BCM61B NPN/NPN matched double transistor Rev. 02 — 28 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN matched double transistor in a SOT143B small Surface-Mounted Device (SMD) plastic package. Matched version of BCV61. PNP/PNP equivalent: BCM62B 1.2 Features n Current gain matching 1.3 Applications n Current mirror n Differential amplifier 1.4 Quick reference data Table 1. Symbol Quick reference data Parameter Conditions Min Typ Max Unit V Per transistor TR1 VCEO collector-emitter voltage open base - - 45 hFE DC current gain VCE = 5 V; IC = 2 mA 200 290 450 - - 100 0.92 1.02 1.12 Per transistor collector current IC mA Per device IC1/IE2 [1] current matching VCE1 = 5 V; IE2 = −0.5 mA; Tamb ≤ 25 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. BCM61B NXP Semiconductors NPN/NPN matched double transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline 1 collector TR2, base TR1 and TR2 2 collector TR1 3 emitter TR1 4 emitter TR2 4 Symbol 3 4 TR2 1 3 TR1 2 1 2 006aaa842 3. Ordering information Table 3. Ordering information Type number BCM61B Package Name Description Version - plastic surface-mounted package; 4 leads SOT143B 4. Marking Table 4. Marking codes Type number Marking code[1] BCM61B *AC [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China BCM61B_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 28 August 2009 2 of 13 BCM61B NXP Semiconductors NPN/NPN matched double transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor TR1 VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 45 V VCB = 0 V - 6 V - 100 mA - 200 mA Per transistor VEBS emitter-base voltage IC collector current ICM peak collector current single pulse; tp ≤ 1 ms Ptot total power dissipation Tamb ≤ 25 °C [1] - 220 mW Ptot total power dissipation Tamb ≤ 25 °C [1] - 390 mW Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Per device [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 568 K/W thermal resistance from junction to ambient in free air [1] - - 321 K/W Per device Rth(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. BCM61B_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 28 August 2009 3 of 13 BCM61B NXP Semiconductors NPN/NPN matched double transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit VCB = 30 V; IE = 0 A - - 15 nA VCB = 30 V; IE = 0 A; Tj = 150 °C - - 5 µA nA Per transistor TR1 ICBO collector-base cut-off current IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 100 hFE DC current gain VCE = 5 V; IC = 10 µA - 250 - VCE = 5 V; IC = 100 µA 100 - - VCE = 5 V; IC = 2 mA 200 290 450 IC = 10 mA; IB = 0.5 mA - 50 200 mV IC = 100 mA; IB = 5 mA - 200 400 mV [1] - 760 - mV IC = 100 mA; IB = 5 mA [1] - 910 - mV VCE = 5 V; IC = 2 mA [2] 610 660 710 mV VCE = 5 V; IC = 10 mA [2] - - 770 mV VCEsat VBEsat VBE collector-emitter saturation voltage base-emitter saturation IC = 10 mA; voltage IB = 0.5 mA base-emitter voltage Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - - 1.5 pF Ce emitter capacitance VEB = 0.5 V; IC = ic = 0 A; f = 1 MHz - 11 - pF fT transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz 100 250 - MHz NF noise figure VCE = 5 V; IC = 0.2 mA; RS = 2 kΩ; f = 10 Hz to 15.7 kHz - 2.8 - dB VCE = 5 V; IC = 0.2 mA; RS = 2 kΩ; f = 1 kHz; B = 200 Hz - 3.3 - dB BCM61B_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 28 August 2009 4 of 13 BCM61B NXP Semiconductors NPN/NPN matched double transistor Table 7. Characteristics …continued Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit VCB = 0 V; IE = −250 mA - - −1.8 V VCB = 0 V; IE = −10 µA −400 - - mV Per transistor TR2 VEBS emitter-base voltage Per device IC1/IE2 current matching VCE1 = 5 V; IE2 = −0.5 mA; Tamb ≤ 25 °C [3] 0.92 1.02 1.12 VCE1 = 5 V; IE2 = −0.5 mA; Tamb ≤ 150 °C [3] 0.93 - 1.13 VCE1 = 3 V; IE2 = −0.5 mA; Tamb ≤ 25 °C [3] 0.91 1.01 1.11 VCE1 = 1 V; IE2 = −0.5 mA; Tamb ≤ 25 °C [3] 0.9 1 1.1 [1] VBEsat decreases by about 1.7 mV/K with increasing temperature. [2] VBE decreases by about 2 mV/K with increasing temperature. