CCD image sensors S11071/S10420-01 series Improved etaloning characteristics, High-speed type and low noise type available The S11071/S10420-01 series are back-thinned CCD image sensors designed for spectrometers. Two types consisting of a high-speed type (S11071 series) and low noise type (S10420-01 series) are available with improved etaloning characteristics. The S11071/S10420-01 series offer nearly flat spectral response characteristics with high quantum efficiency from the UV to near infrared region. Features Applications Improved etaloning characteristics Spectrometers, etc. High sensitivity over a wide spectral range and nearly flat spectral response characteristics High CCD node sensitivity: 8 μV/e- (S11071 series) 6.5 μV/e- (S10420-01 series) High full well capacity and wide dynamic range (with anti-blooming function) Pixel size: 14 × 14 μm Selection guide Type no. S11071-1004 S11071-1006 S11071-1104 S11071-1106 S10420-1004-01 S10420-1006-01 S10420-1104-01 S10420-1106-01 Number of total pixels 1044 1044 2068 2068 1044 1044 2068 2068 × × × × × × × × Number of effective pixels 22 70 22 70 22 70 22 70 1024 1024 2048 2048 1024 1024 2048 2048 × × × × × × × × 16 64 16 64 16 64 16 64 Image size [mm (H) × mm (V)] 14.336 14.336 28.672 28.672 14.336 14.336 28.672 28.672 × × × × × × × × 0.224 0.896 0.224 0.896 0.224 0.896 0.224 0.896 Readout speed max. (MHz) Suitable driver circuit 10 C11288 0.5 C11287 Improved etaloning characteristics Etaloning characteristics (typical example) (Ta=25 °C) 110 100 Etaloning-improved type 90 Relative sensitivity (%) Etaloning is an interference phenomenon that occurs when the light incident on a CCD repeatedly reflects between the front and back surfaces of the CCD while being attenuated, and causes alternately high and low sensitivity. When long-wavelength light enters a backthinned CCD, etaloning occurs due to the relationship between the silicon substrate thickness and the absorption length. The S11071/ S10420-01 series back-thinned CCDs have achieved a significant improvement in etaloning by using a unique structure that is unlikely to cause interference. 80 70 60 Previous type 50 40 30 20 10 0 900 910 920 930 940 950 960 970 980 990 1000 Wavelength (nm) KMPDB0284EB www.hamamatsu.com 1 CCD image sensors S11071/S10420-01 series Structure Parameter Pixel size (H × V) Vertical clock phase Horizontal clock phase Output circuit Package Window material*1 Cooling S11071 series S10420-01 series 14 × 14 μm 2-phase 4-phase Two-stage MOSFET source follower One-stage MOSFET source follower 24-pin ceramic DIP (refer to dimensional outline) Quartz glass*2 Non-cooled *1: Temporary window type (ex: S11071-1106N, S10420-1106N-01) is available upon request. *2: Resin sealing Absolute maximum ratings (Ta=25 °C) Parameter Operating temperature*3 Storage temperature S11071 series Output transistor drain voltage S10420-01 series Reset drain voltage Output amplifier return voltage Overflow drain voltage Vertical input source voltage Horizontal input source voltage Overflow gate voltage Vertical input gate voltage Horizontal input gate voltage Summing gate voltage Output gate voltage Reset gate voltage Transfer gate voltage Vertical shift register clock voltage Horizontal shift register clock voltage Symbol Topr Tstg VOD VRD Vret VOFD VISV VISH VOFG VIG1V, VIG2V VIG1H, VIG2H VSG VOG VRG VTG VP1V, VP2V VP1H, VP2H VP3H, VP4H Min. -50 -50 -0.5 -0.5 -0.5 -0.5 -0.5 -0.5 -0.5 -10 -10 -10 -10 -10 -10 -10 -10 