Test Report 030 1MeV Equivalent Neutron Testing of the HS-303ARH Quad Analog Switch Introduction TABLE 1. HS-303ARH PIN ASSIGNMENTS This report summarizes results of 1MeV equivalent neutron testing of the HS-303ARH quad analog switch circuit. The test was conducted in order to determine the sensitivity of the part to Displacement Damage (DD) caused by neutron or proton environments. Neutron fluences ranged from 2x1012n/cm2 to 1x1014n/cm2. This project was carried out in collaboration with Boeing (El Segundo, CA), whose support is gratefully acknowledged. Reference Documents • MIL-STD-883 test method 1017 • HS-303ARH data sheet TERMINAL NUMBER TERMINAL SYMBOL TERMINAL NUMBER TERMINAL SYMBOL 1 NC 8 V+ 2 S3 9 S4 3 D3 10 D4 4 D1 11 D2 5 S1 12 S2 6 IN1 13 IN2 7 GND 14 V- • Standard Microcircuit Drawing (SMD) 5962-95813 Test Description Part Description Irradiation Facilities The HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH analog switches are monolithic devices fabricated using Intersil’s dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to insure latch-up free operation. They are pinout compatible and functionally equivalent to the HS-303RH, but offer improved 300krad(Si) total dose capability. These switches offer low-resistance switching performance for analog voltages up to the supply rails. The switch ON-resistance is low and stays reasonably constant over the full range of operating voltage and current. Break-before-make switching is controlled by 5V digital inputs. The HS-303ARH, HS-303AEH should be operated with nominal ±15V supplies, while the HS-303BRH, HS-303BEH should be operated with nominal ±12V supplies. Specifications for radiation hardened QML devices are controlled by the Defense Logistics Agency (DLA) Land and Maritime. The SMD number listed in the following must be used when ordering. Detailed electrical specifications for the HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH are contained in SMD 5962-95813. The HS-303ARH family of devices are acceptance tested to a total dose (TID) level of 300krad(Si) at a high dose rate (50-300rad(Si)/s). The HS-303AEH family of devices are acceptance tested to a total dose (TID) level of 300krad(Si) at a high dose rate (50-300rad(Si)/s) and to 50krad(Si) at a low dose rate (< 0.01rad(Si)/s). May 6, 2016 TR030.0 1 1MeV equivalent neutron irradiation was performed by the Boeing team at the White Sands Missile Range fast burst reactor. Dosimetry data can be furnished upon request. Parts were tested in an unbiased configuration with all leads shorted together in general accordance with TM 1017 of MIL-STD-883. As neutron irradiation activates many of the heavier elements found in a packaged integrated circuit, the parts exposed at the higher neutron levels required considerable ‘cooldown’ time before being shipped back to Intersil for electrical testing. Test Fixturing No formal irradiation test fixturing was involved. These DD tests are termed ‘bag tests’ in the sense that the parts are irradiated in an electrically inactive state with all leads shorted together. Characterization Equipment and Procedures Electrical testing was performed before and after irradiation using the Intersil Palm Bay, FL automated test equipment (ATE). All electrical testing was performed at room temperature. Experimental Matrix The experimental matrix consisted of 5 samples irradiated at 2x1012n/cm2, 5 irradiated at 1x1013n/cm2, 5 irradiated at 3x1013n/cm2 and 5 irradiated at 1x1014n/cm2. Five control units were used. The HS-303ARH samples were drawn from fabrication lot DWX7ABA and were packaged in the standard 14 Ld ceramic production package, code CDFP3-F14. Samples were screened to the SMD limits over temperature before the start of neutron testing. CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2016. All Rights Reserved Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries. All other trademarks mentioned are the property of their respective owners. Test Report 030 Results Variables Data Neutron testing of the HS-303ARH is complete and the results are reported in the balance of this report. It should be carefully realized when interpreting the data that each neutron irradiation was performed on a different five-unit sample; this is not total dose testing, where the damage is cumulative over a number of