVISION LEVEL
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SHEET
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6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires
configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and
this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DLA Land and Maritime-VA, telephone (614) 692-8108.
6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA, Columbus, Ohio 43218-3990,
or telephone (614) 692-0540.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in
MIL-HDBK-103 and QML-38535. The vendors listed in MIL-HDBK-103 and QML-38535 have submitted a certificate of
compliance (see 3.6 herein) to DLA Land and Maritime-VA and have agreed to this drawing.
STANDARD
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COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
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A
REVISION LEVEL
L
SHEET
11
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00523
A.1 SCOPE
A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified
Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers
approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using
chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of
military high reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number
(PIN). When available, a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN.
A.1.2 PIN. The PIN is as shown in the following example:
5962
F
Federal
stock class
designator
\
RHA
designator
(see A.1.2.1)
00523
01
V
9
A
Device
type
(see A.1.2.2)
Device
class
designator
(see A.1.2.3)
Die
code
Die
details
(see A.1.2.4)
/
\/
Drawing number
A.1.2.1 RHA designator. Device classes Q and V RHA identified die meet the MIL-PRF-38535 specified RHA levels. A dash
(-) indicates a non-RHA die.
A.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
Circuit function
IS-1009RH
IS-1009EH
Radiation hardened, 2.5 V shunt regulator diode
Radiation hardened, 2.5 V shunt regulator diode
01
02
A.1.2.3 Device class designator.
Device class
Q or V
STANDARD
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Device requirements documentation
Certification and qualification to the die requirements of MIL-PRF-38535
SIZE
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REVISION LEVEL
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00523
A.1.2.4 Die details. The die details designation is a unique letter which designates the die's physical dimensions, bonding
pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product
and variant supplied to this appendix.
A.1.2.4.1 Die physical dimensions.
Die type
Figure number
01
02
A-1
A-2
A.1.2.4.2 Die bonding pad locations and electrical functions.
Die type
Figure number
01
02
A-1
A-2
A.1.2.4.3 Interface materials.
Die type
Figure number
01
02
A-1
A-2
A.1.2.4.4 Assembly related information.
Die type
Figure number
01
02
A-1
A-2
A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details.
A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details.
STANDARD
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00523
A.2 APPLICABLE DOCUMENTS.
A.2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in
the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARD
MIL-STD-883 - Test Method Standard Microcircuits.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the
text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
A.3 REQUIREMENTS
A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
A.3.2 Design, construction and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein and the manufacturer’s QM plan for device classes Q and V.
A.3.2.1 Die physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figure A-1.
A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as
specified in A.1.2.4.2 and on figure A-1.
A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figure A-1.
A.3.2.4 Assembly related information. The assembly related information shall be as specified in A.1.2.4.4 and on figure A-1.
A.3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph 3.2.3 herein.
A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this
document.
A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing
sufficient to make the packaged die capable of meeting the electrical performance requirements in table I.
A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a
customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed
in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-00523
A
REVISION LEVEL
L
SHEET
14
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00523
A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a
QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate of
compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this appendix shall
affirm that the manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the
requirements herein.
A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535
shall be provided with each lot of microcircuit die delivered to this drawing.
A.4 VERIFICATION
A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance
with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM
plan shall not affect the form, fit, or function as described herein.
A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the
manufacturer’s QM plan. As a minimum, it shall consist of:
a.
Wafer lot acceptance for class V product using the criteria defined in MIL-STD-883, method 5007.
b.
100% wafer probe (see paragraph A.3.4 herein).
c.
100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, method 2010 or the
alternate procedures allowed in MIL-STD-883, method 5004.
A.4.3 Conformance inspection.
A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see
A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of
packaged die shall be as specified in table II herein. Group E tests and conditions are as specified in paragraphs 4.4.4 and
4.4.4.1 herein.
A.5 DIE CARRIER
A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or
as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and
electrostatic protection.
A.6 NOTES
A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with
MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications, and
logistics purposes.
A.6.2 Comments. Comments on this appendix should be directed to DLA Land and Maritime -VA, Columbus, Ohio,
43218-3990 or telephone (614)-692-0540.
A.6.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed within MIL-HDBK-103 and QML-38535 have submitted a certificate of compliance (see A.3.6 herein) to
DLA Land and Maritime -VA and have agreed to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-00523
A
REVISION LEVEL
L
SHEET
15
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00523
Die physical dimensions.
Die size: 50 mils x 70 mils
Die thickness: 14 mils ± 1 mils
Interface materials.
Top metallization: Al Si Cu 16.0 kÅ ± 2 kÅ
Backside metallization: None (Silicon)
Glassivation.
Type: Nitride (Si3N4)
Nitride thickness: 4 kÅ ± 1 kÅ
Substrate: HFSTDB: Single-poly dielectrically isolated complementary bipolar
Assembly related information.
Substrate potential: Unbiased
Special assembly instructions: None
FIGURE A-1. Die bonding pad locations and electrical functions.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-00523
A
REVISION LEVEL
L
SHEET
16
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00523
Die physical dimensions.
Die size: 50 mils x 70 mils
Die thickness: 14 mils ± 1 mils
Interface materials.
Top metallization: Al Si Cu 16.0 kÅ ± 2 kÅ
Backside metallization: None (Silicon)
Glassivation.
Type: Silox (Si02) 1:6:1
Thickness: 8 kÅ ± 0.8 kÅ (1 kÅ undopped, 6 kÅ dopped, cap 1 kÅ undopped)
Substrate: HFSTDB: Single-poly dielectrically isolated complementary bipolar
Assembly related information.
Substrate potential: Unbiased
Special assembly instructions: None
FIGURE A-2. Die bonding pad locations and electrical functions.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-00523
A
REVISION LEVEL
L
SHEET
17
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 13-09-10
Approved sources of supply for SMD 5962-00523 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DLA Land and Maritime-VA. This information
bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime
maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962F0052301QXC
34371
IS2-1009RH-8
5962F0052301QYC
34371
ISYE-1009RH-8
5962F0052301VXC
34371
IS2-1009RH-Q
5962F0052301VYA
3/
ISYES-1009RH-Q
5962F0052301VYC
34371
ISYE-1009RH-Q
5962F0052301V9A
34371
IS0-1009RH-Q
5962F0052302VXC
34371
IS2-1009EH-Q
5962F0052302VYC
34371
ISYE-1009EH-Q
5962F0052302V9A
34371
IS0-1009EH-Q
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
3/ Not available from approved source of supply.
Vendor CAGE
number
34371
Vendor name
and address
Intersil Corporation
1001 Murphy Ranch Road
Milpitas, CA 95035-6803
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.