ISL75052SEH Neutron Test Report

Test Report 028
Neutron Testing of the ISL75052SEH Low Dropout
Regulator
Introduction
This report summarizes results of 1MeV equivalent neutron
testing of the ISL75052SEH Low Droput (LDO) regulator. The
test was conducted in order to determine the sensitivity of the
part to Displacement Damage (DD) caused by neutron or
proton environments. Neutron fluences ranged from
2x1012n/cm2 to 1x1014n/cm2. This project was carried out in
collaboration with VPT, Inc. (Blacksburg, VA), and their support
is gratefully acknowledged.
Reference Documents
• MIL-STD-883 test method 1017
• ISL75052SEH datasheet
• Standard Microcircuit Drawing (SMD) 5962-13220
Part Description
The ISL75052SEH is a radiation hardened, single output Low
Dropout (LDO) regulator specified for an output current of
1.5A. The device operates from an input voltage range of 4.0V
to 13.2V and an output voltage range of 0.6V to 12.7V. The
output voltage is adjustable based on an external resistor
divider setting. Dropout voltages as low as 75mV (at 0.5A)
typical can be realized, allowing the user to improve system
efficiency by lowering VIN to nearly VOUT. An ENABLE feature
allows the part to be placed into a low shutdown current mode
of 165μA (typical). When enabled, the ISL75052SEH operates
with a low ground current of 11mA (typical), which provides
operation with low quiescent power consumption. The device
has superior transient response and is designed for
predictable operation in the Single-Event Effects (SEE)
environment, including reduced Single-Event Transient (SET)
magnitude seen on the output. There is no need for additional
SET protection diodes and filters.
A compensation (COMP) pin is provided to enable the use of
external compensation. This is achieved by connecting a
resistor and capacitor from the COMP pin to ground. The
device is stable with tantalum capacitors as low as 47μF
(KEMET T525 series) and provides excellent voltage regulation
from no load to full load. The programmable soft-start function
allows the user to program the inrush current by means of the
decoupling capacitor used on the Bypass (BYP) pin. The
Overcurrent Protection (OCP) pin allows the short-circuit output
current limit threshold to be programmed by means of a
resistor from the OCP pin to ground. The OCP setting range is
from 0.16A minimum to 3.2A maximum.
A thermal shutdown function disables the output if the device
temperature exceeds a specified value; the ISL75052SEH will
subsequently enter an ON/OFF (hiccup) cycle until the fault is
removed. The ISL75052SEH is available in a 16 Ld hermetic
ceramic flatpack and in die form. The part offers guaranteed
performance across the full -55°C to +125°C military
temperature range.
The ISL75052SEH is hardened to achieve a Total Dose (TID)
rating of 100krads(Si) at both high (50-300rad(Si)/s) and low
(< 0.01rad(Si)/s) dose rates as specified in MIL-STD-883 test
method 1019. The part is acceptance tested on a
wafer-by-wafer basis at a low dose rate to 50krad(Si) and at a
high dose rate to 100krad(Si).
The ISL75052SEH is also SEE tolerant to a Linear Energy
Transfer (LET) value of 86.4MeV•cm2/mg. Single-Event
Transients (SETs) have evolved into a major issue in power
management parts driving voltage-sensitive loads, and the
part provides superior performance in this environment. The
ISL75052SEH is implemented in a submicron BiCMOS process
optimized for power management applications. The process is
in volume production under MIL-PRF-38535 certification and
is used for a wide range of commercial power management
devices.
Specifications for Radiation Hardened QML devices are
controlled by the Defense Logistics Agency (DLA) in Columbus,
OH. The SMD is the controlling document and must be cited
when ordering.
