4233

SENSITRON
SEMICONDUCTOR
1C4004
TECHNICAL DATA
DATASHEET 4233, Rev-
STANDARD RECOVERY
SILICON RECTIFIER DIE
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward Current
Die Size
Max. Junction Temperature
Max. Storage Temperature
Symbol
VRWM
IF(AV)
TJ
Tstg
Condition
@ 55°C
-
Max.
400
1.0
40
-55 to +175
-55 to +175
Units
V
A
mil
°C
°C
Symbol
VF1
Condition
@ 1.0A, Pulse, TJ = 25 °C
Duty cycle ≤ 2%, pulse width ≤
300µs
@V R = 200V, Pulse,
TJ = 25 °C
@V R = 200V, Pulse,
TJ = 100 °C
If = 500mA, Ir = 1A, Irm =
250mA
Max.
1.1
Units
V
10
µA
50
µA
2000
ns
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
Max. Reverse Current
IR1
IR2
Reverse Recovery Time
trr
Mechanical Dimensions: In Inches / mm
Bottom side metalization: Ti/NiAg - 30 kÅ minimum.
Top side metalization: Al - 25 kÅ minimum
ANODE
0.024 ± 0.003
(0.610 ± 0.076)
0.040 ± 0.003
(1.016 ± 0.076)
Bottom side is cathode, top side is anode.
Anode
0.009 ± 0.001 (0.229 ± 0.025)
Cathode
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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
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• World Wide Web - http://www.sensitron.com • E-Mail Address - [email protected]
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