Typ. - Max. +50 +70 +25 +30 +18 +18 +18 +18 +18 +15 +15 +15 +15 +15 +15 +15 +15 Unit °C °C -10 - +15 V V V V V V V V V V V V V V V *3: Package temperature Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Operating conditions (MPP mode, Ta=25 °C) Parameter Symbol Output transistor drain voltage Reset drain voltage Overflow drain voltage Overflow gate voltage Output gate voltage Substrate voltage Output amplifier return voltage*4 Input source Test point Vertical input gate Horizontal input gate Vertical shift register clock voltage High Low High Horizontal shift register clock voltage Low Summing gate voltage Reset gate voltage Transfer gate voltage High Low High Low High Low External load resistance *4: Output amplifier return voltage is a positive out of the sensor. S11071 series Min. Typ. Max. 12 15 18 14 15 16 11 12 13 0 13 14 4 5 6 0 1 2 VRD -9 -8 -9 -8 4 6 8 -9 -8 -7 S10420-01 series Min. Typ. Max. 23 24 25 11 12 13 11 12 13 0 12 13 4 5 6 0 - VOD VRD VOFD VOFG VOG VSS Vret VISV, VISH VRD VIG1V, VIG2V -9 -8 VIG1H, VIG2H -9 -8 VP1VH, VP2VH 4 6 VP1VL, VP2VL -9 -8 VP1HH, VP2HH 4 6 8 4 6 VP3HH, VP4HH VP1HL, VP2HL -6 -5 -4 -6 -5 VP3HL, VP4HL VSGH 4 6 8 4 6 VSGL -6 -5 -4 -6 -5 VRGH 4 6 8 4 6 VRGL -6 -5 -4 -6 -5 VTGH 4 6 8 4 6 VTGL -9 -8 -7 -9 -8 2.0 2.2 2.4 90 100 RL voltage with respect to Substrate voltage, but the current flows in 8 -7 Unit V V V V V V V V V V V 8 V -4 8 -4 8 -4 8 -7 110 V V V kΩ the direction of flow 2 CCD image sensors S11071/S10420-01 series Electrical characteristics (Ta=25 °C) Parameter Symbol Signal output frequency*5 Vertical shift register capacitance Horizontal shift register capacitance Summing gate capacitance Reset gate capacitance Transfer gate capacitance fc -1004(-01) -1006(-01) -1104(-01) -1106(-01) -1004(-01)/-1006(-01) -1104(-01)/-1106(-01) -1004(-01)/-1006(-01) -1104(-01)/-1106(-01) Charge transfer efficiency*6 DC output level*5 Output impedance*5 Power consumption*5 *7 CP1V, CP2V CP1H, CP2H CP3H, CP4H CSG CRG CTG CTE Vout Zo P S11071 series Min. Typ. Max. 5 10 200 600 400 1200 80 160 10 10 30 60 0.99995 0.99999 7 8 9 0.3 75 - S10420-01 series Min. Typ. Max. 0.25 0.5 200 600 400 1200 80 160 10 10 30 60 0.99995 0.99999 17 18 19 10 4 - Unit MHz pF pF pF pF pF V kΩ mW *5: The values depend on the load resistance. (S11071 series: VOD=15 V, RL=2.2 kΩ, S10420-01 series: VOD=24 V, RL=100 kΩ) *6: Charge transfer efficiency per pixel, measured at half of the full well capacity *7: Power consumption of the on-chip amplifier plus load resistance Electrical and optical characteristics (Ta=25 °C, unless otherwise noted) Parameter Symbol Saturation output voltage Full well capacity CCD node sensitivity*8 Dark current*9 Readout noise*10 Dynamic range*11 Sv DS Nr DR Min. 50 150 7 6520 λ - PRNU - Vsat Vertical Horizontal Fw Line binning Spectral response range Photoresponse nonuniformity* 12 S11071 series Typ. Max. Fw × Sv 60 200 8 9 50 500 23 28 8700 200 to 1100 ±3 ±10 S10420-01 series Min. Typ. Max. Fw × Sv 50 60 250 300 5.5 6.5 7.5 50 500 6 15 41700 50000 200 to 1100 ±3 ±10 Unit V keμV/ee-/pixel/s e- rms nm % *8: The values depend on the load resistance. (S11071 series: VOD=15 V, RL=2.2 kΩ, S10420-01 series: VOD=24 V, RL=100 kΩ) *9: Dark current is reduced to half for every 5 to 7 °C decrease in temperature. *10: S11071 series (temperature: 25 °C): fc=2 MHz, S10420-01 series (temperature: -40 °C): fc=20 kHz *11: Dynamic range = Full well capacity / Readout noise *12: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 660 nm) Photoresponse nonuniformity = Fixed pattern noise (peak to peak) Signal × 100 [%] 3 CCD image sensors S11071/S10420-01 series Spectral transmittance characteristic of window material Spectral response (without window)*13 (Typ. Ta=25 °C) 100 80 80 Transmittance (%) Quantum efficiency (%) (Typ. Ta=25 °C) 100 60 40 20 60 40 20 0 200 400 600 800 1000 1200 Wavelength (nm) 0 100 200 300 400 500 600 700 800 900 1000 1100 Wavelength (nm) KMPDB0316EA KMPDB0303EA *13: Spectral response with quartz glass is decreased according to the spectral transmittance characteristic of window material. Dark current vs. temperature (Typ.) Dark current (e-/pixel/s) 100 10 1 0.1 0.01 -50 -40 -30 -20 -10 0 10 20 30 Temperature (°C) KMPDB0304EA 4 CCD image sensors S11071/S10420-01 series Device structure (conceptual drawing of top view in dimensional outline) S11071 series Effective pixels Thinning Effective pixels 22 21 20 19 18 17 16 2-bevel 23 15 Horizontal shift register 5 4 3 2 1 2 3 4 5 n 14 1024 13 V=16, 64 H=1024, 2048 4-bevel 24 1 2 3 4 5 6 7 8 9 10 2n signal output 4 blank pixels Horizontal shift register 2 signal output Thinning 64 11 12 4 blank pixels 6-bevel 6-bevel Note: When viewed from the direction of the incident light, the horizontal shift register is covered with a thick silicon layer (dead layer). However, long-wavelength light passes through the silicon dead layer and may possibly be detected by the horizontal shift register. To prevent this, provide light shield on that area as needed. KMPDC0343EB S10420-01 series Effective pixels Thinning Effective pixels 22 21 20 19 18 17 16 2-bevel 23 2 signal output 15 Horizontal shift register 5 4 3 2 1 2 3 4 5 14 1024 13 4-bevel 24 n Thinning 64 1 V=16, 64 H=1024, 2048 2 3 4 blank pixels Horizontal shift register 6-bevel 4 5 6 n 7 8 2 signal output 9 10 11 12 4 blank pixels 6-bevel Note: When viewed from the direction of the incident light, the horizontal shift register is covered with a thick silicon layer (dead layer). However, long-wavelength light passes through the silicon dead layer and may possibly be detected by the horizontal shift register. To prevent this, provide light shield on that area as needed. KMPDC0269EC 5 CCD image sensors S11071/S10420-01 series Timing chart (line binning) Integration time (shutter has to be open) Vertical binning period Readout period (shutter has to be closed) (shutter has to be closed) 3...21 22←16 + 6 (bevel): S11071/S10420-1004, -1104 Tpwv 3...69 70←64 + 6 (bevel): S11071/S10420-1006, -1106 1 2 P1V Tovr P2V, TG Tpwh, Tpws Tovrh 1 P1H 2 3 4...1043 1044: S11071/S10420-1004, -1006 4...2067 2068: S11071/S10420-1104, -1106 P2H P3H P4H, SG Tpwr RG OS D1 D2 D19 D20 D3...D10, S1...S1024, D11...D18: S11071/S10420-1004, -1006 S1...S2048 : S11071/S10420-1104, -1106 KMPDC0270ED Parameter P1V, P2V, TG P1H, P2H, P3H, P4H SG RG TG-P1H Symbol 14 Pulse width* Rise and fall times*14 Pulse width*14 Rise and fall times*14 Pulse overlap time Duty ratio*14 Pulse width*14 Rise and fall times*14 Pulse overlap time Duty ratio*14 Pulse width Rise and fall times Overlap time Tpwv Tprv, Tpfv Tpwh Tprh, Tpfh Tovrh Tpws Tprs, Tpfs Tovrh Tpwr Tprr, Tpfr Tovr Min. 1 20 50 10 25 40 50 10 25 40 5 5 1 S11071 series Typ. Max. 8 100 50 50 60 100 50 50 60 50 2 - S10420-01 series Min. Typ. Max. 6 8 20 1000 2000 10 500 1000 40 50 60 1000 2000 10 500 1000 40 50 60 100 1000 5 1 2 - Unit μs ns ns ns ns % ns ns ns % ns ns μs *14: Symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude. 6 CCD image sensors S11071/S10420-01 series Dimensional outline (unit: mm) 3.3 ± 0.35 A B +0.05 12 0.25-0.03 1 Index mark 27.94 ± 0.3 0.46 ± 0.05 1.27 ± 0.2 Photosensitive surface 2.54 ± 0.13 1.47 ± 0.18 3.0 ± 0.5 1.27 ± 0.25 38.10 ± 0.4 Index mark 10.41 ± 0.25 13 10.03 ± 0.3 24 Type no. Photosensitive area A B -1004(-01) 14.336 (H) 0.224 (V) S11071/ -1006(-01) S10420 -1104(-01) 14.336 (H) 0.896 (V) 28.672 (H) 0.224 (V) -1106(-01) 28.672 (H) 0.896 (V) KMPDA0223EE 7 CCD image sensors S11071/S10420-01 series Pin connections S11071 series Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Symbol OS OD OG SG Vret RD P4H P3H P2H P1H IG2H IG1H OFG OFD ISH ISV SS RD IG2V IG1V P2V P1V TG RG Function Output transistor source Output transistor drain Output gate Summing gate Output amplifier return Reset drain CCD horizontal register clock-4 CCD horizontal register clock-3 CCD horizontal register clock-2 CCD horizontal register clock-1 Test point (horizontal input gate-2) Test point (horizontal input gate-1) Over flow gate Over flow drain Test point (horizontal input source) Test point (vertical input source) Substrate Reset drain Test point (vertical input gate-2) Test point (vertical input gate-1) CCD vertical register clock-2 CCD vertical register clock-1 Transfer gate Reset gate Remark (standard operation) RL=2.2 kΩ +15 V +5 V Same pulse as P4H +1 V +15 V -8 V -8 V +13 V +12 V Connect to RD Connect to RD GND +15 V -8 V -8 V Same pulse as P2V S10420-01 series Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Symbol OS OD OG SG SS RD P4H P3H P2H P1H IG2H IG1H OFG OFD ISH ISV SS RD IG2V IG1V P2V P1V TG RG Function Output transistor source Output transistor drain Output gate Summing gate Substrate Reset drain CCD horizontal register clock-4 CCD horizontal register clock-3 CCD horizontal register clock-2 CCD horizontal register clock-1 Test point (horizontal input gate-2) Test point (horizontal input gate-1) Over flow gate Over flow drain Test point (horizontal input source) Test point (vertical input source) Substrate Reset drain Test point (vertical input gate-2) Test point (vertical input gate-1) CCD vertical register clock-2 CCD vertical register clock-1 Transfer gate Reset gate Remark (standard operation) RL=100 kΩ +24 V +5 V Same pulse as P4H GND +12 V -8 V -8 V +12 V +12 V Connect to RD Connect to RD GND +12 V -8 V -8 V Same pulse as P2V 8 CCD image sensors S11071/S10420-01 series Precautions (electrostatic countermeasures) ・ Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. ・ Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. ・Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. ・ Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Image sensors/Precautions Technical information ∙ FFT-CCD area image sensor/Technical information Driver circuits for CCD image sensor (S10420-01/S11071 series) C11287/C11288 [sold separately] The C11287, C11288 are driver circuits designed for HAMAMATSU CCD image sensors S10420-01/S11071 series. The C11287, C11288 can be used in spectrometers, etc. when combined with the CCD image sensor. Features Built-in 14-bit A/D converter Interface to computer: USB 2.0 Power supply: USB bus power operation (C11287) DC+5 V operation (C11288) C11287 C11288 9 CCD image sensors S11071/S10420-01 series Information described in this material is current as of February, 2014. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1120E08 Feb. 2014 DN 10