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1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2016 All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
Test Report 028
Block Diagram
COMP
VIN
3.8V
LDO
OCP
VCCX
CURRENT
LIMIT
BYP
600mV
+
REFERENCE
BIAS
POWER
PDMOS
EN
VOUT
THERMAL
SHUTDOWN
UVLO
ADJ
PG
540mV
+
DELAY
GND
FIGURE 1. ISL75052SEH BLOCK DIAGRAM
Test Description
Irradiation Facilities
Neutron irradiation was performed by the VPT team at the
University of Massachusetts Lowell Fast Neutron Irradiation (FNI)
facility, which provides a controlled 1MeV equivalent neutron
flux. Parts were tested in an unbiased configuration with all leads
shorted together in accordance with Test Method 1017 of
MIL-STD-883. As neutron irradiation activates many of the
heavier elements found in a packaged integrated circuit, the
parts exposed at the higher neutron levels required (as expected)
some ‘cool-down’ time before being shipped back to Intersil
(Palm Bay, FL) for electrical testing.
Testing proceeded in general accordance with the guidelines of
MIL-STD-883 Test Method 1017. The experimental matrix
consisted of 5 samples irradiated at 2x1012n/cm2, 5 irradiated
at 1x1013n/cm2, 5 irradiated at 3x1013n/cm2 and 5 irradiated
at 1x1014n/cm2. Two control units (serial numbers 68 and 70)
were used.
ISL75052SEHF/PROTO samples were drawn from Lot WXW8MA.
Samples were packaged in the standard hermetic 16 Ld ceramic
flatpack production package, code K16.E. Samples were
screened to the SMD limits over temperature before the start of
neutron testing.
Results
Test Fixturing
No formal irradiation test fixturing was involved, as these DD
tests are ‘bag tests’ in the sense that the parts are irradiated in
an electrically inactive state with all leads shorted together.
Characterization Equipment and Procedures
Electrical testing was performed before and after irradiation
using the Intersil production Automated Test Equipment (ATE). All
electrical testing was performed at room temperature.
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Experimental Matrix
2
Neutron testing of the ISL75052SEH is complete and the results
are reported in the balance of this report. It should be carefully
realized when interpreting the data that each neutron irradiation
was performed on a different five-unit sample; this is not total
dose testing, where the damage is cumulative over a number of
downpoints.
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Test Report 028
Attributes Data
TABLE 1. ISL75052SEH ATTRIBUTES DATA
SERIAL
SAMPLE
SIZE
FLUENCE
N/CM2
PASS
(Note 1)
FAIL
ISL75052SEH
379 through 383
5
2x1012
5
0
All passed
ISL75052SEH
384, 385, 406, 407,
409
5
1x1013
5
5
All passed
ISL75052SEH
410 through 414
5
3x1013
0
5
All failed parametrically, VREF and
VOUT at ±1.5% specification
ISL75052SEH
416, 417,
419 through 421
5
1x1014
0
5
All failed parametrically, VREF and
VOUT outside ±2.0% range
PART
NOTES
NOTE:
1. ‘Pass’ indicates a sample that passes all SMD limits.
Variables Data
The plots in Figures 2 through 26 show data plots for key
parameters before and after irradiation to each level. The
reported parameters and their datasheet limits are shown in
Table 2 on page 17. The plots show the median of each
parameter as a function of neutron irradiation. We chose to plot
the median because of the small sample sizes (five per cell)
involved. We also show the applicable electrical limits taken from
the SMD; it should be carefully noted that these limits are
provided for guidance only as the ISL75052SEH is not specified
or guaranteed for the neutron environment. Intersil does not
design, qualify or guarantee its parts for the DD environment, but
has done some limited neutron testing for customer guidance.
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Test Report 028
Variables Data Plots
0.6
EN_IIL
0.4
EN_IIH
Spec limit
ENABLE LOW AND HIGH CURRENT (µA)
0.2
Spec limit
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
PRE-RAD
1.00E+11
1.00E+12
NEUTRON FLUENCE
1.00E+13
1.00E+14
(n/cm2)
FIGURE 2. ISL75052SEH enable LOW and enable HIGH current as a function of 1MeV equivalent neutron irradiation at 2x1012n/cm2,
1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. Sample size for each cell was 5. The datasheet limits are -0.5µA to 0.5µA.
