Data Sheet

PIMZ2; PUMZ2
NPN/PNP general-purpose double transistors
Rev. 06 — 17 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN/PNP general-purpose double transistors.
Table 1.
Product overview
Type number
Package
Configuration
NXP
JEITA
PIMZ2
SOT457
SC-74
NPN/PNP double transistors
PUMZ2
SOT363
SC-88
NPN/PNP double transistors
1.2 Features
„ Simplified circuit design
„ Reduced component count
„ Reduced pick and place costs
1.3 Applications
„ General-purpose switching and amplification
1.4 Quick reference data
Table 2.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter voltage
open base
-
-
50
V
IC
collector current (DC)
-
-
150
mA
PIMZ2; PUMZ2
NXP Semiconductors
NPN/PNP general-purpose double transistors
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
Symbol
PIMZ2 (SOT457)
1
collector TR2
2
emitter TR2
3
collector TR1
4
emitter TR1
5
base TR1
6
base TR2
6
5
4
1
2
3
6
5
4
TR1
TR2
1
2
3
sym082
PUMZ2 (SOT363)
1
emitter TR1
2
base TR1
3
base TR2
4
collector TR2
5
emitter TR2
6
collector TR1
6
5
4
6
5
4
TR2
TR1
1
2
3
1
2
3
sym083
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
Version
PIMZ2
SC-74
plastic surface mounted package; 6 leads
SOT457
PUMZ2
SC-88
plastic surface mounted package; 6 leads
SOT363
4. Marking
Table 5.
Marking codes
Type number
Marking code[1]
PIMZ2
M6
PUMZ2
GZ*
[1]
* = -: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PIMZ2_PUMZ2_6
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 06 — 17 November 2009
2 of 9
PIMZ2; PUMZ2
NXP Semiconductors
NPN/PNP general-purpose double transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
-
60
V
VCEO
collector-emitter voltage
open base
-
50
V
VEBO
emitter-base voltage
open collector
-
7
V
IC
collector current (DC)
-
150
mA
ICM
peak collector current
-
200
mA
IBM
peak base current
-
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT457
[1]
-
200
mW
SOT363
[1]
-
180
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Per device
total power dissipation
Ptot
[1]
Tamb ≤ 25 °C
SOT457
[1]
-
300
mW
SOT363
[1]
-
300
mW
Device mounted on an FR4 printed-circuit board.
6. Thermal characteristics
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
Rth(j-a)
thermal resistance from
junction to ambient
Tamb ≤ 25 °C
SOT457
[1]
-
-
625
K/W
SOT363
[1]
-
-
694
K/W
SOT457
[1]
-
-
417
K/W
SOT363
[1]
-
-
417
K/W
Per device
Rth(j-a)
[1]
thermal resistance from
junction to ambient
Tamb ≤ 25 °C
Device mounted on an FR4 printed-circuit board.
PIMZ2_PUMZ2_6
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 06 — 17 November 2009
3 of 9
PIMZ2; PUMZ2
NXP Semiconductors
NPN/PNP general-purpose double transistors
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
-
-
100
nA
VCB = 60 V; IE = 0 A; Tj = 150 °C
-
-
50
μA
nA
Per transistor; for the PNP transistor with negative polarity; unless otherwise specified
ICBO
collector-base cut-off current VCB = 60 V; IE = 0 A
IEBO
emitter-base cut-off current
VEB = 7 V; IC = 0 A
-
-
100
hFE
DC current gain
VCE = 6 V; IC = 1 mA
120
250
560
-
-
−500
TR1 (PNP)
VCEsat
collector-emitter saturation
voltage
IC = −50 mA; IB = −5 mA
fT
transition frequency
IE = −2 mA; VCE = −12 V; f = 100 MHz
-
190
-
MHz
Cc
collector capacitance
IE = ie = 0 A; VCB = −12 V; f = 1 MHz
-
2.3
5
pF
mV
TR2 (NPN)
VCEsat
collector-emitter saturation
voltage
IC = 50 mA; IB = 5 mA
-
-
250
mV
fT
transition frequency
IE = 2 mA; VCE = 12 V; f = 100 MHz
100
-
-
MHz
Cc
collector capacitance
IE = ie = 0 A; VCB = 12 V; f = 1 MHz
-
-
3
pF
PIMZ2_PUMZ2_6
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 06 — 17 November 2009
4 of 9
PIMZ2; PUMZ2
NXP Semiconductors
NPN/PNP general-purpose double transistors
8. Package outline
Plastic surface-mounted package (TSOP6); 6 leads
D
SOT457
E
B
y
A
HE
6
5
X
v M A
4
Q
pin 1
index
A
A1
c
1
2
3
Lp
bp
e
w M B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
A1
bp
c
D
E
e
HE
Lp
Q
v
w
y
1.1
0.9
0.1
0.013
0.40
0.25
0.26
0.10
3.1
2.7
1.7
1.3
0.95
3.0
2.5
0.6
0.2
0.33
0.23
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOT457
Fig 1.
JEITA
SC-74
EUROPEAN
PROJECTION
ISSUE DATE
05-11-07
06-03-16
Package outline SOT457 (SC-74)
PIMZ2_PUMZ2_6
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 06 — 17 November 2009
5 of 9
PIMZ2; PUMZ2
NXP Semiconductors
NPN/PNP general-purpose double transistors
Plastic surface-mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
5
v M A
4
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOT363
Fig 2.
JEITA
SC-88
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
Package outline SOT363 (SC-88)
PIMZ2_PUMZ2_6
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 06 — 17 November 2009
6 of 9
PIMZ2; PUMZ2
NXP Semiconductors
NPN/PNP general-purpose double transistors
9. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PIMZ2_PUMZ2_6
20091117
Product data sheet
-
PIMZ2_PUMZ2_5
Modifications:
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•
•
•
Table 3 “Pinning”: updated
Figure 1 “Package outline SOT457 (SC-74)”: updated
Figure 2 “Package outline SOT363 (SC-88)”: updated
PIMZ2_PUMZ2_5
20041124
Product data sheet
-
PIMZ2_PUMZ2_4
PIMZ2_PUMZ2_4
20031217
Product specification
-
PIMZ2_2
PIMZ2_2
20030714
Product specification
-
PIMZ2_1
PIMZ2_1
20030602
Objective specification
-
-
PIMZ2_PUMZ2_6
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 06 — 17 November 2009
7 of 9
PIMZ2; PUMZ2
NXP Semiconductors
NPN/PNP general-purpose double transistors
10. Legal information
10.1 Data sheet status
Document status[1][2]
Product status[3]
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
Definition
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
10.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
10.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
11. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PIMZ2_PUMZ2_6
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 06 — 17 November 2009
8 of 9
PIMZ2; PUMZ2
NXP Semiconductors
NPN/PNP general-purpose double transistors
12. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
10.1
10.2
10.3
10.4
11
12
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
General description . . . . . . . . . . . . . . . . . . . . .
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . .
Quick reference data . . . . . . . . . . . . . . . . . . . .
Pinning information . . . . . . . . . . . . . . . . . . . . . .
Ordering information . . . . . . . . . . . . . . . . . . . . .
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal characteristics . . . . . . . . . . . . . . . . . .
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . .
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .
Legal information. . . . . . . . . . . . . . . . . . . . . . . .
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Contact information. . . . . . . . . . . . . . . . . . . . . .
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1
1
1
1
2
2
2
3
3
4
5
7
8
8
8
8
8
8
9
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 17 November 2009
Document identifier: PIMZ2_PUMZ2_6
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