downpoints. Attributes Data TABLE 2. HS-303ARH ATTRIBUTES DATA PART HS-303ARH SERIAL 1-5 SAMPLE FLUENCE, PASS SIZE n/cm2 (Note 1) FAIL NOTES 5 2x1012 5 0 All passed 5 0 All passed HS-303ARH 6-10 5 1x1013 HS-303ARH 11-15 5 3x1013 5 0 All passed HS-303ARH 16-20 5 1x1014 5 0 All passed The plots in Figures 1 through 10 show data plots for key parameters before and after irradiation to each level. The reported parameters and their datasheet limits are shown in Table 3 on page 8. The plots show the population median of each parameter as a function of neutron irradiation as well as population maximum and minimum error bars. We chose to plot the median because of the small sample sizes (five per cell) involved. We also show the applicable post-total dose electrical limits as taken from the SMD; it should be carefully noted that these limits are provided for guidance only as the HS-303ARH is not specified or guaranteed for the neutron environment. Intersil does not design, qualify or guarantee its parts for the DD environment, but has performed limited collaborative neutron testing for customer guidance. NOTE: 1. ‘Pass’ indicates a sample that passes all SMD limits. Variables Data Plots 700 ICC Spec limit POSITIVE SUPPLY CURRENT (µA) 600 500 400 300 200 100 0 PRE-RAD 1E+11 1E+12 1E+13 1E+14 NEUTRON LEVEL (n/cm2) FIGURE 1. HS-303ARH positive supply current as a function of 1MeV equivalent neutron irradiation at 2x1012n/cm2, 1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. The plot shows the population median and minimum and maximum error bars at each downpoint. Sample size for each cell was 5. The post-total dose irradiation SMD limit is 600µA maximum. Submit Document Feedback 2 TR030.0 May 6, 2016 Test Report 030 Variables Data Plots (Continued) 20 IEE Spec limit IEE Spec limit NEGATIVE SUPPLY CURRENT (µA) 0 -20 -40 -60 -80 -100 -120 PRE-RAD 1E+11 1E+12 1E+13 1E+14 NEUTRON LEVEL (n/cm2) FIGURE 2. HS-303ARH negative supply current as a function of 1MeV equivalent neutron irradiation at 2x1012n/cm2, 1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. The plot shows the population median and minimum and maximum error bars at each downpoint. Sample size for each cell was 5. The post-total dose irradiation SMD limit is -100µA minimum. 70 RDS(+) Spec limit SWITCH ON-RESISTANCE (Ω) 60 50 40 30 20 10 0 PRE-RAD 1E+11 1E+12 1E+13 1E+14 NEUTRON LEVEL (n/cm2) FIGURE 3. HS-303ARH switch ON-resistance, drain voltage +10V, as a function of 1MeV equivalent neutron irradiation at 2x1012n/cm2, 1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. The plot shows the population median and minimum and maximum error bars at each downpoint. Sample size for each cell was 5. The post-total dose irradiation SMD limit is 60Ω maximum. Submit Document Feedback 3 TR030.0 May 6, 2016 Test Report 030 Variables Data Plots (Continued) 70 RDS(-) Spec limit SWITCH ON-RESISTANCE (Ω) 60 50 40 30 20 10 0 PRE-RAD 1E+11 1E+12 1E+13 1E+14 NEUTRON LEVEL (n/cm2) FIGURE 4. HS-303ARH switch ON-resistance, drain voltage -10V, as a function of 1MeV equivalent neutron irradiation at 2x1012n/cm2, 1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. The plot shows the population median and minimum and maximum error bars at each downpoint. Sample size for each cell was 5. The post-total dose irradiation SMD limit is 60Ω maximum. SOURCE LEAKAGE, OFF SWITCH (nA) 150 100 50 0 -50 IS+(OFF) -100 IS-(OFF) Spec limit Spec limit -150 PRE-RAD 1E+11 1E+12 1E+13 1E+14 NEUTRON LEVEL (n/cm2) FIGURE 5. HS-303ARH leakage current into the source terminal of an OFF switch, Channel 1, as a function of 1MeV equivalent neutron irradiation at 2x1012n/cm2, 1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. The plot shows the population median and minimum and maximum error bars at each downpoint. Sample size for each cell was 5. The post-total dose irradiation SMD limits are -100nA to 100nA. Submit Document Feedback 4 TR030.0 May 6, 2016 Test Report 030 Variables Data Plots (Continued) 150 DRAIN LEAKAGE, OFF SWITCH (nA) 100 50 0 -50 ID+(OFF) -100 ID-(OFF) Spec limit Spec limit -150 PRE-RAD 1E+11 1E+12 1E+13 1E+14 NEUTRON LEVEL (n/cm2) FIGURE 6. HS-303ARH leakage current into the drain terminal of an OFF switch, Channel 1, as a function of 1MeV equivalent neutron irradiation at 2x1012n/cm2, 1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. The