0.8
ADJ_Ibias
0.6
ADJUST PIN BIAS CURRENT (µA)
0.4
Spec limit
Spec limit
0.2
0
-0.2
-0.4
-0.6
-0.8
PRE-RAD
1.00E+11
1.00E+12
1.00E+13
1.00E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 3. ISL75052SEH adjust pin bias current as a function of 1MeV equivalent neutron irradiation at 2x1012n/cm2, 1x1013n/cm2,
3x1013n/cm2 and 1x1014n/cm2. Sample size for each cell was 5. The datasheet limits are -0.7µA to 0.7µA.
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Variables Data Plots (Continued)
350
IShtDw n_ Vm in
300
IShtDw n_ Vm ax
SHUTDOWN CURRENT (µA)
Spec limit
250
Spec limit
200
150
100
50
0
1.00E+11
PRE-RAD
1.00 E+12
1.00E+13
1.00E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 4. ISL75052SEH shutdown current at maximum and minimum input voltage as a function of 1MeV equivalent neutron irradiation at
2x1012n/cm2, 1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. Sample size for each cell was 5. The datasheet limits are 120.0µA
(maximum) at 4.0V input and 300.0µA (maximum) at 13.2V input.
0.615
Vadj_Vmin
Vadj_Vmax
Spec limit
ADJUST PIN VOLTAGE (V)
Spec limit
0.605
0.595
0.585
1.00E+11
PRE-RAD
1.00E+12
1.00E+13
1.00E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 5. ISL75052SEH adjust pin voltage as a function of 1MeV equivalent neutron irradiation at 2x1012n/cm2, 1x1013n/cm2, 3x1013n/cm2
and 1x1014n/cm2. Sample size for each cell was 5. The datasheet limits are 0.591V to 0.609V.
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Variables Data Plots (Continued)
0.615
Vbyp_Vmin
Vbyp_Vmax
Spec limit
BYPASS VOLTAGE (V)
Spec limit
0.605
0.595
0.585
1.00E+11
PRE-RAD
1.00E+12
1.00E+13
1.00E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 6. ISL75052SEH bypass voltage at an input voltage of 3.6V as a function of 1MeV equivalent neutron irradiation at 2x1012n/cm2,
1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. Sample size for each cell was 5. The datasheet limits are 0.588V to 0.612V.
2.58
V2p5_VinMin_NL
V2p5_VinMin_1p5A
2.56
Spec limit
Spec limit
OUTPUT VOLTAGE (V)
2.54
2.52
2.5
2.48
2.46
2.44
1.00E+11
PRE-RAD
1.00E+12
1.00E+13
1.00E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 7. ISL75052SEH output voltage at minimum input voltage, 2.5V output voltage, no load and 1.5A output current, as a function of 1MeV
equivalent neutron irradiation at 2x1012n/cm2, 1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. Sample size for each cell was 5.
The datasheet limits are 2.4625V to 2.5375V.
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Variables Data Plots (Continued)
2.58
V2p5_Vin5V_NL
V2p5_Vin5V_1p5A
2.56
Spec limit
Spec limit
OUTPUT VOLTAGE (V)
2.54
2.52
2.5
2.48
2.46
2.44
1.00E+11
PRE-RAD
1.00E+12
NEUTRON FLUENCE
1.00E+13
1.00E+14
(n/cm2)
FIGURE 8. ISL75052SEH output voltage at 5.0V input voltage, 2.5V output voltage, no load and 1.5A output current, as a function of 1MeV
equivalent neutron irradiation at 2x1012n/cm2, 1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. Sample size for each cell was 5.
The datasheet limits are 2.4625V to 2.5375V.
