Data Sheet

PMBT3946YPN
40 V, 200 mA NPN/PNP general-purpose double transistor
Rev. 01 — 12 May 2009
Product data sheet
1. Product profile
1.1 General description
NPN/PNP general-purpose double transistor in a SOT363 (SC-88) very small
Surface-Mounted Device (SMD) plastic package.
Table 1.
Product overview
Type number
Package
NXP
PMBT3946YPN SOT363
JEITA
NPN/NPN
complement
PNP/PNP
complement
Package
configuration
SC-88
PMBT3904YS
PMBT3906YS
very small
Min
Max
1.2 Features
n General-purpose double transistor
n Board-space reduction
1.3 Applications
n General-purpose switching and amplification
1.4 Quick reference data
Table 2.
Quick reference data
Symbol
Parameter
Conditions
Typ
Unit
Per transistor; for the PNP transistor with negative polarity
VCEO
collector-emitter voltage
IC
collector current
hFE
DC current gain
open base
VCE = 1 V;
IC = 10 mA
-
-
40
V
-
-
200
mA
100
180
300
PMBT3946YPN
NXP Semiconductors
40 V, 200 mA NPN/PNP general-purpose double transistor
2. Pinning information
Table 3.
Pinning
Pin
Description
1
emitter TR1
2
base TR1
3
collector TR2
4
emitter TR2
5
base TR2
6
collector TR1
Simplified outline
6
5
4
Graphic symbol
6
5
4
TR2
TR1
1
2
3
1
2
3
sym019
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
PMBT3946YPN SC-88
Description
Version
plastic surface-mounted package; 6 leads
SOT363
4. Marking
Table 5.
Marking codes
Type number
Marking code[1]
PMBT3946YPN
BB*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PMBT3946YPN_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 12 May 2009
2 of 15
PMBT3946YPN
NXP Semiconductors
40 V, 200 mA NPN/PNP general-purpose double transistor
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
collector-base voltage
open emitter
-
60
V
collector-base voltage
open emitter
-
−40
V
TR1 (NPN)
VCBO
TR2 (PNP)
VCBO
Per transistor; for the PNP transistor with negative polarity
VCEO
collector-emitter voltage
open base
-
40
V
VEBO
emitter-base voltage
open collector
-
6
V
IC
collector current
-
200
mA
ICM
peak collector current
single pulse;
tp ≤ 1 ms
-
200
mA
IBM
peak base current
single pulse;
tp ≤ 1 ms
-
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
230
mW
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
350
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−55
+150
°C
Tstg
storage temperature
−65
+150
°C
Per device
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
006aab113
400
Ptot
(mW)
300
200
100
0
−75
−25
25
75
125
175
Tamb (°C)
FR4 PCB, standard footprint
Fig 1.
Per device: Power derating curve
PMBT3946YPN_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 12 May 2009
3 of 15
PMBT3946YPN
NXP Semiconductors
40 V, 200 mA NPN/PNP general-purpose double transistor
6. Thermal characteristics
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance from
junction to ambient
in free air
Rth(j-sp)
thermal resistance from
junction to solder point
Min
Typ
Max
Unit
-
-
543
K/W
-
-
290
K/W
-
-
357
K/W
Per transistor
[1]
Per device
thermal resistance from
junction to ambient
Rth(j-a)
[1]
in free air
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
006aab114
103
δ=1
Zth(j-a)
(K/W)
0.75
0.5
0.33
102
0.2
0.1
0.05
0.02
0.01
10
0
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PMBT3946YPN_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 12 May 2009
4 of 15
PMBT3946YPN
NXP Semiconductors
40 V, 200 mA NPN/PNP general-purpose double transistor
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = 30 V; IE = 0 A
-
-
50
nA
IEBO
emitter-base cut-off
current
VEB = 6 V; IC = 0 A
-
-
50
nA
hFE
DC current gain
VCE = 1 V
IC = 0.1 mA
60
180
-
IC = 1 mA
80
180
-
IC = 10 mA
100
180
300
IC = 50 mA
60
105
-
IC = 100 mA
30
50
-
IC = 10 mA; IB = 1 mA
-
75
200
mV
IC = 50 mA; IB = 5 mA
-
120
300
mV
TR1 (NPN)
VCEsat
collector-emitter
saturation voltage
base-emitter saturation IC = 10 mA; IB = 1 mA
voltage
IC = 50 mA; IB = 5 mA
650
750
850
mV
-
850
950
mV
fT
transition frequency
VCE = 20 V; IC = 10 mA;
f = 100 MHz
300
-
-
MHz
Cc
collector capacitance
VCB = 5 V; IE = ie = 0 A;
f = 1 MHz
-
-
4
pF
Ce
emitter capacitance
VBE = 0.5 V; IC = ic = 0 A;
f = 1 MHz
-
-
8
pF
NF
noise figure
VCE = 5 V; IC = 100 µA;
RS = 1 kΩ;
f = 10 Hz to 15.7 kHz
-
-
5
dB
td
delay time
-
-
35
ns
tr
rise time
VCC = 3 V; IC = 10 mA;
IBon = 1 mA; IBoff = −1 mA
-
-
35
ns
ton
turn-on time
-
-
70
ns
ts
storage time
-
-
200
ns
tf
fall time
-
-
50
ns
toff
turn-off time
-
-
250
ns
VBEsat
PMBT3946YPN_1
Product data sheet
-
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 12 May 2009
5 of 15
PMBT3946YPN
NXP Semiconductors
40 V, 200 mA NPN/PNP general-purpose double transistor
Table 8.
Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = −30 V; IE = 0 A
-
-
−50
nA
IEBO
emitter-base cut-off
current
VEB = −6 V; IC = 0 A
-
-
−50
nA
hFE
DC current gain
VCE = −1 V
TR2 (PNP)
IC = −0.1 mA
60
180
-
IC = −1 mA
80
180
-
IC = −10 mA
100
180
300
IC = −50 mA
60
130
-
IC = −100 mA
30
50
-
IC = −10 mA; IB = −1 mA
-
−100
−250
mV
IC = −50 mA; IB = −5 mA
-
−165
−400
mV
VBEsat
base-emitter saturation IC = −10 mA; IB = −1 mA
voltage
IC = −50 mA; IB = −5 mA
-
−750
−850
mV
-
−850
−950
mV
fT
transition frequency
VCE = −20 V; IC = −10 mA;
f = 100 MHz
250
-
-
MHz
Cc
collector capacitance
VCB = −5 V; IE = ie = 0 A;
f = 1 MHz
-
-
4.5
pF
Ce
emitter capacitance
VCB = −0.5 V; IC = ic = 0 A;
f = 1 MHz
-
-
10
pF
NF
noise figure
VCE = −5 V; IC = −100 µA;
RS = 1 kΩ;
f = 10 Hz to 15.7 kHz
-
-
4
dB
td
delay time
-
-
35
ns
tr
rise time
VCC = −3 V; IC = −10 mA;
IBon = −1 mA; IBoff = 1 mA
-
-
35
ns
ton
turn-on time
-
-
70
ns
ts
storage time
-
-
225
ns
tf
fall time
-
-
75
ns
toff
turn-off time
-
-
300
ns
VCEsat
collector-emitter
saturation voltage
PMBT3946YPN_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 12 May 2009
6 of 15
PMBT3946YPN
NXP Semiconductors
40 V, 200 mA NPN/PNP general-purpose double transistor
006aab115
600
006aab116
0.20
IB (mA) = 5.0
4.5
4.0
3.5
3.0
2.5
IC
(A)
hFE
0.15
400
2.0
(1)
1.5
1.0
0.10
0.5
(2)
200
0.05
(3)
0
10−1
1
10
102
0.0
103
0
2
4
6
8
IC (mA)
10
VCE (V)
Tamb = 25 °C
VCE = 1 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3.
TR1 (NPN): DC current gain as a function of
collector current; typical values
Fig 4.
006aab117
1.2
TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values
006aab118
1.3
VBE
(V)
VBEsat
(V)
(1)
0.8
(1)
0.9
(2)
(2)
(3)
0.4
(3)
0.5
0
10−1
1
10
102
0.1
10−1
103
1
VCE = 1 V
IC/IB = 10
(1) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(3) Tamb = 150 °C
Fig 5.
TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values
Fig 6.
102
103
TR1 (NPN): Base-emitter saturation voltage as
a function of collector current; typical values
PMBT3946YPN_1
Product data sheet
10
IC (mA)
IC (mA)
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 12 May 2009
7 of 15
PMBT3946YPN
NXP Semiconductors
40 V, 200 mA NPN/PNP general-purpose double transistor
006aab119
1
VCEsat
(V)
10−1
(1)
(2)
(3)
10−2
10−1
1
10
102
103
IC (mA)
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 7.
