Neutron testing of the HS-201HSRH quad analog switch Nick van Vonno Intersil Corporation October 2013 Revision 0 Table of Contents 1. Introduction 2. Part Description 3. Test Description 3.1 Irradiation facility 3.2 Characterization equipment 3.3 Experimental Matrix 4 Results 4.1 Test results 4.2 Variables data 5 Discussion and conclusion 6 Appendices 7 Document revision history 1. Introduction This report summarizes results of 1 MeV equivalent neutron testing of the HS-201HSRH quad analog switch. The test was conducted in order to determine the sensitivity of the part to the displacement damage caused by the neutron environment. Neutron fluences ranged from 5 x 1011 n/cm2 to 1 x 1014 n/cm2 in an approximately logarithmic sequence. This project was carried out in collaboration with Honeywell Aerospace (Clearwater, FL), and their support is gratefully acknowledged. 2: Part Description The HS-201HSRH, HS-201HSEH are monolithic CMOS analog switches featuring power-off high input impedance, very fast switching speeds and low ON-resistance. Fabrication on the Intersil DI RSG process assures SEL immunity and good low dose rate performance. These Class V/Q devices are acceptance tested to 300krad (Si) at high dose rate and to 50krad(Si) at low dose rate. Power-off high input impedance enables the use of this device in redundant circuits without causing data bus signal degradation. ESD protection, overvoltage protection, fast switching times, low ON resistance and guaranteed radiation hardness make the HS-201HSRH ideal for any space application where improved switching performance is required. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-99618. A “hot-link” is provided on the Intersil homepage for downloading this and other documents. 1 • QML qualified per MIL-PRF-38535 • Radiation performance: - High dose rate (50-300rad(Si)/s) - Low dose rate (0.01rad(SI)/s) - SEL immune • Overvoltage protection (power on, switch off) • Power off high impedance • Fast switching times - tON - tOFF • Low “ON” resistance • Pin compatible with industry standard 201 switches • Operating supply range • Wide analog voltage range (±15V supplies) 300krad(Si) 50krad(Si) DI RSG process ±30V ±17V 110ns (max) 80ns (max) 50Ω (max) ±10V to ±15V ±15V 3: Test Description 3.1 Irradiation Facilities Neutron irradiation was performed by the Honeywell (Clearwater, FL) team at the Fast Burst Reactor facility at White Sands Missile Range (White Sands, NM), which provides a controlled 1MeV equivalent neutron flux. Parts were tested in an unbiased configuration with all leads open. As neutron irradiation activates many of the elements found in a packaged integrated circuit, the parts exposed at the higher neutron levels required (as expected) significant „cooldown time‟ before being shipped back to the Intersil facility (Palm Bay, FL) for electrical testing. 3.2 Characterization equipment and procedures Electrical testing was performed before and after irradiation using the Intersil production automated test equipment (ATE). All electrical testing was performed at room temperature. 3.3 Experimental matrix Testing proceeded in general accordance with the guidelines of MIL-STD-883 Test Method 1017. The experimental matrix consisted of five samples irradiated at 5 x 1011 n/cm2, five samples irradiated at 2 x 1012 n/cm2, five samples irradiated at 1 x 1013 n/cm2 and five samples irradiated at 1 x 1014 n/cm2. Two control units were used. 4: Results 4.1 Attributes data Neutron testing of the HS-201HSRH is complete and the results are reported in the balance of this report. It should be realized when reviewing the data that each neutron irradiation was made on a different 5unit sample; this is not total dose testing, where the damage is cumulative. Table 1 summarizes the results. 