MMBT5401GH

Zowie Technology Corporation
High Voltage Transistor
Lead free product
Halogen-free type
FEATURE
MMBT5401GH
ƽ We declare that the material of product compliance with RoHS requirements.
3
1
2
SOT-23
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
V CBO
V EBO
– 150
– 160
– 5.0
Vdc
Vdc
Vdc
IC
– 500
mAdc
Collector–Emitter Voltage
V
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
CEO
3
COLLECTOR
1
BASE
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR- 5 Board (1)
T A =25 °C
Derate above 25°C
PD
225
mW
1.8
mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature
R
556
°C/W
PD
300
mW
R θJA
T J, Tstg
2.4
417
–55 to +150
mW/°C
°C/W
°C
θJA
2
EMITTER
ELECTRICAL CHARACTERISTICS (T A = 25°C unles s otherwise noted)
Characteristic
Symbol
Min
Ma x
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = –1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
(I C = –100 µAdc, I E = 0)
Emitter-BAse Breakdown Voltage
(I E= –10µAdc,I C=0)
Collector Cutoff Current
(V CB = –120 Vdc, IE= 0)
(V CB = –120 Vdc, IE= 0, T A=100 °C)
V (BR)CEO
Vdc
– 150
—
– 160
—
-5.0
—
V (BR)CBO
Vdc
V(BR)EBO
Vdc
I CES
—
– 50
nAdc
—
– 50
µAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
REV. 1
Zowie Technology Corporation
Zowie Technology Corporation
MMBT5401GH
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Min
Max
50
60
50
––
240
––
––
––
– 0.2
– 0.5
(IC = –10 mAdc, I B = –1.0 mAdc)
––
– 1.0
(IC = –50 mAdc, I B = –5.0 mAdc)
––
– 1.0
100
300
––
6.0
40
200
––
8.0
Characteristic
Symbol
Unit
ON CHARACTERISTICS (2)
DC Current Gain
(IC = –1.0mAdc, V CE = –5.0 Vdc)
(IC = –10 mAdc, V CE = –5.0 Vdc)
(IC = –50 mAdc, V CE = –5.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, I B = –5.0 mAdc)
Base–Emitter Saturation Voltage
hFE
––
VCE(sat)
Vdc
VBE(sat)
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mAdc, V CE= –10 Vdc, f = 100 MHz)
Output Capacitance
(VCB= –10 Vdc, I E = 0, f = 1.0 MHz)
Small–Signal Current Gain
(IC= –1.0mAdc, VCE = –10Vdc, f = 1.0 kHz)
Noise Figure
(IC = –200 µAdc, VCE= –5.0 Vdc,Rs=10Ω, f = 1.0 kHz)
REV. 1
f
MHz
T
C obo
pF
h fe
—
NF
dB
Zowie Technology Corporation
Zowie Technology Corporation
MMBT5401GH
Figure 1. DC Current Gain
200
150
h FE, CURRENT GAIN
T J=125°C
100
25°C
70
50
–55°C
V
V
30
20
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
CE
CE
20
= –1.0 V
= –5.0 V
30
50
100
V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 2. Collector Saturation Region
1.0
0.9
0.8
0.7
0.6
I
0.5
C
=1.0mA
100 mA
30 mA
10mA
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I B , BASE CURRENT (mA)
Figure 3. Collector Cut–Off Region
I C , COLLECTOR CURRENT (µA)
10 3
10 2
10 1
V
CE
= 30 V
I C= I
CES
T J = 125°C
10 0
75°C
10 -1
10 -2
REVERSE
25°C
10 -3
- 0.3 - 0.2
- 0.1
FORWARD
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
V BE , BASE–EMITTER VOLTAGE (VOLTS)
REV. 1
Zowie Technology Corporation
Zowie Technology Corporation
MMBT5401GH
T J =25°C
0.9
V, VOLTAGE (VOLTS)
θ V, TEMPERATURE COEFFICIENT (mV/° C)
Figure 4. “On” Voltages
1.0
0.8
0.7
V
0.6
BE(sat)
@ I C /I B =10
0.5
0.4
0.3
0.2
V
CE(sat)
@I
C
/I B =10
0.1
0
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
50
100
Figure 5. Temperature Coefficients
2.5
T J = –55°C to 135°C
2.0
1.5
1.0
0.5
θ
0
VC
- 1.0
- 1.5
θ VB for V
- 2.0
- 2.5
0.1
0.2 0.3 0.5
3.0 k
in
10µs
INPUT PULSE
t r , t f < 10 ns
DUTY CYCLE = 1.0%
0.25µF
V
R
R
C
V
B
5.1 k
100
in
Values Shown are for I
1N914
C
2.0 3.0 5.0
10
20 30
50
100
Figure 7. Capacitances
–30 V
100
1.0
100
CC
@ 10 mA
out
T J =25°C
70
50
C, CAPACITANCE (pF)
V
V
+8.8 V
10.2V
BE(sat)
I C , COLLECTOR CURRENT (mA)
Figure 6. Switching Time Test Circuit
BB
CE(sat)
- 0.5
I C , COLLECTOR CURRENT (mA)
V
for V
30
C
20
ibo
10
7.0
C
5.0
obo
3.0
2.0
1.0
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
V R , REVERSE VOLTAGE (VOLTS)
Figure 9. Turn–Off Time
Figure 8. Turn–On Time
1000
700
500
100
I C /I B =10
T J= 25°C
t r @V
t r @V
200
30
CC= 30V
100
70
50
30
10
20
1.0
2.0 3.0
5.0
10
20 30
50
I C , COLLECTOR CURRENT (mA)
t f@ V
10
t f @VCC = 120V
CC
= 30V
t s @V
7.0
= 120V
CC
5.0
2.0
1.0
0.2 0.3 0.5
I C /I B= 10
T J= 25°C
3.0
t d @ V BE(off)= 1.0V
V CC = 120V
20
REV. 1
70
50
= 120V
t, TIME (ns)
t, TIME (ns)
300
CC
100
200
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
50
100
200
I C , COLLECTOR CURRENT (mA)
Zowie Technology Corporation
Zowie Technology Corporation
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Reel
Reel (pcs)
Carton (pcs)
Packaging
MMBT5401GH
2L
7"
3,000
60,000
120,000
SOT-23
PACKAGE DIMENSIONS
Unit : mm
2.55 ± 0.45
0.35 ± 0.15
1.40 ± 0.25
SOT-23
3
1
2
0.14 ± 0.06
1.90 ± 0.15
2.90 ± 0.20
1.10 ± 0.25
0.10 Max.
0.40 ± 0.10
SOLDERING FOOTPRINT
*Dimensions in inches and (millimeters)
0.031 (0.80)
0.037 (0.95)
REV. 1
0.079 (2.00)
0.035 (0.90)
SOT-23
0.037 (0.95)
Zowie Technology Corporation
Zowie Technology Corporation
MARKING DIAGRAM
SOT-23
DEV = Series Code
M = Month Code
Month Code
Series code
M
DEV
Pb Free
Wafer Source Code
Month Code :
ODD YEARS (2013/1/3)
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
REV. 1
1
2
3
4
5
6
7
8
9
T
V
C
EVEN YEARS (2014/1/3)
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
E
F
H
J
K
L
N
P
U
X
Y
Z
Zowie Technology Corporation