ZOWIE Low VF Schottky Barrier Diode (20V~40V / 1.0A) SSCD102LSH AND SSCD104LSH OUTLINE DIMENSIONS FEATURES Halogen-free type Compliance to RoHS product Lead less chip form, no lead damage Low power loss, High efficiency High current capability Low forward voltage drop Plastic package has Underwriters Laboratory Flammability Classification 94V-0 1.60 ± 0.1 Case : 1206-S Unit : mm Mounting Pad Layout 3.40 ± 0.1 2.00 MAX. 40 R0. 1.50 Typ. * * * * * * * 1.50 MIN. APPLICATION 0.70 ± 0.2 Switching mode power supply applications Portable equipment battery applications High frequency rectification DC / DC Converter Telecommunication 0.70 ± 0.2 1.0 MIN. 4.0 REF. 0.93 ± 0.05 * * * * * Equivalent : SOD-123 MECHANICAL DATA Case : Packed with FRP substrate and epoxy underfilled Terminals : Pure Tin plated (Lead-Free), solderable per MIL-STD-750, Method 2026. Polarity : Laser Cathode band marking Weight : 0.012 gram MARKING A2 LS . PACKING Voltage class: 2 = 20V, 4 = 40V * 3,000 pieces per 7" (178mm ± 2mm) reel * 4 reels per box * 6 boxes per carton o Absolute Maximum Ratings (Ta = 25 C) Rating ITEM Symbol Repetitive peak reverse voltage VRRM Average forward current IF(AV) Peak forward surge current IFSM Operating junction temperature Range Conditions SSCD104LSH 20 8.3ms single half sine-wave Tj TSTG Storage temperature Range SSCD102LSH Unit 40 V 1.0 A 25 A -55 to +125 o C -55 to +150 o C o Electrical characteristics (Ta = 25 C) ITEM Forward voltage (NOTE 1) Repetitive peak reverse current (NOTE 1) Junction capacitance Symbol VF IRRM Cj Rth(JA) Conditions Min. Typ. Max. Unit IF = 0.5A - 0.31 - IF = 1.0A - 0.37 0.38 VR = Max. VRRM , Ta = 25 oC - 0.30 1.0 mA VR = 4V, f = 1.0 MHz - 115 - pF Junction to ambient (NOTE 2) - 88 - o C/W - o C/W V Thermal resistance Rth(JL) Junction to lead (NOTE 2) - 28 NOTES : (1) Pulse test width PW=300usec , 1% duty cycle. (2) Mounted on P.C. board with 0.2 x 0.2"(5.0 x5.0mm) copper pad areas. (3) Preliminary draft. REV. 2 2013/05 ZOWIE SSCD102LSH AND SSCD104LSH FIG.1 - FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 30 RESISTIVE OR INDUCTIVE LOAD P.C.B. MOUNTED ON 0.2X0.2"(5.0X5.0mm) COPPER PAD AREAS 8.3ms Single Half Sine-Wave (JEDEC Method) PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 1.0 0.5 25 20 15 10 5 0 0 0 25 50 75 100 125 150 1 175 10 o 100 NUMBER OF CYCLES AT 60Hz LEAD TEMPERATURE, C FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS 100 INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES 10.00 IINSTANTANEOUS FORWARD CURRENT, AMPERES (20V~40V / 1.0A) 1.00 0.10 10 o TJ=100 C 1.0 o TJ=25 C 0.10 0.01 0.01 .001 0 0.1 0.2 0.3 0.4 0.5 0.6 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE 400 JUNCTION CAPACITANCE, pF o TJ = 25 C f=1.0MHz Vsig=50mVP-P 100 10 0 1.0 10 100 REVERSE VOLTAGE, VOLTS REV. 2 2013/05