1N4148GH

Zowie Technology Corporation
1N4148GH
Silicon Epitaxial Planar Switching Diode
Lead free product
Halogen-free type
Max. 0.5
Min. 27.5
Max. 1.9
Applications
• High-speed switching
Black
Cathode Band
Black
Part No.
Features
• Fast switching speed
• Ultra-small surface mount package
• For general purpose switching applications
• High conductance
XXX
Max. 3.9
Min. 27.5
Glass Case DO-35
Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
VRM
100
V
Reverse Voltage
VR
75
V
IF(AV)
200
mA
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Power Dissipation
Junction Temperature
Storage Temperature Range
1)
REV. 0
at t = 1 s
at t = 1 ms
at t = 1 μs
Ptot
0.5
1
4
1)
500
Tj
200
O
Tstg
- 65 to + 200
O
IFSM
A
mW
C
C
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Zowie Technology Corporation
Zowie Technology Corporation
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
VF
-
1
V
IR
IR
IR
-
25
5
50
nA
µA
µA
V(BR)R
V(BR)R
100
75
-
V
V
Capacitance
at VR = 0, f = 1 MHz
Ctot
-
4
pF
Voltage Rise when Switching ON
tested with 50 mA Forward Pulses
tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz
Vfr
-
2.5
V
Reverse Recovery Time
at IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω
trr
-
4
ns
RthA
-
0.35 1)
K/mW
ηV
0.45
-
-
Forward Voltage
at IF = 10 mA
Leakage Current
at VR = 20 V
at VR = 75 V
at VR = 20 V, Tj = 150 OC
Reverse Breakdown Voltage
at IR = 100 µA
at IR = 5 µA
Thermal Resistance Junction to Ambient Air
Rectification Efficiency
at f = 100 MHz, VRF = 2 V
Vo
2nF
5K
~
~
~
VRF =2V
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
60
1)
Rectification Efficiency Measurement Circuit
REV. 0
Zowie Technology Corporation
Zowie Technology Corporation
Dynamic forward resistance
versus forward current
Forward characteristics
mA
10
1N 4148GH
3
1N 4148GH
10 4
Tj=25 oC
f=1KHz
5
2
10 2
o
Tj=100 C
iF
10 3
o
Tj=25 C
rf
10
5
2
10 2
5
1
2
10
10 -1
5
2
10 -2
0
1
2V
1
10 -1
10 -2
1
10 2 mA
10
VF
IF
Admissible power dissipation
versus ambient temperature
Relative capacitance
versus reverse voltage
Valid provided that leads at a distance of 8 mm from case
are kept at ambient temperature
mW
1000
1N 4148GH
Tj=25 oC
f=1MHz
900
1.1
800
P tot
1N 4148GH
Ctot(VR )
Ctot(0V)
700
1.0
600
500
0.9
400
300
0.8
200
100
0.7
0
0
200 oC
100
Tamb
REV. 0
0
0
2
4
6
8
10 V
VR
Zowie Technology Corporation
Zowie Technology Corporation
Leakage current
versus junction temperature
nA
10 4
1N 4148GH
5
2
10 3
IR
5
2
10 2
5
2
10
5
VR=20V
2
1
0
o
200 C
100
Tj
Admissible repetitive peak forward current
versus pulse duration
A
100
Valid provided that leads at a distance of 8 mm from case
are kept at ambient temperature
1N 4148GH
v=tp/T
I
5
4
3
IFRM
2
tp
10
IFRM
T=1/fp
t
v=0
T
5
4
3
0.1
2
0.2
1
0.5
5
4
3
2
0.1
10 -5
2
5
10 -4
2
5
10 -3
2
5
10 -2
2
5
10 -1
2
5
1
2
5
10 s
tp
REV. 0
Zowie Technology Corporation
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