CCD linear image sensor S12379 Pixel size: 8 × 8 μm, 4-port readout, front-illuminated CCD with high-speed response and high sensitivity The S12379 is a high-speed line rate, front-illuminated CCD linear image sensor designed for machine vision cameras. Features Application Pixel size: 8 × 8 μm Machine vision 2048 pixels High-speed image readout High-speed multiport readout (Readout speed: 40 MHz max. × 4 ports) High CCD node sensitivity: 21 μV/e- typ. Anti-blooming function Structure Parameter Image size (H × V) Pixel size (H × V) Total number of pixels Number of effective pixels Fill factor Horizontal clock Output circuit Package Window material Specification 16.384 × 0.008 8×8 2104 2048 100 2-phase 3-stage MOSFET source follower 24-pin ceramic DIP Quartz glass*1 Unit mm μm % - *1: Resin sealing Absolute maximum ratings (Ta=25 °C, unless otherwise noted) Parameter Operating temperature Storage temperature Output transistor drain voltage Reset drain voltage Anti-blooming drain voltage Anti-blooming gate voltage Storage gate voltage Transfer gate voltage Reset gate voltage Output gate voltage Horizontal shift register clock voltage Symbol Topr Tstg VOD1, 2, 3, 4 VRD VABD VABG VSTG VTG VRG12, VRG34 VOG VP1H, VP2H Condition Package temperature, no condensation No condensation Value Unit -50 to +70 °C -50 to +70 -0.5 to +20 -0.5 to +18 -0.5 to +18 -0.5 to +15 -0.5 to +15 -0.5 to +15 -0.5 to +15 -0.5 to +15 -0.5 to +15 °C V V V V V V V V V Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. The sensor temperature will increase during high-speed operation. Take heat dissipation measures as required to prevent exceeding the absolute maximum ratings. www.hamamatsu.com 1 CCD linear image sensor S12379 Operating conditions (Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Anti-blooming drain voltage Anti-blooming gate voltage Storage gate voltage Transfer gate voltage Reset gate voltage Horizontal shift register clock voltage High Low High Low High Low Output gate voltage Substrate voltage External load resistance Symbol VOD1, 2, 3, 4 VRD VABD VABG VSTG VTGH VTGL VRG12H, VRG34H VRG12L, VRG34L VP1HH, VP2HH VP1HL, VP2HL VOG VSS RL Min. 13 12 12 0 0 8 0 7 0 5.5 0 6 2.0 Typ. 15 13 13 0 0 10 0 8 0 6 0 7 0 2.2 Max. 17 14 14 5 5 12 3 9 1 6.5 1 8 2.4 Unit V V V V V V V V V V kΩ Electrical characteristics (Ta=25 °C, operating conditions: Typ., unless otherwise noted) Parameter Output signal frequency/port Line rate Reset clock frequency Horizontal shift register capacitance Transfer gate capacitance Reset gate capacitance Charge transfer efficiency*2 DC output level*3 Output impedance*3 Power consumption/port*3 *4 Symbol fc LR frg CP1H, CP2H CTG CRG12, CRG34 CTE Vout Zo P Min. 0.99995 8 - Typ. 20 36 20 180 110 20 0.99999 9 135 100 Max. 40 72 40 10 200 140 Unit MHz kHz MHz pF pF pF V Ω mW *2: Transfer efficiency per CCD shift register pixel measured at half the saturation output *3: Varies depending on the load resistance (VOD=15 V, load resistance=2.2 kΩ) *4: Power consumption of the on-chip amp and load resistance Electrical and optical characteristics (Ta=25 °C, operating conditions: Typ., unless otherwise noted) Parameter Saturation output voltage Saturation charge*5 CCD node sensitivity Average of all effective pixels 6 Dark current* Maximum among all effective pixels Readout noise*7 Dynamic range*8 Spectral response range Photoresponse nonuniformity*9 *10 Image lag*9 *11 Symbol Vsat Fw Sv Min. 15 19 Typ. Fw × Sv 20 21 Max. 23 DSave - 30 100 Unit V keμV/ee-/ms DSmax - 40 100 Nr DR λ PRNU L 600 - 20 1000 200 to 1000 ±3 0.1 30 ±10 1 e- rms nm % % Saturation charge is within linearity ± 2%. Dark current is halved when cooled by 5 to 7 °C. Readout frequency 40 MHz Dynamic range = saturation charge/readout noise Measured at half the saturation output using an LED light (peak emission wavelength: 470 nm) Fixed