2 Table 1: Neutron irradiation test results. Neutron fluence Sample size Bin 1 Rejects 5 x 1011 n/cm2 2 x 1012 n/cm2 1 x 1013 n/cm2 1 x 1014 n/cm2 5 5 5 5 0 0 0 5 5 5 5 5 4.2 Variables data The plots in Figs. 1 through 15 show data plots for key parameters before and after irradiation to each level. The plots show the average, minimum and maximum of each parameter for each of the four channels as a function of neutron irradiation. The exception is Fig. 1 which shows the total power supply current, positive and negative, for the four channels. Power supply current, mA 15.0 10.0 5.0 0.0 -5.0 ICCP24 Avg ICCP24 Max ICCP08 Min IEEP24 Avg IEEP24 Max IEEP08 min Spec limit ICCP24 Min ICCP08 Avg ICCP08 Max IEEP24 Min IEEP08 Avg IEEP08 max Spec limit -10.0 -15.0 Pre-rad 1.00E+11 1.00E+12 1.00E+13 Neutron fluence, 1.00E+14 n/cm2 Fig. 1: HS-201HSRH positive and negative power supply current at ±8.0V and ±24V as a function of neutron irradiation, showing the mean, minimum and maximum of the populations at each level. Sample size was 5 for each cell (5 x 1011 n/cm2, 2 x 1012 n/cm2, 1 x 1013 n/cm2 and 1 x 1014 n/cm2), with two control units. The post-irradiation SMD limits are +12mA maximum (ICC) and -12V maximum (IEE). 3 LOW input threshold voltage 15.0 10.0 5.0 VALA1 Avg VALA1 Max VALA2 Min VALA3 Avg VALA3 Max VALA4 Min Spec limit VALA1 Min VALA2 Avg VALA2 Max VALA3 Min VALA4 Avg VALA4 Max 0.0 -5.0 -10.0 -15.0 1.00E+11 Pre-rad 1.00E+12 1.00E+13 Neutron fluence, 1.00E+14 n/cm2 Fig. 2: HS-201HSRH LOW input threshold voltage as a function of neutron irradiation, each channel, showing the mean, minimum and maximum of the populations at each level. Sample size was 5 for each cell (5 x 1011 n/cm2, 2 x 1012 n/cm2, 1 x 1013 n/cm2 and 1 x 1014 n/cm2), with two control units. The post-irradiation SMD limit is 0.8V maximum. HIGH input threshold voltage 15.0 10.0 5.0 0.0 -5.0 -10.0 -15.0 1.00E+11 Pre-rad VAHA1 Avg VAHA1 Max VAHA2 Min VAHA3 Avg VAHA3 Max VAHA4 Min Spec limit 1.00E+12 VAHA1 Min VAHA2 Avg VAHA2 Max VAHA3 Min VAHA4 Avg VAHA4 Max 1.00E+13 Neutron fluence, 1.00E+14 n/cm2 Fig. 3: HS-201HSRH HIGH input threshold voltage as a function of neutron irradiation, each channel, showing the mean, minimum and maximum of the populations at each level. Sample size was 5 for each cell (5 x 1011 n/cm2, 2 x 1012 n/cm2, 1 x 1013 n/cm2 and 1 x 1014 n/cm2), with two control units. The post-irradiation SMD limit is 2.4V minimum. 4 120.0 ON resistance, +10V 100.0 80.0 RON1P10 Avg RON1P10 Max RON2P10 Min RON3P10 Avg RON3P10 Max RON4P10 Min Spec limit RON1P10 Min RON2P10 Avg RON2P10 Max RON3P10 Min RON4P10 Avg RON4P10 Max 60.0 40.0 20.0 0.0 Pre-rad 1E+11 1E+12 1E+13 Neutron fluence, 1E+14 n/cm2 Fig. 4: HS-201HSRH ON resistance at +10.0V as a function of neutron irradiation, each channel, showing the mean, minimum and maximum of the populations at each level. Sample size was 5 for each cell (5 x 1011 n/cm2, 2 x 1012 n/cm2, 1 x 1013 n/cm2 and 1 x 1014 n/cm2), with two control units. The post-irradiation SMD limit is 50.0 ohms maximum. 