10
D_V2p5_LineReg
8
Spec limit
6
Spec limit
LINE REGULATION (mV)
4
2
0
-2
-4
-6
-8
-10
1.00E+11
PRE-RAD
1.00E+12
NEUTRON FLUENCE
1.00E+13
1.00E+14
(n/cm2)
FIGURE 9. ISL75052SEH line regulation, 4.0V to 13.2V input voltage, as a function of 1MeV equivalent neutron irradiation at 2x1012n/cm2,
1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. Sample size for each cell was 5. The datasheet limits are -8.0mV to 8.0mV.
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Variables Data Plots (Continued)
10
V2p5_LoadReg
8
Spec limit
6
Spec limit
LOAD REGULATION (mV)
4
2
0
-2
-4
-6
-8
-10
1.00E+11
PRE-RAD
1.00E+12
1.00E+13
1.00E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 10. ISL75052SEH load regulation, 2.5V output voltage, 4.0V input voltage, 0 to 1.5A load, as a function of 1MeV equivalent neutron
irradiation at 2x1012n/cm2, 1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. Sample size for each cell was 5. The datasheet limits
are -9.0mV to 9.0mV.
10.3
V10_Vin10p5_NL
V10_Vin10p5_1p5A
OUTPUT VOLTAGE (V)
10.2
Spec limit
Spec limit
10.1
10
9.9
9.8
PRE-RAD
1.00E+11
1.00E+12
NEUTRON FLUENCE
1.00E+13
1.00E+14
(n/cm2)
FIGURE 11. ISL75052SEH output voltage at 10.5V input voltage, 10.0V output voltage, no load and 1.5A output current, as a function of 1MeV
equivalent neutron irradiation at 2x1012n/cm2, 1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. Sample size for each cell was 5.
The datasheet limits are 9.85V to 10.15V.
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Variables Data Plots (Continued)
10.3
V10_VinMax_NL
V10_VinMax_1p0A
OUTPUT VOLTAGE (V)
10.2
Spec limit
Spec limit
10.1
10
9.9
9.8
PRE-RAD
1.00E+11
1.00E+12
1.00E+13
1.00E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 12. ISL75052SEH output voltage at 13.2V input voltage, 10.0V output voltage, no load and 1.5A output current, as a function of 1MeV
equivalent neutron irradiation at 2x1012n/cm2, 1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. Sample size for each cell was 5.
The datasheet limits are 9.85V to 10.15V.
15
D_V10_LineReg
10
Spec limit
LINE REGULATION (mV)
Spec limit
5
0
-5
-10
-15
1.00E+11
PRE-RAD
1.00E+12
1.00E+13
1.00E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 13. ISL75052SEH line regulation, 10.0V to 13.2V input voltage, as a function of 1MeV equivalent neutron irradiation at 2x1012n/cm2,
1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. Sample size for each cell was 5. The datasheet limits are -10.0mV to 10.0mV.
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Variables Data Plots (Continued)
40
V10_LoadReg
30
LOAD REGULATION (mV)
20
Spec limit
Spec limit
10
0
-10
-20
-30
-40
1.00E+11
PRE-RAD
1.00E+12
1.00E+13
1.00E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 14. ISL75052SEH load regulation, 10.0V output voltage, 10.5V input voltage, 0 to 1.5A load, as a function of 1MeV equivalent neutron
irradiation at 2x1012n/cm2, 1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. Sample size for each cell was 5. The datasheet limits
are -36.0mV to 36.0mV.
450
VDO_3p6_500
VDO_3p6_1000
VDO_3p6_1500
Spec limit, 500mA
Spec limit, 1000mA
Spec limit, 1500mA
400
DROPOUT VOLTAGE (mV)
350
300
250
200
150
100
50
0
PRE-RAD
1.00E+11
1.00E+12
1.00E+13
1.00E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 15. ISL75052SEH dropout voltage at 3.6V output, 500mA, 1000mA and 1500mA output current, as a function of 1MeV equivalent
neutron irradiation at 2x1012n/cm2, 1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. Sample size for each cell was 5. The
datasheet limits are 160.0mV maximum at 500mA, 300.0mV at 1000mA and 400.0mV at 1500mA.
