Transistors with built-in Resistor UNR111x Series (UN111x Series) Silicon PNP epitaxial planar transistor Unit: mm For digital circuits (1.0) 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ 47 kΩ 4.7 kΩ 2.2 kΩ 4.7 kΩ (R2) 10 kΩ 22 kΩ 47 kΩ 47 kΩ 5.1 kΩ 10 kΩ 10 kΩ 22 kΩ 10 kΩ 10 kΩ 4.7 kΩ 3 2 (2.5) 1.25±0.05 (UN1110) (UN1111) (UN1112) (UN1113) (UN1114) (UN1115) (UN1116) (UN1117) (UN1118) (UN1119) (UN111D) (UN111E) (UN111F) (UN111H) (UN111L) 4.5±0.1 R 0.9 R 0.7 ■ Resistance by Part Number UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 UNR111D UNR111E UNR111F UNR111H UNR111L 3.5±0.1 (0.4) • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (1.0) (1.5) 1.0±0.1 ■ Features • • • • • • • • • • • • • • • 2.5±0.1 6.9±0.1 (1.5) 1 (2.5) 1: Base 2: Collector 3: Emitter M-A1 Package Internal Connection R1 B C R2 E ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −50 V Collector-emitter voltage (Base open) VCEO −50 V Collector current IC −100 mA Total power dissipation PT 400 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) The part numbers in the parenthesis show conventional part number. Publication date: October 2003 SJH00001BED 1 UNR111x Series ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −50 Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0 − 0.1 Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0 − 0.5 µA Emitter-base IEBO VEB = −6 V, IC = 0 − 0.5 mA UNR1111 Conditions Min Typ Max V V cutoff current UNR1112/1114/111D/111E − 0.2 (Collector open) UNR1113 − 0.1 transfer ratio µA − 0.01 UNR1110/1115/1116/1117 UNR111F/111H −1.0 UNR1119 −1.5 UNR1118/111L −2.0 Forward current UNR1111 Unit VCE = −10 V, IC = −5 mA hFE UNR1112/111E 35 60 UNR1113/1114 80 UNR1110 */1115 */1116 */ 1117 * 160 UNR1118/111L 20 UNR1119/111D/111F/111H Collector-emitter saturation voltage 460 30 VCE(sat) IC = −10 mA, IB = − 0.3 mA Output voltage high-level VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ Output voltage low-level VOL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ UNR1113 VCC = −5 V, VB = −3.5 V, RL = 1 kΩ UNR111D VCC = −5 V, VB = −10 V, RL = 1 kΩ − 0.25 V − 0.2 V −4.9 V VCC = −5 V, VB = −6 V, RL = 1 kΩ UNR111E Transition frequency fT Input resistance UNR1111/1114/1115 R1 VCB = −10 V, IE = 2 mA, f = 200 MHz 80 −30% UNR1112/1117 10 MHz +30% kΩ 1.2 22 UNR1110/1113/111D/111E 47 UNR1116/111F/111L 4.7 UNR1118 0.51 UNR1119 1 UNR111H 2.2 Resistance ratio UNR1111/1112/1113/111L R1/R2 0.8 1.0 UNR1114 0.17 0.21 0.25 UNR1118/1119 0.08 0.1 0.12 UNR111D 4.7 UNR111E 2.14 UNR111F 0.47 UNR111H 0.17 0.22 0.27 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification (UNR1110/1115/1116/1117) 2 Rank Q R S hFE 160 to 260 210 to 340 290 to 460 SJH00001BED UNR111x Series Common characteristics chart PT Ta Total power dissipation PT (mW) 500 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (°C) Characteristics charts of UNR1110 IC VCE VCE(sat) IC −60 − 0.2 mA −40 − 0.1 mA −20 0 −2 0 −4 −6 −8 −10 −12 IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 −25°C − 0.01 −0.1 Collector-emitter voltage VCE (V) −1 Ta = 75°C 200 4 3 2 25°C −25°C 100 0 −1 −100 −10 −100 −1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 300 IO VIN −104 f = 1 MHz IE = 0 Ta = 25°C 5 −10 VCE = –10 V Collector current IC (mA) Cob VCB 6 hFE IC 400 Forward current transfer ratio hFE Collector current IC (mA) Ta = 25°C IB = −1.0 mA − 0.9 mA −100 − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA −100 Collector-emitter saturation voltage VCE(sat) (V) −120 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) −1 − 0.4 − 0.6 − 0.8 −1.0 −1.2 Input voltage VIN (V) SJH00001BED −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) 3 UNR111x Series Characteristics charts of UNR1111 IC VCE VCE(sat) IC − 0.9 mA Collector current IC (mA) −120 − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA −40 − 0.2 mA − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 IC / IB = 10 −10 −1 − 0.1 −25°C − 0.01 − 0.1 −1 25°C 120 −25°C 80 40 0 −1 −100 4 3 2 −100 −1 000 VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C −10 Collector current IC (mA) IO VIN −104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob −10 Ta = 75°C VCE = −10 V Collector current IC (mA) Cob VCB 5 Ta = 75°C 25°C Collector-emitter voltage VCE (V) 6 hFE IC 160 Forward current transfer ratio hFE Ta = 25°C IB = −1.0 mA Collector-emitter saturation voltage VCE(sat) (V) −100 −160 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 − 0.4 −100 − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Collector-base voltage VCB (V) Characteristics charts of UNR1112 VCE(sat) IC Ta = 25°C IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA Collector current IC (mA) −120 − 0.5 mA −80 − 0.4 mA − 0.3 mA − 0.2 mA −40 − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) 4 Collector-emitter saturation voltage VCE(sat) (V) −100 hFE IC −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 − 0.1 400 IC / IB = 10 −25°C −1 −10 Collector current IC (mA) SJH00001BED −100 VCE = −10 V Forward current transfer ratio hFE IC VCE −160 300 Ta = 75°C 200 25°C −25°C 100 0 −1 −10 −100 Collector current IC (mA) −1 000 UNR111x Series IO VIN 4 3 2 −100 VO = −5 V Ta = 25°C −103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 5 VIN IO −104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 − 0.4 −100 − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 Input voltage VIN (V) Collector-base voltage VCB (V) −1 −10 −100 Output current IO (mA) Characteristics charts of UNR1113 IC VCE VCE(sat) IC IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA −120 Collector current IC (mA) Ta = 25°C − 0.6 mA − 0.5 mA − 0.4 mA −80 − 0.3 mA − 0.2 mA −40 − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 Collector-emitter saturation voltage VCE(sat) (V) −100 IC / IB = 10 −10 −1 25°C −25°C − 0.01 − 0.1 −1 25°C 200 −25°C 100 0 −1 −100 3 2 −10 −100 −1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) 4 Ta = 75°C 300 IO VIN −104 f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob −10 VCE = −10 V Collector current IC (mA) Cob VCB 5 Ta = 75°C − 0.1 Collector-emitter voltage VCE (V) 6 hFE IC 400 Forward current transfer ratio hFE −160 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) −1 − 0.4 − 0.6 − 0.8 −1.0 −1.2 Input voltage VIN (V) SJH00001BED −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) 5 UNR111x Series Characteristics charts of UNR1114 IC VCE VCE(sat) IC IB = −1.0 mA Collector current IC (mA) −120 − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA − 0.2 mA −40 − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 −1 −10 Ta = 75°C 200 25°C −25°C 100 0 −1 −100 4 3 2 −100 −1 000 VIN IO VO = −5 V Ta = 25°C −103 −1 000 VO = − 0.2 V Ta = 25°C −100 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C −10 Collector current IC (mA) IO VIN −104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 300 Collector current IC (mA) Cob VCB 5 VCE = −10 V −25°C − 0.01 − 0.1 Collector-emitter voltage VCE (V) 6 hFE IC 400 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) −100 −160 −102 −10 −10 −1 1 0 − 0.1 −1 −10 −1 − 0.4 −100 − 0.6 − 0.8 −1.0 −1.2 − 0.1 − 0.1 −1.4 Input voltage VIN (V) Collector-base voltage VCB (V) −1 −10 −100 Output current IO (mA) Characteristics charts of UNR1115 VCE(sat) IC IB = −1.0 mA Collector current IC (mA) −120 Ta = 25°C − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA − 0.4 mA −80 − 0.3 mA − 0.2 mA −40 − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) 6 Collector-emitter saturation voltage VCE(sat) (V) −100 hFE IC IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 −0.1 400 VCE = −10 V Forward current transfer ratio hFE IC VCE −160 300 Ta = 75°C 200 25°C −25°C 100 −25°C −1 −10 Collector current IC (mA) SJH00001BED −100 0 −1 −10 −100 Collector current IC (mA) −1 000 UNR111x Series IO VIN 4 3 2 VO = −5 V Ta = 25˚C −103 −100 Input voltage VIN (V) 5 VIN IO −104 f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 − 0.4 −10 − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Collector-base voltage VCB (V) Characteristics charts of UNR1116 IC VCE VCE(sat) IC − 0.9 mA − 0.8 mA Collector current IC (mA) −120 − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA − 0.2 mA −40 − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 −1 −10 Ta = 75°C 200 −25°C 0 −1 −100 4 3 2 −10 −100 −1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 25°C 100 IO VIN −104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 300 Collector current IC (mA) Cob VCB 5 VCE = −10 V −25°C − 0.01 − 0.1 Collector-emitter voltage VCE (V) 6 hFE IC 400 Forward current transfer ratio hFE Ta = 25°C IB = −1.0 mA Collector-emitter saturation voltage VCE(sat) (V) −100 −160 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) −1 − 0.4 − 0.6 − 0.8 −1.0 −1.2 Input voltage VIN (V) SJH00001BED −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) 7 UNR111x Series Characteristics charts of UNR1117 IC VCE VCE(sat) IC IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA − 0.4 mA −80 −60 − 0.3 mA −40 − 0.2 mA −20 0 − 0.1 mA −2 0 −4 −6 −8 −10 Collector-emitter voltage VCE −12 IC / IB = 10 −10 Ta = 75°C −1 25°C − 0.1 −25°C − 0.01 − 0.1 (V) −1 4 3 2 Ta = 75°C 200 25°C 100 0 −1 −100 −25°C −10 −100 −1 000 Collector current IC (mA) VIN IO −100 VO = −5 V Ta = 25°C −103 Input voltage VIN (V) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 300 IO VIN −104 f = 1 MHz IE = 0 Ta = 25°C 5 −10 VCE = −10 V Collector current IC (mA) Cob VCB 6 hFE IC 400 Forward current transfer ratio hFE Ta = 25°C −100 Collector current IC (mA) −100 Collector-emitter saturation voltage VCE(sat) (V) −120 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 −0.1 −1 −10 −1 − 0.4 −100 − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 Input voltage VIN (V) Collector-base voltage VCB (V) −1 −10 −100 Output current IO (mA) Characteristics charts of UNR1118 VCE(sat) IC Ta = 25°C Collector current IC (mA) −200 IB = − 1.0 mA − 0.9 mA −160 − 0.8 mA − 0.7 mA −120 − 0.6 mA − 0.5 mA − 0.4 mA − 0.3 mA −80 −40 − 0.2 mA − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) 8 Collector-emitter saturation voltage VCE(sat) (V) −100 hFE IC IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 − 0.1 160 VCE = −10 V Forward current transfer ratio hFE IC VCE −240 120 Ta = 75°C 80 25°C −25°C 40 −25°C −1 −10 Collector current IC (mA) SJH00001BED −100 0 −1 −10 −100 Collector current IC (mA) −1 000 UNR111x Series IO VIN f = 1 MHz IE = 0 Ta = 25°C 4 3 2 VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) 5 VIN IO −104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 − 0.4 −100 − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Collector-base voltage VCB (V) Characteristics charts of UNR1119 IC VCE VCE(sat) IC −100 Collector current IC (mA) −200 IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA −160 −120 −80 − 0.6 mA − 0.5 mA − 0.4 mA − 0.3 mA − 0.2 mA − 0.1 mA −40 0 −2 0 −4 −6 −8 −10 −12 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 − 0.1 −1 −10 Ta = 75°C 80 0 −1 −100 3 2 −10 −100 −1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) 4 25°C −25°C 40 IO VIN −104 f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 120 Collector current IC (mA) Cob VCB 5 VCE = −10 V −25°C Collector-emitter voltage VCE (V) 6 hFE IC 160 IC / IB = 10 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) −240 −102 −10 VO = −0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) −1 − 0.4 − 0.6 − 0.8 −1.0 −1.2 Input voltage VIN (V) SJH00001BED −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) 9 UNR111x Series Characteristics charts of UNR111D IC VCE Ta = 25˚C −40 − 0.3 mA −30 − 0.2 mA − 0.7 mA − 0.6 mA − 0.5 mA − 0.4 mA −20 − 0.1 mA −10 0 −2 0 −4 −6 −8 −10 −12 IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 − 0.1 −1 25°C 40 0 −1 −100 3 2 −10 −100 −1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) 4 −25°C 80 IO VIN Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob −10 −104 f = 1 MHz IE = 0 Ta = 25°C Ta = 75°C 120 