pattern noise (peak to peak) *10: Photoresponse nonuniformity = × 100 [%] Signal *5: *6: *7: *8: *9: *11: Percentage of unread signal level when a light pulse is directed so that the output is half the saturation output 2 CCD linear image sensor S12379 Spectral response (without window) Spectral transmittance of window material 40 60 30 40 20 Photosensitivity 20 10 80 Transmittance (%) Quantum efficiency (%) Quantum efficiency 80 (Typ. Ta=25 °C) 100 50 Photosensitivity [V/(µJ ∙ cm2)] (Typ. Ta=25 °C) 100 60 40 20 0 200 0 0 200 300 400 500 600 700 800 900 1000 1100 300 400 500 600 700 800 900 1000 Wavelength (nm) Wavelength (nm) KMPDB0303EA * Spectral response will degrade depending on the transmittance of the quartz glass. KMPDB0414EB Device structure (schematic of CCD chip as viewed from top of dimensional outline) P2H P1H SS OS3 SS OS2 OD2 OD3 D1 D2 D3 D4 D4 D3 D2 D1 TG D5 D6 ABD RG12 D13 D14 S1 S2 S511 S512 S512 S511 S2 S1 D14 D12 D6 D5 S512 S512 S511 S1 D14 D13 D5 STG RG34 Photodiode D5 D6 ABG D14 S1 S2 D1 D2 D3 D4 D4 D3 D2 D1 OD1 OD4 OS1 SS OS4 SS P2H P1H RD OG : light shielding region KMPDC0504EB 3 CCD linear image sensor S12379 Timing chart Output period of one line (integration time) Tovr3 Tovr1 Tovr2 Tpwt Tpft Tprt TG P1H P2H RG12, RG34 OS Detail TG 1 Tpwh 2 3 4 5...522 523 524 525 526 P1H Tprh Tpfh P2H Tprr Tpwr Tpfr RG12, RG34 OS D1 D2 D3 D4 S509 S510 S511 S512 D5...D14, S1...S508 KMPDC0505EB TG P1H, P2H *12 RG12, RG34 TG-P1H Parameter Pulse width Rise and fall times Pulse width Rise and fall times Duty ratio Pulse width Rise and fall times Overlap time Symbol Tpwt Tprt, Tpft Tpwh Tprh, Tpfh Tpwr Tprr, Tpfr Tovr1 Tovr2 Tovr3 Min. 400 10 12.5 6 40 5 2 100 100 100 Typ. 600 25 50 6 200 200 200 Max. 60 - Unit ns ns ns ns % ns ns ns ns ns *12: Symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude. 4 CCD linear image sensor S12379 Dimensional outline (unit: mm) 2 ± 0.15 1 12 A’ Photosensitive surface 0.6 ± 0.05*3 3.45 ± 0.35 0.46 ± 0.05 27.94 ± 0.3 3.035 ± 0.3 2.54 ± 0.13 1.27 ± 0.25 18 ± 0.3 Index mark 4 ± 0.5 12.45 ± 0.25 13 6.225 ± 0.2 24 1.85 ± 0.2*2 12.7 ± 0.25 A 0.25 -0.03 1.2 ± 0.2*1 Photosensitive area 16.384 × 0.008 +0.05 [A-A’ cross section] 36 ± 0.36 Lead material: FeNi alloy Lead processing: Ni/Au plating Tolerance unless otherwise noted: ±0.1 *1: Distance from package top to photosensitive area *2: Distance from package bottom to photosensitive area *3: Glass thickness Note: This product is not hermetically sealed, and therefore moisture may permeate into the package. Storing or using the product in a place with sudden temperature or humidity changes may cause condensation to form inside the package, so avoid such locations. KMPDA0319EA Pin connections Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Symbol SS OS1 OD1 RD ABG P2H P1H RG12 OG OD4 OS4 SS SS OS3 OD3 STG RG34 P1H P2H TG ABD OD2 OS2 SS Function Substrate Output transistor source 1 Output transistor drain 1 Reset drain Anti-blooming gate Horizontal shift register clock 2 Horizontal shift register clock 1 Reset gate 1, 2 Output gate Output transistor drain 4 Output transistor source 4 Substrate Substrate Output transistor source 3 Output transistor drain 3 Storage gate Reset gate 3, 4 Horizontal shift register clock 1 Horizontal shift register clock 2 Transfer gate Anti-blooming drain Output transistor drain Output transistor source 2 Substrate Remark (standard operation) 0V RL=2.2 kΩ (OS1-SS) +15 V +13 V 0V +6/0 V +6/0 V +8/0 V +7 V +15 V RL=2.2 kΩ (OS4-SS) 0V 0V RL=2.2 kΩ (OS3-SS) +15 V 0V +8/0 V +6/0 V +6/0 V +10/0 V +13 V +15 V RL=2.2 kΩ (OS2-SS) 0V 5 CCD linear image sensor S12379 Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions · Disclaimer · Image sensors Information described in this material is current as of February 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1149E01 Feb. 2015 DN 6