mgd623s ds en

600 V, 37 A, IGBT with Fast Recovery Diode
MGD623S
Features
Package
 Low Saturation Voltage
 High Speed Switching
 With Integrated Low VF Fast Recovery Diode
 RoHS Compliant
TO3P-3L
(4)
C
 VCE ------------------------------------------------------ 600 V
 IC-------------------------------------------37 A (TC = 100 °C)
 VCE(sat)----------------------------------------------- 1.8 V typ.
 tf --------------------------------------------------- 120 ns typ.
 VF---------------------------------------------------- 1.2 V typ.
(1) (2) (3)
G C E
Applications
 Microwave oven
 IH cooker
 Inverter circuit
Not to scale
Equivalent circuit
C (2)(4)
G (1)
E (3)
Absolute Maximum Ratings
 Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Test conditions
Rating
Unit
Collector to Emitter Voltage
VCE
600
V
Gate to Emitter Voltage
VGE
± 30
V
TC = 25 °C
50
A
TC= 100 °C
37
A
PW ≤ 1ms
Duty cycle ≤ 1 %
100
A
TC = 25 °C
30
A
60
A
5
V/ns
150
W
Continuous Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Pulsed Forward Current
Maximum Collector to Emitter
dv/dt
Power Dissipation
IC
IC(PULSE)
IF
IF(PULSE)
dv/dt
PD
PW ≤ 1ms
Duty cycle ≤ 1 %
TC ≤ 125 °C
Refer to Figure 1
TC = 25 °C
Operating Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
− 55 to 150
°C
MGD623S-DS Rev.1.0
Jan.23, 2015
SANKEN ELECTRIC CO.,LTD.
1
MGD623S
Thermal Characteristics
 Unless otherwise specified, TA = 25 °C
Parameter
Thermal Resistance of IGBT
(Junction to Case)
Thermal Resistance of Diode
(Junction to Case)
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
RθJC(IGBT)
−
−
0.833
°C/W
RθJC(Di)
−
−
1.67
°C/W
Min.
Typ.
Max.
Unit
Electrical Characteristics
 Unless otherwise specified, TA = 25 °C
Parameter
Collector to Emitter Breakdown
Voltage
Collector to Emitter Leakage
Current
Gate to Emitter Leakage Current
Gate Threshold Voltage
Collector to Emitter Saturation
Voltage
Input Capacitance
Symbol
V(BR)CES
IC = 100 μA, VGE = 0 V
600
−
−
V
ICES
VCE = 600 V, VGE = 0 V
−
−
100
µA
IGES
VGE = ± 30 V
−
−
± 500
nA
VGE(TH)
VCE = 10 V, IC = 1 mA
3
−
6
V
VCE(sat)
VGE = 15 V, IC = 50 A
−
1.8
2.4
V
−
2500
−
−
150
−
−
80
−
−
65
−
−
20
−
−
20
−
−
75
−
−
100
−
−
300
−
tf
−
120
−
td(on)
−
75
−
−
100
−
−
300
−
−
200
−
1.2
1.6
V
300
−
ns
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Total Gate Charge
QG
Gate to Emitter Charge
QGE
Gate to Collector Charge
QGC
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Emitter to Collector Diode Forward
Voltage
Emitter to Collector Diode Reverse
Recovery Time
MGD623S-DS Rev.1.0
Jan.23, 2015
Test Conditions
tr
td(off)
tr
td(off)
VCE = 20 V
VGE = 0 V
f = 1.0 MHz
VCE = 300 V
IC = 50 A
VGE = 15 V
TC = 25 °C
Refer to Figure 1
TC = 125 °C
Refer to Figure 1
tf
VF
IF = 30 A
trr
IF = 30 A
di/dt = 100 A/μs
SANKEN ELECTRIC CO.,LTD.
−
pF
nC
ns
ns
2
MGD623S
Test Circuits and Waveforms
DUT
(Diode)
L
VCE
Test conditions
VCE = 300 V
IC = 50 A
VGE = 15 V
RG = 39 Ω
L= 100 μH
RG
IC
15V
VGE
DUT
(IGBT)
(a) Test Circuit
VGE
90%
10%
t
VCE
dv/dt
t
IC
90%
90%
10%
10%
td(on)
tr
td(off)
t
tf
(b) Waveform
Figure 1 Test Circuits and waveforms of dv/dt and Switching Time
MGD623S-DS Rev.1.0
Jan.23, 2015
SANKEN ELECTRIC CO.,LTD.