Collector current IC (mA) Cob VCB 5 VCE = −10 V −25°C Collector-emitter voltage VCE (V) 6 hFE IC 160 Forward current transfer ratio hFE IB = − 1.0 mA − 0.9 mA − 0.8 mA −50 Collector current IC (mA) VCE(sat) IC −100 Collector-emitter saturation voltage VCE(sat) (V) −60 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 −1.5 −100 −2.0 −2.5 −3.0 −3.5 −4.0 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Collector-base voltage VCB (V) Characteristics charts of UNR111E −40 − 0.3 mA −30 − 0.6 mA − 0.5 mA − 0.4 mA −20 − 0.2 mA − 0.1 mA −10 0 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) 10 Collector-emitter saturation voltage VCE(sat) (V) IB = −1.0 mA Ta = 25°C − 0.9 mA − 0.8 mA − 0.7 mA −50 Collector current IC (mA) VCE(sat) IC −100 hFE IC IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 − 0.1 400 −25°C −1 −10 Collector current IC (mA) SJH00001BED VCE = −10 V Forward current transfer ratio hFE IC VCE −60 −100 300 200 Ta = 75°C 100 0 −1 25°C −25°C −10 −100 Collector current IC (mA) −1 000 UNR111x Series IO VIN 4 3 2 VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) 5 VIN IO −104 f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 −1.5 −100 −2.0 −2.5 −3.0 −3.5 −4.0 − 0.01 − 0.1 Input voltage VIN (V) Collector-base voltage VCB (V) −1 −10 −100 Output current IO (mA) Characteristics charts of UNR111F IC VCE VCE(sat) IC IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA Collector current IC (mA) −200 −160 −120 − 0.5 mA −80 − 0.4 mA − 0.3 mA −40 0 − 0.2 mA −2 0 −4 −6 − 0.1 mA −10 −12 −8 IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 −1 −10 Ta = 75°C 25°C 80 0 −1 −100 3 2 −10 −100 −1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) 4 −25°C 40 IO VIN −104 f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 120 Collector current IC (mA) Cob VCB 5 VCE = −10 V −25°C − 0.01 − 0.1 Collector-emitter voltage VCE (V) 6 hFE IC 160 Forward current transfer ratio hFE Ta = 25°C −100 Collector-emitter saturation voltage VCE(sat) (V) −240 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) −1 − 0.4 − 0.6 − 0.8 −1.0 −1.2 Input voltage VIN (V) SJH00001BED −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) 11 UNR111x Series Characteristics charts of UNR111H IC VCE VCE(sat) IC −100 Collector current IC (mA) −100 −80 IB = − 0.5 mA − 0.4 mA −60 − 0.3 mA −40 − 0.2 mA −20 − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 −1 Ta = 75°C 25°C −0.1 −25°C −0.01 −1 −100 160 Ta = 75°C 120 25°C 80 40 0 −0.1 −1 000 −25°C −1 −10 −100 Collector current IC (mA) VIN IO −100 f = 1 MHz IE = 0 Ta = 25°C Input voltage VIN (V) Collector output capacitance C (pF) (Common base, input open circuited) ob −10 VCE = −10 V 200 Collector current IC (mA) Cob VCB 5 IC / IB = 10 −10 Collector-emitter voltage VCE (V) 6 hFE IC 240 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) −120 4 3 2 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 −1 −10 −100 − 0.01 − 0.1 Collector-base voltage VCB (V) −1 −10 −100 Output current IO (mA) Characteristics charts of UNR111L VCE(sat) IC Ta = 25°C Collector current IC (mA) −200 −160 IB = −1.0 mA −120 − 0.8 mA − 0.6 mA −80 − 0.4 mA −40 − 0.2 mA 0 0 –2 –4 –6 –8 –10 –12 Collector-emitter voltage VCE (V) 12 Collector-emitter saturation voltage VCE(sat) (V) −100 hFE IC −10 −1 Ta = 75°C 25°C −25°C − 0.1 − 0.01 −1 240 IC / IB = 10 Forward current transfer ratio hFE IC VCE −240 −10 −100 Collector current IC (mA) SJH00001BED −1 000 VCE = −10 V 200 160 120 80 Ta = 75°C 25°C −25°C 40 0 −1 −10 −100 Collector current IC (mA) −1 000 UNR111x Series VIN IO f = 1 MHz IE = 0 Ta = 25°C 5 −100 Input voltage VIN (V) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 4 3 2 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 −1 −10 −100 Collector-base voltage VCB (V) − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) SJH00001BED 13 Request for your special attention and precautions in 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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP