CMOS linear image sensor S10227-10 Small, resin-sealed CMOS image sensor The S10227-10 is a resin-sealed CMOS linear image sensor to offer compact size and high cost-performance compared to our previous product (S9227 series). Features Applications Compact and high cost-performance Surface mount type package: 4.4 × 9.1 × 1.6t mm Barcode readers Pixel pitch: 12.5 μm Pixel height: 250 μm Refractometers Displacement meters Interferometers 512 pixels Miniature spectrometers Single 5 V power supply operation Video data rate: 5 MHz max. Simultaneous charge integration Shutter function High sensitivity, low dark current, low noise Built-in timing generator allows operation with only Start and Clock pulse inputs. Spectral response range: 400 to 1000 nm Structure Parameter Number of pixels Pixel pitch Pixel height Photosensitive area length Package Seal material Specification 512 12.5 250 6.4 Glass epoxy Silicone resin Unit μm μm mm - Absolute maximum ratings Parameter Supply voltage Clock pulse voltage Start pulse voltage Operating temperature*1 Storage temperature*1 Reflow soldering conditions*2 Symbol Vdd V(CLK) V(ST) Topr Tstg Tsol Condition Ta=25 °C Ta=25 °C Ta=25 °C Value -0.3 to +6 -0.3 to +6 -0.3 to +6 -25 to +85 -25 to +85 Peak temperature 260°C, 3 times (See P.6) Unit V V V °C °C - *1: No dew condensation When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. *2: JEDEC level 2a Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. www.hamamatsu.com 1 CMOS linear image sensor S10227-10 Recommended terminal voltage Parameter Supply voltage Symbol Vdd High level Low level High level Low level Clock pulse voltage Start pulse voltage V(CLK) V(ST) Min. 4.75 Vdd - 0.25 Vdd - 0.25 - Typ. 5 Vdd 0 Vdd 0 Max. 5.25 Vdd + 0.25 Vdd + 0.25 - Unit V V V V V Max. 5M 32 - Unit Hz Hz mA μV/e- Electrical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V] Parameter Clock pulse frequency Video data rate Current consumption Conversion efficiency Symbol f(CLK) VR I CE Min. 50 k 20 - Typ. f(CLK) 26 1.6 Electrical and optical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V, f(CLK)=5 MHz] Parameter Spectral response range Peak sensitivity wavelength Dark output voltage*3 Saturation output voltage*4 Readout noise Output offset voltage Photoresponse nonuniformity*5 *6 Symbol λ λp Vd Vsat Nr Vo PRNU Min. Typ. 400 to 1000 700 1 4.3 0.45 0.6 - 4 0.4 - Max. 10 1 0.9 ±8.5 Unit nm nm mV V mV rms V % *3: Integration time=10 ms *4: Voltage difference from Vo *5: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly illuminated by light which is 50% of the saturation exposure level. PRNU is measured using 510 pixels excluding the pixels at both ends, and is defined as follows: PRNU= ∆X/X × 100 (%) X: average output of 510 pixels excluding the pixels at both ends, ∆X: difference between X and maximum or minimum output *6: Measured with a tungsten lamp of 2856 K Spectral response (typical example) Block diagram (Ta=25 °C) 100 ST 7 GND 1 Vdd 4 Timing generator 80 Relative sensitivity (%) CLK 8 6 EOS Shift register 5 Video Hold circuit 60 Charge amp array 1 40 2 3 4 Photodiode array 511 512 KMPDB0167EC 20 0 400 500 600 700 800 900 Wavelength (nm) 1000 1100 1200 KMPDB0258ED 2 CMOS linear image sensor S10227-10 Timing chart chart (S9227-03) Trigger 1/f(CLK) 1 2 3 4 5 6 7 8 9 101112 131415 CLK Integration time 2.5 clocks 8.5 clocks ST tlp(ST) thp(ST) tpi(ST) 100 ns 14 clocks 512 Video EOS tf(CLK) tr(CLK) CLK CLK 1/f(CLK) ST Video tr(ST) tvd1 tf(ST) thp(ST) tvd2 tlp(ST) tpi(ST) KMPDC0166E KMPDC0166EF Parameter Start pulse interval Start pulse high period Start pulse low period Start pulse rise and fall times Clock pulse duty Clock pulse rise and fall times Video delay time 1 Video delay time 2 Symbol tpi(ST) thp(ST) tlp(ST) tr(ST), tf(ST) tr(CLK), tf(CLK) tvd1 tvd2 Min. 530/f(CLK) 8/f(CLK) 15/f(CLK) 0 45 0 32 40 Typ. 20 50 20 40 50 Max. 1100 m 1000 m 100 m 30 55 30 48 60 Unit s s s ns % ns ns ns Note: Dark output increases if the start pulse period or the start pulse high period is lengthened. The internal timing circuit starts operating at the rise of CLK pulse immediately after ST pulse sets to low. The integration time equals the high period of ST pulse plus 6 CLK cycles. The output from 1st channel appears 14 clocks plus 100 ns after the falling edge of ST pulse. The EOS pulse is output 39 ns after the falling edge of CLK pulse. The output voltage after reading the last pixel (512 ch) is indefinite. Start pulse setting example (for setting the start pulse period to a minimum and the integration time to a maximum) Start pulse high period=515/f(CLK), Start pulse low period=15/f(CLK) 3 CMOS linear image sensor S10227-10 Dimensional outline (unit: mm) 9.1 3.2 Photosensitive area (6.4 × 0.25) 4.4 1.35 ± 0.2 Photosensitive surface Silicone resin Top 0.3 ± 0.15 512 ch 1 ch 1.6 ± 0.2 1.437 ± 0.2 [Top view] Bottom Glass epoxy 2.54 2.54 2.54 2.54 [Bottom view] Electrode (8 ×) ϕ0.5 (0.9) [Side view] Index mark Tolerance unless otherwise noted: ±0.1 Values in parentheses indicate reference value. KMPDA0316EB Pin connections Pin no. 1 2 3 4 5 6 7 8 Symbol GND NC NC Vdd Video EOS ST CLK I/O I O O I I Discription Ground No connection No connection Power supply voltage Video signal output End of scan Start pulse Clock pulse 4 CMOS linear image sensor S10227-10 Recommended land pattern (unit: mm) 2.54 (8 ×) ɸ0.7 2.54 2.54 2.54 KMPDC0257EA Appearance inspection standards Parameter Foreign matter on photosensitive area Test criterion 10 μm max. Inspection method Automated camera Standard packing specifications Reel (conforms to JEITA ET-7200) Dimensions 330 mm Hub diameter 100 mm Tape width 16 mm Material PPE Electrostatic characteristic Conductive Embossed tape (unit: mm, material: polycarbonate resin, conductive) 1.75 ± 0.1 4.0 ± 0.1 9.45 ± 0.1 0.32 ± 0.05 +0.3 7.5 ± 0.1 2.0 ± 0.05 16.0-0.1 +0.1 ɸ1.5-0 +0.25 ϕ1.5-0 8.0 ± 0.1 1 ch 1.89 ± 0.1 Reel feed direction 4.75 ± 0.1 KMPDC0450EA Packing quantity 2000 pcs/reel Packing type Reel and desiccant in moisture-proof packing (vaccum-sealed) 5 CMOS linear image sensor S10227-10 Recommended temperature profile for reflow soldering (typical example) 300 °C Peak temperature 260 °C max. Peak temperature - 5 °C 30 s max. Cooling 6 °C/s max. Heating 3 °C/s max. Temperature 217 °C 200 °C 150 °C Preheating 60 to 120 s Soldering 60 to 150 s Time KMPDB0405EB ∙ This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a humidity of 60% or less, and perform soldering within 4 weeks. ∙ The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used. Before actual reflow soldering, check for any problems by tesitng out the reflow soldering methods in advance. ∙ When three or more months have passed or if the packing bag has not been stored in an environment described above, perform baking. For the baking method, see the related information “Resin sealed type CMOS linear image sensor / Precautions.” Precautions (1) Electrostatic countermeasures · This device has a built-in protection circuit as a safeguard against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools. · Protect this device from surge voltages which might be caused by peripheral equipment. (2) Package handling · The photosensitive area of this device is sealed and protected by transparent resin. When compared to a glass faceplate, the surface of transparent resin may be less uniform and is more likely to be scratched. Be very careful when handling this device and also when designing the optical systems. · Dust or grime on the light input window might cause nonuniform sensitivity. To remove dust or grime, blow it off with compressed air. (3) Surface protective tape · Protective tape is affixed to the surface of this product to protect the photosensitive area. After assembling the product, remove the tape before use. (4) Operating and storage environments · Handle the device within the temperature range specified in the absolute maximum ratings. Operating or storing the device at an excessively high temperature and humidity may cause variations in performance characteristics and must be avoided. (5) UV exposure · This product is not designed to prevent deterioration of characteristics caused by UV exposure, so do not expose it to UV light. 6 CMOS linear image sensor S10227-10 Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Image sensors ∙ Resin-sealed CMOS linear image sensors Information described in this material is current as of June 2016. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1152E04 Jun. 2016 DN 7