SSCD115H

ZOWIE
Schottky Barrier Diode
(150V~200V / 1.0A)
SSCD115H AND SSCD120H
OUTLINE DIMENSIONS
FEATURES
* Halogen-free type
1.60
Typ.
Case : 1206
Compliance to RoHS product
Lead less chip form, no lead damage
Low power loss, High efficiency
High current capability, low VF
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
1.90 ± 0.2
*
*
*
*
*
Unit : mm
Mounting Pad Layout
3.40 ± 0.2
2.00
MAX.
40
R0.
APPLICATION
Switching mode power supply applications
Portable equipment battery applications
High frequency rectification
DC / DC Converter
Telecommunication
0.70 ± 0.2
0.70 ± 0.2
1.50
MIN.
1.0
MIN.
4.0
REF.
+ 0.2
0.96- 0.1
*
*
*
*
*
Equivalent : SOD-123
MECHANICAL DATA
Case : Packed with FRP substrate and epoxy underfilled
Terminals : Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity : Laser Cathode band marking
MARKING
A15 .
PACKING
Voltage class: 15 = 150V, 20 = 200V
* 3,000 pieces per 7" (178mm ± 2mm) reel
* 4 reels per box
* 6 boxes per carton
o
Absolute Maximum Ratings (Ta = 25 C)
Rating
ITEM
Symbol
Repetitive peak reverse voltage
VRRM
Average forward current
IF(AV)
Peak forward surge current
IFSM
Operating junction temperature Range
Conditions
SSCD115H
150
TSTG
Storage temperature Range
200
8.3ms single half sine-wave
Tj
Unit
SSCD120H
V
1.0
A
20
A
-55 to +150
o
C
-55 to +150
o
C
o
Electrical characteristics (Ta = 25 C)
ITEM
Forward voltage (NOTE 1)
Repetitive peak reverse current
Junction capacitance
Thermal resistance
Symbol
Conditions
Type
Min.
Typ.
Max.
Unit
IF = 1.0A
SSCD115H
-
0.83
0.88
V
IF = 1.0A
SSCD120H
-
0.86
0.90
V
VR = Max. VRRM , Ta = 25 oC
-
1.00
50
uA
VF
IRRM
VR = 4V, f = 1.0 MHz
-
110
-
Rth(JA)
Cj
Junction to ambient (NOTE 2)
-
88
-
o
C/W
pF
Rth(JL)
Junction to lead (NOTE 2)
-
28
-
o
C/W
NOTES : (1) Pulse test width PW=300usec , 1% duty cycle.
(2) Mounted on P.C. board with 0.2 x 0.2"(5.0 x5.0mm) copper pad areas.
REV. 1
2013/05
ZOWIE
SSCD115H AND SSCD120H
(150V~200V/1.0A)
FIG.1 - FORWARD CURRENT DERATING CURVE
25
1.0
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED ON
0.2X0.2"(5.0X5.0mm)
COPPER PAD AREAS
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
0.5
0
8.3ms Single Half Sine-Wave
20
15
10
5
0
0
25
50
75
100
125
150
1
175
10
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
10
IINSTANTANEOUS FORWARD CURRENT, (A)
100
NUMBER OF CYCLES AT 60Hz
o
LEAD TEMPERATURE, C
1.00
0.10
o
Ta=25 C
0.01
0.001
100
o
TJ=125 C
10
o
TJ=100 C
1.0
o
TJ=25 C
0.10
0.01
0.1 0.2
0.3
0.4
0.5
0.6 0.7
0.8
0.9
1.0
0
1.1
FORWARD VOLTAGE, (V)
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, pF
400
o
TJ = 25 C
f=1.0MHz
Vsig=50mVP-P
100
10
.1
1.0
10
100
REVERSE VOLTAGE, VOLTS
REV. 1
2013/05