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Variables Data Plots (Continued)
450
D_VDO_12p7_500
D_VDO_12p7_1000
D_VDO_12p7_1500
Spec limit, 500mA
Spec limit, 1000mA
Spec limit, 1500mA
400
DROPOUT VOLTAGE (mV)
350
300
250
200
150
100
50
0
PRE-RAD
1.00E+11
1.00E+12
NEUTRON FLUENCE
1.00E+13
1.00E+14
(n/cm2)
FIGURE 16. ISL75052SEH dropout voltage at 12.7V output, 500mA, 1000mA and 1500mA output current, as a function of 1MeV equivalent
neutron irradiation at 2x1012n/cm2, 1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. Sample size for each cell was 5. The
datasheet limits are 160.0mV maximum at 500mA, 300.0mV at 1000mA and 400.0mV at 1500mA.
0.6
PG_Lkg
0.4
Spec limit
PGOOD LEAKAGE (µA)
Spec limit
0.2
0
-0.2
-0.4
-0.6
1.00E+11
PRE-RAD
1.00E+12
1.00E+13
1.00E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 17. ISL75052SEH PGOOD leakage as a function of 1MeV equivalent neutron irradiation at 2x1012n/cm2, 1x1013n/cm2, 3x1013n/cm2
and 1x1014n/cm2. Sample size for each cell was 5. The datasheet limits are -0.5µA to 0.5µA.
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Variables Data Plots (Continued)
450
PG_VOL_1ma
400
PG_VOL_10ma
Spec limit
350
Spec limit
PGOOD VOL (mV)
300
250
200
150
100
50
0
1.00E+11
PRE-RAD
1.00E+12
1.00E+13
1.00E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 18. ISL75052SEH PGOOD LOW and HIGH output voltage as a function of 1MeV equivalent neutron irradiation at 2x1012n/cm2,
1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. Sample size for each cell was 5. The data sheet limits are 100.0mV maximum (VOL)
and 400.0mV (VOH).
96
94
PGOOD THRESHOLD (%)
92
VmaxPG_ThresRising
VmaxPG_Thres_Falling
Spec limit, rising
Spec limit, rising
Spec limit, falling
Spec limit, falling
90
88
86
84
82
80
78
PRE-RAD
1.00E+11
1.00E+12
1.00E+13
1.00E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 19. ISL75052SEH PGOOD rising and falling threshold, 13.2V input voltage, as a function of 1MeV equivalent neutron irradiation at
2x1012n/cm2, 1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. Sample size for each cell was 5. The datasheet limits are 83% to
94% (rising) and 80% to 91% (falling).
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Variables Data Plots (Continued)
4.5
VmaxPG_Hys
4
Spec limit
PGOOD HYSTERESIS (%)
Spec limit
3.5
3
2.5
2
1.5
1.00E+11
PRE-RAD
1.00E+12
1.00E+13
1.00E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 20. ISL75052SEH PGOOD hysteresis, 13.2V input voltage, as a function of 1MeV equivalent neutron irradiation at 2x1012n/cm2,
1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. Sample size for each cell was 5. The datasheet limits are 1.75% to 4.0%.
96
94
VminPG_ThresRising
VminPG_Thres_Falling
Spec limit, rising
Spec limit, rising
Spec limit, falling
Spec limit, falling
PGOOD THRESHOLD (%)
92
90
88
86
84
82
80
78
PRE-RAD
1.00E+11
1.00E+12
1.00E+13
1.00E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 21. ISL75052SEH PGOOD rising and falling threshold, 4.0V input voltage, as a function of 1MeV equivalent neutron irradiation at
2x1012n/cm2, 1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. Sample size for each cell was 5. The datasheet limits are 83% to
94% (rising) and 80% to 91% (falling).