120.0 ON resistance, -10V 100.0 80.0 RON1N10 Avg RON1N10 Max RON2N10 Min RON3N10 Avg RON3N10 Max RON4N10 Min Spec limit RON1N10 Min RON2N10 Avg RON2N10 Max RON3N10 Min RON4N10 Avg RON4N10 Max 60.0 40.0 20.0 0.0 Pre-rad 1E+11 1E+12 1E+13 Neutron fluence, 1E+14 n/cm2 Fig. 5: HS-201HSRH ON resistance at -10.0V as a function of neutron irradiation, each channel, showing the mean, minimum and maximum of the populations at each level. Sample size was 5 for each cell (5 x 1011 n/cm2, 2 x 1012 n/cm2, 1 x 1013 n/cm2 and 1 x 1014 n/cm2), with two control units. The post-irradiation SMD limit is 50.0 ohms maximum. 5 Source OFF leakage, +10V, nA 12.0 10.0 8.0 ISOFF1P14 Avg ISOFF1P14 Max ISOFF2P14 Min ISOFF3P14 Avg ISOFF3P14 Max ISOFF4P14 Min Spec limit ISOFF1P14 Min ISOFF2P14 Avg ISOFF2P14 Max ISOFF3P14 Min ISOFF4P14 Avg ISOFF4P14 Max 6.0 4.0 2.0 0.0 -2.0 Pre-rad 1E+11 1E+12 1E+13 Neutron fluence, 1E+14 n/cm2 Fig. 6: HS-201HSRH source OFF leakage at +10.0V as a function of neutron irradiation, each channel, showing the mean, minimum and maximum of the populations at each level. Sample size was 5 for each cell (5 x 1011 n/cm2, 2 x 1012 n/cm2, 1 x 1013 n/cm2 and 1 x 1014 n/cm2), with two control units. The post-irradiation SMD limit is +10.0nA maximum. Source OFF leakage, -10V, nA 0.0 -2.0 -4.0 -6.0 -8.0 -10.0 -12.0 Pre-rad 1E+11 ISOFF1N14 Avg ISOFF1N14 Max ISOFF2N14 Min ISOFF3N14 Avg ISOFF3N14 Max ISOFF4N14 Min Spec limit 1E+12 ISOFF1N14 Min ISOFF2N14 Avg ISOFF2N14 Max ISOFF3N14 Min ISOFF4N14 Avg ISOFF4N14 Max 1E+13 1E+14 Neutron fluence, n/cm2 Fig. 7: HS-201HSRH source OFF leakage at -10.0V as a function of neutron irradiation, each channel, showing the mean, minimum and maximum of the populations at each level. Sample size was 5 for each cell (5 x 1011 n/cm2, 2 x 1012 n/cm2, 1 x 1013 n/cm2 and 1 x 1014 n/cm2), with two control units. The post-irradiation SMD limit is +10.0nA maximum 6 Drain OFF leakage, +10V, nA 12.0 10.0 8.0 6.0 IDOFF1P14 Avg IDOFF1P14 Max IDOFF2P14Min IDOFF3P14 Avg IDOFF3P14 Max IDOFF4P14 Min Spec limit IDOFF1P14 Min IDOFF2P14 Avg IDOFF2P14 Max IDOFF3P14 Min IDOFF4P14 Avg IDOFF4P14 Max 4.0 2.0 0.0 -2.0 Pre-rad 1E+11 1E+12 1E+13 Neutron fluence, 1E+14 n/cm2 Fig. 8: HS-201HSRH drain OFF leakage at +10.0V as a function of neutron irradiation, each channel, showing the mean, minimum and maximum of the populations at each level. Sample size was 5 for each cell (5 x 1011 n/cm2, 2 x 1012 n/cm2, 1 x 1013 n/cm2 and 1 x 1014 n/cm2), with two control units. The post-irradiation SMD limit is +10.0nA maximum. Drain OFF leakage, -10V, nA 0.0 -2.0 -4.0 -6.0 -8.0 -10.0 -12.0 Pre-rad 1E+11 IDOFF1N14 Avg IDOFF1N14 Max IDOFF2N14 Min IDOFF3N14 Avg IDOFF3N14 Max IDOFF4N14 Min Spec limit 1E+12 IDOFF1N14 Min IDOFF2N14 Avg IDOFF2N14 Max IDOFF3N14 Min IDOFF4N14 Avg IDOFF4N14 Max 1E+13 Neutron fluence, 1E+14 n/cm2 Fig. 9: HS-201HSRH drain OFF leakage at -10.0V as a function of neutron irradiation, each channel, showing the mean, minimum and maximum of the populations at each level. Sample size was 5 for each cell (5 x 1011 n/cm2, 2 x 1012 n/cm2, 1 x 1013 n/cm2 and 1 x 1014 n/cm2), with two control units. The post-irradiation SMD limit is -10.0nA maximum. 7 Drain ON leakage, +10V, nA 12.0 10.0 8.0 IDON1P14 Avg IDON1P14 Max IDON2P14 Min IDON3P14 Avg IDON3P14 Max IDON4P14 Min Spec limit IDON1P14 Min IDON2P14 Avg IDON2P14 Max IDON3P14 Min IDON4P14 Avg IDON4P14 Max 6.0 4.0 2.0 0.0 Pre-rad 1E+11 1E+12 1E+13 Neutron fluence, 1E+14 n/cm2 Fig. 10: HS-201HSRH drain ON leakage at +10.0V as a function of neutron irradiation, each channel, showing the mean, minimum and maximum of the populations at each level. Sample size was 5 for each cell (5 x 1011 n/cm2, 2 x 1012 n/cm2, 1 x 1013 n/cm2 and 1 x 1014 n/cm2), with two control units. The post-irradiation SMD limit is +10.0nA maximum. 