plot shows the population median and minimum and maximum error bars at each downpoint. Sample size for each cell was 5. The post-total dose irradiation SMD limits are -100nA to 100nA. 150 DRAIN LEAKAGE, ON SWITCH (nA) 100 50 0 -50 ID+(ON) -100 ID-(ON) Spec limit Spec limit -150 PRE-RAD 1E+11 1E+12 1E+13 1E+14 NEUTRON LEVEL (n/cm2) FIGURE 7. HS-303ARH leakage current into the drain terminal of an ON switch, Channel 1, as a function of 1MeV equivalent neutron irradiation at 2x1012n/cm2, 1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. The plot shows the population median and minimum and maximum error bars at each downpoint. Sample size for each cell was 5. The post-total dose irradiation SMD limits are -100nA to 100nA. Submit Document Feedback 5 TR030.0 May 6, 2016 Test Report 030 Variables Data Plots (Continued) HIGH AND LOW ADDRESS INPUT CURRENT (nA) 1500 1000 500 0 -500 IAH -1000 IAL Spec limit Spec limit -1500 PRE-RAD 1E+11 1E+12 1E+13 1E+14 NEUTRON LEVEL (n/cm2) FIGURE 8. HS-303ARH HIGH and LOW address input current, address A1 as a function of 1MeV equivalent neutron irradiation at 2x1012n/cm2, 1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. The plot shows the population median and minimum and maximum error bars at each downpoint. Sample size for each cell was 5. The post-total dose irradiation SMD limits are -1000nA to 1000nA. 350 tOPEN Spec limit BREAK-BEFORE-MAKE DELAY (ns) 300 250 200 150 100 50 0 PRE-RAD 1E+11 1E+12 1E+13 1E+14 NEUTRON LEVEL (n/cm2) FIGURE 9. HS-303ARH break-before-make delay as a function of 1MeV equivalent neutron irradiation at 2x1012n/cm2, 1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. The plot shows the population median and minimum and maximum error bars at each downpoint. Sample size for each cell was 5. The post-total dose irradiation SMD limits are 300ns maximum. Submit Document Feedback 6 TR030.0 May 6, 2016 Test Report 030 Variables Data Plots (Continued) 600 TURN-ON AND TURN-OFF TIME (ns) 500 400 300 200 tON 100 tOFF Spec limit, tON Spec limit, tOFF 0 PRE-RAD 1E+11 1E+12 1E+13 1E+14 NEUTRON LEVEL (n/cm2) FIGURE 10. HS-303ARH switch turn-on and turn-off time as a function of 1MeV equivalent neutron irradiation at 2x1012n/cm2, 1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. The plot shows the population median and minimum and maximum error bars at each downpoint. Sample size for each cell was 5. The post-total dose irradiation SMD limits are 500ns maximum (turn-on time) and 450ns maximum (turn-off time). Conclusion This report summarizes results of 1MeV equivalent neutron testing of the HS-303ARH quad analog switch. The test was conducted in order to determine the sensitivity of the part to Displacement Damage (DD) caused by neutron or proton environments in space. Neutron fluences ranged from 2x1012n/cm2 to 1x1014n/cm2. This test was carried out as part of a collaborative project with Boeing (El Segundo, CA), whose support is gratefully acknowledged. The samples met all specifications (Bin 1) after 2x1011n/cm2, 1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. Submit Document Feedback 7 TR030.0 May 6, 2016 Test Report 030 Appendices Reported Parameters Reported parameters are shown in Table 3. The limits are taken from the applicable SMD and are provided for guidance only as the part is not designed or guaranteed for the neutron environment. The plots show the population median and minimum and maximum error bars at each downpoint. TABLE 3. REPORTED PARAMETERS FIGURE PARAMETER LIMIT, LOW LIMIT, HIGH UNITS NOTES 1 Positive Supply Current - 600 µA 2 Negative Supply Current -100 - µA 3 Switch ON-Resistance - 60 Ω Drain voltage 10V 4 Switch ON-Resistance - 60 Ω Drain voltage 10V 5 Leakage, Source Terminal of an Off Switch -100 100 nA Channel 1 6 Leakage, Drain Terminal of an Off Switch -100 100 nA Channel 1 7 Leakage, Drain Terminal of an On Switch -100 100 nA Channel 1 8 Address Input HIGH Current -1000 1000 nA Address A1 Address Input LOW Current -1000 1000 nA Address A1 9 Break-Before-Make-Delay - 300 ns 10 Switch Turn-On Time - 500 ns Switch Turn-Off Time - 450 ns Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that the document is current before proceeding. For information regarding Intersil Corporation and its products, see www.intersil.com Submit Document Feedback 8 TR030.0 May 6, 2016