3
MGD623S
Characteristic Curves
1000
Collector Current, IC (A)
Collector Current, IC (A)
1000
100
10
IGBT
VGE = 15 V
Rg = 39 Ω
Single Pulse
TC = 125 °C
1
0.1
100
10 μs
10
100 μs
IGBT
VGE = 15 V
Single Pulse
TC = 25 °C
1
0.1
1
10
100
1000
1
10
100
1000
Collector-Emitter Voltage, VCE (V)
Collector-Emitter Voltage, VCE (V)
Figure 1. Reverse Bias Safe Operating Area
Figure 2. Safe Operating Area
70
60
Collector Current, IC (A)
Power Dissipation, PD (W)
200
150
100
50
VGE = 15 V
Tj < 150 °C
40
30
20
VGE = 15 V
Tj < 150 °C
10
0
0
25
50
75
100
125
Case Temperature, TC (°C)
150
Figure 3. Power Dissipation vs. Case Temperature
100
50
75
100
125
Case Temperature, TC (°C)
TC = 125 °C
VGE = 15 V
VGE = 10 V
60
VGE = 8 V
40
20
VGE = 15 V
VGE = 20 V
80
VGE = 20 V
150
Figure 4. Collector Current vs. Case Temperature
100
TC = 25 °C
80
25
Collector Current, IC (A)
Collector Current, IC (A)
50
VGE = 10 V
60
VGE = 8 V
40
20
VGE = 7 V
VGE = 7 V
0
0
0
1
2
3
4
5
0
Collector-Emitter Voltage, VCE (V)
Figure 5. Output Characteristics (TC = 25 °C)
MGD623S-DS Rev.1.0
Jan.23, 2015
1
2
3
4
5
Collector-Emitter Voltage, VCE (V)
Figure 6. Output Characteristics (TC = 125 °C)
SANKEN ELECTRIC CO.,LTD.
4
MGD623S
4
Collector-Emitter Saturation, VCE(sat) (V)
100
80
60
40
TC = − 55 °C
20
TC = 25 °C
TC = 125 °C
0
VGE = 15 V
IC = 100 A
3
IC = 50 A
2
IC = 30 A
1
0
0
5
10
15
-50
0
50
100
Junction Temperature, Tj (°C)
Gate-Emitter Voltage, VGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Voltage vs. Junction
Temperature
5
TC = 25 °C
Collector-Emitter Voltage, VCE (V)
Collector-Emitter Voltage, VCE (V)
5
4
3
IC = 100 A
2
IC = 50 A
IC = 30 A
1
0
TC = 125 °C
4
3
IC = 100 A
2
IC = 50 A
IC = 30 A
1
0
1
10
100
1
10
Gate-Emitter Voltage, VGE (V)
100
Gate-Emitter Voltage, VGE (V)
Figure 9. Collector-Emitter Voltage
vs. Gate-Emitter Voltage
Figure 10. Collector-Emitter Voltage
vs. Gate-Emitter Voltage
10000
40
400
Collector-Emitter Voltage, VCE (V)
Cies
1000
Capacitance (pF)
150
Coes
100
Cres
10
f = 1 MHz
VGE = 0 V
1
VCE
TC = 25 °C
IC = 50 A
300
30
200
20
VGE
10
100
0
0
0
10
20
30
40
50
0
Collector-Emitter Voltage, VCE (V)
Figure 11. Capacitance Characteristics
MGD623S-DS Rev.1.0
Jan.23, 2015
Gate-Emitter Voltage, VGE (V)
Collector Current. IC (A)
VCE = 5 V
20
40
60
Gate charge, QG (nC)
80
Figure 12. Gate Charge Characteristics
SANKEN ELECTRIC CO.,LTD.
5
MGD623S
1000
1000
Switching Time (ns)
Switching Time (ns)
td(off)
tf
100
tr
td(on)
tf
td(off)
100
tr
Inductive Load
IC = 50 A, VCE = 300 V,
VGE = 15 V, TC = 25 °C
td(on)
10
Inductive Load
IC = 50 A, VCE = 300 V,
VGE = 15 V, TC = 125 °C
10
1
10
100
1
10
100
Gate Resistor, RG (Ω)
Gate Resistor, RG (Ω)
Figure 13. Switching Time vs. Gate Resistor
Figure 14. Switching Time vs. Gate Resistor
1000
1000
Switching Time (ns)
Switching Time (ns)
td(off)
td(off)
100
tf
td(on)
tr
Inductive Load
VCE = 300V, VGE = 15 V
RG = 39 Ω, TC = 25 °C
10
Collector Current, IC (A)
td(on)
tr
Inductive Load
VCE = 300V, VGE = 15 V
RG = 39 Ω, TC = 125 °C
10
10
1
tf
100
100
Figure 15. Switching Time vs. Collector Current
1
10
Collector Current, IC (A)
100
Figure 16. Switching Time vs. Collector Current
Forward Current, IF (A)
100
80
60
TC = 125 °C
40
20
TC = 25 °C
0
0
1
2
Forward Voltage, VF (V)
3
Figure 17. Diode Forward Characteristics
MGD623S-DS Rev.1.0
Jan.23, 2015
SANKEN ELECTRIC CO.,LTD.
6
MGD623S
10
Thermal Resistance (°C/W)
Diode
1
IGBT
0.1
0.01
°C
TC = 25 °C
Single
Single Pulse
Pulse
VCE
<5V
V
CE < 5 V
0.001
1μ
10μ
100μ
1m
10m
100m
1
10
100
Pulse Width (s)
Figure 18. Transient Thermal Resistance
MGD623S-DS Rev.1.0
Jan.23, 2015
SANKEN ELECTRIC CO.,LTD.
7
MGD623S
Package Outline
TO3P-3L
NOTES:
1) Dimension is in millimeters.
2) Pin treatment Pb-free. Device composition compliant with the RoHS directive.
Marking Diagram
MGD623S
Part Number
YM
DD
Lot Number
Y is the last digit of the year (0 to 9)
M is the month (1 to 9, O, N or D)
DD is the date (two digit of 01 to 31)
(1)
MGD623S-DS Rev.1.0
Jan.23, 2015
(2)
(3)
SANKEN ELECTRIC CO.,LTD.
8
MGD623S
OPERATING PRECAUTIONS
In the case that you use Sanken products or design your products by using Sanken products, the reliability largely
depends on the degree of derating to be made to the rated values. Derating may be interpreted as a case that an operation
range is set by derating the load from each rated value or surge voltage or noise is considered for derating in order to
assure or improve the reliability. In general, derating factors include electric stresses such as electric voltage, electric
current, electric power etc., environmental stresses such as ambient temperature, humidity etc. and thermal stress caused
due to self-heating of semiconductor products. For these stresses, instantaneous values, maximum values and minimum
values must be taken into consideration. In addition, it should be noted that since power devices or IC’s including power
devices have large self-heating value, the degree of derating of junction temperature affects the reliability significantly.
Because reliability can be affected adversely by improper storage environments and handling methods, please
observe the following cautions.
Cautions for Storage
 Ensure that storage conditions comply with the standard temperature (5 to 35°C) and the standard relative humidity
(around 40 to 75%); avoid storage locations that experience extreme changes in temperature or humidity.
 Avoid locations where dust or harmful gases are present and avoid direct sunlight.
 Reinspect for rust on leads and solderability of the products that have been stored for a long time.
Cautions for Testing and Handling
When tests are carried out during inspection testing and other standard test periods, protect the products from power
surges from the testing device, shorts between the product pins, and wrong connections. Ensure all test parameters are
within the ratings specified by Sanken for the products.
Remarks About Using Thermal Silicone Grease
 When thermal silicone grease is used, it shall be applied evenly and thinly. If more silicone grease than required is
applied, it may produce excess stress.
 The thermal silicone grease that has been stored for a long period of time may cause cracks of the greases, and it
cause low radiation performance. In addition, the old grease may cause cracks in the resin mold when screwing the
products to a heatsink.
 Fully consider preventing foreign materials from entering into the thermal silicone grease. When foreign material
is immixed, radiation performance may be degraded or an insulation failure may occur due to a damaged insulating
plate.
 The thermal silicone greases that are recommended for the resin molded semiconductor should be used.
Our recommended thermal silicone grease is the following, and equivalent of these.
Type
Suppliers
G746
Shin-Etsu Chemical Co., Ltd.
YG6260 Momentive Performance Materials Japan LLC
SC102
Dow Corning Toray Co., Ltd.
Cautions for Mounting to a Heatsink
 When the flatness around the screw hole is insufficient, such as when mounting the products to a heatsink that has
an extruded (burred) screw hole, the products can be damaged, even with a lower than recommended screw torque.