2.0 Drain ON leakage, -10V, nA 0.0 -2.0 -4.0 -6.0 -8.0 -10.0 IDON1N14 IDON1N14 IDON1N14 IDON2N14 IDON2N14 IDON2N14 -12.0 IDON3N14 IDON3N14 IDON3N14 IDON4N14 IDON4N14 IDON4N14 -14.0 -16.0 Pre-rad 1E+11 Spec limit 1E+12 1E+13 Neutron fluence, 1E+14 n/cm2 Fig. 11: HS-201HSRH drain ON leakage at -10.0V as a function of neutron irradiation, each channel, showing the mean, minimum and maximum of the populations at each level. Sample size was 5 for each cell (5 x 1011 n/cm2, 2 x 1012 n/cm2, 1 x 1013 n/cm2 and 1 x 1014 n/cm2), with two control units. The post-irradiation SMD limit is -10.0nA maximum. 8 Switch turnon time, +10V, ns 250.0 200.0 150.0 TON1P10 Avg TON1P10 Max TON2P10 Min TON3P10 Avg TON3P10 Max TON4P10 Min Spec limit TON1P10 Min TON2P10 Avg TON2P10 Max TON3P10 Min TON4P10 Avg TON4P10 Max 100.0 50.0 0.0 Pre-rad 1E+11 1E+12 1E+13 Neutron fluence, 1E+14 n/cm2 Fig. 12: HS-201HSRH switch turnon time at +10.0V as a function of neutron irradiation, each channel, showing the mean, minimum and maximum of the populations at each level. Sample size was 5 for each cell (5 x 1011 n/cm2, 2 x 1012 n/cm2, 1 x 1013 n/cm2 and 1 x 1014 n/cm2), with two control units. The post-irradiation SMD limit is 130.0ns maximum. Switch turnon time, -10V, ns 250.0 200.0 150.0 TON1N10 Avg TON1N10 Max TON2N10 Min TON3N10 Avg TON3N10 Max TON4N10 Min Spec limit TON1N10 Min TON2N10 Avg TON2N10 Max TON3N10 Min TON4N10 Avg TON4N10 Max 100.0 50.0 0.0 Pre-rad 1E+11 1E+12 1E+13 Neutron fluence, 1E+14 n/cm2 Fig. 13: HS-201HSRH switch turnon time at -10.0V as a function of neutron irradiation, each channel, showing the mean, minimum and maximum of the populations at each level. Sample size was 5 for each cell (5 x 1011 n/cm2, 2 x 1012 n/cm2, 1 x 1013 n/cm2 and 1 x 1014 n/cm2), with two control units. The post-irradiation SMD limit is 130.0ns maximum. 9 Switch turnoff time, +10V, ns 160.0 140.0 120.0 100.0 TOFF1P10 Avg TOFF1P10 Max TOFF2P10 Min TOFF3P10 Avg TOFF3P10 Max TOFF4P10 Min Spec limit TOFF1P10 Min TOFF2P10 Avg TOFF2P10 Max TOFF3P10 Min TOFF4P10 Avg TOFF4P10 Max 80.0 60.0 40.0 20.0 0.0 Pre-rad 1E+11 1E+12 1E+13 Neutron fluence, 1E+14 n/cm2 Fig. 14: HS-201HSRH switch turnoff time at +10.0V as a function of neutron irradiation, each channel, showing the mean, minimum and maximum of the populations at each level. Sample size was 5 for each cell (5 x 1011 n/cm2, 2 x 1012 n/cm2, 1 x 1013 n/cm2 and 1 x 1014 n/cm2), with two control units. The post-irradiation SMD limit is 80.0ns maximum. Switch turnoff time, -10V, ns 160.0 140.0 120.0 100.0 TOFF1N10 Avg TOFF1N10 Max TOFF2N10 Min TOFF3N10 Avg TOFF3N10 Max TOFF4N10 Min Spec limit TOFF1N10 Min TOFF2N10 Avg TOFF2N10 Max TOFF3N10 Min TOFF4N10 Avg TOFF4N10 Max 80.0 60.0 40.0 20.0 0.0 Pre-rad 1E+11 1E+12 1E+13 1E+14 Neutron fluence, n/cm2 Fig. 15: HS-201HSRH switch turnoff time at -10.0V as a function of neutron irradiation, each channel, showing the mean, minimum and maximum of the populations at each level. Sample size was 5 for each cell (5 x 1011 n/cm2, 2 x 1012 n/cm2, 1 x 1013 n/cm2 and 1 x 1014 n/cm2), with two control units. The post-irradiation SMD limit is 80.0ns maximum. 10 5: Discussion and conclusion This document reports the results of neutron testing of the HS-201HSRH quad analog switch. Samples were irradiated to levels of 5 x 1011 n/cm2, 2 x 1012 n/cm2, 1 x 1013 n/cm2 and 1 x 1014 n/cm2 with a sample size of five parts per cell. It should again be realized when reviewing the data that each neutron irradiation was made on a different 5-unit sample; this is not total dose testing, where the damage is cumulative. ATE characterization testing was performed before and after the irradiations, and three control units were used to insure repeatable data. Variables data for monitored parameters is presented in Figs. 1 through 15. The 2 x 1012 n/cm2 level is of some interest in the context of recent developments in the JEDEC community, where the discrete component vendor community have signed up for characterization testing (but not for acceptance testing) at this level. The HS-201HSRH is not formally designed for neutron hardness. The part is built in a DI BiCMOS process. There are some bipolar transistors in the design; these are minority carrier devices may be expected to be sensitive to displacement damage (DD) at the higher levels. This expectation turned out to be correct. We will discuss the results on a parameter by parameter basis and then draw some conclusions. The positive and negative power supply current (Fig. 1) showed good stability after 5 x 1011 n/cm2 and 2 x 1012 n/cm2, a slight decrease after 1 x 1013 n/cm2 irradiation and a further decrease after 1 x 1014 n/cm2 irradiation. The switch turnon time at +10.0V and HIGH input threshold voltage (Figs. 2 and 3) showed good stability after 5 x 1011 n/cm2, 2 x 1012 n/cm2 and 1 x 1013 n/cm2 irradiation but was basically nonfunctional after 1 x 1014 n/cm2 irradiation. The switch ON resistance at +10.0V and -10.0V (Figs. 4 and 5) showed good stability after 5 x 1011 n/cm2, 2 x 1012 n/cm2 and 1 x 1013 n/cm2 irradiation but was also nonfunctional after 1 x 1014 n/cm2 irradiation. At this point the reader will note that the samples were nonfunctional after irradiation to 1 x 1014 n/cm2, and the data taken at this level do not carry a great deal of meaning. The source OFF leakage at +10.0V and -10.0V (Figs. 6 and 7), the drain OFF leakage at +10.0V and 10.0V (Figs. 8 and 9) and the drain ON leakage at +10.0V and -10.0V (Figs. 10 and 11) showed good stability after 5 x 1011 n/cm2, 2 x 1012 n/cm2 and 1 x 1013 n/cm2 irradiation but were nonfunctional after 1 x 1014 n/cm2 irradiation. The switch turnon time at +10.0V and -10.0V (Figs. 12 and 13) and the switch turnoff time at +10.0V and -10.0V (Figs. 14 and 15) showed good stability after 5 x 1011 n/cm2, 2 x 1012 n/cm2 and 1 x 1013 n/cm2 irradiation but were nonfunctional after 1 x 1014 n/cm2 irradiation. We conclude that the HS-201HSRH is capable of post 1 x 1013 n/cm2 operation within the SMD post-total dose parameters. The part is not capable of post 1 x 1014 n/cm2 operation as it was found to be nonfunctional after irradiation to this level. 11 6: Appendices 6.1: Reported parameters. Fig. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Parameter Limit, low Limit, high Units 2.4 - ±12.0 0.8 50 50 +10.0 -10.0 +10.0 -10.0 +10.0 -10.0 130.0 130.0 80.0 80.0 mA V V ohms ohms nA nA nA nA nA nA ns ns ns ns Positive and negative supply current ON input threshold OFF input threshold ON resistance, +10.0V ON resistance, +10.0V Source OFF leakage, +10.0V Source OFF leakage, -10.0V Drain OFF leakage, +10.0V Drain OFF leakage, -10.0V Drain ON leakage, +10.0V Drain ON leakage, -10.0V Switch turnon time, +10.0V Switch turnon time, -10.0V Switch turnoff time, +10.0V Switch turnoff time, -10.0V 7: Document revision history Revision 0 Date 11 October 2013 Pages All Comments Original issue 12 Notes