Data Sheet

BCM61B
NPN/NPN matched double transistor
Rev. 02 — 28 August 2009
Product data sheet
1. Product profile
1.1 General description
NPN/NPN matched double transistor in a SOT143B small Surface-Mounted Device (SMD)
plastic package. Matched version of BCV61.
PNP/PNP equivalent: BCM62B
1.2 Features
n Current gain matching
1.3 Applications
n Current mirror
n Differential amplifier
1.4 Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
V
Per transistor TR1
VCEO
collector-emitter voltage
open base
-
-
45
hFE
DC current gain
VCE = 5 V;
IC = 2 mA
200
290
450
-
-
100
0.92
1.02
1.12
Per transistor
collector current
IC
mA
Per device
IC1/IE2
[1]
current matching
VCE1 = 5 V;
IE2 = −0.5 mA;
Tamb ≤ 25 °C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
BCM61B
NXP Semiconductors
NPN/NPN matched double transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
1
collector TR2, base TR1 and TR2
2
collector TR1
3
emitter TR1
4
emitter TR2
4
Symbol
3
4
TR2
1
3
TR1
2
1
2
006aaa842
3. Ordering information
Table 3.
Ordering information
Type number
BCM61B
Package
Name
Description
Version
-
plastic surface-mounted package; 4 leads
SOT143B
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
BCM61B
*AC
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
BCM61B_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 28 August 2009
2 of 13
BCM61B
NXP Semiconductors
NPN/NPN matched double transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor TR1
VCBO
collector-base voltage
open emitter
-
50
V
VCEO
collector-emitter voltage
open base
-
45
V
VCB = 0 V
-
6
V
-
100
mA
-
200
mA
Per transistor
VEBS
emitter-base voltage
IC
collector current
ICM
peak collector current
single pulse;
tp ≤ 1 ms
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
220
mW
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
390
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
Per device
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1]
-
-
568
K/W
thermal resistance from
junction to ambient
in free air
[1]
-
-
321
K/W
Per device
Rth(j-a)
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
BCM61B_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 28 August 2009
3 of 13
BCM61B
NXP Semiconductors
NPN/NPN matched double transistor
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCB = 30 V;
IE = 0 A
-
-
15
nA
VCB = 30 V;
IE = 0 A;
Tj = 150 °C
-
-
5
µA
nA
Per transistor TR1
ICBO
collector-base cut-off
current
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
100
hFE
DC current gain
VCE = 5 V;
IC = 10 µA
-
250
-
VCE = 5 V;
IC = 100 µA
100
-
-
VCE = 5 V;
IC = 2 mA
200
290
450
IC = 10 mA;
IB = 0.5 mA
-
50
200
mV
IC = 100 mA;
IB = 5 mA
-
200
400
mV
[1]
-
760
-
mV
IC = 100 mA;
IB = 5 mA
[1]
-
910
-
mV
VCE = 5 V;
IC = 2 mA
[2]
610
660
710
mV
VCE = 5 V;
IC = 10 mA
[2]
-
-
770
mV
VCEsat
VBEsat
VBE
collector-emitter
saturation voltage
base-emitter saturation IC = 10 mA;
voltage
IB = 0.5 mA
base-emitter voltage
Cc
collector capacitance
VCB = 10 V;
IE = ie = 0 A;
f = 1 MHz
-
-
1.5
pF
Ce
emitter capacitance
VEB = 0.5 V;
IC = ic = 0 A;
f = 1 MHz
-
11
-
pF
fT
transition frequency
VCE = 5 V;
IC = 10 mA;
f = 100 MHz
100
250
-
MHz
NF
noise figure
VCE = 5 V;
IC = 0.2 mA;
RS = 2 kΩ;
f = 10 Hz to
15.7 kHz
-
2.8
-
dB
VCE = 5 V;
IC = 0.2 mA;
RS = 2 kΩ;
f = 1 kHz;
B = 200 Hz
-
3.3
-
dB
BCM61B_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 28 August 2009
4 of 13
BCM61B
NXP Semiconductors
NPN/NPN matched double transistor
Table 7.
Characteristics …continued
Tamb = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCB = 0 V;
IE = −250 mA
-
-
−1.8
V
VCB = 0 V;
IE = −10 µA
−400
-
-
mV
Per transistor TR2
VEBS
emitter-base voltage
Per device
IC1/IE2
current matching
VCE1 = 5 V;
IE2 = −0.5 mA;
Tamb ≤ 25 °C
[3]
0.92
1.02
1.12
VCE1 = 5 V;
IE2 = −0.5 mA;
Tamb ≤ 150 °C
[3]
0.93
-
1.13
VCE1 = 3 V;
IE2 = −0.5 mA;
Tamb ≤ 25 °C
[3]
0.91
1.01
1.11
VCE1 = 1 V;
IE2 = −0.5 mA;
Tamb ≤ 25 °C
[3]
0.9
1
1.1
[1]
VBEsat decreases by about 1.7 mV/K with increasing temperature.
[2]
VBE decreases by about 2 mV/K with increasing temperature.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
BCM61B_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 28 August 2009
5 of 13
BCM61B
NXP Semiconductors
NPN/NPN matched double transistor
006aaa822
0.20
IB (mA) = 4.5
4.05
3.6
IC
(A)
006aaa823
600
hFE
0.16
(1)
400
0.12
(2)
0.08
3.15
2.7
2.25
1.8
1.35
0.9
0.45
0.04
200
0
0
2
4
6
8
(3)
0
10−2
10
VCE (V)
Tamb = 25 °C
10−1
1
10
102
103
IC (mA)
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 1.
Collector current as a function of
collector-emitter voltage; typical values
Fig 2.
006aaa824
1.3
DC current gain as a function of collector
current; typical values
006aaa825
10
VCEsat
(V)
VBEsat
(V)
0.9
1
(1)
(2)
(3)
(1)
(2)
(3)
10−1
0.5
0.1
10−1
1
10
102
103
10−2
10−1
1
IC (mA)
IC/IB = 20
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = −55 °C
Base-emitter saturation voltage as a function
of collector current; typical values
Fig 4.
103
Collector-emitter saturation voltage as a
function of collector current; typical values
BCM61B_2
Product data sheet
102
IC (mA)
(1) Tamb = −55 °C
Fig 3.
10
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 28 August 2009
6 of 13
BCM61B
NXP Semiconductors
NPN/NPN matched double transistor
006aaa826
1.0
VBE
(V)
006aaa827
103
fT
(MHz)
0.8
102
0.6
0.4
10−1
1
102
10
10
103
1
IC (mA)
VCE = 5 V; Tamb = 25 °C
Fig 5.
VCE = 5 V; Tamb = 25 °C
Base-emitter voltage as a function of collector
current; typical values
Fig 6.
006aaa828
5
Cc
(pF)
Transition frequency as a function of collector
current; typical values
006aaa829
15
Ce
(pF)
4
13
3
11
2
9
1
7
0
5
0
2
4
6
8
10
VCB (V)
0
4
6
f = 1 MHz; Tamb = 25 °C
Collector capacitance as a function of
collector-base voltage; typical values
Fig 8.
Emitter capacitance as a function of
emitter-base voltage; typical values
BCM61B_2
Product data sheet
2
VEB (V)
f = 1 MHz; Tamb = 25 °C
Fig 7.
102
10
IC (mA)
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 28 August 2009
7 of 13
BCM61B
NXP Semiconductors
NPN/NPN matched double transistor
006aaa830
1.5
IC1/IE2
(1)
1.3
(2)
1.1
(3)
0.9
10−1
1
102
10
IE2 (mA)
(1) VCE1 = 5 V
(2) VCE1 = 3 V
(3) VCE1 = 1 V
Fig 9.
Current matching as a function of emitter current 2; typical values
8. Test information
A
IC1
VCE1
2
TR1
1
TR2
3
IE2 =
constant
4
006aaa831
Fig 10. Test circuit current matching
BCM61B_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 28 August 2009
8 of 13
BCM61B
NXP Semiconductors
NPN/NPN matched double transistor
9. Package outline
3.0
2.8
1.1
0.9
1.9
4
2.5
2.1
3
0.45
0.15
1.4
1.2
1
2
0.88
0.78
0.48
0.38
0.15
0.09
1.7
Dimensions in mm
04-11-16
Fig 11. Package outline SOT143B
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package
BCM61B
[1]
Description
SOT143B 4 mm pitch, 8 mm tape and reel
3000
10000
-215
-235
For further information and the availability of packing methods, see Section 14.
BCM61B_2
Product data sheet
Packing quantity
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 28 August 2009
9 of 13
BCM61B
NXP Semiconductors
NPN/NPN matched double transistor
11. Soldering
3.25
0.60 (3x)
0.50 (3x)
solder lands
0.60
(4x)
solder resist
4
3
2.70
occupied area
1.30 3.00
1
2
solder paste
msa441
0.90
1.00
2.50
Dimensions in mm
Fig 12. Reflow soldering footprint SOT143B
4.45
1.20 (3×)
4
3
1.15 4.00 4.60
solder lands
1
solder resist
2
occupied area
Dimensions in mm
1.00
3.40
preferred transport direction during soldering
msa422
Dimensions in mm
Fig 13. Wave soldering footprint SOT143B
BCM61B_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 28 August 2009
10 of 13
BCM61B
NXP Semiconductors
NPN/NPN matched double transistor
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BCM61B_2
20090828
Product data sheet
-
BCM61B_1
Modifications:
BCM61B_1
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•
Figure 13 “Wave soldering footprint SOT143B”: updated
20060919
Product data sheet
BCM61B_2
Product data sheet
-
-
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 28 August 2009
11 of 13
BCM61B
NXP Semiconductors
NPN/NPN matched double transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BCM61B_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 28 August 2009
12 of 13
BCM61B
NXP Semiconductors
NPN/NPN matched double transistor
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing information. . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 28 August 2009
Document identifier: BCM61B_2
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