Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PEMZ7
NPN/PNP general purpose
transistors
Product data sheet
Supersedes data of 2001 Sep 25
2001 Nov 07
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistors
FEATURES
PEMZ7
PINNING
• 300 mW total power dissipation
PIN
• Very small 1.6 × 1.2 mm ultra thin package
1, 4
emitter
TR1; TR2
• Self alignment during soldering due to straight leads
2, 5
base
TR1; TR2
• Low collector capacitance
6, 3
collector
TR1; TR2
handbook, halfpage
6
5
DESCRIPTION
• Low VCEsat
• High current capabilities
• Improved thermal behaviour due to flat leads
• Reduced required PCB area
• Reduced pick and place costs.
4
6
5
4
APPLICATIONS
TR2
• Heavy duty battery powered equipment (automotive,
telecom and audio-video) such as motor and lamp
drivers
TR1
1
• VCEsat critical applications such as latest low supply
voltage IC applications
Top view
2
1
3
2
3
MAM456
• All battery driven equipment, to save battery power.
DESCRIPTION
Fig.1 Simplified outline (SOT666) and symbol.
NPN/PNP low VCEsat transistor pair in a SOT666 plastic
package.
MARKING
TYPE NUMBER
PEMZ7
2001 Nov 07
MARKING CODE
Z7
2
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistors
PEMZ7
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
−
15
V
VCEO
collector-emitter voltage
open base
−
12
V
VEBO
emitter-base voltage
open collector
−
6
V
IC
collector current (DC)
−
500
mA
ICM
peak collector current
−
1
A
IBM
peak base current
−
100
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
−
300
mW
Tamb ≤ 25 °C; note 1
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
notes 1 and 2
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
2001 Nov 07
3
VALUE
UNIT
416
K/W
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistors
PEMZ7
CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
VCB = 15 V; IE = 0
−
−
100
nA
VCB = 15 V; IE = 0; Tj = 150 °C
−
−
50
μA
VEB = 5 V; IC = 0
−
−
100
nA
DC current gain
VCE = 2 V; IC = 10 mA
200
−
−
VCEsat
collector-emitter saturation
voltage
IC = 200 mA; IB = 10 mA
−
−
220
mV
fT
transition frequency
IC = 100 mA; VCE = 5 V;
f = 100 MHz
250
420
−
MHz
100
280
−
MHz
TR1 (NPN)
−
4.4
6
pF
TR2 (PNP)
−
−
10
pF
ICBO
collector-base cut-off current
IEBO
emitter-base cut-off current
hFE
TR1 (NPN)
TR2 (PNP)
Cc
collector capacitance
VCB = 10 V; IE = Ie = 0; f = 1 MHz
MHC014
600
MLD672
1200
handbook, halfpage
handbook, halfpage
hFE
(1)
(3)
(4)
IC
500
(2)
(1)
(mA)
(5)
800
400
(6)
(2)
(7)
300
(8)
200
400
(3)
(9)
100
(10)
0
10−1
1
10
102
0
103
0
4
2
6
IC (mA)
8
10
VCE (V)
TR1 (NPN); Tamb = 25 °C.
(1) IB = 4.60 mA
TR1 (NPN); VCE = 2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.2
(2) IB = 4.14 mA
(3) IB = 3.68 mA
(4) IB = 3.22 mA
DC current gain as a function of collector
current; typical values.
2001 Nov 07
Fig.3
4
(5)
(6)
(7)
(8)
IB = 2.76 mA
IB = 2.30 mA
IB = 1.84 mA
IB = 1.38 mA
(9) IB = 0.92 mA
(10) IB = 0.46 mA
Collector current as a function of
collector-emitter voltage; typical values.
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistors
MLD673
1200
VBE
PEMZ7
MHC017
1200
handbook, halfpage
handbook, halfpage
VBEsat
(mV)
(mV)
1000
1000
(1)
(1)
800
800
(2)
(2)
600
600
(3)
(3)
400
400
200
10−1
1
10
102
IC (mA)
200
10−1
103
1
10
103
IC (mA)
TR1 (NPN); VCE = 2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
TR1 (NPN); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4
Fig.5
Base-emitter voltage as a function of
collector current; typical values.
MHC018
103
handbook, halfpage
102
Base-emitter saturation voltage as a
function of collector current; typical values.
MHC019
600
handbook, halfpage
hFE
VCEsat
(mV)
500
102
(1)
400
300
(2)
(1)
10
200
(2)
(3)
(3)
100
1
10−1
1
10
102
0
−10−1
103
IC (mA)
−1
TR1 (NPN); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
TR2 (PNP); VCE = −2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.6
Fig.7
Collector-emitter saturation voltage as a
function of collector current; typical values.
2001 Nov 07
5
−10
−102
−103
IC (mA)
DC current gain as a function of collector
current; typical values.
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistors
MLD650
−1200
PEMZ7
MLD667
−1200
VBE
handbook, halfpage
handbook, halfpage
(3)
(4)
IC
(mA)
(2)
(1)
(mV)
−1000
(5)
−800
(1)
(6)
−800
(7)
(2)
(8)
−600
−400
(9)
(3)
−400
(10)
0
−4
−2
0
−6
−8
TR2 (PNP); Tamb = 25 °C.
(1)
(2)
(3)
(4)
(5) IB = 4.2 mA
(6) IB = 3.5 mA
(7) IB = 2.8 mA
(8) IB = 2.1 mA
IB = 7.0 mA
IB = 6.3 mA
IB = 5.6 mA
IB = 4.9 mA
Fig.8
−200
−10−1
−10
VCE (V)
−10
−102
−103
IC (mA)
TR2 (PNP); VCE = −2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
(9) IB = 1.4 mA
(10) IB = 0.7 mA
Collector current as a function of
collector-emitter voltage; typical values.
Fig.9
MHC022
−1200
−1
Base-emitter voltage as a function of
collector current; typical values.
MHC023
−103
handbook, halfpage
handbook, halfpage
VBEsat
(mV)
VCEsat
(mV)
−1000
−102
(1)
−800
(1)
(2)
(3)
(2)
−600
−10
(3)
−400
−200
−10−1
−1
−10
−102
IC (mA)
−1
−10−1
−103
−1
−10
−102
−103
IC (mA)
TR2 (PNP); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
TR2 (PNP); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.10 Base-emitter saturation voltage as a
function of collector current; typical values.
Fig.11 Collector-emitter saturation voltage as a
function of collector current; typical values.
2001 Nov 07
6
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistors
PEMZ7
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT666
D
E
A
X
Y S
S
HE
6
5
4
pin 1 index
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
01-01-04
01-08-27
SOT666
2001 Nov 07
EUROPEAN
PROJECTION
7
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistors
PEMZ7
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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products are sold subject to the general terms and
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2001 Nov 07
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
613514/02/pp9
Date of release: 2001 Nov 07
Document order number: 9397 750 09054
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