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. BCM61B_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 28 August 2009 5 of 13 BCM61B NXP Semiconductors NPN/NPN matched double transistor 006aaa822 0.20 IB (mA) = 4.5 4.05 3.6 IC (A) 006aaa823 600 hFE 0.16 (1) 400 0.12 (2) 0.08 3.15 2.7 2.25 1.8 1.35 0.9 0.45 0.04 200 0 0 2 4 6 8 (3) 0 10−2 10 VCE (V) Tamb = 25 °C 10−1 1 10 102 103 IC (mA) VCE = 5 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 1. Collector current as a function of collector-emitter voltage; typical values Fig 2. 006aaa824 1.3 DC current gain as a function of collector current; typical values 006aaa825 10 VCEsat (V) VBEsat (V) 0.9 1 (1) (2) (3) (1) (2) (3) 10−1 0.5 0.1 10−1 1 10 102 103 10−2 10−1 1 IC (mA) IC/IB = 20 IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = −55 °C Base-emitter saturation voltage as a function of collector current; typical values Fig 4. 103 Collector-emitter saturation voltage as a function of collector current; typical values BCM61B_2 Product data sheet 102 IC (mA) (1) Tamb = −55 °C Fig 3. 10 © NXP B.V. 2009. All rights reserved. Rev. 02 — 28 August 2009 6 of 13 BCM61B NXP Semiconductors NPN/NPN matched double transistor 006aaa826 1.0 VBE (V) 006aaa827 103 fT (MHz) 0.8 102 0.6 0.4 10−1 1 102 10 10 103 1 IC (mA) VCE = 5 V; Tamb = 25 °C Fig 5. VCE = 5 V; Tamb = 25 °C Base-emitter voltage as a function of collector current; typical values Fig 6. 006aaa828 5 Cc (pF) Transition frequency as a function of collector current; typical values 006aaa829 15 Ce (pF) 4 13 3 11 2 9 1 7 0 5 0 2 4 6 8 10 VCB (V) 0 4 6 f = 1 MHz; Tamb = 25 °C Collector capacitance as a function of collector-base voltage; typical values Fig 8. Emitter capacitance as a function of emitter-base voltage; typical values BCM61B_2 Product data sheet 2 VEB (V) f = 1 MHz; Tamb = 25 °C Fig 7. 102 10 IC (mA) © NXP B.V. 2009. All rights reserved. Rev. 02 — 28 August 2009 7 of 13 BCM61B NXP Semiconductors NPN/NPN matched double transistor 006aaa830 1.5 IC1/IE2 (1) 1.3 (2) 1.1 (3) 0.9 10−1 1 102 10 IE2 (mA) (1) VCE1 = 5 V (2) VCE1 = 3 V (3) VCE1 = 1 V Fig 9. Current matching as a function of emitter current 2; typical values 8. Test information A IC1 VCE1 2 TR1 1 TR2 3 IE2 = constant 4 006aaa831 Fig 10. Test circuit current matching BCM61B_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 28 August 2009 8 of 13 BCM61B NXP Semiconductors NPN/NPN matched double transistor 9. Package outline 3.0 2.8 1.1 0.9 1.9 4 2.5 2.1 3 0.45 0.15 1.4 1.2 1 2 0.88 0.78 0.48 0.38 0.15 0.09 1.7 Dimensions in mm 04-11-16 Fig 11. Package outline SOT143B 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package BCM61B [1] Description SOT143B 4 mm pitch, 8 mm tape and reel 3000 10000 -215 -235 For further information and the availability of packing methods, see Section 14. BCM61B_2 Product data sheet Packing quantity © NXP B.V. 2009. All rights reserved. Rev. 02 — 28 August 2009 9 of 13 BCM61B NXP Semiconductors NPN/NPN matched double transistor 11. Soldering 3.25 0.60 (3x) 0.50 (3x) solder lands 0.60 (4x) solder resist 4 3 2.70 occupied area 1.30 3.00 1 2 solder paste msa441 0.90 1.00 2.50 Dimensions in mm Fig 12. Reflow soldering footprint SOT143B 4.45 1.20 (3×) 4 3 1.15 4.00 4.60 solder lands 1 solder resist 2 occupied area Dimensions in mm 1.00 3.40 preferred transport direction during soldering msa422 Dimensions in mm Fig 13. Wave soldering footprint SOT143B BCM61B_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 28 August 2009 10 of 13 BCM61B NXP Semiconductors NPN/NPN matched double transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BCM61B_2 20090828 Product data sheet - BCM61B_1 Modifications: BCM61B_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 13 “Wave soldering footprint SOT143B”: updated 20060919 Product data sheet BCM61B_2 Product data sheet - - © NXP B.V. 2009. All rights reserved. Rev. 02 — 28 August 2009 11 of 13 BCM61B NXP Semiconductors NPN/NPN matched double transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BCM61B_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 28 August 2009 12 of 13 BCM61B NXP Semiconductors NPN/NPN matched double transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 28 August 2009 Document identifier: BCM61B_2