NEW PRODUCT ANNOUNCEMENT www.taiwansemi.com TSM038N03 30V (VDS) N-Channel MOSFET PDFN33 The TSM038N03PQ33 N-channel power MOSFET is a new product in Taiwan Semiconductor’s low- to mid-voltage high performance trench power MOSFET portfolio. The advanced trench technology is specifically designed with significantly lower total gate charge requirements to reduce switching losses and improve the efficiency of DC-DC converters. The PDFN33 package provides an ultra small, thermally efficient 3mm x 3mm footprint, lower RDS(on) as a function of die size, and lower cost which makes it extremely versatile for advanced and efficient surface mount applications. Parameter VDS VGS = -10V RDS(on) (max) VGS = -4.5V Id Qg Value 30 3.8 5.5 80 24 Unit V mΩ A nC Features: Applications: Mobile device DC-DC conversion Point of load (POL) DC-DC Secondary switch rectification 100% avalanche tested Low gate charge for fast switching Pb-free plating ROHS compliant Halogen-free mold compound ISSUE NO.14 APR 2015 NEW PRODUCT ANNOUNCEMENT www.taiwansemi.com Cross Reference: TSC Infineon Fairchild Alpha & Omega TSM038N03PQ33 BSZ050N03MS FDMC2514SDC AON7210 Ordering & Package Information: Ordering P/N Reel (pcs) TSM038N03PQ33 RGG 5,000 Reel Size (inch) Inner Box (pcs) 13 10,000 Carton Carton Size (pcs) (mm) Gross Weight (kg/ carton) 50,000 183x183x710 9 Samples of TSM038N03 can be ordered on Product Detail page: http://www.taiwansemi.com/en/products/details/TSM038N03 For pricing and more information, please contact TSC sales or authorized distributors worldwide: www.taiwansemi.com/en/contact ISSUE NO.14 APR 2015