For mounting the products, the mounting surface flatness should be 0.05mm or less.
 Please select suitable screws for the product shape. Do not use a flat-head machine screw because of the stress to
the products. Self-tapping screws are not recommended. When using self-tapping screws, the screw may enter the
hole diagonally, not vertically, depending on the conditions of hole before threading or the work situation. That
may stress the products and may cause failures.
 Recommended screw torque:
Package
Recommended Screw Torque
TO-220, TO-220F
0.490 to 0.686 N・m (5 to 7 kgf・cm)
TO-3P, TO-3PF, TO-247
0.686 to 0.882 N・m (7 to 9 kgf・cm)
SLA
0.588 to 0.784 N・m (6 to 8 kgf・cm)
MGD623S-DS Rev.1.0
Jan.23, 2015
SANKEN ELECTRIC CO.,LTD.
9
MGD623S
 For tightening screws, if a tightening tool (such as a driver) hits the products, the package may crack, and internal
stress fractures may occur, which shorten the lifetime of the electrical elements and can cause catastrophic failure.
Tightening with an air driver makes a substantial impact. In addition, a screw torque higher than the set torque can
be applied and the package may be damaged. Therefore, an electric driver is recommended.
When the package is tightened at two or more places, first pre-tighten with a lower torque at all places, then tighten
with the specified torque. When using a power driver, torque control is mandatory.
 Please pay special attention about the slack of the press mold. In case that the hole diameter of the heatsink is less
than 4 mm, it may cause the resin crack at tightening.
Soldering
 When soldering the products, please be sure to minimize the working time, within the following limits:
• 260 ± 5 °C
10 ± 1 s (Flow, 2 times)
• 380 ± 10 °C 3.5 ± 0.5 s (Soldering iron, 1 time)
 Soldering should be at a distance of at least 1.5 mm from the body of the products.
Electrostatic Discharge
 When handling the products, the operator must be grounded. Grounded wrist straps worn should have at least 1MΩ
of resistance from the operator to ground to prevent shock hazard, and it should be placed near the operator.
 Workbenches where the products are handled should be grounded and be provided with conductive table and floor
mats.
 When using measuring equipment such as a curve tracer, the equipment should be grounded.
 When soldering the products, the head of soldering irons or the solder bath must be grounded in order to prevent
leak voltages generated by them from being applied to the products.
 The products should always be stored and transported in Sanken shipping containers or conductive containers, or
be wrapped in aluminum foil.
MGD623S-DS Rev.1.0
Jan.23, 2015
SANKEN ELECTRIC CO.,LTD.
10
MGD623S
IMPORTANT NOTES
 The contents in this document are subject to changes, for improvement and other purposes, without notice. Make
sure that this is the latest revision of the document before use.
 Application examples, operation examples and recommended examples described in this document are quoted for
the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any
infringement of industrial property rights, intellectual property rights, life, body, property or any other rights of
Sanken or any third party which may result from its use.
 Unless otherwise agreed in writing by Sanken, Sanken makes no warranties of any kind, whether express or
implied, as to the products, including product merchantability, and fitness for a particular purpose and special
environment, and the information, including its accuracy, usefulness, and reliability, included in this document.
 Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and
defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at
their own risk, preventative measures including safety design of the equipment or systems against any possible
injury, death, fires or damages to the society due to device failure or malfunction.
 Sanken products listed in this document are designed and intended for the use as components in general purpose
electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring
equipment, etc.).
When considering the use of Sanken products in the applications where higher reliability is required (transportation
equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various
safety devices, etc.), and whenever long life expectancy is required even in general purpose electronic equipment
or apparatus, please contact your nearest Sanken sales representative to discuss, prior to the use of the products
herein.
The use of Sanken products without the written consent of Sanken in the applications where extremely high
reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly
prohibited.
 When using the products specified herein by either (i) combining other products or materials therewith or (ii)
physically, chemically or otherwise processing or treating the products, please duly consider all possible risks that
may result from all such uses in advance and proceed therewith at your own responsibility.
 Anti radioactive ray design is not considered for the products listed herein.
 Sanken assumes no responsibility for any troubles, such as dropping products caused during transportation out of
Sanken’s distribution network.
 The contents in this document must not be transcribed or copied without Sanken’s written consent.
MGD623S-DS Rev.1.0
Jan.23, 2015
SANKEN ELECTRIC CO.,LTD.
11