TR1 (NPN): Collector-emitter saturation voltage as a function of collector current;
typical values
PMBT3946YPN_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 12 May 2009
8 of 15
PMBT3946YPN
NXP Semiconductors
40 V, 200 mA NPN/PNP general-purpose double transistor
006aab120
400
hFE
006aab121
−0.3
(1)
IB (mA) = −5.0
−4.5
−4.0
−3.5
−3.0
IC
(A)
300
−2.5
−2.0
−0.2
−1.5
200
−1.0
(2)
−0.1
−0.5
(3)
100
0
−10−1
−1
−10
−102
0
−103
0
−2
−4
−6
IC (mA)
VCE = −1 V
−8
−10
VCE (V)
Tamb = 25 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 8.
TR2 (PNP): DC current gain as a function of
collector current; typical values
006aab123
−1.2
Fig 9.
TR2 (PNP): Collector current as a function of
collector-emitter voltage; typical values
006aab124
−1.2
VBE
(V)
VBEsat
(V)
−1.0
−1.0
(1)
(1)
−0.8
(2)
−0.6
−0.8
(2)
−0.6
(3)
(3)
−0.4
−0.4
−0.2
−10−1
−1
−10
−102
−103
−0.2
−10−1
−1
IC (mA)
−102
−103
IC (mA)
VCE = −1 V
IC/IB = 10
(1) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(3) Tamb = 150 °C
Fig 10. TR2 (PNP): Base-emitter voltage as a function
of collector current; typical values
Fig 11. TR2 (PNP): Base-emitter saturation voltage as
a function of collector current; typical values
PMBT3946YPN_1
Product data sheet
−10
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 12 May 2009
9 of 15
PMBT3946YPN
NXP Semiconductors
40 V, 200 mA NPN/PNP general-purpose double transistor
006aab122
−1
VCEsat
(V)
(1)
−10−1
(2)
(3)
−10−2
−10−1
−1
−10
−102
−103
IC (mA)
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 12. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current;
typical values
8. Test information
VBB
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
oscilloscope
R2
VI
DUT
R1
mlb826
Fig 13. TR1 (NPN): Test circuit for switching times
PMBT3946YPN_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 12 May 2009
10 of 15
PMBT3946YPN
NXP Semiconductors
40 V, 200 mA NPN/PNP general-purpose double transistor
VBB
RB
oscilloscope
VCC
RC
Vo
(probe)
(probe)
450 Ω
450 Ω
oscilloscope
R2
VI
DUT
R1
mgd624
Fig 14. TR2 (PNP): Test circuit for switching times
9. Package outline
2.2
1.8
6
2.2 1.35
2.0 1.15
1.1
0.8
5
4
2
3
0.45
0.15
pin 1
index
1
0.3
0.2
0.65
0.25
0.10
1.3
Dimensions in mm
06-03-16
Fig 15. Package outline SOT363 (SC-88)
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
PMBT3946YPN
Package
SOT363
Description
3000
10000
4 mm pitch, 8 mm tape and reel; T1
[2]
-115
-135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125
-165
[1]
For further information and the availability of packing methods, see Section 14.
[2]
T1: normal taping
[3]
T2: reverse taping
PMBT3946YPN_1
Product data sheet
Packing quantity
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 12 May 2009
11 of 15
PMBT3946YPN
NXP Semiconductors
40 V, 200 mA NPN/PNP general-purpose double transistor
11. Soldering
2.65
solder lands
2.35 1.5
0.4 (2×)
0.6 0.5
(4×) (4×)
solder resist
solder paste
0.5
(4×)
0.6
(2×)
occupied area
0.6
(4×)
Dimensions in mm
1.8
sot363_fr
Fig 16. Reflow soldering footprint SOT363 (SC-88)
1.5
solder lands
0.3 2.5
4.5
solder resist
occupied area
1.5
Dimensions in mm
1.3
1.3
preferred transport
direction during soldering
2.45
5.3
sot363_fw
Fig 17. Wave soldering footprint SOT363 (SC-88)
PMBT3946YPN_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 12 May 2009
12 of 15
PMBT3946YPN
NXP Semiconductors
40 V, 200 mA NPN/PNP general-purpose double transistor
12. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMBT3946YPN_1
20090512
Product data sheet
-
-
PMBT3946YPN_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 12 May 2009
13 of 15
PMBT3946YPN
NXP Semiconductors
40 V, 200 mA NPN/PNP general-purpose double transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PMBT3946YPN_1
Product data sheet
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Rev. 01 — 12 May 2009
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PMBT3946YPN
NXP Semiconductors
40 V, 200 mA NPN/PNP general-purpose double transistor
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information . . . . . . . . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Packing information. . . . . . . . . . . . . . . . . . . . . 11
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 12 May 2009
Document identifier: PMBT3946YPN_1
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