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Variables Data Plots (Continued)
4.5
VminPG_Hys
4
Spec limit
PGOOD HYSTERESIS (%)
Spec limit
3.5
3
2.5
2
1.5
1.00E+11
PRE-RAD
1.00E+12
1.00E+13
1.00E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 22. ISL75052SEH PGOOD hysteresis, 4.0V input voltage, as a function of 1MeV equivalent neutron irradiation at 2x1012n/cm2,
1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. Sample size for each cell was 5. The datasheet limits are 1.75% to 4.0%.
1.4
ENThrRisingVinMax
ENThrFallingVinMax
1.2
Spec limit
ENABLE THRESHOLD (V)
Spec limit
1
0.8
0.6
0.4
1.00E+11
PRE-RAD
1.00E+12
1.00E+13
1.00E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 23. ISL75052SEH Enable rising and falling threshold, 13.2V input voltage, as a function of 1MeV equivalent neutron irradiation at
2x1012n/cm2, 1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. Sample size for each cell was 5. The datasheet limits are 0.5V to
1.2V.
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Variables Data Plots (Continued)
350
ENHystVinMax
300
Spec limit
ENABLE HYSTERESIS (mV )
Spec limit
250
200
150
100
50
1.00E+11
PRE-RAD
1.00E+12
NEUTRON FLUENCE
1.00E+13
1.00E+14
(n/cm2)
FIGURE 24. ISL75052SEH Enable hysteresis, 13.2V input voltage, as a function of 1MeV equivalent neutron irradiation at 2x1012n/cm2,
1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. Sample size for each cell was 5. The datasheet limits are 75.0mV to 300.0mV.
1200
EN_TurnOn_Dly
Spec limit
1000
Spec limit
ENABLE DELAY (µs)
800
600
400
200
0
1.00E+11
PRE-RAD
1.00E+12
1.00E+13
1.00E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 25. ISL75052SEH Enable turnon delay as a function of 1MeV equivalent neutron irradiation at 2x1012n/cm2, 1x1013n/cm2,
3x1013n/cm2 and 1x1014n/cm2. Sample size for each cell was 5. The datasheet limits are 100.0µs to 1000µs.
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Variables Data Plots (Continued)
3500
ENABLE TO PGOOD DELAY (µs)
3000
EN_PG_Dly22uf
EN_PG_Dly200uf
Spec limit 22uF
Spec limit 200uF
2500
2000
1500
1000
500
0
PRE-RAD
1.00E+11
1.00E+12
1.00E+13
1.00E+14
NEUTRON FLUENCE (n/cm 2)
FIGURE 26. ISL75052SEH Enable to PGOOD delay, 22µF and 200µF, as a function of 1MeV equivalent neutron irradiation at 2x1012n/cm2,
1x1013n/cm2, 3x1013n/cm2 and 1x1014n/cm2. Sample size for each cell was 5. The data sheet limits are 2500µs (22µF) and
3000µs (200µF).
Conclusion
This report summarizes results of 1MeV equivalent neutron
testing of the ISL75052SEH low dropout voltage linear regulator.
The test was conducted in order to determine the sensitivity of
the part to Displacement Damage (DD) caused by neutron or
proton environments in space. Neutron fluences ranged from
2x1012n/cm2 to 1x1014n/cm2. This project was carried out in
collaboration with VPT, Inc. (Blacksburg, VA), and their support is
gratefully acknowledged.
The samples met all specifications (Bin 1) after 2x1011n/cm2
and 1x1013n/cm2. ATE testing showed rejects to the datasheet
limits after 3x1013n/cm2 and 1x1014n/cm2. These were
parametric failures, notably of the reference and output voltage,
which were at the ±1.5% specification after 3x1013n/cm2 and
exceeded a ±2.0% range after 1x1014n/cm2. The part may be
usable at 3x1013n/cm2 with some derating.
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Appendices
Reported Parameters
The limits are from the SMD and are provided for guidance only
as the part is not designed or guaranteed for the neutron
environment. A number of parameters are plotted in the same
figure (see for example Figure 2 on page 4, which plots the
neutron response of both the enable LOW and enable HIGH
currents) in order to save space.
TABLE 2. REPORTED PARAMETERS AND DATASHEET LIMITS
FIGURE
LIMIT, LOW
LIMIT, HIGH
UNITS
Enable LOW Current
-0.5
0.5
µA
Enable HIGH Current
-0.5
0.5
µA
3
Adjust Pin Bias Current
-0.7
0.7
µA
4
Shutdown Current
-
120.0
µA
4.0V in
Shutdown Current
-
300.0
µA
13.2V in
Adjust Pin Voltage
0.591
0.609
V
4.0V in
Adjust Pin Voltage
0.591
0.609
V
13.2V in
Bypass Pin Voltage
0.588
0.612
V
4.0V in
Bypass Pin Voltage
0.588
0.612
V
13.2V in
Output Voltage, 2.5V
2.4625
2.5375
V
4.0V in, no load
Output Voltage, 2.5V
2.4625
2.5375
V
4.0V in, 1.5A
Output Voltage, 2.5V
2.4625
2.5375
V
5V, no load
Output Voltage, 2.5V
2.4625
2.5375
V
5V, 1.5A
9
Line Regulation, 2.5V
-8.0
8.0
mV
4.0V to 13.2V
10
Load Regulation, 2.5V
-9.0
9.0
mV
4.0V in, 0 to 1.5A
11
Output Voltage, 10.0V
9.85
10.15
V
10.5V in, no load
Output Voltage, 10.0V
9.85
10.15
V
10.5V in, 1.5A
Output Voltage, 10.0V
9.85
10.15
V
13.2V in, no load
Output Voltage, 10.0V
9.85
10.15
V
13.2V in, 1.5A
13
Line Regulation, 10.0V
-10.0
10.0
mV
10.0V to 13.2V
14
Load Regulation, 10.0V
-36.0
36.0
mV
1.5V in, 0 to 1.5A
15
Dropout Voltage, 3.6V
-
160.0
mV
500mA output current
Dropout Voltage, 3.6V
-
300.0
mV
1000mA output current
Dropout Voltage, 3.6V
-
400.0
mV
1500mA output current
Dropout Voltage, 12.7V
-
160.0
mV
500mA output current
Dropout Voltage, 12.7V
-
300.0
mV
1000mA output current
Dropout Voltage, 12.7V
-
400.0
mV
1500mA output current
-0.5
0.5
µA
13.2V in, PGOOD at 5.5V
2
5
6
7
8
12
16
PARAMETER
NOTES
17
PGOOD Leakage
18
PGOOD VOL
-
100.0
mV
1.0mA load
PGOOD VOL
-
400.0
mV
10.0mA load
PGOOD Threshold, Rising
83
94
%
13.2V in, rising
PGOOD Threshold, Falling
80
91
%
13.2V in, falling
1.75
4.0
%
13.2V in
19
20
PGOOD Hysteresis
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TABLE 2. REPORTED PARAMETERS AND DATASHEET LIMITS (Continued)
FIGURE
21
PARAMETER
LIMIT, LOW
LIMIT, HIGH
UNITS
NOTES
PGOOD Threshold, Rising
83
94
%
4.0V in, rising
PGOOD Threshold, Falling
80
91
%
4.0V in, falling
1.75
4.0
%
13.2V in
22
PGOOD Hysteresis
23
Enable Threshold, Rising
0.5
1.2
V
13.2V in, rising
Enable Threshold, Falling
0.5
1.2
V
13.2V in, falling
24
Enable Hysteresis
75
300
mV
25
Enable Turn-On Delay
-
1000
µs
26
Enable to PGOOD Delay
-
2500
µs
Enable to PGOOD Delay
-
3000
µs
13.2V in
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cautioned to verify that the document is current before proceeding.
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